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21. 发明授权

US08697486B2 Methods of forming phase change materials and methods of forming phase change memory circuitry 有权
公开(公告)号：US08697486B2
公开(公告)日：2014-04-15
申请号：US12424404
申请日：2009-04-15
申请人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
发明人： Eugene P. Marsh , Timothy A. Quick , Stefan Uhlenbrock
IPC分类号： H01L21/06
CPC分类号： H01L45/144 , C23C16/28 , C23C16/305 , C23C16/45523 , H01L45/06 , H01L45/1233 , H01L45/1616 , H01L45/1683
摘要： A method of forming a phase change material which having germanium and tellurium therein includes depositing a germanium-containing material over a substrate. Such material includes elemental-form germanium. A gaseous tellurium-comprising precursor is flowed to the germanium-comprising material and tellurium is removed from the gaseous precursor to react with the elemental-form germanium in the germanium-comprising material to form a germanium and tellurium-comprising compound of a phase change material over the substrate. Other implementations are disclosed.

22. 发明授权

US08481361B2 Methods of depositing antimony-comprising phase change material onto a substrate and methods of forming phase change memory circuitry 有权
标题翻译：将含锑相变材料沉积到基板上的方法以及形成相变存储器电路的方法
公开(公告)号：US08481361B2
公开(公告)日：2013-07-09
申请号：US13478460
申请日：2012-05-23
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： H01L21/06 , H01L21/20
CPC分类号： H01L45/1616 , C23C14/30 , C23C16/305 , H01L45/06 , H01L45/144 , H01L45/148
摘要： A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR)3 to a substrate, where R is alkyl, and forming there-from antimony-comprising phase change material on the substrate. The phase change material has no greater than 10 atomic percent oxygen, and includes another metal in addition to antimony.
摘要翻译：将包含锑的相变材料沉积到衬底上的方法包括向衬底提供还原剂和蒸发的Sb（OR）3，其中R是烷基，并且在衬底上形成来自含锑相变材料的衬底。相变材料的氧含量不大于10原子％，除了锑之外，还包含另外的金属。

23. 发明授权

US08455296B2 Semiconductor processing 有权
标题翻译：半导体处理
公开(公告)号：US08455296B2
公开(公告)日：2013-06-04
申请号：US13190879
申请日：2011-07-26
申请人： Eugene P. Marsh , Timothy A. Quick
发明人： Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1683
摘要： Devices, methods, and systems for semiconductor processing are described herein. A number of method embodiments of semiconductor processing can include forming a silicon layer on a structure, forming an opening through the silicon layer and into the structure, and selectively forming a resistance variable material in the opening such that the resistance variable material does not form on the silicon layer.
摘要翻译：本文描述了用于半导体处理的装置，方法和系统。半导体处理的多个方法实施例可以包括在结构上形成硅层，通过硅层形成开口并进入结构，并且在开口中选择性地形成电阻可变材料，使得电阻变化材料不形成硅层。

24. 发明授权

US08298938B2 Phase change memory cell structures and methods 有权
公开(公告)号：US08298938B2
公开(公告)日：2012-10-30
申请号：US13342172
申请日：2012-01-02
申请人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
发明人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
IPC分类号： H01L21/44
CPC分类号： H01L45/1683 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144
摘要： Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.

25. 发明授权

US08163341B2 Methods of forming metal-containing structures, and methods of forming germanium-containing structures 有权
公开(公告)号：US08163341B2
公开(公告)日：2012-04-24
申请号：US12273737
申请日：2008-11-19
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： C23C16/00 , C23C16/06 , C23C16/18
CPC分类号： C23C16/45527 , C23C16/45534
摘要： Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.

26. 发明申请

US20110291065A1 PHASE CHANGE MEMORY CELL STRUCTURES AND METHODS 有权
标题翻译：相变存储器单元结构和方法
公开(公告)号：US20110291065A1
公开(公告)日：2011-12-01
申请号：US12787070
申请日：2010-05-25
申请人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
发明人： Timothy A. Quick , Eugene P. Marsh , Joseph N. Greeley
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/1683 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1293 , H01L45/144
摘要： Phase change memory cell structures and methods are described herein. A number of methods of forming a phase change memory cell structure include forming a dielectric stack structure on a first electrode, wherein forming the dielectric stack structure includes creating a second region between a first region and a third region of the dielectric stack structure, the second region having a thermal conductivity different than a thermal conductivity of the first region and different than a thermal conductivity of the third region of the dielectric stack. One or more embodiments include forming a via through the first, second, and third regions of the dielectric stack structure, depositing a phase change material in the via, and forming a second electrode on the phase change material.
摘要翻译：本文描述了相变存储器单元结构和方法。形成相变存储单元结构的多种方法包括在第一电极上形成电介质堆叠结构，其中形成电介质叠层结构包括在电介质叠层结构的第一区和第三区之间形成第二区，第二区域，其热导率不同于第一区域的热导率，并且不同于介电叠层的第三区域的热导率。一个或多个实施例包括通过介电堆叠结构的第一，第二和第三区域形成通孔，在通孔中沉积相变材料，以及在相变材料上形成第二电极。

