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21. 发明申请

US20070023156A1 Press belt and shoe press roll 有权
标题翻译：压榨皮带和鞋压榨辊
公开(公告)号：US20070023156A1
公开(公告)日：2007-02-01
申请号：US10571228
申请日：2004-09-01
申请人： Takahisa Hikita , Atsuo Watanabe
发明人： Takahisa Hikita , Atsuo Watanabe
IPC分类号： D21F3/00 , B32B3/00 , B32B5/02 , B32B27/12
CPC分类号： D21F3/0218 , D21F3/0227 , Y10S162/901 , Y10T428/24479 , Y10T428/2457 , Y10T442/2369 , Y10T442/3854
摘要： A press belt (2) comprises both-end corresponding regions B positioned so as to correspond to both ends of a press roll (1) or a press shoe (3) in a width direction and having a small thickness and a center region A positioned between the both-end corresponding regions B and having a thickness larger than that of the both-end corresponding region B.
摘要翻译：压榨带（2）包括两端对应的区域B，其定位成对应于压榨辊（1）或压板（3）在宽度方向上的两端，并且具有小的厚度，并且中心区域A定位在两端对应区域B之间，其厚度大于两端对应区域B的厚度。

22. 发明申请

US20060191658A1 Papermaking belt and method of manufacturing papermaking belt 有权
标题翻译：造纸带及造纸带生产方法
公开(公告)号：US20060191658A1
公开(公告)日：2006-08-31
申请号：US11416213
申请日：2006-05-03
申请人： Atsuo Watanabe , Takahisa Hikida , Atsushi Watanabe
发明人： Atsuo Watanabe , Takahisa Hikida , Atsushi Watanabe
IPC分类号： D03D15/00 , D21F3/00
CPC分类号： D21F3/0227 , C08G18/10 , C08G18/3808 , C08G18/3868 , C08G18/4854 , D21F3/0236 , Y10S162/901 , Y10T428/2457 , Y10T442/2041 , Y10T442/2066 , Y10T442/2098 , Y10T442/30 , C08G18/3814 , C08G18/6685
摘要： A papermaking belt, used for a shoe pressing belt, a calender belt and a sheet transfer belt, is prevented from cracking and inhibited from growth of a crack, and comprises a reinforcing substrate (6) embedded in a thermosetting polyurethane layer (7) so that the said reinforcing substrate (6) and the said thermosetting polyurethane layer (7) are integrated with each other and the outer peripheral surface and the inner peripheral surface of the belt are formed by polyurethane layers, the polyurethane layer forming the outer peripheral surface is made of a composition containing a urethane prepolymer having isocyanate groups on ends and a hardener containing dimethylthiotoluenediamine.
摘要翻译：防止用于靴式压榨带，砑光带和片材转移带的造纸带被破裂并被抑制裂纹生长，并且包括嵌入热固性聚氨酯层（7）中的增强基材（6）所述增强基板（6）和所述热固性聚氨酯层（7）彼此成一体，并且所述带的外周面和内周面由聚氨酯层形成，形成外周面的聚氨酯层为由含有端部具有异氰酸酯基的氨基甲酸酯预聚物和含有二甲基硫代甲苯二胺的固化剂的组合物制成。

23. 发明申请

US20060071217A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060071217A1
公开(公告)日：2006-04-06
申请号：US11206271
申请日：2005-08-18
申请人： Takasumi Ohyanagi , Atsuo Watanabe , Toshio Sakakibara , Tsuyoshi Yamamoto , Hiroki Nakamura
发明人： Takasumi Ohyanagi , Atsuo Watanabe , Toshio Sakakibara , Tsuyoshi Yamamoto , Hiroki Nakamura
IPC分类号： H01L31/0312
CPC分类号： H01L21/823487 , H01L29/7722
摘要： A semiconductor device includes a vertical field-effect transistor having a substrate of first conduction type in a substrate base, a drain electrode formed on a first surface of the substrate, an epitaxial layer of first conduction type formed on a second surface of the substrate, a source region of first conduction type formed on the semiconductor base, a source ohmic contact metal film in ohmic contact with the source region, trenches formed from the second surface of the semiconductor base, and a gate region of second conduction type formed along the trenches. The semiconductor device further includes a gate rise metal film in ohmic contact with the draw-out layer of the gate region on the bottom of the trenches and rising to the second surface of the semiconductor base, and a gate draw-out metal film connected to the gate rise metal film from the second surface of the semiconductor base.
摘要翻译：半导体器件包括：垂直场效应晶体管，其具有在基板基底中的第一导电类型的衬底;形成在衬底的第一表面上的漏电极，形成在衬底的第二表面上的第一导电类型的外延层; 在半导体基底上形成的第一导电类型的源极区域，与源极区欧姆接触的源欧姆接触金属膜，从半导体基底的第二表面形成的沟槽和沿着沟槽形成的第二导电类型的栅极区域。半导体器件还包括与沟槽底部的栅极区域的引出层欧姆接触并上升到半导体基底的第二表面的栅极上升金属膜，以及连接到来自半导体基底的第二表面的栅极上升金属膜。

