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21. 发明专利

JP2011154216A Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same 有权
标题翻译：化学敏感性或辐射敏感性树脂组合物和使用其的图案形成方法
公开(公告)号：JP2011154216A
公开(公告)日：2011-08-11
申请号：JP2010016034
申请日：2010-01-27
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAHASHI HIDETOMO , HIRANO SHUJI , TSUBAKI HIDEAKI
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition which satisfies high sensitivity, high resolution, a good pattern shape, good line edge roughness (LER) and good dependence on a density distribution particularly in lithography using electron beams, X-rays or EUV light as an exposure light source, and a pattern forming method using the same.
SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises a resin (P) comprising a repeating unit (A) which decomposes upon irradiation with actinic rays or radiation to thereby generate an acid and at least two kinds of repeating units (B1) and (B2) which decompose under the action of an acid to thereby generate alkali-soluble groups, wherein the repeating unit (A) is a repeating unit which decomposes upon irradiation with actinic rays or radiation to thereby generate an acid anion in a side chain of the resin, and at least an aromatic ring is contained in the side chain except the counter cation of the acid anion.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供满足高灵敏度，高分辨率，良好的图案形状，良好的线边缘粗糙度（LER）和对密度分布的良好依赖性的光化射线敏感或辐射敏感性树脂组合物，特别是在使用电子束的光刻，X射线或EUV光作为曝光光源，以及使用其的图案形成方法。光敏性或辐射敏感性树脂组合物包含含有重复单元（A）的树脂（P），该重复单元（A）在用光化射线或辐射照射时分解，从而产生酸和至少两种重复单元（B1）和（B2），其在酸的作用下分解，从而产生碱溶性基团，其中重复单元（A）是在用光化射线或辐射照射后分解从而产生酸阴离子的重复单元在树脂的侧链中，除了酸性阴离子的抗衡阳离子以外，侧链中至少含有芳香环。版权所有（C）2011，JPO＆INPIT

22. 发明专利

JP2011022595A Pattern forming method 有权
标题翻译：图案形成方法
公开(公告)号：JP2011022595A
公开(公告)日：2011-02-03
申请号：JP2010197911
申请日：2010-09-03
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TSUBAKI HIDEAKI
IPC分类号： G03F7/038 , G03F7/004 , G03F7/039 , G03F7/32 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a pattern forming method for stably forming a highly precise fine pattern that is used for a semiconductor manufacturing process, manufacture of a liquid crystal or a circuit board such as a thermal head, and other photofabrication process, or the like. SOLUTION: In the pattern forming method, a resist film with a receding contact angle against water of not less than 70 degrees is formed by applying a resist composition for negative development, which contains a resin with polarity increased by acid action, and in which the solubility to a positive type developer being an alkali developer is increased by irradiation of an active ray or radiation, and the solubility to a negative developer containing an organic solvent is decreased. Then, the resist film is exposed through an immersion medium, and developed by using the negative developer. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：为了提供用于稳定地形成用于半导体制造工艺的高精度精细图案的图案形成方法，液晶或诸如热敏头的电路板的制造以及其它光制造工艺，等等。解决方案：在图案形成方法中，通过涂覆含有通过酸作用极性增加的树脂的负显影用抗蚀剂组合物形成具有不小于70度的与水的后退接触角的抗蚀剂膜，以及其中对作为碱性显影剂的正型显影剂的溶解度通过活性射线或辐射的照射而增加，并且对含有有机溶剂的负性显影剂的溶解度降低。然后，抗蚀剂膜通过浸渍介质曝光，并通过使用负极显影剂显影。版权所有（C）2011，JPO＆INPIT

23. 发明专利

JP2010271585A Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same 审中-公开
标题翻译：化学敏感性或辐射敏感性树脂组合物和使用其的图案形成方法
公开(公告)号：JP2010271585A
公开(公告)日：2010-12-02
申请号：JP2009124353
申请日：2009-05-22
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： DOBASHI TORU , TSUBAKI HIDEAKI , SHIRAKAWA KOJI , TAKAHASHI HIDETOMO , TSUCHIMURA TOMOTAKA
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an actinic ray-sensitive or radiation-sensitive resin composition capable of forming a pattern which simultaneously satisfies high sensitivity, high resolution, satisfactory exposure latitude, good line width roughness and post-exposure delay stability (PED), and to provide a pattern forming method using the composition.
SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition comprises (A) a resin which contains a unit represented by general formula (AI) and a unit represented by general formula (AII) and exhibits increased solubility in an alkali developer under the action of an acid, and (B) a compound which generates a sulfonic acid upon irradiation with actinic rays or radiation.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成同时满足高灵敏度，高分辨率，令人满意的曝光宽容度，良好的线宽粗糙度和后曝光延迟稳定性的图案的光化射线敏感或辐射敏感性树脂组合物 PED），并提供使用该组合物的图案形成方法。光敏性或辐射敏感性树脂组合物包含（A）含有通式（AI）所示单元的树脂和由通式（AII）表示的单元，并且在碱中显示增加的溶解度显影剂在酸的作用下，和（B）在用光化射线或辐射照射时产生磺酸的化合物。版权所有（C）2011，JPO＆INPIT

