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21. 发明授权

US06773576B2 Anode assembly for plating and planarizing a conductive layer 有权
标题翻译：用于电镀和平坦化导电层的阳极组件
公开(公告)号：US06773576B2
公开(公告)日：2004-08-10
申请号：US10251377
申请日：2002-09-20
申请人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
发明人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
IPC分类号： C25F302
CPC分类号： C25D17/14 , C25F7/00
摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.
摘要翻译：可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。还提供了可以将溶液输送到所述阳极腔的溶液输送结构。溶液输送结构可以包含在进行操作的室内。护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

22. 发明授权

US06482307B2 Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing 有权
标题翻译：用于全面电镀或电解抛光的与晶片表面电接触的方法和装置
公开(公告)号：US06482307B2
公开(公告)日：2002-11-19
申请号：US09735546
申请日：2000-12-14
申请人： Jalal Ashjaee , Boguslaw A. Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
发明人： Jalal Ashjaee , Boguslaw A. Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
IPC分类号： C25D518
CPC分类号： C25D17/001 , C25D7/123 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.
摘要翻译：通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。在阳极和电接触之间施加电势，并且晶片相对于阳极和电触点移动。因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。

23. 发明授权

US07476304B2 Apparatus for processing surface of workpiece with small electrodes and surface contacts 有权
标题翻译：用于用小电极和表面接触处理工件表面的装置
公开(公告)号：US07476304B2
公开(公告)日：2009-01-13
申请号：US10947628
申请日：2004-09-21
申请人： Jalal Ashjaee , Boguslaw Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
发明人： Jalal Ashjaee , Boguslaw Nagorski , Bulent M. Basol , Homayoun Talieh , Cyprian Uzoh
IPC分类号： C25D17/00 , C25D5/00
CPC分类号： C25F7/00 , C25D7/123 , C25D17/001 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.
摘要翻译：通过提供具有正面与工件正面的阳极区域并将工件正面与至少一个电气电连接的阳极进行导电材料沉积在导电材料上或从半导体工件的工件正面去除导电材料通过将电触点和工件正面推入彼此靠近，在阳极区域外部接触。在阳极和电接触之间施加电位，并且工件相对于阳极和电触点移动。因此允许在工件正面侧面上进行全面电镀或电解抛光。

24. 发明授权

US07309413B2 Providing electrical contact to the surface of a semiconductor workpiece during processing 有权
标题翻译：在加工期间向半导体工件的表面提供电接触
公开(公告)号：US07309413B2
公开(公告)日：2007-12-18
申请号：US10459321
申请日：2003-06-10
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D5/04 , C25D7/12 , C25F3/12
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
摘要翻译：可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

25. 发明申请

US20050034976A1 Method and apparatus for plating and polishing semiconductor substrate 有权
标题翻译：电镀和抛光半导体衬底的方法和装置
公开(公告)号：US20050034976A1
公开(公告)日：2005-02-17
申请号：US10946703
申请日：2004-09-21
申请人： Homayoun Talieh , Cyprian Uzoh
发明人： Homayoun Talieh , Cyprian Uzoh
IPC分类号： B24B37/16 , C25D5/06 , C25D5/22 , C25D7/12 , C25D17/00 , C25D17/12 , C25D17/14 , C25F7/00 , H01L21/288 , H01L21/304 , H01L21/3205 , H01L21/321 , C25D5/48
CPC分类号： B24B37/16 , C25D5/06 , C25D5/22 , C25D7/123 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/3212
摘要： The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.
摘要翻译：本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。这通过在单个设备中提供多个室来实现，其中一个室可以用于电镀/沉积导电材料，并且另一个室可以用于抛光半导体衬底。电镀/沉积工艺可以使用刷镀或电化学机械沉积进行，并且可以使用电抛光或化学机械抛光进行抛光工艺。本发明还提供一种用于将导电材料间歇地施加到半导体衬底的方法和装置，并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。此外，本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。

26. 发明授权

US06852630B2 Electroetching process and system 有权
标题翻译：电蚀过程和系统
公开(公告)号：US06852630B2
公开(公告)日：2005-02-08
申请号：US09841622
申请日：2001-04-23
申请人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Halit N. Yakupoglu , Homayoun Talieh
IPC分类号： B23H5/08 , C25F3/14 , H01L21/288 , H01L21/321 , H01L21/3213 , H01L21/768 , H01L21/302
CPC分类号： H01L21/32115 , B23H5/08 , C25F3/14 , H01L21/2885 , H01L21/32134 , H01L21/7684
摘要： A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.
摘要翻译：用于可选地沉积或蚀刻晶片层的系统包括与晶片相对的掩模板，掩模板具有将溶液输送到晶片的多个开口。电极组件具有第一电极部件和第二电极部件，该第二电极部件具有可操作地与晶片的周边部分和中心部分接合的通道。通道将解决方案传输到面罩。