24. 发明授权

US06977522B1 Interface device and information processing system 失效
标题翻译：接口设备和信息处理系统
公开(公告)号：US06977522B1
公开(公告)日：2005-12-20
申请号：US10149763
申请日：1999-12-15
申请人： Fumio Murabayashi , Takashi Sase , Mutsumi Kikuchi , Atsuo Watanabe , Masatsugu Amishiro , Kenji Tabuchi
发明人： Fumio Murabayashi , Takashi Sase , Mutsumi Kikuchi , Atsuo Watanabe , Masatsugu Amishiro , Kenji Tabuchi
IPC分类号： G05B19/042 , G06F3/00 , H01L21/762 , H01L27/06 , H03K19/0175
CPC分类号： H01L21/76283 , G05B19/0428 , G05B2219/25428 , G05B2219/25462 , H01L27/0629 , H04L25/0266
摘要： A first converter circuit converts a state signal, whose level is constant or slowly varies during a predetermine period of time, into a pulse signal to allow the signal to propagate across an electrically insulating area. A second converter circuit converts the pulse signal, which has propagated through an insulating circuit, into the original state signal or a signal having the same characteristics as the original state signal.
摘要翻译：第一转换器电路将预定时间段内的电平恒定或缓慢变化的状态信号转换成脉冲信号，以允许信号通过电绝缘区域传播。第二转换器电路将已经通过绝缘电路传播的脉冲信号转换成原始状态信号或具有与原始状态信号相同特性的信号。

25. 发明授权

US06892582B1 Semiconductor pressure sensor and pressure sensing device 失效
标题翻译：半导体压力传感器和压力传感装置
公开(公告)号：US06892582B1
公开(公告)日：2005-05-17
申请号：US09936480
申请日：1999-08-20
申请人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
发明人： Shinya Satou , Satoshi Shimada , Atsuo Watanabe , Yasuo Onose , Seiji Kuryu , Atsushi Miyazaki , Junichi Horie , Naohiro Momma
IPC分类号： B81B3/00 , B81B7/00 , G01L7/08 , G01L9/00 , H01L21/00
CPC分类号： B81C1/00333 , B81B2201/0264 , B81B2203/0127 , B81C1/00293 , B81C2203/0145 , G01L9/0042 , G01L9/0073
摘要： The object of the present invention is to propose an etch channel sealing structure characterized by excellent impermeability to moisture and resistance to temporal change of the diaphragm in the pressure sensor produced according to the sacrificial layer etching technique, and to provide a pressure sensor characterized by excellent productivity and durability. After a very small gap is formed by the sacrificial layer etching technique, silicon oxide film is deposited by the CVD technique or the like, thereby sealing the etch channel. Further, impermeable thin film of polysilicon or the like is formed to cover the oxide film.This allows an etch channel sealing structure to be simplified in the pressure sensor produced according to the sacrificial layer etching technique, and prevents entry of moisture into the cavity, thereby improving moisture resistance. Moreover, sealing material with small film stress reduces temporal deformation of the diaphragm.
摘要翻译：本发明的目的是提出一种蚀刻通道密封结构，其特征在于对根据牺牲层蚀刻技术制造的压力传感器中的防潮性和抗隔膜的时间变化具有优异的防渗性，并且提供一种特征在于优异的压力传感器生产力和耐久性。在通过牺牲层蚀刻技术形成非常小的间隙之后，通过CVD技术等沉积氧化硅膜，从而密封蚀刻通道。此外，形成多晶硅等的不渗透性薄膜以覆盖氧化物膜。这允许在根据牺牲层蚀刻技术产生的压力传感器中简化蚀刻通道密封结构，并且防止水分进入空腔，从而改善耐湿性。此外，具有小膜应力的密封材料减小了隔膜的时间变形。