24. 发明专利

JP2010237695A Pattern forming method, positive resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method 有权
标题翻译：图案形成方法，用于图案形成方法中使用的多个开发的积极抵抗性组合物，用于图案形成方法中使用的负面开发的开发者，以及用于图案形成方法中使用的负面开发的冲洗解决方案
公开(公告)号：JP2010237695A
公开(公告)日：2010-10-21
申请号：JP2010123584
申请日：2010-05-28
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TSUBAKI HIDEAKI , KANNA SHINICHI
IPC分类号： G03F7/40 , G03F7/039 , G03F7/32 , G03F7/38 , H01L21/027
CPC分类号： G03F7/2024 , G03F7/32
摘要： PROBLEM TO BE SOLVED: To provide a method of stably forming a high precision fine pattern for use in manufacturing processes of semiconductor devices like ICs, manufacturing of circuit boards of liquid crystal, thermal heads, etc., and the other photofabrication processes, a resin composition for use in this method, a developer for use in this method, and a rinsing solution for negative development for use in this method.
SOLUTION: A pattern forming method includes: (α) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation; (β) exposing the resist film; and (δ) developing the resist film with a negative developer. A positive resist composition for multiple development for use in the method, a developer for use in the method, and a rinsing solution for negative development for use in the method are provided.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种稳定地形成用于IC等半导体装置的制造工序的高精度精细图案的方法，液晶电路板的制造，热敏头等的制造方法以及其他光制造工序，该方法中使用的树脂组合物，该方法中使用的显影剂和用于该方法的负显影用冲洗液。解决方案：图案形成方法包括：（α）用正性显影剂中的溶解度增加的正性抗蚀剂组合物涂覆基材，并且用光化学辐射或辐射照射时，在负极显影剂中的溶解度降低; （β）曝光抗蚀剂膜; 和（δ）用负显影剂显影抗蚀剂膜。本发明提供了一种用于该方法的多次显影的正性抗蚀剂组合物，该方法中使用的显影剂和用于该方法的负显影用冲洗溶液。版权所有（C）2011，JPO＆INPIT

25. 发明专利

JP2010175858A Actinic ray-sensitive or radiation-sensitive resin composition, and method for forming pattern by using the composition 有权
标题翻译：化学敏感性或辐射敏感性树脂组合物，以及使用组合物形成图案的方法
公开(公告)号：JP2010175858A
公开(公告)日：2010-08-12
申请号：JP2009018781
申请日：2009-01-29
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAHASHI HIDETOMO , TSUCHIMURA TOMOTAKA , DOBASHI TORU , YAMASHITA KATSUHIRO , NISHIKAWA NAOYUKI , TSUBAKI HIDEAKI
IPC分类号： G03F7/039 , C08F212/14 , C08F220/38 , C08F226/06 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition satisfying requirements for high sensitivity, high resolution, a good pattern profile, good line edge roughness and reduction in outgassing, in an ultrafine region, particularly, in electron beam, X-ray or EUV lithography, and to provide a method for forming a pattern by using the composition. SOLUTION: The actinic ray-sensitive or radiation-sensitive resin composition contains: a resin (P) having a repeating unit (A) that is decomposed by irradiation with actinic rays or radiation to generate an acid and a repeating unit (B) that is decomposed by an action of an acid to increase the solubility of the resin with an alkali aqueous solution; and a compound (U) that is unevenly present on a film surface when a film is formed, giving a protective film. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种满足高灵敏度，高分辨率，良好的图案轮廓，良好的线边缘粗糙度和减少除气的要求的正型抗蚀剂组合物，在超细区域，特别是在电子束，X- ray或EUV光刻法，并提供通过使用该组合物形成图案的方法。光敏射线敏感性树脂组合物含有：具有通过用光化射线照射或放射线分解以产生酸的重复单元（A）的树脂（P）和重复单元（B）），其通过酸的作用而分解，以增加树脂与碱性水溶液的溶解度; 以及当形成膜时在膜表面上不均匀地存在的化合物（U），形成保护膜。版权所有（C）2010，JPO＆INPIT

