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21. 外观设计

USD596214S1 Digital camera 有权
公开(公告)号：USD596214S1
公开(公告)日：2009-07-14
申请号：US29310174
申请日：2008-07-30
申请人： Tae-hwan Kim , Eun-kyung Lee
设计人： Tae-hwan Kim , Eun-kyung Lee

22. 外观设计

USD571844S1 Digital camera 有权
公开(公告)号：USD571844S1
公开(公告)日：2008-06-24
申请号：US29285668
申请日：2007-04-05
申请人： Eun-kyung Lee , Seung-seup Yoo , Sung-hwa Chang
设计人： Eun-kyung Lee , Seung-seup Yoo , Sung-hwa Chang

23. 发明授权

US07276298B2 Substance for intermediate layer of organic electroluminescent device and organic electroluminescent device using the same 有权
标题翻译：有机电致发光器件的中间层的物质和使用其的有机电致发光器件
公开(公告)号：US07276298B2
公开(公告)日：2007-10-02
申请号：US10998821
申请日：2004-11-30
申请人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
发明人： Soo-hyoung Lee , Yi-yeol Lyu , Eun-kyung Lee , Tae-yong Noh
IPC分类号： H01L51/54 , C09K11/06 , H05B33/12
CPC分类号： H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0059 , H01L51/006 , H01L51/5096 , H01L2251/308 , Y10S428/917
摘要： The present invention is related to an intermediate layer of an organic electroluminescent device comprising an amine derivative substance which may further comprise a functional group capable of forming crosslinks. In particular, the substance may have excellent solubility and can be easily formed into a thin film. Specifically, the thin film may be stable in the solvent and can be easily formed to various thicknesses. Furthermore, the band gaps and LUMO/HOMO values may be easily controlled depending of the characteristics of the hole transporting material, so that an intermediate layer with the desired characteristics may be formed. Accordingly, the introduction of an intermediate layer manufactured using the substance of the present invention as the intermediate layer may result in an organic electroluminescent device having high efficiency and a longer lifespan.
摘要翻译：本发明涉及包含胺衍生物物质的有机电致发光器件的中间层，其可以进一步包含能够形成交联的官能团。特别地，该物质可以具有优异的溶解性并且可以容易地形成为薄膜。具体地说，薄膜在溶剂中可以是稳定的，并且可以容易地形成为各种厚度。此外，可以根据空穴传输材料的特性容易地控制带隙和LUMO / HOMO值，从而可以形成具有期望特性的中间层。因此，引入使用本发明的物质制造的中间层作为中间层可以产生具有高效率和更长寿命的有机电致发光器件。

24. 发明申请

US20070020950A1 Silicon nano wires, semiconductor device including the same, and method of manufacturing the silicon nano wires 有权
标题翻译：硅纳米线，包括其的半导体器件以及硅纳米线的制造方法
公开(公告)号：US20070020950A1
公开(公告)日：2007-01-25
申请号：US11362897
申请日：2006-02-27
申请人： Byoung-lyong Choi , Wan-jun Park , Eun-kyung Lee , Jea-woong Hyun
发明人： Byoung-lyong Choi , Wan-jun Park , Eun-kyung Lee , Jea-woong Hyun
IPC分类号： H01L21/31
CPC分类号： B82Y10/00 , H01L21/02381 , H01L21/02532 , H01L21/02603 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/861
摘要： A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer and a surface of the silicon substrate, forming a metal layer on the silicon substrate, forming catalysts by heating the metal layer within the microgrooves of the silicon substrate and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：一种制造硅纳米线的方法，包括在硅衬底的表面上形成微槽，在硅衬底上形成掺杂有第一掺杂剂的第一掺杂层，并在第一掺杂层和第一掺杂层之间形成掺杂有第二掺杂剂的第二掺杂层在硅衬底上形成金属层，通过加热硅衬底的微槽内的金属层并使用热处理在催化剂和硅衬底之间生长纳米线，形成催化剂。

