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21. 发明申请

US20120051872A1 INTEGRATED APPARATUS TO ASSURE WAFER QUALITY AND MANUFACTURABILITY 有权
标题翻译：整体设备，以确保质量和制造能力
公开(公告)号：US20120051872A1
公开(公告)日：2012-03-01
申请号：US12869171
申请日：2010-08-26
申请人： Shao-Yen Ku , Chi-Ming Yang , Chiang Ming-Tsao , Yu-Fen Tzeng , Chin-Hsiang Lin
发明人： Shao-Yen Ku , Chi-Ming Yang , Chiang Ming-Tsao , Yu-Fen Tzeng , Chin-Hsiang Lin
IPC分类号： H01L21/677
CPC分类号： H01L21/67011 , H01L21/67155 , H01L21/67201 , H01L21/677 , H01L21/67703 , H01L21/67745 , H01L21/67772 , H01L21/67778 , Y10S414/135 , Y10S414/139
摘要： The present disclosure provides a system and method for processing a semiconductor substrate wherein a substrate is received at a load lock interface. The substrate is transferred from the load lock interface to a process module using a first module configured for unprocessed substrates. A manufacturing process is performed on the substrate within the process module. Thereafter, the substrate is transferred from the process module to the load lock interface using a second module configured for processed substrates.
摘要翻译：本公开提供了一种用于处理半导体衬底的系统和方法，其中在负载锁定接口处接收衬底。使用配置为未处理基板的第一模块将基板从加载锁定接口传送到处理模块。在处理模块内的基板上进行制造工艺。此后，使用配置成处理的基板的第二模块将基板从处理模块传送到加载锁定接口。

22. 发明申请

US20120001262A1 METAL CONDUCTOR CHEMICAL MECHANICAL POLISH 有权
标题翻译：金属导体化学机械抛光
公开(公告)号：US20120001262A1
公开(公告)日：2012-01-05
申请号：US12829664
申请日：2010-07-02
申请人： Huang Soon Kang , Han-Hsin Kuo , Chi-Ming Yang , Shwang-Ming Jeng , Chin-Hsiang Lin
发明人： Huang Soon Kang , Han-Hsin Kuo , Chi-Ming Yang , Shwang-Ming Jeng , Chin-Hsiang Lin
IPC分类号： H01L29/78 , B24B7/00 , H01L21/306
CPC分类号： H01L23/5386 , H01L21/02074 , H01L21/28079 , H01L21/67011 , H01L21/7684 , H01L29/495 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of fabricating a semiconductor device, a semiconductor device fabricated by such a method, and a chemical mechanical polishing (CMP) tool for performing such a method. In one embodiment, a method of fabricating a semiconductor device includes providing an integrated circuit (IC) wafer including a metal conductor in a trench of a dielectric layer over a substrate, and performing a chemical mechanical polishing (CMP) process to planarize the metal conductor and the dielectric layer. The method further includes cleaning the planarized metal conductor and dielectric layer to remove residue from the CMP process, rinsing the cleaned metal conductor and dielectric layer with an alcohol, and drying the rinsed metal conductor and dielectric layer in an inert gas environment.
摘要翻译：本公开提供了一种制造半导体器件的方法，通过这种方法制造的半导体器件和用于执行这种方法的化学机械抛光（CMP）工具。在一个实施例中，制造半导体器件的方法包括在衬底上的电介质层的沟槽中提供包括金属导体的集成电路（IC）晶片，以及执行化学机械抛光（CMP）工艺以平坦化金属导体和电介质层。该方法还包括清洁平坦化的金属导体和电介质层以除去CMP工艺中的残留物，用醇漂洗清洁的金属导体和介电层，并在惰性气体环境中干燥漂洗的金属导体和电介质层。

23. 发明授权

US07945533B2 Index replication using crawl modification information 有权
标题翻译：索引复制使用爬网修改信息
公开(公告)号：US07945533B2
公开(公告)日：2011-05-17
申请号：US11710100
申请日：2007-02-23
申请人： Muralidhar Krishnaprasad , Chi-Ming Yang , Joaquin A. Delgado , Meeten Bhavsar , Thomas H. Chang
发明人： Muralidhar Krishnaprasad , Chi-Ming Yang , Joaquin A. Delgado , Meeten Bhavsar , Thomas H. Chang
IPC分类号： G06F7/00 , G06F15/16
CPC分类号： G06F17/30864
摘要： Systems, methodologies, media, and other embodiments associated with index replication using crawl modification information are described. One exemplary system embodiment includes an enterprise search system comprising a target search system comprising an index logic that uses modified crawl information related to items associated with sources to maintain an index that supports searching of the items; and, a crawl search system comprising a pipeline processor configured to receive modified crawl information related to the items and to propagate the modified crawl information to the target system.
摘要翻译：描述了使用爬行修改信息与索引复制相关联的系统，方法，媒体和其他实施例。一个示例性系统实施例包括企业搜索系统，其包括目标搜索系统，该目标搜索系统包括索引逻辑，该索引逻辑使用与源相关联的项目相关的修改的爬网信息来维护支持搜索项的索引; 以及爬行搜索系统，包括流水线处理器，其被配置为接收与所述项目相关的经修改的爬网信息，并将修改的抓取信息传播到所述目标系统。

