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21. 发明授权

US06190062B1 Cleaning chamber built into SEM for plasma or gaseous phase cleaning 有权
标题翻译：内置扫描电镜的清洗室进行等离子体或气相清洗
公开(公告)号：US06190062B1
公开(公告)日：2001-02-20
申请号：US09558492
申请日：2000-04-26
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Bryan K. Choo , Sanjay K. Yedur
IPC分类号： G03D1300
CPC分类号： H01J37/28 , H01J2237/2817
摘要： One aspect of the present invention relates to a method of inspecting a patterned substrate using an SEM, involving the steps of evaluating the patterned substrate to determine if charges exist thereon; introducing the patterned substrate having charges thereon into a processing chamber of the SEM; inspecting the patterned resist using an electron beam generated by the SEM; and introducing a cleaner containing ozone into the processing chamber of the SEM. Another aspect of the present invention relates to a system for processing a patterned substrate, containing a charge sensor for determining if charges exist on the patterned substrate and measuring the charges; a means for contacting the patterned substrate with a cleaner containing ozone to reduce the charges thereon; a controller for setting at least one of time of contact between the patterned substrate and the cleaner, temperature of the cleaner, concentration of ozone in the cleaner, and pressure under which contact between the patterned substrate and the cleaner occurs; and a device for inspecting the patterned substrate with an electron beam.
摘要翻译：本发明的一个方面涉及使用SEM检查图案化衬底的方法，包括以下步骤：评估图案化衬底以确定其中是否存在电荷; 将具有电荷的图案化衬底引入到SEM的处理室中; 使用由SEM产生的电子束检查图案化的抗蚀剂; 并将含有臭氧的清洁剂引入SEM的处理室。本发明的另一方面涉及一种用于处理图案化衬底的系统，其包含用于确定在图案化衬底上是否存在电荷并测量电荷的电荷传感器; 用于使图案化基底与含有臭氧的清洁剂接触以降低其上的电荷的装置; 用于设置图案化基板和清洁器之间的接触时间中的至少一个的控制器，清洁器的温度，清洁器中的臭氧浓度以及图案化基板和清洁器之间的接触发生的压力; 以及用于用电子束检查图案化衬底的装置。

22. 发明授权

US07065427B1 Optical monitoring and control of two layers of liquid immersion media 失效
标题翻译：两层液浸介质的光学监测与控制
公开(公告)号：US07065427B1
公开(公告)日：2006-06-20
申请号：US10979367
申请日：2004-11-01
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
IPC分类号： G06F19/00 , G02B7/00 , H01L21/00
CPC分类号： G03F7/7085 , G03F7/70341 , G03F7/70591
摘要： A multi-layer immersion medium monitoring system for a lithographic process monitors characteristics of an immersion medium of a semiconductor manufacturing process. The multi-layer immersion medium includes at least a first liquid of a first density (or viscosity) and a second liquid of a lower density (or viscosity), both of which are interspersed between a final optical component and a semiconductor layer. The higher density layer is provided to reduce turbulence in the immersion medium during the lithographic processes. A scatterometry system monitors optical characteristics of the multi-layer immersion medium to effectuate control of a lithographic process.
摘要翻译：用于光刻工艺的多层浸渍介质监测系统监测半导体制造工艺的浸渍介质的特性。多层浸渍介质至少包括第一密度（或粘度）的第一液体和较低密度（或粘度）的第二液体，它们都分散在最终的光学部件和半导体层之间。提供更高密度的层以在光刻过程中减少浸没介质中的湍流。散射测量系统监测多层浸没介质的光学特性，以实现光刻工艺的控制。