25. 发明申请

US20060269745A1 Nano wires and method of manufacturing the same 审中-公开
标题翻译：纳米线和制造方法相同
公开(公告)号：US20060269745A1
公开(公告)日：2006-11-30
申请号：US11362046
申请日：2006-02-27
申请人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
发明人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
IPC分类号： D02G3/00
CPC分类号： H01L21/0273 , H01L21/26533 , H01L21/31654 , H01L21/76243 , H01L33/20 , Y10T428/2913
摘要： The present invention provides a method of manufacturing nano wires and nano wires having a p-n junction structure. The method includes: stacking a mask layer on a substrate; patterning the mask layer into stripes; and performing an oxygen ion injection process on the substrate and the mask layer to form oxygen ion injection regions in the substrate, thereby forming nano wire regions embedded in the substrate and separated from the substrate by the oxygen ion injection regions.
摘要翻译：本发明提供一种制造具有p-n结结构的纳米线和纳米线的方法。该方法包括：在基板上层叠掩模层; 将掩模层图案化成条纹; 在基板和掩模层上进行氧离子注入处理，在基板上形成氧离子注入区域，由此形成嵌入到基板内的纳米线区域，并通过氧离子注入区域与基板分离。

26. 发明申请

US20060182966A1 Silicon nano wire having a silicon-nitride shell and method of manufacturing the same 审中-公开
标题翻译：具有氮化硅壳的硅纳米线及其制造方法
公开(公告)号：US20060182966A1
公开(公告)日：2006-08-17
申请号：US11349250
申请日：2006-02-08
申请人： Eun-kyung Lee , Byoung-Iyong Choi
发明人： Eun-kyung Lee , Byoung-Iyong Choi
IPC分类号： D02G3/00
CPC分类号： C30B29/06 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/60 , Y10T428/2933
摘要： Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.
摘要翻译：提供了具有氮化硅壳的硅纳米线及其制造方法。每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

27. 发明授权

US07012239B2 Silicon optoelectronic device and image input/output device using the silicon optoelectronic device 有权
标题翻译：硅光电器件和图像输入/输出器件采用硅光电器件
公开(公告)号：US07012239B2
公开(公告)日：2006-03-14
申请号：US10716665
申请日：2003-11-20
申请人： Jun-young Kim , Byoung-Iyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-Iyong Choi , Eun-kyung Lee
IPC分类号： H01L31/00
CPC分类号： H01L31/125 , H01L31/173
摘要： A silicon optoelectronic device includes an optoelectronic device portion and a switching portion. The switching portion selectively controls the emission and detection of light by the optoelectronic device portion. The optoelectronic device portion includes: a doped region of the opposite type to an n- or p-type silicon-based substrate, in which emission and detection of light occurs due to quantum confinement effect at the p-n junction between the doped region and the substrate, and at least one semiconductor material region formed on the rear surface of the substrate, at least a portion of which forms a stack structure with the doped region so that a built-in transistor is formed. The silicon optoelectronic device allows selective light emission and detection without any external amplifying and switching circuits, easy control the duration of light emission and detection, and can be manufactured in a series of semiconductor fabrication process.
摘要翻译：硅光电子器件包括光电器件部分和开关部分。开关部分选择性地控制由光电子器件部分发出的光的发射和检测。光电子器件部分包括：与n型或p型硅基衬底相反类型的掺杂区域，其中由于在掺杂区域和衬底之间的pn结处的量子限制效应而发生光的发射和检测以及形成在所述衬底的后表面上的至少一个半导体材料区域，其至少一部分与所述掺杂区域形成堆叠结构，从而形成内置晶体管。硅光电子器件允许选择性发光和检测，而无需任何外部放大和开关电路，便于控制发光和检测的持续时间，并且可以在一系列半导体制造工艺中制造。