24. 发明授权

US07776757B2 Method of fabricating high-k metal gate devices 有权
标题翻译：制造高k金属栅极器件的方法
公开(公告)号：US07776757B2
公开(公告)日：2010-08-17
申请号：US12354394
申请日：2009-01-15
申请人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/28088 , H01L21/823857 , H01L29/517
摘要： The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F-] concentration greater than 0.01M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than −1.4 volts.
摘要翻译：本公开提供了一种用于制造半导体器件的方法。该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，通过原位沉积工艺形成第一金属层和第一硅层，图案化第一硅以去除覆盖在第二区域上的部分，使用图案化的第一硅层作为掩模来图案化第一金属层，以及去除图案化的第一硅层，包括施加溶液。该溶液包括具有大于0.01M的[F-]浓度的第一组分，构成为将溶液的pH调节至约4.3至约6.7的第二组分，以及构成为将溶液的电位调节为大于-1.4伏。

25. 发明申请

US20100190274A1 RTP SPIKE ANNEALING FOR SEMICONDUCTOR SUBSTRATE DOPANT ACTIVATION 有权
公开(公告)号：US20100190274A1
公开(公告)日：2010-07-29
申请号：US12360437
申请日：2009-01-27
申请人： Chin-Ming LIN , Chung-Ru Yang , Chi-Ming Yang
发明人： Chin-Ming LIN , Chung-Ru Yang , Chi-Ming Yang
IPC分类号： H01L21/02 , B05C11/00
CPC分类号： H01L21/324 , H01L21/67115
摘要： A semiconductor substrate has a plurality of active device patterns. At least some of the active device patterns comprise doped regions. The substrate has a plurality of surface regions, including the active device patterns and un-patterned regions, with respectively different reflectances for light in a near infrared wavelength. A first difference is determined, between a largest reflectance at the near infrared wavelength and a smallest reflectance at the near infrared wavelength. A second infrared wavelength is determined, for which a second difference between a largest reflectances a smallest reflectance is substantially less than the first difference at the near infrared wavelength. A rapid thermal processing (RTP) spike annealing dopant activation step is performed on the substrate using a second light source providing light at the second wavelength.
摘要翻译：半导体衬底具有多个有源器件图案。至少一些有源器件图案包括掺杂区域。衬底具有多个表面区域，包括有源器件图案和未图案化区域，对于近红外波长的光分别具有不同的反射率。在近红外波长处的最大反射率和近红外波长处的最小反射率之间确定第一差异。确定第二红外波长，对于该第二红外波长，最大反射率之间的最小反射率的第二差值实质上小于近红外波长处的第一差。使用提供第二波长的光的第二光源在衬底上进行快速热处理（RTP）尖峰退火掺杂剂激活步骤。

26. 发明申请

US20100109098A1 GATE STRUCTURE INCLUDING MODIFIED HIGH-K GATE DIELECTRIC AND METAL GATE INTERFACE 审中-公开
标题翻译：门结构包括改进的高K门电介质和金属栅接口
公开(公告)号：US20100109098A1
公开(公告)日：2010-05-06
申请号：US12339990
申请日：2008-12-19
申请人： Simon Su-Horng Lin , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L29/51 , H01L21/3205 , H01L21/4763 , H01L29/49 , H01L21/336
CPC分类号： H01L29/518 , H01L21/02181 , H01L21/022 , H01L21/0228 , H01L21/02362 , H01L21/28088 , H01L21/28194 , H01L21/28202 , H01L21/3141 , H01L21/31645 , H01L29/495 , H01L29/4966 , H01L29/513
摘要： A method of fabricating a gate of a semiconductor device is provided. In an embodiment, the method includes forming a gate dielectric layer on a semiconductor substrate. An interface layer is formed on the gate dielectric layer. In an embodiment, the gate dielectric layer includes HfO2 and the interface layer includes Hf—N. A work function metal layer may be formed on the interface layer. A device is also provided.
摘要翻译：提供一种制造半导体器件的栅极的方法。在一个实施例中，该方法包括在半导体衬底上形成栅极电介质层。界面层形成在栅介质层上。在一个实施例中，栅介质层包括HfO 2，界面层包括Hf-N。可以在界面层上形成功函数金属层。还提供了一种设备。

