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21. 发明授权

US06326637B1 Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device 有权
标题翻译：用于磁性隧道结装置的反铁磁交换耦合结构
公开(公告)号：US06326637B1
公开(公告)日：2001-12-04
申请号：US09420213
申请日：1999-10-18
申请人： Stuart Stephen Papworth Parkin , Mahesh Govind Samant
发明人： Stuart Stephen Papworth Parkin , Mahesh Govind Samant
IPC分类号： H01L2906
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/10
摘要： An antiferromagnetically exchange-coupled structure for use in various types of magnetic devices, such as magnetic tunnel junctions and spin-valve giant magnetoresistance recording heads, includes an antiferromagnetic layer formed of an alloy of osmium and manganese, wherein the osmium is present in the range of approximately 10 to 30 atomic %. The antiferromagnetic layer is deposited on a non-reactive underlayer, preferably one formed of a noble metal, such as platinum, palladium or alloys thereof. The antiferromagnetic material provides a strong exchange biasing for the ferromagnetic layer that is deposited on the antiferromagnetic layer. Iridium may be added to the osmium-manganese alloy, wherein the total of osmium and iridium is in the range of the approximately 10 to 30 atomic %, to increase the blocking temperature of the antiferromagnetic material. A template layer of permalloy (nickel-iron alloy) may be formed between the underlayer and the antiferromagnetic layer to improve the growth of the osmium-manganese alloy. The resulting antiferromagnetically exchange-coupled structure exhibits very high thermal stability, i.e., the magnetoresistance of magnetic tunnel junction devices is retained even during relatively high annealing process temperatures. This allows magnetic tunnel junction devices using the structure to be used as memory cells in magnetic random access memory arrays that are formed on substrates with electronic circuitry formed by conventional high-temperature CMOS processes and which require high temperature anneals of the completed memory chips.
摘要翻译：用于各种磁性装置（例如磁性隧道结和自旋阀巨磁电阻记录头）的反铁磁交换耦合结构包括由锇和锰合金形成的反铁磁层，其中锇存在于该范围内约10至30原子％。反铁磁层沉积在非反应性底层上，优选由贵金属形成的铂，钯或其合金形成。反铁磁材料为沉积在反铁磁层上的铁磁层提供强的交换偏置。铱可以添加到锇锰合金中，其中锇和铱的总和在大约10至30原子％的范围内，以增加反铁磁性材料的封闭温度。可以在底层和反铁磁层之间形成坡莫合金（镍 - 铁合金）的模板层，以改善锇锰合金的生长。所得到的反铁磁交换耦合结构表现出非常高的热稳定性，即即使在相对高的退火工艺温度下，磁性隧道结装置的磁阻仍然保持。这允许使用该结构的磁隧道结器件用作磁性随机存取存储器阵列中的存储器单元，其形成在具有由常规高温CMOS工艺形成的电子电路的衬底上，并且需要完成的存储器芯片的高温退火。

22. 发明授权

US06005753A Magnetic tunnel junction magnetoresistive read head with longitudinal and transverse bias 失效
标题翻译：磁隧道结磁阻读头，具有纵向和横向偏置
公开(公告)号：US06005753A
公开(公告)日：1999-12-21
申请号：US87322
申请日：1998-05-29
申请人： Robert Edward Fontana, Jr. , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
发明人： Robert Edward Fontana, Jr. , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
IPC分类号： G01R33/06 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/3903 , G11B2005/3996
摘要： A magnetic tunnel junction magnetoresistive read head has one fixed ferromagnetic layer and one generally rectangularly shaped sensing ferromagnetic layer on opposite sides of the tunnel barrier layer, and a biasing ferromagnetic layer located around the side edges and back edges of the sensing ferromagnetic layer. An electrically insulating layer separates the biasing layer from the edges of the sensing layer. The biasing layer is a continuous boundary biasing layer that has side regions and a back region to surround the three edges of the sensing layer. When the biasing layer is a single layer with contiguous side and back regions its magnetic moment can be selected to make an angle with the long edges of the sensing layer. In this manner the biasing layer provides both a transverse bias field to compensate for transverse ferromagnetic coupling and magnetostatic coupling fields acting on the sensing layer to thus provide for a linear response of the head and a longitudinal bias field to stabilize the head. The biasing layer may also be formed with discrete side regions and a back region. The discrete side regions may have a magnetic moment oriented in a different direction from the moment of the back region in order to provide the correct combination of transverse and longitudinal bias fields.
摘要翻译：磁性隧道结磁阻读取头在隧道势垒层的相对侧具有一个固定的铁磁层和一个大致矩形的感测铁磁层，以及位于感测铁磁层的侧边缘和后边缘周围的偏置铁磁层。电绝缘层将偏置层与感测层的边缘分开。偏置层是连续的边界偏置层，其具有围绕感测层的三个边缘的侧面区域和后部区域。当偏置层是具有相邻侧面和后部区域的单层时，其磁矩可以被选择成与感测层的长边缘形成一个角度。以这种方式，偏置层提供横向偏置场以补偿作用在感测层上的横向铁磁耦合和静磁耦合场，从而提供头部的线性响应和纵向偏置场以稳定头部。偏压层也可以形成有离散的侧部区域和后部区域。离散的侧部区域可以具有与从后部区域的力矩不同的方向定向的磁矩，以便提供横向和纵向偏置场的正确组合。