23. 发明授权

US06954678B1 Artificial intelligence system for track defect problem solving 失效
标题翻译：用于轨道缺陷问题解决的人工智能系统
公开(公告)号：US06954678B1
公开(公告)日：2005-10-11
申请号：US10261650
申请日：2002-09-30
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01R31/26 , G05B23/02 , G06F19/00 , H01L21/66
CPC分类号： H01L22/26 , G05B23/0286
摘要： A system and method facilitating lithography defect solution generation is provided. The invention includes a defect solution component and a defect alert component. The defect solution component provides potential solution(s) to a defect within the lithography process utilizing artificial intelligence technique(s) (e.g., Bayesian learning methods that perform analysis over alternative dependent structures and apply a score, Bayesian classifiers and other statistical classifiers, including decision tree learning methods, support vector machines, linear and non-linear regression and/or neural network).
摘要翻译：提供了一种促进光刻缺陷解决方案生成的系统和方法。本发明包括缺陷解决方案组件和缺陷警报组件。缺陷解决方案组件使用人工智能技术（例如，贝叶斯学习方法对替代依赖结构进行分析并应用分数贝叶斯分类器和其他统计分类器，包括决策树学习方法，支持向量机，线性和非线性回归和/或神经网络）。

24. 发明授权

US06592932B2 Nozzle arm movement for resist development 失效
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06592932B2
公开(公告)日：2003-07-15
申请号：US09814131
申请日：2001-03-21
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： B05D312
CPC分类号： H01L21/6715 , G03F7/3021
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a nozzle adapted to apply a predetermined volume of developer material on a photoresist material layer along a linear path having a length approximately equal to the diameter of the photoresist material layer. A movement system moves the nozzle to a first position offset from a central region of the photoresist material layer for applying a first predetermined volume of developer material to the photoresist material layer while the developer material is spin coated. The movement system also moves the nozzle to a second position offset from the central region for applying a second predetermined volume of developer material to the photoresist material layer while the developer is spin coated. The first position is located on an opposite side of the central region with respect to the second position. A method of adjusting the offset position and/or volume of developer material applied at the first and second position is also provided. The method utilizes developed photoresist material layer thickness data provided by a measurement system to adjust the offset position and/or volume of the developer.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括适于沿着具有大致等于光致抗蚀剂材料层的直径的直线路径的光致抗蚀剂材料层上施加预定体积的显影剂材料的喷嘴。移动系统将喷嘴移动到偏离光致抗蚀剂材料层的中心区域的第一位置，以在旋转涂覆显影剂材料的同时将第一预定体积的显影剂材料施加到光致抗蚀剂材料层。移动系统还将喷嘴移动到偏离中心区域的第二位置，以在旋涂涂覆显影剂的同时将第二预定体积的显影剂材料施加到光致抗蚀剂材料层。第一位置相对于第二位置位于中心区域的相反侧。还提供了一种调节在第一和第二位置施加的显影剂材料的偏移位置和/或体积的方法。该方法利用由测量系统提供的显影的光致抗蚀剂材料层厚度数据来调节显影剂的偏移位置和/或体积。

25. 发明授权

US06270579B1 Nozzle arm movement for resist development 有权
标题翻译：喷嘴臂运动用于抗蚀剂开发
公开(公告)号：US06270579B1
公开(公告)日：2001-08-07
申请号：US09429995
申请日：1999-10-29
申请人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
发明人： Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Michael K. Templeton , Sanjay K. Yedur
IPC分类号： B05C1102
CPC分类号： H01L21/6715 , G03F7/3028
摘要： A system and method is provided that facilitates the application of a uniform layer of developer material on a photoresist material layer. The system includes a multiple tip nozzle and a movement system that moves the nozzle to an operating position above a central region of a photoresist material layer located on a substrate, and applies a volume of developer as the nozzle scan moves across a predetermined path. The movement system moves the nozzle in two dimensions by providing an arm that has a first arm member that is pivotable about a first rotational axis and a second arm member that is pivotable about a second rotational axis or is movable along a translational axis. The system also provides a measurement system that measures the thickness uniformity of the developed photoresist material layer disposed on a test wafer. The thickness uniformity data is used to reconfigure the predetermined path of the nozzle as the developer is applied. The thickness uniformity data can also be used to adjust the volume of developer applied along the path and/or the volume flow rate.
摘要翻译：提供了一种有助于在光致抗蚀剂材料层上施加均匀的显影剂材料层的系统和方法。该系统包括多个尖端喷嘴和运动系统，该运动系统将喷嘴移动到位于基板上的光致抗蚀剂材料层的中心区域上方的操作位置，并且当喷嘴扫描移动穿过预定路径时施加一定体积的显影剂。移动系统通过提供具有第一臂构件的臂来移动喷嘴，该臂具有可围绕第一旋转轴线枢转的第一臂构件和可围绕第二旋转轴线枢转或可沿着平移轴线移动的第二臂构件。该系统还提供了测量设置在测试晶片上的显影的光致抗蚀剂材料层的厚度均匀性的测量系统。当施加显影剂时，厚度均匀性数据用于重新配置喷嘴的预定路径。厚度均匀性数据也可用于调节沿路径施加的显影剂的体积和/或体积流量。