27. 发明申请

US20070208744A1 Flexible Authentication Framework 有权
标题翻译：灵活的认证框架
公开(公告)号：US20070208744A1
公开(公告)日：2007-09-06
申请号：US11680530
申请日：2007-02-28
申请人： Muralidhar Krishnaprasad , Mark Davis , Mark Ture , Cindy Hsin , Meeten Bhavsar , Hiroshi Koide , Joaquin Delgado , Chi-Ming Yang , Visar Nimani , Hui Ouyang , Sachin Bhatkar , Thomas Chang
发明人： Muralidhar Krishnaprasad , Mark Davis , Mark Ture , Cindy Hsin , Meeten Bhavsar , Hiroshi Koide , Joaquin Delgado , Chi-Ming Yang , Visar Nimani , Hui Ouyang , Sachin Bhatkar , Thomas Chang
IPC分类号： G06F17/30
CPC分类号： H04L63/08 , G06F17/30011 , G06F17/30321 , G06F17/30477 , G06F17/30554 , G06F17/30864 , G06F17/30867 , G06F21/31 , G06F21/6227 , H04L63/0815 , H04L63/083 , H04L63/102
摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.
摘要翻译：灵活可扩展的架构允许跨企业进行安全搜索。这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。该架构允许在整个企业中爬行和搜索各种或多个源，无论这些源是否符合常规用户角色模型。该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

28. 发明申请

US20070208716A1 Index replication using crawl modification information 有权
标题翻译：索引复制使用爬网修改信息
公开(公告)号：US20070208716A1
公开(公告)日：2007-09-06
申请号：US11710100
申请日：2007-02-23
申请人： Muralidhar Krishnaprasad , Chi-Ming Yang , Joaquin A. Delgado , Meeten Bhavsar , Thomas H. Chang
发明人： Muralidhar Krishnaprasad , Chi-Ming Yang , Joaquin A. Delgado , Meeten Bhavsar , Thomas H. Chang
IPC分类号： G06F17/30
CPC分类号： G06F17/30864
摘要： Systems, methodologies, media, and other embodiments associated with index replication using crawl modification information are described. One exemplary system embodiment includes an enterprise search system comprising a target search system comprising an index logic that uses modified crawl information related to items associated with sources to maintain an index that supports searching of the items; and, a crawl search system comprising a pipeline processor configured to receive modified crawl information related to the items and to propagate the modified crawl information to the target system.
摘要翻译：描述了使用爬行修改信息与索引复制相关联的系统，方法，媒体和其他实施例。一个示例性系统实施例包括企业搜索系统，其包括目标搜索系统，该目标搜索系统包括索引逻辑，该索引逻辑使用与源相关联的项目相关的修改的爬网信息来维护支持搜索项的索引; 以及爬行搜索系统，包括流水线处理器，其被配置为接收与所述项目相关的经修改的爬网信息，并将修改的抓取信息传播到所述目标系统。

29. 发明授权

US10857649B2 Method and apparatus for performing a polishing process in semiconductor fabrication 有权
公开(公告)号：US10857649B2
公开(公告)日：2020-12-08
申请号：US13240856
申请日：2011-09-22
申请人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Bo-I Lee , Huang Soon Kang , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： B24B37/32 , B24B9/06
摘要： The present disclosure provides an apparatus for fabricating a semiconductor device. The apparatus includes a polishing head that is operable to perform a polishing process to a wafer. The apparatus includes a retaining ring that is rotatably coupled to the polishing head. The retaining ring is operable to secure the wafer to be polished. The apparatus includes a soft material component located within the retaining ring. The soft material component is softer than silicon. The soft material component is operable to grind a bevel region of the wafer during the polishing process. The apparatus includes a spray nozzle that is rotatably coupled to the polishing head. The spray nozzle is operable to dispense a cleaning solution to the bevel region of the wafer during the polishing process.

30. 发明授权

US09299593B2 Semiconductor device cleaning method and apparatus 有权
标题翻译：半导体器件清洗方法及装置
公开(公告)号：US09299593B2
公开(公告)日：2016-03-29
申请号：US13210998
申请日：2011-08-16
申请人： Ming-Hsi Yeh , Kuo-Sheng Chuang , Ying-Hsueh Chang Chien , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Kuo-Sheng Chuang , Ying-Hsueh Chang Chien , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： H01L21/00 , H01L21/67 , B08B3/02
CPC分类号： H01L21/67051 , B08B3/024
摘要： A method includes providing a wafer and providing a first spray bar spaced a distance from the wafer. A first spray is dispensed from the first spray bar onto a first portion (e.g., half) of the wafer. Thereafter, the wafer is rotated. A second spray is dispensed from the first spray bar onto a second portion (e.g., half) of the rotated wafer. In embodiments, a plurality of spray bars are positioned above the wafer. One or more of the spray bars may be tunable in separation distance and/or angle of dispensing.
摘要翻译：一种方法包括提供晶片并提供与晶片间隔开一定距离的第一喷杆。将第一喷雾从第一喷雾棒分配到晶片的第一部分（例如一半）上。此后，晶片旋转。从第一喷杆将第二喷雾分配到旋转的晶片的第二部分（例如，一半）上。在实施例中，多个喷杆位于晶片上方。喷雾棒中的一个或多个可以以分离距离和/或分配角度来调节。

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