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21. 发明申请

US20110157884A1 OPTOELECTRONIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20110157884A1
公开(公告)日：2011-06-30
申请号：US12981788
申请日：2010-12-30
申请人： Chao-Hsing Chen , Alexander Chan Wang , Chia-Ling Hsu
发明人： Chao-Hsing Chen , Alexander Chan Wang , Chia-Ling Hsu
IPC分类号： F21V9/00 , F21S4/00
CPC分类号： H05B33/0821 , H01L24/04 , H01L24/48 , H01L25/0753 , H01L27/15 , H01L33/0066 , H01L33/0079 , H01L33/62 , H01L2224/04042 , H01L2224/48139 , H01L2224/48157 , H01L2224/48465 , H01L2224/4848 , H01L2924/00014 , H01L2224/45099
摘要： A light-emitting device includes an insulating carrier; a light-emitting array formed on the insulating carrier including a first light-emitting circuit having a first light-emitting unit, wherein the first light-emitting circuit is a one-way circuit, a second light-emitting circuit having a second light-emitting unit, wherein the second light-emitting circuit is a one-way circuit, a first conductive layer, a second conductive layer, and a third conductive layer, wherein the first light-emitting circuit is formed between the first conductive layer and the second conductive layer and connects with them electrically, the second light-emitting circuit is formed between the second conductive layer and the third conductive layer and connects with them electrically, wherein an area of the second conductive layer is greater or equal to 1.9×103 μm2.
摘要翻译：发光装置包括绝缘载体; 形成在绝缘载体上的发光阵列，包括具有第一发光单元的第一发光电路，其中所述第一发光电路是单向电路，第二发光电路具有第二发光单元，发光单元，其中第二发光电路是单向电路，第一导电层，第二导电层和第三导电层，其中第一发光电路形成在第一导电层和第二导电层之间导电层并与它们电连接，第二发光电路形成在第二导电层和第三导电层之间并与它们电连接，其中第二导电层的面积大于或等于1.9×10 3μm2。

22. 发明授权

US09484493B2 Rectifying unit, a light emitting diode device, and the combination thereof 有权
标题翻译：整流单元，发光二极管装置及其组合
公开(公告)号：US09484493B2
公开(公告)日：2016-11-01
申请号：US13280929
申请日：2011-10-25
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： H05B37/00 , H01L33/08 , H01L33/38 , H05B33/08
CPC分类号： H01L33/08 , H01L33/38 , H05B33/0803
摘要： A light emitting diode device includes a substrate; a first conducting terminal and a second conducting terminal receiving the alternative current signal; a first and a third light-emitting diode groups disposed on the substrate including a plurality of light emitting diodes electrically connecting with the first conducting terminal and the second conducting terminal and emitting light during the positive half power cycle; a second and the third light-emitting diode groups disposed on the substrate including a plurality of light emitting diodes electrically connecting with the first conducting terminal and the second conducting terminal and emitting light during the negative half power cycle; wherein one light emitting diode in the first light-emitting diode group includes more than three conductive connecting points to electrically connect to the second light-emitting diode group and the third light-emitting diode group.
摘要翻译：发光二极管装置包括：基板; 接收所述替代电流信号的第一导电端子和第二导电端子; 设置在所述基板上的第一和第三发光二极管组，包括与所述第一导电端子和所述第二导电端子电连接并在所述正半功率周期期间发光的多个发光二极管; 设置在所述基板上的第二发光二极管组和所述第三发光二极管组，所述第二发光二极管组包括与所述第一导电端子和所述第二导电端子电连接并在所述负半周期期间发光的多个发光二极管; 其中，所述第一发光二极管组中的一个发光二极管包括多于三个的导电连接点，以电连接到所述第二发光二极管组和所述第三发光二极管组。

23. 发明授权

US08957429B2 Light emitting diode with wavelength conversion layer 有权
标题翻译：具有波长转换层的发光二极管
公开(公告)号：US08957429B2
公开(公告)日：2015-02-17
申请号：US13367781
申请日：2012-02-07
申请人： Chih-Ming Wang , Chao-Hsing Chen , Chien-Fu Shen
发明人： Chih-Ming Wang , Chao-Hsing Chen , Chien-Fu Shen
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L33/505 , H01L24/96 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A light-emitting device comprises a base, a light-emitting unit comprising a semiconductor stack disposed on the base, and a wavelength conversion layer covering the light-emitting unit, wherein the wavelength conversion layer does not physically contact the base.
摘要翻译：发光装置包括基底，包括设置在基底上的半导体叠层的发光单元和覆盖发光单元的波长转换层，其中波长转换层不与基底物理接触。

24. 发明申请

US20130337591A1 LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20130337591A1
公开(公告)日：2013-12-19
申请号：US13527139
申请日：2012-06-19
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/486 , H01L33/48 , H01L33/483 , H01L33/501 , H01L33/505 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/73265 , H01L2924/12044 , H01L2933/0058 , H01L2933/0066 , H01L2924/00014 , H01L2924/00
摘要： A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier on the first optical element; and forming a conductive structure under the first optical element.