26. 发明授权

US06251570B1 Resist developer saving system using material to reduce surface tension and wet resist surface 有权
标题翻译：抵抗使用材料的显影剂储存系统，以减少表面张力和抗湿表面
公开(公告)号：US06251570B1
公开(公告)日：2001-06-26
申请号：US09604372
申请日：2000-06-27
申请人： Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Bhanwar Singh
发明人： Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Bhanwar Singh
IPC分类号： G03F732
CPC分类号： G03F7/32 , G03F7/322 , G03F7/38
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving the steps of exposing the semiconductor structure including the resist to acting radiation; contacting the semiconductor structure including the exposed resist with a solution comprising water and from about 0.01% to about 5% by weight of a surfactant; and developing the resist with a developer.
摘要翻译：在一个实施例中，本发明涉及一种处理包括其上的抗蚀剂的半导体结构的方法，包括将包括抗蚀剂的半导体结构暴露于作用辐射的步骤; 将包含曝光的抗蚀剂的半导体结构与包含水和约0.01重量％至约5重量％的表面活性剂的溶液接触; 并用开发商开发抗蚀剂。

27. 发明授权

US6136514A Resist developer saving system using material to reduce surface tension and wet resist surface 有权
标题翻译：抵抗使用材料的显影剂储存系统，以减少表面张力和抗湿表面
公开(公告)号：US6136514A
公开(公告)日：2000-10-24
申请号：US494699
申请日：2000-01-31
申请人： Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Bhanwar Singh
发明人： Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Bhanwar Singh
IPC分类号： G03F7/32 , G03F7/38
CPC分类号： G03F7/32 , G03F7/322 , G03F7/38
摘要： In one embodiment, the present invention relates to a method of processing a semiconductor structure including a resist thereon, involving the steps of exposing the semiconductor structure including the resist to actinic radiation; contacting the semiconductor structure including the exposed resist with a solution comprising water and from about 0.01% to about 5% by weight of a surfactant; and developing the resist with a developer.
摘要翻译：在一个实施例中，本发明涉及一种处理包括其上的抗蚀剂的半导体结构的方法，包括将包括抗蚀剂的半导体结构暴露于光化辐射的步骤; 将包含曝光的抗蚀剂的半导体结构与包含水和约0.01重量％至约5重量％的表面活性剂的溶液接触; 并用开发商开发抗蚀剂。

28. 发明授权

US07604903B1 Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK) 有权
标题翻译：具有侧壁吸收器的面罩能够在纳米印刷光刻（1XMASK）中印刷更精细的特征，
公开(公告)号：US07604903B1
公开(公告)日：2009-10-20
申请号：US10768515
申请日：2004-01-30
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G03F1/00 , G03F1/14
CPC分类号： G03F1/50
摘要： A mask is provided to be used with nanoprint lithography processes to facilitate reproduction of small features required for the production of integrated circuits. A translucent substrate is provided along with one or more three-dimensional features that include one or more vertical sidewalls. An absorbing material is deposited upon one or more of the vertical sidewalls so that light in an incident direction to an upper surface of the substrate will be absorbed by the absorbing material, resulting in light blocking features. One or more horizontal surfaces are formed upon one or more of the three-dimensional features, which allow light rays to exit a lower surface of the substrate unobstructed by the absorbing material.
摘要翻译：提供掩模以与纳米印刷光刻工艺一起使用，以便于再现生产集成电路所需的小特征。提供了一个半透明衬底以及包括一个或多个垂直侧壁的一个或多个三维特征。吸收材料沉积在一个或多个垂直侧壁上，使得在衬底的上表面的入射方向上的光将被吸收材料吸收，导致阻光特征。一个或多个水平表面形成在三维特征中的一个或多个上，这允许光线离开衬底的下表面而不被吸收材料阻挡。

