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21. 发明授权

US06737747B2 Advanced BEOL interconnect structures with low-k PE CVD cap layer and method thereof 有权
公开(公告)号：US06737747B2
公开(公告)日：2004-05-18
申请号：US10047965
申请日：2002-01-15
申请人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
发明人： Edward Barth , John A. Fitzsimmons , Stephen M. Gates , Thomas H. Ivers , Sarah L. Lane , Jia Lee , Ann McDonald , Vincent McGahay , Darryl D. Restaino
IPC分类号： H01L2348
CPC分类号： H01L21/76834 , H01L21/31144 , H01L21/3148 , H01L21/31612 , H01L21/31633 , H01L21/3185 , H01L21/76801 , H01L21/76807 , H01L21/76832 , H01L21/76838 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a diffusion barrier or cap layer having a low dielectric constant (low-k), where the cap layer is formed of silicon nitride by a plasma-enhanced chemical vapor deposition (PE CVD) process. The metallization structure also includes an inter-layer dielectric (ILD) formed of a carbon-containing dielectric material having a dielectric constant of less than about 4, and a continuous hardmask layer overlying the ILD which is preferably formed of silicon nitride or silicon carbide. A method for forming the BEOL metallization structure is also disclosed. The method includes a pre-clean or pre-activation step to improve the adhesion of the cap layer to the underlying copper conductors. The pre-clean or pre-activation step comprises exposing the copper surface to a reducing plasma including hydrogen, ammonia, nitrogen and/or noble gases.

22. 发明授权

US07407605B2 Manufacturable CoWP metal cap process for copper interconnects 有权
标题翻译：用于铜互连的可制造的CoWP金属帽工艺
公开(公告)号：US07407605B2
公开(公告)日：2008-08-05
申请号：US11751788
申请日：2007-05-22
申请人： Darryl D. Restaino , Donald F. Canaperi , Judith M. Rubino , Sean P. E. Smith , Richard O. Henry , James E. Fluegel , Mahadevaiyer Krishnan
发明人： Darryl D. Restaino , Donald F. Canaperi , Judith M. Rubino , Sean P. E. Smith , Richard O. Henry , James E. Fluegel , Mahadevaiyer Krishnan
IPC分类号： H01B1/00
CPC分类号： H01L21/288 , C23C18/1241 , C23C18/1607 , C23C18/1608 , C23C18/1844 , C23C18/50 , H01L21/76849 , H01L21/76874 , H05K3/244 , H05K2203/0716 , H05K2203/072
摘要： An aqueous seeding solution of palladium acetate, acetic acid and chloride.
摘要翻译：乙酸钯，乙酸和氯化钠的水溶液接种溶液。

23. 发明授权

US06083823A Metal deposition process for metal lines over topography 失效
公开(公告)号：US06083823A
公开(公告)日：2000-07-04
申请号：US672878
申请日：1996-06-28
申请人： Parth P. Dave , Nancy A. Greco , Ernest N. Levine , Darryl D. Restaino
发明人： Parth P. Dave , Nancy A. Greco , Ernest N. Levine , Darryl D. Restaino
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76877
摘要： A metal layer is formed at high deposition rate over severe topography by a two step process including formation of a seed layer by cold deposition followed by a second portion of the metal layer deposited at a temperature approximating but below a temperature at which metal from a lower metal layer can extrude through vias reaching thereto. The seed layer is preferably limited to a thickness at which the conformality of the cold-deposited metal will not significantly increase severity of surface topography, generally about one-fourth the thickness of the hot-deposited layer. Via connections are formed without voids and a more planar metal layer surface is formed which allows formation of a protective/anti-reflective layer with good integrity while enhancing subsequent lithographic patterning, thereby eliminating alteration of metal surface chemistry by resist developers and resultant residual metal included within the severe topography.