23. 发明授权

US5898547A Magnetic tunnel junction magnetoresistive read head with sensing layer as flux guide 失效
标题翻译：磁性隧道结磁阻读头，传感层作为助焊剂
公开(公告)号：US5898547A
公开(公告)日：1999-04-27
申请号：US957699
申请日：1997-10-24
申请人： Robert Edward Fontana, Jr. , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
发明人： Robert Edward Fontana, Jr. , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
IPC分类号： G11B5/39 , G11B5/40 , G11B5/33
CPC分类号： G11B5/3916 , G11B5/3169 , G11B5/3903 , G11B5/3967 , G11B5/40
摘要： A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ sensing or free ferromagnetic layer also functioning as a flux guide to direct magnetic flux from the magnetic recording medium to the tunnel junction. The MTJ fixed ferromagnetic layer has its front edge recessed from the sensing surface of the head. Both the fixed and free ferromagnetic layers are in contact with opposite surfaces of the MTJ tunnel barrier layer but the free ferromagnetic layer extends beyond the back edge of either the tunnel barrier layer or the fixed ferromagnetic layer, whichever back edge is closer to the sensing surface. This assures that the magnetic flux is non-zero in the tunnel junction region. The magnetization direction of the fixed ferromagnetic layer is fixed in a direction generally perpendicular to the sensing surface and thus to the magnetic recording medium, preferably by interfacial exchange coupling with an antiferromagnetic layer. The magnetization direction of the free ferromagnetic layer is aligned in a direction generally parallel to the surface of the medium in the absence of an applied magnetic field and is free to rotate in the presence of applied magnetic fields from the medium. A layer of high coercivity hard magnetic material adjacent the sides of the free ferromagnetic layer longitudinally biases the magnetization of the free ferromagnetic layer in the preferred direction.
摘要翻译：用于磁记录系统的磁隧道结（MTJ）磁阻读取头具有MTJ感测或自由铁磁层，还用作磁通指引，以将磁通量从磁记录介质引导到隧道结。 MTJ固定铁磁层的前缘从头部的感测表面凹陷。固定和自由铁磁层都与MTJ隧道势垒层的相对表面接触，但自由铁磁层延伸超过隧道势垒层或固定铁磁层的后边缘，无论哪个后边缘更靠近感测表面。这确保了隧道结区域中的磁通量不为零。固定铁磁层的磁化方向固定在大致垂直于感测表面的方向上，并因此固定在磁记录介质上，优选地通过与反铁磁层的界面交换耦合。在没有施加的磁场的情况下，自由铁磁层的磁化方向在大致平行于介质的表面的方向上排列，并且在存在来自介质的施加的磁场的情况下自由旋转。邻近自由铁磁层侧面的高矫顽磁性硬磁材料层沿优选方向纵向偏置自由铁磁层的磁化。

