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21. 发明授权

US6083665A Photoresist laminate and method for patterning using the same 有权
标题翻译：光刻胶层压板和使用其的图案化方法
公开(公告)号：US6083665A
公开(公告)日：2000-07-04
申请号：US273262
申请日：1999-03-22
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F7/40
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译：提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

22. 发明授权

US6071673A Method for the formation of resist pattern 失效
标题翻译：形成抗蚀剂图案的方法
公开(公告)号：US6071673A
公开(公告)日：2000-06-06
申请号：US138073
申请日：1998-08-21
申请人： Etsuko Iguchi , Toshimasa Nakayama , Taiichiro Aoki
发明人： Etsuko Iguchi , Toshimasa Nakayama , Taiichiro Aoki
IPC分类号： G03F7/004 , C09D5/00 , G03F7/09 , G03F7/11 , H01L21/027 , G03F7/00
CPC分类号： G03F7/091 , Y10S430/151
摘要： The present invention provides a method for the formation of a pattern, which comprises applying an antireflective coating film-forming composition solution comprising (A) a compound which undergoes crosslinking reaction when irradiated with actinic rays and (B) a dye to a substrate to form a coating film thereon, entirely irradiating the coating film with actinic rays to form an antireflective coating film, applying a resist solution to the antireflective coating film, drying the coated material to form a resist layer, and then subjecting the coated material to lithographic treatment to form a resist pattern on the antireflective coating film. The method enables the formation of a resist pattern having an excellent dimensional accuracy and section shape without causing the formation of an intermixed layer between the resist composition and antireflective coating film.
摘要翻译：本发明提供了形成图案的方法，其包括施加抗反射涂膜组合物溶液，其包含（A）当用光化射线照射时经历交联反应的化合物和（B）染料至基底以形成其上涂覆膜，用光化射线全面照射涂膜以形成抗反射涂膜，将抗蚀剂溶液施加到抗反射涂膜上，干燥涂覆的材料以形成抗蚀剂层，然后将涂覆的材料进行平版印刷处理在抗反射涂膜上形成抗蚀剂图案。该方法能够形成具有优异的尺寸精度和截面形状的抗蚀剂图案，而不会在抗蚀剂组合物和抗反射涂膜之间形成混合层。

23. 发明授权

US5789136A Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US5789136A
公开(公告)日：1998-08-04
申请号：US626147
申请日：1996-04-05
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
IPC分类号： G03F7/004 , G03F7/038 , G03C1/73
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/121 , Y10S430/122 , Y10S430/126 , Y10S430/128
摘要： Proposed is an alkali-developable negative-working photoresist composition in the form of a solution capable of exhibiting high sensitivity and greatly improved stability of the resist layer of the composition on a substrate surface after pattern-wise exposure to actinic rays and kept for a substantial length of time before further processing. The photoresist composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a copolymer of hydroxystyrene and styrene; (b) a compound capable of releasing an acid when irradiated with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; (c) a crosslinking agent selected from the group consisting of melamine resins and urea resins substituted at the N-positions by methylol groups, alkoxy methyl groups or a combination thereof; and (d) a sensitivity improver which is hexa(methoxymethyl) melamine or di(methoxymethyl) urea, each in a specified proportion.
摘要翻译：提出了一种可显影的负性光致抗蚀剂组合物，其形式为能够显示出高灵敏度并且大大提高组合物的抗蚀剂层在图案形式暴露于光化射线之后在基材表面上的稳定性，并保持基本上进一步处理之前的时间长短。光致抗蚀剂组合物包含作为必要成分的（a）碱溶性树脂，例如羟基苯乙烯和苯乙烯的共聚物; （b）当用诸如三（2,3-二溴丙基）异氰脲酸酯的光化射线照射时能够释放酸的化合物; （c）选自三聚氰胺树脂和在N-位被羟甲基取代的尿素树脂的交联剂，烷氧基甲基或其组合; 和（d）灵敏度改进剂，其为六（甲氧基甲基）三聚氰胺或二（甲氧基甲基）脲，各自为特定比例。

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