24. 发明申请

US20130110448A1 Metrology Management 有权
标题翻译：计量管理
公开(公告)号：US20130110448A1
公开(公告)日：2013-05-02
申请号：US13282776
申请日：2011-10-27
申请人： William K. Hoffman, JR. , Timothy L. Holmes , Jonathan Levy , Christopher E. Pepe , Darryl D. Restaino , Eric P. Solecky , Roger M. Young
发明人： William K. Hoffman, JR. , Timothy L. Holmes , Jonathan Levy , Christopher E. Pepe , Darryl D. Restaino , Eric P. Solecky , Roger M. Young
IPC分类号： G06F15/00
CPC分类号： G06Q10/06395
摘要： A method for managing a metrology system includes receiving a part, identifying, with a processing device, a part type associated with the part, retrieving, with the processing device, test rule logic associated with the part type from a database, retrieving, with the processing device, measurement data associated with the identified part type, processing, with the processing device, the measurement data, applying, with the processing device, the test rule logic to the processed measurement data to determine whether the part should be measured, outputting the part responsive to determining that the part should not be measured, and incrementing, with the processing device, a counter and saving a value of the counter in the database responsive to outputting the part responsive to determining that the part should not be measured.
摘要翻译：一种用于管理度量系统的方法包括接收部件，用处理设备识别与该部件相关联的部件类型，使用处理设备从数据库检索与部件类型相关联的测试规则逻辑，处理装置，与识别的部件类型相关联的测量数据，处理装置，测量数据，使用处理装置将测试规则逻辑应用于处理的测量数据，以确定是否应该测量部件，输出部分响应于确定不应该测量该部分，并且随着处理装置递增计数器并且响应于响应于确定该部分不被测量而输出该部分而在数据库中保存计数器的值。

25. 发明授权

US07678258B2 Void-free damascene copper deposition process and means of monitoring thereof 失效
标题翻译：无空隙镶嵌铜沉积工艺及其监控手段
公开(公告)号：US07678258B2
公开(公告)日：2010-03-16
申请号：US10615794
申请日：2003-07-10
申请人： Panayotis Andricacos , Dean S. Chung , Hariklia Deligianni , James E. Fluegel , Keith T. Kwietniak , Peter S. Locke , Darryl D. Restaino , Soon-Cheon Seo , Philippe M. Vereecken , Erick G. Walton
发明人： Panayotis Andricacos , Dean S. Chung , Hariklia Deligianni , James E. Fluegel , Keith T. Kwietniak , Peter S. Locke , Darryl D. Restaino , Soon-Cheon Seo , Philippe M. Vereecken , Erick G. Walton
IPC分类号： C25D5/00
CPC分类号： C23C18/1617 , C23C18/1683 , C25D21/12 , C25D21/18
摘要： An improved method of stabilizing wet chemical baths is disclosed. Typically such baths are used in processes for treating workpieces, for example, plating processes for plating metal onto substrates. In particular, the present invention relates to copper plating baths. More particularly, the present invention relates to the stability of copper plating baths. More particularly, the present invention relates to prevention of void formation by monitoring the accumulation of deleterious by-products in copper plating baths.
摘要翻译：公开了一种稳定湿化学浴的改进方法。通常，这种浴用于处理工件的工艺中，例如用于将金属电镀到基底上的电镀工艺。特别地，本发明涉及镀铜浴。更具体地说，本发明涉及镀铜浴的稳定性。更具体地，本发明涉及通过监测铜电镀浴中有害副产物的积累来防止空隙形成。