24. 发明授权

US5764567A Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response 失效
标题翻译：具有非磁性界面层的磁隧道结装置，用于改善磁场响应
公开(公告)号：US5764567A
公开(公告)日：1998-06-09
申请号：US758614
申请日：1996-11-27
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： G01R33/06 , G01R33/09 , G11B5/39 , G11C11/15 , G11C11/16 , H01F10/08 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01L43/08 , H01F41/325
摘要： A magnetic tunnel junction device, usable as a memory cell or an external magnetic field sensor, has a tunneling magnetoresistance response, as a function of applied magnetic field, that is substantially symmetric about zero field. The magnetic tunnel junction is made up of two ferromagnetic layers, one of which has its magnetic moment fixed and the other of which has its magnetic moment free to rotate, an insulating tunnel barrier layer between the ferromagnetic layers for permitting tunneling current perpendicularly through the layers, and a nonferromagnetic layer located at the interface between the tunnel barrier layer and one of the ferromagnetic layers. The nonferromagnetic layer increases the spacing between the tunnel barrier layer and the ferromagnetic layer at the interface and thus reduces the magnetic coupling between the fixed and free ferromagnetic layers, which has been determined to be the cause of unsymmetric tunneling magnetoresistance response about zero field. Even though the nonferromagnetic interface layer presents nonspin-polarized electronic states at the tunnel barrier layer interface, it unexpectedly does not cause a suppression of the tunneling magnetoresistance.
摘要翻译：可用作存储单元或外部磁场传感器的磁性隧道结器件具有作为施加磁场的函数的隧道磁阻响应，其基本上对称关于零场。磁性隧道结由两个铁磁层组成，其中一个铁磁体的磁矩固定，另一个磁矩具有其自由旋转的磁矩，铁磁层之间的绝缘隧道势垒层允许隧穿电流垂直穿过层以及位于隧道势垒层与一个铁磁层之间的界面处的非铁磁层。非铁磁层增加了界面处的隧道势垒层和铁磁层之间的间隔，从而减小了固定和自由铁磁层之间的磁耦合，这被确定为关于零场的不对称隧道磁阻响应的原因。尽管非铁磁界面层在隧道势垒层界面处呈现非极化极化的电子状态，但意外地不会导致隧道磁阻的抑制。

25. 发明授权

US5640343A Magnetic memory array using magnetic tunnel junction devices in the memory cells 失效
标题翻译：磁存储阵列在存储单元中使用磁性隧道结器件
公开(公告)号：US5640343A
公开(公告)日：1997-06-17
申请号：US618004
申请日：1996-03-18
申请人： William Joseph Gallagher , James Harvey Kaufman , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
发明人： William Joseph Gallagher , James Harvey Kaufman , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/22 , G11C13/00
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16
摘要： A nonvolatile magnetic random access memory (MRAM) is an array of individual magnetic memory cells. Each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series. Each MTJ is formed of a pinned ferromagnetic layer whose magnetization direction is prevented from rotating, a free ferromagnetic layer whose magnetization direction is free to rotate between states of parallel and antiparallel to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier between and in contact with the two ferromagnetic layers. Each memory cell has a high resistance that is achieved in a very small surface area by controlling the thickness, and thus the electrical barrier height, of the tunnel barrier layer. The memory cells in the array are controlled by only two lines, and the write currents to change the magnetic state of an MTJ, by use of the write currents' inherent magnetic fields to rotate the magnetization of the free layer, do not pass through the tunnel barrier layer. All MTJ elements, diodes, and contacts are vertically arranged at the intersection regions of the two lines and between the two lines to minimize the total MRAM surface area. The power expended to read or sense the memory cell's magnetic state is reduced by the high resistance of the MTJ and by directing the sensing current through a single memory cell.
摘要翻译：非易失磁性随机存取存储器（MRAM）是单个磁存储单元阵列。每个存储单元是磁性隧道结（MTJ）元件和串联电连接的二极管。每个MTJ由其磁化方向被阻止旋转的被钉扎的铁磁层形成，一个自由铁磁层，其磁化方向在被固定的铁磁层的固定磁化平行和反平行的状态之间自由旋转;以及绝缘隧道势垒并与两个铁磁层接触。每个存储单元具有通过控制隧道势垒层的厚度以及因此控制电势势垒高度而在非常小的表面积中实现的高电阻。阵列中的存储单元仅由两条线控制，并且通过使用写入电流的固有磁场来旋转自由层的磁化，改变MTJ的磁状态的写入电流不会通过隧道势垒层。所有MTJ元件，二极管和触点垂直布置在两条线和两条线之间的交叉区域，以最小化总MRAM表面积。消耗读取或感测存储单元的磁状态的功率被MTJ的高电阻降低，并通过将感测电流引导通过单个存储单元。

26. 发明授权

US08687415B2 Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfaces 有权
标题翻译：垂直磁化线中的畴壁运动具有具有工程界面的人造反铁磁耦合多层
公开(公告)号：US08687415B2
公开(公告)日：2014-04-01
申请号：US13543090
申请日：2012-07-06
申请人： Stuart Stephen Papworth Parkin , Luc Thomas , See-Hun Yang
发明人： Stuart Stephen Papworth Parkin , Luc Thomas , See-Hun Yang
IPC分类号： G11C11/14
CPC分类号： H01L43/10 , G11C11/161 , H01F1/0072 , H01F10/3218 , H01F10/3286 , H01L43/08 , H01L43/12
摘要： Magnetic wires that include two antiferromagnetically coupled magnetic regions show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. The magnetic regions preferably include Co, Ni, and Pt and exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the wire's layers are arranged.
摘要翻译：当畴壁由电流脉冲驱动时，包括两个反铁磁耦合磁区的磁线显示改善的畴壁运动特性。磁性区域优选包括Co，Ni和Pt并表现出垂直的磁各向异性，从而支持窄畴壁的传播。畴壁的运动方向可能受布线布线顺序的影响。