29. 发明授权

US07221060B1 Composite alignment mark scheme for multi-layers in lithography 有权
标题翻译：光刻多层复合对准标记方案
公开(公告)号：US07221060B1
公开(公告)日：2007-05-22
申请号：US11074602
申请日：2005-03-08
申请人： Bhanwar Singh , Khoi A. Phan , Bharath Rangarajan , Iraj Emami , Ramkumar Subramanian
发明人： Bhanwar Singh , Khoi A. Phan , Bharath Rangarajan , Iraj Emami , Ramkumar Subramanian
IPC分类号： H01L23/544
CPC分类号： G03F7/70625 , G03F7/70633 , G03F9/7076 , Y10S438/975
摘要： Systems and/or methods are disclosed for aligning multiple layers of a multi-layer semiconductor device fabrication process and/or system utilizing a composite alignment mark. A component is provided to form the composite alignment mark, such that a first portion of the composite alignment mark is associated with a layer of the wafer and a second portion of the composite alignment mark is associated with a disparate layer of the wafer. An alignment component is utilized to align a reticle for a layer to be patterned to the composite alignment mark.
摘要翻译：公开了用于对准多层半导体器件制造工艺和/或利用复合对准标记的系统的多层的系统和/或方法。提供组件以形成复合对准标记，使得复合对准标记的第一部分与晶片的层相关联，并且复合对准标记的第二部分与晶片的不同层相关联。使用对准部件将待图案化的层的掩模版对准到复合对准标记。

30. 发明授权

US06915177B2 Comprehensive integrated lithographic process control system based on product design and yield feedback system 有权
标题翻译：基于产品设计和产量反馈系统的综合光刻过程控制系统
公开(公告)号：US06915177B2
公开(公告)日：2005-07-05
申请号：US10261569
申请日：2002-09-30
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G03F7/20 , H01L21/66 , G06F19/00
CPC分类号： G03F7/70525 , G03F7/70616 , G03F7/70858 , H01L22/20
摘要： The present invention provides systems and methods that facilitate performing fabrication process. Critical parameters are valued collectively as a quality matrix, which weights respective parameters according to their importance to one or more design goals. The critical parameters are weighted by coefficients according to information such as, product design, simulation, test results, yield data, electrical data and the like. The invention then can develop a quality index which is a composite “score” of the current fabrication process. A control system can then do comparisons of the quality index with design specifications in order to determine if the current fabrication process is acceptable. If the process is unacceptable, test parameters can be modified for ongoing processes and the process can be re-worked and re-performed for completed processes. As such, respective layers of a device can be customized for different specifications and quality index depending on product designs and yields.
摘要翻译：本发明提供了便于执行制造过程的系统和方法。关键参数被统称为质量矩阵，其根据其对一个或多个设计目标的重要性来对各个参数进行加权。关键参数根据产品设计，仿真，测试结果，产量数据，电气数据等信息对系数进行加权。然后，本发明可以开发质量指数，其是当前制造过程的综合“评分”。然后，控制系统可以将质量指标与设计规范进行比较，以便确定当前的制造过程是否可接受。如果该过程是不可接受的，则可以对正在进行的过程修改测试参数，并且可以对完成的过程重新处理和重新执行该过程。因此，根据产品设计和产量，可以针对不同的规格和质量指数定制装置的各个层。

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