26. 发明专利

JP2009271259A Surface treating agent for resist pattern, and method of forming resist pattern using the surface treating agent 审中-公开
标题翻译：用于电阻图案的表面处理剂以及使用表面处理剂形成电阻图案的方法
公开(公告)号：JP2009271259A
公开(公告)日：2009-11-19
申请号：JP2008120627
申请日：2008-05-02
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TARUYA SHINJI , TSUBAKI HIDEAKI , SUGIMOTO NAOYA
IPC分类号： G03F7/40 , H01L21/027
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a surface treating agent for a resist pattern suitable for a freezing process, in which properties of a first resist pattern can be modified in a double patterning method such that the first resist pattern does not dissolve in a resist liquid or a developer used for forming a second resist pattern and that changes in the width, line width ratio (LWR) and height of the first pattern are suppressed even after the second resist patter is formed, and to provide a method of forming a resist pattern by using the surface treating agent. SOLUTION: The surface treating agent for a resist pattern contains a chemical species having a polymerizable group and a functional group that chemically adsorbs to a resist pattern, and a solvent. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适用于冷冻处理的抗蚀剂图案的表面处理剂，其中第一抗蚀剂图案的性质可以以双重图案化方法进行改性，使得第一抗蚀剂图案不溶解用于形成第二抗蚀剂图案的抗蚀剂液体或显影剂，即使在形成第二抗蚀剂图案之后也抑制了第一图案的宽度，线宽比（LWR）和高度的变化，并且提供了形成通过使用表面处理剂的抗蚀剂图案。解决方案：抗蚀剂图案的表面处理剂包含具有可聚合基团和化学吸附到抗蚀剂图案的官能团的化学物质和溶剂。版权所有（C）2010，JPO＆INPIT

27. 发明专利

JP2009053657A Method for pattern formation, and resist composition, developing solution, and rinsing liquid for use in method for pattern formation 有权
标题翻译：图案形成方法和耐蚀组合物，开发方案和用于形成图案的方法中的研磨液
公开(公告)号：JP2009053657A
公开(公告)日：2009-03-12
申请号：JP2008103932
申请日：2008-04-11
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TARUYA SHINJI , TSUBAKI HIDEAKI , MIZUTANI KAZUYOSHI , WADA KENJI , HOSHINO WATARU
IPC分类号： G03F7/30 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： PROBLEM TO BE SOLVED: To provide a method for pattern formation forming a pattern which has reduced line edge roughness and further has a high level of dimensional evenness, a resin composition for use in the method and a developing solution for use in the method. SOLUTION: The method for pattern formation includes the step of coating a resist composition, which contains a resin having an alicyclic hydrocarbon structure, having a degree of dispersion of ≤1.7 and causing an enhancement in polarity upon the action of an acid and causes a reduction in solubility in a negative-working developing solution upon exposure to an actinic radiation or a radiation, the step of exposure, and the step of developing the exposed composition with a negative-working developing solution. There are also provided a resist composition for use in the method, and a developing solution and a rinsing liquid for use in the method. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供形成图案的图案形成方法，其具有减少的线边缘粗糙度并且还具有高水平的尺寸均匀度，用于该方法的树脂组合物和用于该方法的显影液方法。解决方案：图案形成方法包括涂布抗蚀剂组合物的步骤，该抗蚀剂组合物含有具有脂肪族烃结构的树脂，其分散度≤1.7，并且在酸的作用下引起极性增强，导致在曝光于光化辐射或辐射，曝光步骤和用负性显影溶液显影曝光的组合物的步骤后，在负性显影液中的溶解度降低。还提供了用于该方法的抗蚀剂组合物，以及用于该方法的显影液和冲洗液。版权所有（C）2009，JPO＆INPIT

28. 发明专利

JP2009025723A Resist composition for negative development and pattern forming method using same 审中-公开
标题翻译：负面发展的阻力组成和使用相同的图案形成方法
公开(公告)号：JP2009025723A
公开(公告)日：2009-02-05
申请号：JP2007190971
申请日：2007-07-23
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TSUBAKI HIDEAKI
IPC分类号： G03F7/038 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition for negative development which ensures small line edge roughness and good pattern collapse performance and a pattern forming method using the same.
SOLUTION: The resist composition for negative development comprises (A) a resin which has at least two kinds of repeating units having different partial structures selected from specific alicyclic hydrocarbon structures and of which the polarity increases by the action of an acid to thereby increase its solubility in a positive developer and reduce its solubility in a negative developer, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent. The pattern forming method using the same is also provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于阴性显影的抗蚀剂组合物，其确保小的线边缘粗糙度和良好的图案塌陷性能，以及使用该抗蚀剂组合物的图案形成方法。解决方案：用于负显影的抗蚀剂组合物包含（A）具有至少两种具有不同部分结构的重复单元的树脂，所述重复单元选自特定的脂环族烃结构，并且其极性通过酸的作用而增加，从而增加其在阳性显影剂中的溶解度并降低其在负显影剂中的溶解度，（B）在用光化射线或辐射照射时能够产生酸的化合物，和（C）溶剂。还提供了使用该图案形成方法的图案形成方法。版权所有（C）2009，JPO＆INPIT