28. 发明授权

US06885040B2 Wavelength-selective photo detector 有权
标题翻译：波长选择性光电探测器
公开(公告)号：US06885040B2
公开(公告)日：2005-04-26
申请号：US10747439
申请日：2003-12-30
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L31/107 , G01J1/02 , H01L27/14 , H01L31/00 , H01L31/0328 , H01L35/24
CPC分类号： H01L31/107
摘要： A wavelength-selective photo detector device includes a transparent upper electrode including a capacitor, a first semiconductor layer disposed under the upper electrode, an optical absorption layer disposed under the first semiconductor layer for absorbing light to form pairs of electrons and holes, an amplification layer disposed under the optical absorption layer for generating secondary electrons, a second semiconductor layer disposed under the amplification layer, and a lower electrode disposed under the second semiconductor layer and including an inductance coupled in parallel with an external resistance. The photo detector improves the S/N ratio and filters only light having a particular wavelength band.
摘要翻译：一种波长选择性光电检测器件包括：透明上电极，包括电容器，设置在上电极下方的第一半导体层，设置在第一半导体层下方以吸收光以形成电子和空穴对的光吸收层;放大层设置在用于产生二次电子的光吸收层下方，设置在放大层下的第二半导体层，以及设置在第二半导体层下方并包括与外部电阻并联耦合的电感的下电极。光检测器提高了S / N比，并且仅滤光具有特定波长带的光。

29. 发明授权

US06787810B2 Image input/output device for displaying an image on a single panel 有权
标题翻译：用于在单个面板上显示图像的图像输入/输出设备
公开(公告)号：US06787810B2
公开(公告)日：2004-09-07
申请号：US10367786
申请日：2003-02-19
申请人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
发明人： Byoung-lyong Choi , Eun-kyung Lee , Jun-young Kim
IPC分类号： H01L31072
CPC分类号： H01L27/156 , H01L33/34
摘要： Provided is an image input/output device including a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. The silicon light device includes a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. Each of the plurality of silicon light devices includes a doping region on one surface of the substrate, so that the silicon light device is used as a light-emitting device and light-receiving device, the doping region being doped to an ultra-shallow depth with a predetermined dopant of the opposite type to the substrate.
摘要翻译：提供了一种图像输入/输出装置，其包括由用于输入和/或输出图像的两维或多维阵列中布置在n型或p型硅基衬底上的多个硅光器件组成的硅光器件面板。硅光器件包括由用于输入和/或输出图像的两维或多维阵列中布置在n型或p型硅基衬底上的多个硅光器件组成的硅光器件面板。多个硅光器件中的每一个在衬底的一个表面上包括掺杂区域，使得硅光器件用作发光器件和光接收器件，掺杂区被掺杂到超浅深度具有与衬底相反类型的预定掺杂剂。

30. 发明授权

US06740904B2 Silicon light-emitting device and display apparatus employing the same 有权
标题翻译：硅发光器件及其应用的显示装置
公开(公告)号：US06740904B2
公开(公告)日：2004-05-25
申请号：US10294549
申请日：2002-11-15
申请人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-lyong Choi , Eun-kyung Lee
IPC分类号： H01L2715
CPC分类号： H01L33/34 , H01L27/15
摘要： A silicon light-emitting device and a display device employing the silicon light-emitting device are provided. In the silicon light-emitting device, a doped region is ultra-shallowly doped with the opposite type dopant to the type of the substrate on one side of the substrate, so that the p-n junction between the doped region itself and the substrate creates luminance by annihilation combination of electron-hole pairs due to the quantum confinement effect. At least one semiconductor material portion at least partially forms a stack along with the doped region on the other side of the substrate. First, second, and third electrodes are formed for electric connection. The silicon light-emitting device includes a transistor of at least one step and accordingly performs current amplification and/or switching. Thus, luminance can be driven just with a small amount of current. In addition, when an array of silicon light-emitting devices is adopted in a display device, the turn-on and turn-off durations for used current can be controlled on a pixel-by-pixel basis. Therefore, the luminance duration can be easily controlled.
摘要翻译：提供硅发光器件和采用硅发光器件的显示器件。在硅发光器件中，掺杂区域在衬底的一侧上与衬底类型相反的掺杂剂超浅掺杂，使得掺杂区域本身和衬底之间的pn结通过由于量子限制效应，电子 - 空穴对的湮灭组合。至少一个半导体材料部分至少部分地与衬底的另一侧上的掺杂区域一起形成堆叠。形成第一，第二和第三电极用于电连接。硅发光器件包括至少一个级的晶体管，因此执行电流放大和/或切换。因此，可以仅用少量的电流来驱动亮度。此外，当在显示装置中采用硅发光器件阵列时，可以逐个像素地控制使用电流的导通和关断持续时间。因此，可以容易地控制亮度持续时间。

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