27. 发明申请

US20110291064A1 RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS 有权
标题翻译：电阻可变存储器单元结构和方法
公开(公告)号：US20110291064A1
公开(公告)日：2011-12-01
申请号：US12787018
申请日：2010-05-25
申请人： Eugene P. Marsh , Timothy A. Quick
发明人： Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L45/00 , H01L21/20
CPC分类号： H01L45/1608 , H01L27/101 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/124 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/146 , H01L45/148 , H01L45/1616 , H01L45/1691
摘要： Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.
摘要翻译：本文描述了电阻变量存储单元结构和方法。一个或多个电阻可变存储单元结构包括与第一和第二电阻可变存储单元共用的第一电极，第一垂直取向的电阻变化材料，其具有与第二电极接触的弓形顶表面和非弧形底表面与第一电极接触; 以及第二垂直取向的电阻变化材料，其具有与第三电极接触的弓形顶表面和与第一电极接触的非弧形底表面。

28. 发明授权

US08003521B2 Semiconductor processing 有权
标题翻译：半导体处理
公开(公告)号：US08003521B2
公开(公告)日：2011-08-23
申请号：US12419779
申请日：2009-04-07
申请人： Eugene P. Marsh , Timothy A. Quick
发明人： Eugene P. Marsh , Timothy A. Quick
IPC分类号： H01L21/4763
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/148 , H01L45/1616 , H01L45/1683
摘要： Devices, methods, and systems for semiconductor processing are described herein. A number of method embodiments of semiconductor processing can include forming a silicon layer on a structure, forming an opening through the silicon layer and into the structure, and selectively forming a resistance variable material in the opening such that the resistance variable material does not form on the silicon layer.
摘要翻译：本文描述了用于半导体处理的装置，方法和系统。半导体处理的多个方法实施例可以包括在结构上形成硅层，通过硅层形成开口并进入结构，并且在开口中选择性地形成电阻可变材料，使得电阻变化材料不形成硅层。

29. 发明申请

US20100124609A1 Methods Of Forming Metal-Containing Structures, And Methods Of Forming Germanium-Containing Structures 有权
标题翻译：形成含金属结构的方法以及形成含锗结构的方法
公开(公告)号：US20100124609A1
公开(公告)日：2010-05-20
申请号：US12273737
申请日：2008-11-19
申请人： Timothy A. Quick , Eugene P. Marsh
发明人： Timothy A. Quick , Eugene P. Marsh
IPC分类号： C23C16/00
CPC分类号： C23C16/45527 , C23C16/45534
摘要： Some embodiments include methods of forming metal-containing structures. A first metal-containing material may be formed over a substrate. After the first metal-containing material is formed, and while the substrate is within a reaction chamber, hydrogen-containing reactant may be used to form a hydrogen-containing layer over the first metal-containing material. The hydrogen-containing reactant may be, for example, formic acid and/or formaldehyde. Any unreacted hydrogen-containing reactant may be purged from within the reaction chamber, and then metal-containing precursor may be flowed into the reaction chamber. The hydrogen-containing layer may be used during conversion of the metal-containing precursor into a second metal-containing material that forms directly against the first metal-containing material. Some embodiments include methods of forming germanium-containing structures, such as, for example, methods of forming phase change materials containing germanium, antimony and tellurium.
摘要翻译：一些实施方案包括形成含金属结构的方法。可以在衬底上形成第一含金属材料。在形成第一含金属材料之后，当基板在反应室内时，可以使用含氢反应物在第一含金属材料上形成含氢层。含氢反应物可以是例如甲酸和/或甲醛。可以从反应室内清除任何未反应的含氢反应物，然后含金属的前体可以流入反应室。含氢层可以在将含金属的前体转化成直接形成第一含金属材料的第二含金属材料中使用。一些实施方案包括形成含锗结构的方法，例如形成含有锗，锑和碲的相变材料的方法。

30. 发明授权

US08252119B2 Microelectronic substrate cleaning systems with polyelectrolyte and associated methods 失效
标题翻译：具有聚电解质和相关方法的微电子基板清洗系统
公开(公告)号：US08252119B2
公开(公告)日：2012-08-28
申请号：US12195003
申请日：2008-08-20
申请人： Joseph N. Greeley , Nishant Sinha , Lukasz Hupka , Timothy A. Quick , Prashant Raghu
发明人： Joseph N. Greeley , Nishant Sinha , Lukasz Hupka , Timothy A. Quick , Prashant Raghu
IPC分类号： B08B3/08
CPC分类号： B08B3/08 , C11D3/37 , C11D7/06 , C11D11/0047 , H01L21/02057 , H01L21/67051 , H01L21/67057
摘要： Several embodiments of cleaning systems using polyelectrolyte and various associated methods for cleaning microelectronic substrates are disclosed herein. One embodiment is directed to a system that has a substrate support for holding the microelectronic substrate, a dispenser positioned above the substrate support and facing a surface of the microelectronic substrate, a reservoir in fluid communication with the dispenser via a conduit, and a washing solution contained in the reservoir. The washing solution includes a polyelectrolyte.
摘要翻译：本文公开了使用聚电解质的清洁系统和用于清洁微电子衬底的各种相关方法的几个实施例。一个实施例涉及一种具有用于保持微电子基板的基板支撑件的系统，位于基板支撑件上方并面向微电子基板的表面的分配器，经由导管与分配器流体连通的储存器和洗涤液储存在容器中。洗涤液包括聚电解质。

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