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    • 21. 发明申请
    • Liquid for liquid lens with high reliability
    • 液体透镜具有高可靠性
    • US20070040146A1
    • 2007-02-22
    • US11505811
    • 2006-08-18
    • Jae BaeHee ChoiHa JungJong Kim
    • Jae BaeHee ChoiHa JungJong Kim
    • H01G9/02
    • G02B1/06G02B3/14G02B26/005
    • Disclosed herein are a liquid for a liquid lens and a liquid lens module. The liquid for a liquid lens comprises an electrolyte solution and an insulating solution wherein the electrolyte solution contains H2O, 1,2-propanediol and LiCl, and the insulating solution is a silicon (Si) oil and optionally contains 1,6-dibromohexane or bromobenzene as an organic additive. The liquid lens module comprises a transparent cover, a case for accommodating an electrolyte solution and an insulating solution, a pair of electrodes for supplying electricity to the electrolyte solution, and an insulating film for covering one of the electrodes in contact with the electrolyte solution wherein the electrolyte solution contains H2O, 1,2-propanediol and LiCl, and the insulating solution is a silicon (Si) oil. The electrolyte solution and the insulating solution used in the liquid for a liquid lens satisfy the requirements for liquid lenses. In addition, the liquid for a liquid lens ensures superior low- and high-temperature reliability. Therefore, the liquid for a liquid lens is suitable for commercialization.
    • 这里公开了液体透镜和液体透镜模块的液体。 用于液体透镜的液体包括电解质溶液和绝缘溶液,其中电解质溶液含有H 2 O,1,2-丙二醇和LiCl,并且绝缘溶液是硅(Si)油, 任选地含有1,6-二溴己烷或溴苯作为有机添加剂。 液体透镜模块包括透明盖,用于容纳电解质溶液的壳体和绝缘溶液,用于向电解质溶液供电的一对电极和用于覆盖与电解质溶液接触的一个电极的绝缘膜,其中 电解质溶液含有H 2 O,1,2-丙二醇和LiCl,绝缘溶液是硅(Si)油。 用于液体透镜的液体中的电解质溶液和绝缘溶液满足液体透镜的要求。 此外,用于液体透镜的液体确保了优异的低温和高温可靠性。 因此,用于液体透镜的液体适于商业化。
    • 26. 发明申请
    • MOS transistor and fabrication method thereof
    • MOS晶体管及其制造方法
    • US20060276017A1
    • 2006-12-07
    • US11446040
    • 2006-05-30
    • Jong Kim
    • Jong Kim
    • H01L21/28
    • H01L21/28123H01L29/6659
    • Disclosed is a method for fabricating a MOS transistor. The present method includes the steps of: (a) forming a gate electrode including a gate insulating layer and a polysilicon gate conductive layer on an active region in a semiconductor substrate; (b) forming a metal layer over the substrate including the gate electrode; (c) heat-treating the substrate to form a polycide layer on a top surface and sidewalls of the gate electrode; (d) removing an unreacted portion of the metal layer; (e) removing the polycide layer from the top surface and sidewalls of the gate electrode, thus reducing a width of the gate electrode; and (f) forming source and drain regions in the active region adjacent to the gate electrode.
    • 公开了一种用于制造MOS晶体管的方法。 本方法包括以下步骤:(a)在半导体衬底的有源区上形成包括栅极绝缘层和多晶硅栅极导电层的栅电极; (b)在包括所述栅电极的所述基板上形成金属层; (c)对所述基板进行热处理以在所述栅电极的顶表面和侧壁上形成多晶硅化物层; (d)去除金属层的未反应部分; (e)从栅电极的顶表面和侧壁去除多晶硅化物层,从而减小栅电极的宽度; 和(f)在与栅电极相邻的有源区中形成源区和漏区。