26. 发明授权

US06784485B1 Diffusion barrier layer and semiconductor device containing same 有权
标题翻译：扩散阻挡层和含有它的半导体器件
公开(公告)号：US06784485B1
公开(公告)日：2004-08-31
申请号：US09502729
申请日：2000-02-11
申请人： Stephan Alan Cohen , Timothy Joseph Dalton , John Anthony Fitzsimmons , Stephen McConnell Gates , Lynne M. Gignac , Paul Charles Jamison , Kang-Wook Lee , Sampath Purushothaman , Darryl D. Restaino , Eva Simonyi , Horatio Seymour Wildman
发明人： Stephan Alan Cohen , Timothy Joseph Dalton , John Anthony Fitzsimmons , Stephen McConnell Gates , Lynne M. Gignac , Paul Charles Jamison , Kang-Wook Lee , Sampath Purushothaman , Darryl D. Restaino , Eva Simonyi , Horatio Seymour Wildman
IPC分类号： H01L29792
CPC分类号： H01L21/76832 , H01L21/3185 , H01L21/76826 , H01L21/76834 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device containing a diffusion barrier layer is provided. The semiconductor device includes at least a semiconductor substrate containing conductive metal elements; and, a diffusion barrier layer applied to at least a portion of the substrate in contact with the conductive metal elements, the diffusion barrier layer having an upper surface and a lower surface and a central portion, and being formed from silicon, carbon, nitrogen and hydrogen with the nitrogen being non-uniformly distributed throughout the diffusion barrier layer. Thus, the nitrogen is more concentrated near the lower and upper surfaces of the diffusion barrier layer as compared to the central portion of the diffusion barrier layer. Methods for making the semiconductor devices are also provided.
摘要翻译：提供了包含扩散阻挡层的半导体器件。半导体器件至少包括含有导电金属元素的半导体衬底; 以及扩散阻挡层，其被施加到与所述导电金属元件接触的所述基板的至少一部分，所述扩散阻挡层具有上表面，下表面和中心部分，并且由硅，碳，氮和氢与氮在整个扩散阻挡层中不均匀地分布。因此，与扩散阻挡层的中心部分相比，氮在扩散阻挡层的下表面和上表面附近更集中。还提供了制造半导体器件的方法。

27. 发明授权

US06726996B2 Laminated diffusion barrier 有权
标题翻译：层压扩散屏障
公开(公告)号：US06726996B2
公开(公告)日：2004-04-27
申请号：US09858687
申请日：2001-05-16
申请人： Edward Paul Barth , Stephan A. Cohen , Chester Dziobkowski , John Anthony Fitzsimmons , Stephen McConnell Gates , Thomas Henry Ivers , Sampath Purushothaman , Darryl D. Restaino , Horatio Seymour Wildman
发明人： Edward Paul Barth , Stephan A. Cohen , Chester Dziobkowski , John Anthony Fitzsimmons , Stephen McConnell Gates , Thomas Henry Ivers , Sampath Purushothaman , Darryl D. Restaino , Horatio Seymour Wildman
IPC分类号： B32B300
CPC分类号： H01L21/76832 , B32B27/08 , H01L21/76834 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , Y10T428/24917 , Y10T428/31663 , Y10T428/31681 , Y10T428/31696 , H01L2924/00
摘要： A diffusion barrier that has a low dielectric constant, k, yet resistant to oxygen and/or moisture permeability is provided. The diffusion barrier includes a dielectric stack having at least two or more dielectric films, each film having a dielectric constant of about 8 or less, wherein the dielectric stack comprises alternating films composed of a high-permeability material and a low-permeability material. A semiconductor structure including substrate having at least one wiring region and the inventive diffusion barrier formed on a surface of the substrate is also provided.
摘要翻译：提供了具有低介电常数k但仍具有耐氧和/或透湿性的扩散阻挡层。扩散阻挡层包括具有至少两个或更多个介电膜的电介质堆叠，每个膜具有约8或更小的介电常数，其中该电介质叠层包括由高导磁率材料和低导磁率材料构成的交替膜。还提供了包括具有形成在基板的表面上的至少一个布线区域和本发明的扩散阻挡层的基板的半导体结构。