27. 发明授权

US07282124B2 Device providing electrical contact to the surface of a semiconductor workpiece during processing 失效
公开(公告)号：US07282124B2
公开(公告)日：2007-10-16
申请号：US10459320
申请日：2003-06-10
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D17/00
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

28. 发明授权

US06942780B2 Method and apparatus for processing a substrate with minimal edge exclusion 有权
标题翻译：用于处理具有最小边缘排除的基板的方法和装置
公开(公告)号：US06942780B2
公开(公告)日：2005-09-13
申请号：US10460032
申请日：2003-06-11
申请人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
发明人： Bulent M. Basol , Cyprian Uzoh , Homayoun Talieh
IPC分类号： C25D7/12 , C25D17/00 , C25D17/08 , C25D21/00 , H01L21/288 , H01L21/321 , H01L21/768 , C25D5/00 , C25D5/08 , C25F3/00
CPC分类号： C25D5/02 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/3212 , H01L21/76877
摘要： An apparatus for processing a material on a wafer surface includes a cavity defined by a peripheral wall and configured to direct a process solution and direct it to the surface to to a first wafer surface region without being directed to a second wafer surface region, a head configured to hold the wafer so that the surface of the wafer faces the cavity, and an electrical contact member positioned outside the cavity peripheral wall and configured to contact the second wafer surface region extending beyond the cavity, when the wafer is moved relative to the contact member. Advantages of the invention include substantially full surface treatment of the wafer.
摘要翻译：用于处理晶片表面上的材料的设备包括由周壁限定的空腔，并且被配置为引导处理溶液并将其引导到表面到达第一晶片表面区域而不被引导到第二晶片表面区域，头部被配置为保持所述晶片使得所述晶片的表面面向所述空腔;以及电接触构件，其定位在所述腔周壁外部并且被配置为当所述晶片相对于所述触点移动时接触延伸超过所述腔的所述第二晶片表面区域会员。本发明的优点包括晶片的基本全表面处理。

29. 发明授权

US06478936B1 Anode assembly for plating and planarizing a conductive layer 有权
标题翻译：用于电镀和平坦化导电层的阳极组件
公开(公告)号：US06478936B1
公开(公告)日：2002-11-12
申请号：US09568584
申请日：2000-05-11
申请人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
发明人： Rimma Volodarsky , Konstantin Volodarsky , Cyprian Uzoh , Homayoun Talieh , Douglas W. Young
IPC分类号： C25B1103
CPC分类号： C25D17/14 , C25F7/00
摘要： A particular anode assembly can be used to supply a solution for any of a plating operation, a planarization operation, and a plating and planarization operation to be performed on a semiconductor wafer. The anode assembly includes a rotatable shaft disposed within a chamber in which the operation is performed, an anode housing connected to the shaft, and a porous pad support plate attached to the anode housing. The support plate has a top surface adapted to support a pad which is to face the wafer, and, together with the anode housing, defines an anode cavity. A consumable anode may be provided in the anode cavity to provide plating material to the solution. A solution delivery structure by which the solution can be delivered to said anode cavity is also provided. The solution delivery structure may be contained within the chamber in which the operation is performed. A shield can also be mounted between the shaft and an associated spindle to prevent leakage of the solution from the chamber.
摘要翻译：可以使用特定的阳极组件来提供用于在半导体晶片上进行的电镀操作，平面化操作和电镀和平面化操作中的任何一种的解决方案。阳极组件包括设置在其中执行操作的室内的可旋转轴，连接到轴的阳极壳体和附接到阳极壳体的多孔垫支撑板。支撑板具有适于支撑面向晶片的焊盘的顶表面，并且与阳极壳体一起限定阳极腔。可以在阳极腔中设置消耗性阳极以向溶液提供电镀材料。还提供了可以将溶液输送到所述阳极腔的溶液输送结构。溶液输送结构可以包含在进行操作的室内。护罩还可以安装在轴和相关主轴之间，以防止溶液从腔室泄漏。

30. 发明授权

US07491308B2 Method of making rolling electrical contact to wafer front surface 失效
标题翻译：制造与晶片正面滚动电接触的方法
公开(公告)号：US07491308B2
公开(公告)日：2009-02-17
申请号：US11123268
申请日：2005-05-05
申请人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
发明人： Homayoun Talieh , Cyprian Uzoh , Bulent M. Basol
IPC分类号： C25D5/00 , C25B9/00
CPC分类号： B23H3/04 , B23H5/08 , C25D5/08 , C25D17/00 , C25D17/001 , C25D17/005 , C25F7/00 , H01L21/2885
摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.
摘要翻译：可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。

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