29. 发明专利

JP2009025707A Resist composition for negative development and pattern forming method using same 审中-公开
标题翻译：负面发展的阻力组成和使用相同的图案形成方法
公开(公告)号：JP2009025707A
公开(公告)日：2009-02-05
申请号：JP2007190808
申请日：2007-07-23
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TSUBAKI HIDEAKI
IPC分类号： G03F7/038 , G03F7/004 , G03F7/039 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition for negative development which ensures small line edge roughness and good pattern collapse performance and a pattern forming method using the same, in order to stably form a high-precision fine pattern for producing a high-integration and high-precision electronic device. SOLUTION: The resist composition for negative development includes (A1) a first resin which has an acid decomposable repeating unit having a partial structure selected from specific alicyclic hydrocarbon structures and of which the polarity increases by the action of an acid to thereby reduce its solubility in a negative developer, (A2) a second resin which has an acid decomposable repeating unit and of which the polarity increases by the action of an acid to thereby reduce its solubility in a negative developer, wherein an average content of the acid decomposable repeating unit is different from an average content of the acid decomposable repeating unit in the resin (A1), (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, and (C) a solvent. The pattern forming method using the same is also provided. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种用于负显影的抗蚀剂组合物，其确保小的线边缘粗糙度和良好的图案塌陷性能以及使用该抗蚀剂组合物的图案形成方法，以便稳定地形成用于制备高集成度和高精度的电子设备。解决方案：用于负显影的抗蚀剂组合物包括（A1）具有可酸分解重复单元的第一树脂，其具有选自特定脂环族烃结构的部分结构，并且其酸性作用使极性增加，从而降低其在负极显影剂中的溶解度，（A2）具有酸可分解重复单元的第二树脂，其极性由于酸的作用而增加，从而降低其在负显影剂中的溶解度，其中酸可分解的平均含量重复单元与树脂（A1）中的酸分解重复单元的平均含量不同，（B）能够在光化射线或辐射照射时能够产生酸的化合物和（C）溶剂。还提供了使用该图案形成方法的图案形成方法。版权所有（C）2009，JPO＆INPIT

30. 发明专利

JP2008309878A Method of forming pattern 有权
标题翻译：形成图案的方法
公开(公告)号：JP2008309878A
公开(公告)日：2008-12-25
申请号：JP2007155322
申请日：2007-06-12
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TSUBAKI HIDEAKI
IPC分类号： G03F7/32 , G03F7/004 , G03F7/039 , G03F7/11 , H01L21/027
CPC分类号： G03F7/2041 , G03F7/0392 , G03F7/11 , G03F7/325
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a pattern for stably forming an accurate fine pattern to be used in semiconductor manufacturing process such as IC or the like, manufacturing of a circuit board for a liquid crystal, thermal head or the like, and other photo fabrication processes. SOLUTION: The method of forming patterns includes steps of: (α) coating a substrate with a resist composition for negative development, wherein the resist composition contains a resin capable of increasing the polarity by action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an active ray or radiation; (β) forming a protective film by a protective film composition after forming the resist film and before exposing the resist film; (γ) exposing the resist film via an immersion medium; and (δ) performing development with a negative developer. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形成图案的方法，用于稳定地形成要用于诸如IC等的半导体制造工艺中的精确精细图案，制造用于液晶的电路板，热敏头或类似物和其他照相制造工艺。解决方案：形成图案的方法包括以下步骤：（α）用抗负色显影用抗蚀剂组合物涂覆基材，其中抗蚀剂组合物含有能够通过酸的作用增加极性的树脂并变得更易溶于阳性显影剂，并且在用活性射线或辐射照射时较少溶于阴性显影剂; （β）在形成抗蚀剂膜之后并且在曝光抗蚀剂膜之前通过保护膜组合物形成保护膜; （γ）通过浸渍介质曝光抗蚀剂膜; 和（δ）用负极显影剂进行显影。版权所有（C）2009，JPO＆INPIT

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