28. 发明授权

US06238532B1 Radio-frequency coil for use in an ionized physical vapor deposition apparatus 失效
标题翻译：用于电离物理气相沉积装置的射频线圈
公开(公告)号：US06238532B1
公开(公告)日：2001-05-29
申请号：US09430831
申请日：1999-10-29
申请人： Stephen Mark Rossnagel , Darryl D. Restaino , Andrew Herbert Simon , Pavel Smetana
发明人： Stephen Mark Rossnagel , Darryl D. Restaino , Andrew Herbert Simon , Pavel Smetana
IPC分类号： C23C1440
CPC分类号： H01J37/321 , C23C14/32 , C23C14/3471
摘要： A cooling structure and a reinforcing structure are described for use with a radio-frequency coil in an ionized physical vapor deposition apparatus. The cooling structure includes a portion for carrying coolant and is proximate to the RF coil along the outer circumference thereof. The cooling structure is shaped relative to the RF coil so that thermal expansion of the RF coil brings the RF coil into close contact with the cooling structure, thereby facilitating heat transfer from the RF coil to the coolant. The reinforcing structure is similarly shaped, and may be integrated with the cooling structure. In addition, the RF coil or cooling/reinforcing structure may be mounted to the wall of the process chamber with telescoping mounting posts, which permit the RF coil to maintain its shape while undergoing thermal expansion. The parasitic inductance of the RF coil leads is reduced by arranging those leads coaxially, thereby minimizing power losses in the RF coil.
摘要翻译：描述了用于电离物理气相沉积设备中的射频线圈的冷却结构和加强结构。冷却结构包括用于承载冷却剂并且沿着其外圆周靠近RF线圈的部分。冷却结构相对于RF线圈成形，使得RF线圈的热膨胀使RF线圈与冷却结构紧密接触，从而有助于从RF线圈到冷却剂的热传递。加强结构类似地成形，并且可以与冷却结构集成。此外，RF线圈或冷却/加强结构可以用伸缩式安装柱安装到处理室的壁上，这允许RF线圈在经历热膨胀的同时保持其形状。 RF线圈引线的寄生电感通过将这些引线同轴布置而减小，从而使RF线圈中的功率损耗最小化。

29. 发明授权

US09652729B2 Metrology management 有权
公开(公告)号：US09652729B2
公开(公告)日：2017-05-16
申请号：US13282776
申请日：2011-10-27
申请人： William K. Hoffman, Jr. , Timothy L. Holmes , Jonathan Levy , Christopher E. Pepe , Darryl D. Restaino , Eric P. Solecky , Roger M. Young
发明人： William K. Hoffman, Jr. , Timothy L. Holmes , Jonathan Levy , Christopher E. Pepe , Darryl D. Restaino , Eric P. Solecky , Roger M. Young
IPC分类号： G06F15/00 , G06Q10/06
CPC分类号： G06Q10/06395
摘要： A method for managing a metrology system includes receiving a part, identifying, with a processing device, a part type associated with the part, retrieving, with the processing device, test rule logic associated with the part type from a database, retrieving, with the processing device, measurement data associated with the identified part type, processing, with the processing device, the measurement data, applying, with the processing device, the test rule logic to the processed measurement data to determine whether the part should be measured, outputting the part responsive to determining that the part should not be measured, and incrementing, with the processing device, a counter and saving a value of the counter in the database responsive to outputting the part responsive to determining that the part should not be measured.

30. 发明授权

US07253106B2 Manufacturable CoWP metal cap process for copper interconnects 有权
标题翻译：用于铜互连的可制造的CoWP金属帽工艺
公开(公告)号：US07253106B2
公开(公告)日：2007-08-07
申请号：US10905230
申请日：2004-12-22
申请人： Darryl D. Restaino , Donald F. Canaperi , Judith M. Rubino , Sean P. E. Smith , Richard O. Henry , James E. Fluegel , Mahadevaiyer Krishnan
发明人： Darryl D. Restaino , Donald F. Canaperi , Judith M. Rubino , Sean P. E. Smith , Richard O. Henry , James E. Fluegel , Mahadevaiyer Krishnan
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1241 , C23C18/1607 , C23C18/1608 , C23C18/1844 , C23C18/50 , H01L21/76849 , H01L21/76874 , H05K3/244 , H05K2203/0716 , H05K2203/072
摘要： A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.
摘要翻译：一种以可再生的方式对铜上的CoWP合金进行无电镀的方法，该方法对于可制造的工艺是有效的。在该方法中，通过乙酸钯，乙酸和氯化物的水性接种溶液将铜（Pd）种子层沉积在铜上。此后，应用络合溶液以除去吸附在除铜之外的表面上的任何Pd离子。最后，将铜（Co），钨（W）和磷（P）的电镀溶液施加到铜上，以便在Pd种子和铜上沉积CoWP层。

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