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21. 发明申请

US20120309198A1 USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH 有权
标题翻译：在ETCH期间使用与燃气切换同步射频切换的频谱
公开(公告)号：US20120309198A1
公开(公告)日：2012-12-06
申请号：US13154075
申请日：2011-06-06
申请人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
发明人： Qing Xu , Camelia Rusu , Brian K. McMillin , Alexander M. Paterson
IPC分类号： H01L21/302 , H01L21/3065 , C23F1/08
CPC分类号： H01L21/30655 , H01J37/32972
摘要： A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层中的方法。提供了一种光学定时沉积阶段，包括提供沉积相气体流，检测等离子体处理室内的沉积气体的存在，提供用于从等离子体处理室中的沉积相气体形成等离子体的RF能量，并停止流动的沉积气体进入等离子体处理室。提供光学定时的蚀刻阶段，包括提供蚀刻气体流，检测等离子体处理室内的蚀刻气体的存在，提供用于从等离子体处理室中的蚀刻气体形成等离子体的RF能量，并停止蚀刻气体流入等离子体处理室。

22. 发明授权

US07341953B2 Mask profile control for controlling feature profile 有权
标题翻译：用于控制特征轮廓的掩模轮廓控制
公开(公告)号：US07341953B2
公开(公告)日：2008-03-11
申请号：US11406485
申请日：2006-04-17
申请人： Camelia Rusu
发明人： Camelia Rusu
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/31122 , H01L21/31138 , H01L21/76802
摘要： A method for etching features into a dielectric layer over a substrate and existent below a polymeric hard mask is provided. The substrate is placed in a plasma processing chamber. Mask features are etched into the polymeric hard mask and necks are formed inadvertently. A plasma treatment process performed before the dielectric etch step process can selectively etch away the necks. As a result, neckless features are created into the polymeric hardmask. Features etched into the underneath dielectric layer through the neckless polymeric hard mask have straight profiles.
摘要翻译：提供了一种用于将特征蚀刻到基底上的介电层并存在于聚合物硬掩模下方的方法。将基板放置在等离子体处理室中。掩模特征被蚀刻到聚合物硬掩模中，并且无意中形成颈部。在电介质蚀刻步骤处理之前执行的等离子体处理工艺可以选择性地蚀刻掉颈部。因此，无缝特征产生在聚合物硬掩模中。通过无颈聚合物硬掩模蚀刻到下面介电层的特征具有直的轮廓。

23. 发明授权

US08609548B2 Method for providing high etch rate 有权
标题翻译：提供高蚀刻速率的方法
公开(公告)号：US08609548B2
公开(公告)日：2013-12-17
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理房间。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

24. 发明申请

US20130203256A1 CONTROLLED GAS MIXING FOR SMOOTH SIDEWALL RAPID ALTERNATING ETCH PROCESS 有权
标题翻译：控制的气体混合中光滑侧墙快速交替蚀刻工艺
公开(公告)号：US20130203256A1
公开(公告)日：2013-08-08
申请号：US13369125
申请日：2012-02-08
申请人： Qing Xu , William Thie , Camelia Rusu
发明人： Qing Xu , William Thie , Camelia Rusu
IPC分类号： H01L21/302
CPC分类号： H01L21/30655 , H01L21/32137
摘要： A method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a net deposition on the silicon layer, and stopping the flow of the deposition gas. A silicon etch phase is provided, comprising providing a silicon etch gas into the plasma processing chamber that is different than the deposition gas, forming the silicon etch gas into a plasma to etch the silicon layer, and stopping the flow of the silicon etch gas.
摘要翻译：提供了一种用于在置于掩模下面在等离子体处理室中的多个周期的硅层中蚀刻特征的方法。沉积阶段形成在等离子体处理室中的硅层上的沉积提供了一种包括提供沉积气体进入所述等离子体处理室，其中该沉积气体包括含有蚀刻剂组分和碳氟化合物的沉积成分的卤素，在形成沉积气体形成等离子体，它提供了在硅层上的净沉积，以及停止该沉积气体流。甲硅蚀刻阶段提供，其包括：提供硅蚀刻气体流入该等离子体处理室比所述沉积气体不同，在形成硅蚀刻气体形成等离子体来蚀刻硅层，以及停止该硅蚀刻气体的流动。