25. 发明申请

US20130200398A1 LIGHT EMITTING DIODE WITH WAVELENGTH CONVERSION LAYER 有权
标题翻译：具有波长转换层的发光二极管
公开(公告)号：US20130200398A1
公开(公告)日：2013-08-08
申请号：US13367781
申请日：2012-02-07
申请人： Chih-Ming Wang , Chao-Hsing Chen , Chien-Fu Shen
发明人： Chih-Ming Wang , Chao-Hsing Chen , Chien-Fu Shen
IPC分类号： H01L33/50 , H01L33/08
CPC分类号： H01L33/505 , H01L24/96 , H01L2924/12041 , H01L2933/0041 , H01L2924/00
摘要： A light-emitting device comprises a base, a light-emitting unit comprising a semiconductor stack disposed on the base, and a wavelength conversion layer covering the light-emitting unit, wherein the wavelength conversion layer does not physically contact the base.
摘要翻译：发光装置包括基底，包括设置在基底上的半导体叠层的发光单元和覆盖发光单元的波长转换层，其中波长转换层不与基底物理接触。

26. 外观设计

USD687396S1 Light-emitting diode array 有权
公开(公告)号：USD687396S1
公开(公告)日：2013-08-06
申请号：US29431404
申请日：2012-09-06
申请人： Chao-Hsing Chen , Chien-Fu Shen , Tsun-Kai Ko , Yi-Wen Ku
设计人： Chao-Hsing Chen , Chien-Fu Shen , Tsun-Kai Ko , Yi-Wen Ku

27. 发明申请

US20110241057A1 HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：高效发光装置及其制造方法
公开(公告)号：US20110241057A1
公开(公告)日：2011-10-06
申请号：US13161835
申请日：2011-06-16
申请人： Chien-Fu SHEN , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人： Chien-Fu SHEN , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
IPC分类号： H01L33/58 , H01L33/00
CPC分类号： H01L33/10 , H01L33/22
摘要： A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.
摘要翻译：发光装置包括：基板; 形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层在所述有源层和所述第一焊盘之间包括多个空隙。

28. 发明授权

US08421095B2 Light-emitting diode array 有权
标题翻译：发光二极管阵列
公开(公告)号：US08421095B2
公开(公告)日：2013-04-16
申请号：US13341414
申请日：2011-12-30
申请人： Chao-Hsing Chen
发明人： Chao-Hsing Chen
IPC分类号： H01L29/06 , H01L27/15 , H01L29/18 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/44 , H01L2924/0002 , H01L2933/0066 , H01L2924/00
摘要： A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
摘要翻译：一种制造发光二极管阵列的方法，包括：提供临时衬底; 在所述临时衬底上形成第一发光层和第二发光层; 形成覆盖所述第一发光叠层的部分的第一绝缘层; 在所述第一绝缘层上形成电线并电连接到所述第一发光堆叠和所述第二发光堆叠; 形成完全覆盖第一发光层的第二绝缘层，第二发光层的导线和部分; 在所述第二绝缘层上形成金属连接层，并电连接到所述第二发光堆叠; 在所述金属连接层上形成导电基板; 去除临时衬底; 以及形成连接到第一发光叠层的第一电极。

29. 发明授权

US09012948B2 Light-emitting element having a plurality of contact parts 有权
标题翻译：具有多个接触部的发光元件
公开(公告)号：US09012948B2
公开(公告)日：2015-04-21
申请号：US13175698
申请日：2011-07-01
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
IPC分类号： H01L33/46 , H01L33/08 , H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译：发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。

30. 发明授权

US08994052B2 High-efficiency light-emitting device and manufacturing method thereof 有权
标题翻译：高效发光元件及其制造方法
公开(公告)号：US08994052B2
公开(公告)日：2015-03-31
申请号：US13161835
申请日：2011-06-16
申请人： Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人： Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
IPC分类号： H01L33/00 , H01L33/58 , H01L33/10 , H01L33/22
CPC分类号： H01L33/10 , H01L33/22
摘要： A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.
摘要翻译：发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为从与第一半导体层相对的第二半导体层的顶表面提取。

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