27. 发明申请

US20090324814A1 MgO Tunnel Barriers and Method of Formation 有权
标题翻译： MgO隧道障碍及形成方法
公开(公告)号：US20090324814A1
公开(公告)日：2009-12-31
申请号：US12554420
申请日：2009-09-04
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： B05D5/12
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.
摘要翻译：通过在合适的底层上沉积薄层的Mg，然后将氧和附加的Mg导向Mg层，形成MgO隧道势垒。氧与Mg层中的附加Mg和Mg反应形成具有优异隧道特性的MgO隧道势垒。如此形成的MgO隧道势垒可用于具有大于100％的隧道磁阻（TMR）值的磁隧道结。观察到已经退火并具有（100）晶体取向的结的最高TMR值。

28. 发明授权

US07570463B2 Magnetic tunnel junctions including crystalline and amorphous tunnel barrier materials 失效
标题翻译：磁隧道结，包括晶体和无定形隧道阻挡材料
公开(公告)号：US07570463B2
公开(公告)日：2009-08-04
申请号：US12146286
申请日：2008-06-25
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/3903 , G11C11/16 , H01L43/08
摘要： Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al2O3, which may be amorphous. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., greater than 100% at room temperature.
摘要翻译：公开了包括铁磁（或亚铁磁）材料和双层隧道势垒结构的磁隧道结。双层包括结晶材料，例如MgO或Mg-ZnO，Al 2 O 3可以是无定形的。如果使用MgO，则优选（100）取向。如此形成的磁隧道结在室温下享有高隧道磁阻，例如大于100％。

29. 发明申请

US20080291584A1 Magnetic Tunnel Junctions Including Crystalline and Amorphous Tunnel Barrier Materials 失效
标题翻译：磁隧道结包括结晶和非晶隧道阻挡材料
公开(公告)号：US20080291584A1
公开(公告)日：2008-11-27
申请号：US12146286
申请日：2008-06-25
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/06 , G11B5/3903 , G11C11/16 , H01L43/08
摘要： Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al2O3, which may be amorphous. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., greater than 100% at room temperature.
摘要翻译：公开了包括铁磁（或亚铁磁）材料和双层隧道势垒结构的磁隧道结。双层包括结晶材料，例如MgO或Mg-ZnO，Al 2 O 3可以是无定形的。如果使用MgO，则优选（100）取向。如此形成的磁隧道结在室温下享有高隧道磁阻，例如大于100％。

30. 发明申请

US20080182342A1 Magnetic Tunnel Barriers and Associated Magnetic Tunnel Junctions with High Tunneling Magnetoresistance 有权
标题翻译：具有高隧道磁阻的磁隧道势垒和相关磁隧道结
公开(公告)号：US20080182342A1
公开(公告)日：2008-07-31
申请号：US11931110
申请日：2007-10-31
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： H01L21/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel barrier in proximity with the second magnetic layer permits spin-polarized current to pass between the tunnel barrier and the second layer; the tunnel barrier may be either MgO and Mg—ZnO. The first magnetic layer, the spacer layer, the second magnetic layer, and the tunnel barrier are all preferably (100) oriented. The MgO and Mg—ZnO tunnel barriers are prepared by first depositing a metallic layer on the second magnetic layer (e.g., a Mg layer), thereby substantially reducing the oxygen content in this magnetic layer, which improves the performance of the tunnel barriers.
摘要翻译：磁隧道器件由第一体心立方（bcc）磁性层和第二bcc磁性层形成。这些磁性层之间的至少一个bcc材料间隔层交换耦合第一和第二bcc磁性层。靠近第二磁性层的隧道势垒允许自旋极化电流在隧道势垒和第二层之间通过; 隧道势垒可以是MgO和Mg-ZnO。第一磁性层，间隔层，第二磁性层和隧道势垒都优选为（100）取向。通过首先在第二磁性层（例如，Mg层）上沉积金属层来制备MgO和Mg-ZnO隧道势垒，从而大大降低该磁性层中的氧含量，这改善了隧道势垒的性能。

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