25. 发明申请

US20130115776A1 PRESSURE CONTROL VALVE ASSEMBLY OF PLASMA PROCESSING CHAMBER AND RAPID ALTERNATING PROCESS 有权
标题翻译：等离子体加工室的压力控制阀组件和快速交替过程
公开(公告)号：US20130115776A1
公开(公告)日：2013-05-09
申请号：US13290657
申请日：2011-11-07
申请人： Mirzafer Abatchev , Camelia Rusu , Brian McMillin
发明人： Mirzafer Abatchev , Camelia Rusu , Brian McMillin
IPC分类号： H01L21/3065 , H01L21/30 , F16K17/00
CPC分类号： F16K3/0209 , H01J37/32816 , H01J37/32834 , H01L21/30655 , Y10T137/7837
摘要： A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during rapid alternating phases of processing a semiconductor substrate in the chamber. A fixed slotted valve plate having a first set of parallel slots therein is fixed in the conduit such that gasses withdrawn from the chamber into the conduit pass through the first set of parallel slots. A movable slotted valve plate having a second set of parallel slots therein is movable with respect to the fixed slotted valve plate so as to adjust pressure in the chamber.
摘要翻译：其中处理半导体衬底的等离子体处理室的压力控制阀组件包括具有入口，出口和在入口和出口之间延伸的导管的壳体，入口适于连接到等离子体处理室的内部并且所述出口适于连接到真空泵，所述真空泵在处理所述室中的半导体衬底的快速交替阶段期间将所述等离子体处理室维持在期望的压力设定点。在其中具有第一组平行槽的固定开槽阀板固定在管道中，使得从腔室排出到管道中的气体通过第一组平行槽。其中具有第二组平行槽的可移动开槽阀板可相对于固定开槽阀板移动，以调节腔室中的压力。

26. 发明申请

US20120309194A1 METHOD FOR PROVIDING HIGH ETCH RATE 有权
标题翻译：提供高刻蚀速率的方法
公开(公告)号：US20120309194A1
公开(公告)日：2012-12-06
申请号：US13188174
申请日：2011-07-21
申请人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
发明人： Qing Xu , Camelia Rusu , Jaroslaw W. Winniczek , Frank Y. Lin , Alan J. Miller
IPC分类号： H01L21/3065
CPC分类号： H01L21/30655 , H01J37/32082 , H01J37/32449 , H01L21/76802 , H01L21/76898
摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.
摘要翻译：提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。每个循环包括沉积阶段和蚀刻阶段。沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理房间。蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动的蚀刻气体进入等离子体处理室。

27. 发明授权

US07785753B2 Method and apparatus for providing mask in semiconductor processing 有权
标题翻译：用于在半导体处理中提供掩模的方法和装置
公开(公告)号：US07785753B2
公开(公告)日：2010-08-31
申请号：US11383835
申请日：2006-05-17
申请人： Yoojin Kim , Camelia Rusu , Jonathan Kim
发明人： Yoojin Kim , Camelia Rusu , Jonathan Kim
IPC分类号： G03F1/00
CPC分类号： H01L21/31144 , H01J37/32082 , H01J2237/3342 , H01L21/0273 , H01L21/31122 , H01L21/32139
摘要： Disclosed is a method for processing a two layer mask for use in fabrication of semiconductor devices whereby the critical dimension (CD) of a semiconductor device being fabricated with the mask can be controlled. After forming a carbon mask layer and a silicon containing photoresist layer on the carbon mask, a two-step process forms openings in the carbon mask layer, as required for subsequent device fabrication. The structure is placed in a plasma processing chamber, and an oxygen plasma is employed to partially etch the carbon layer. The oxygen plasma reacts with silicon in the photoresist to form a hard silicon oxide layer on the surface of the photoresist. A hydrogen plasma is then employed to complete the etch through the carbon layer with a reduced critical dimension. Damage to the silicon containing photoresist layer is kept to a minimum during the plasma etch process by limiting the low frequency RF power.
摘要翻译：公开了一种用于制造半导体器件的双层掩模的处理方法，由此可以控制用掩模制造的半导体器件的临界尺寸（CD）。在碳掩模上形成碳掩模层和含硅光致抗蚀剂层之后，根据随后的器件制造的需要，两步法在碳掩模层中形成开口。将该结构放置在等离子体处理室中，并且使用氧等离子体来部分蚀刻碳层。氧等离子体与光致抗蚀剂中的硅反应，在光致抗蚀剂的表面上形成硬的氧化硅层。然后使用氢等离子体来完成通过具有减小的临界尺寸的碳层的蚀刻。通过限制低频RF功率，在等离子体蚀刻工艺期间，使含硅光致抗蚀剂层的损伤保持最小。

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