26. 发明申请

US20050015988A1 Fiber-reinforced resin roll and method of manufacturing the roll 审中-公开
标题翻译：纤维增强树脂辊及其制造方法
公开(公告)号：US20050015988A1
公开(公告)日：2005-01-27
申请号：US10499999
申请日：2002-12-19
申请人： Tetsuya Murakami , Atsuo Watanabe
发明人： Tetsuya Murakami , Atsuo Watanabe
IPC分类号： B29C53/58 , B29C53/60 , B29C53/80 , B29C53/84 , B29C63/10 , B29C70/32 , D21F3/08 , F16C13/00 , B25F5/02
CPC分类号： B29C53/60 , B29C53/582 , B29C53/8066 , B29C53/845 , B29C63/10 , B29C70/32 , B29K2105/0854 , D21F3/08 , F16C13/00 , Y10T29/49551
摘要： A fiber-reinforced resin roll (1) comprises a roll core (2) and a covering layer (4) formed around a periphery of the roll core (2) through an under winding layer (3) interposed therebetween. The covering layer (4) contains a fiber material (6) mainly composed of inorganic fibers. The fiber material (6) is uniformly dispersed in the covering layer (4). The covering layer (4) is formed by impregnating a tape-shaped nonwoven fiber complex in which the fiber material (6) is coupled by a binder, with a liquid thermosetting resin material and winding the impregnated fiber complex around the under winding layer (3).
摘要翻译：纤维增强树脂辊（1）包括辊芯（2）和覆盖层（4），所述覆盖层（4）通过介于其间的下绕组层（3）围绕所述辊芯（2）的周边形成。覆盖层（4）包含主要由无机纤维构成的纤维材料（6）。纤维材料（6）均匀地分散在覆盖层（4）中。覆盖层（4）通过浸渍纤维材料（6）通过粘合剂与液体热固性树脂材料结合的带状非织造纤维复合体而形成，并将浸渍的纤维复合物缠绕在下绕组层（3））。

27. 发明授权

US06570240B1 Semiconductor device having a lateral bipolar transistor and method of manufacturing same 失效
标题翻译：具有横向双极晶体管的半导体器件及其制造方法
公开(公告)号：US06570240B1
公开(公告)日：2003-05-27
申请号：US09649616
申请日：2000-08-29
申请人： Takasumi Ohyanagi , Atsuo Watanabe
发明人： Takasumi Ohyanagi , Atsuo Watanabe
IPC分类号： H01L2900
CPC分类号： H01L29/66265 , H01L21/84 , H01L29/7317
摘要： In order to form a semiconductor device including a lateral bipolar transistor which is a match in the device performance for a vertical bipolar transistor, an electrically conductive film which is formed by filling a trench reaching a buried oxide film in an SOI substrate with an electrically conductive film is utilized for an emitter and/or a collector, whereby a bipolar transistor is formed through a simple process.
摘要翻译：为了形成包括横向双极晶体管的半导体器件，其在垂直双极晶体管的器件性能上是匹配的，导电膜是通过在导电的SOI衬底中填充到达掩埋氧化膜的沟槽而形成的，膜用于发射极和/或集电极，由此通过简单的工艺形成双极晶体管。

28. 发明授权

US06498368B2 Power semiconductor device 失效
标题翻译：功率半导体器件
公开(公告)号：US06498368B2
公开(公告)日：2002-12-24
申请号：US09733098
申请日：2000-12-11
申请人： Kozo Sakamoto , Yosuke Inoue , Akihiro Miyauchi , Masaki Shiraishi , Mutsuhiro Mori , Atsuo Watanabe , Takasumi Ohyanagi
发明人： Kozo Sakamoto , Yosuke Inoue , Akihiro Miyauchi , Masaki Shiraishi , Mutsuhiro Mori , Atsuo Watanabe , Takasumi Ohyanagi
IPC分类号： H01L31119
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/4236 , H01L29/4238 , H01L29/66727 , H01L29/66734 , H01L29/732 , H01L29/7397 , H01L29/7722 , H01L29/7811 , H01L29/872
摘要： In a semiconductor device having a first terminal 101 (source terminal) and a second terminal 102 (drain terminal), the substrate main surface of a semiconductor chip is on the (110) face, the main contact face of an n-type region 2 and a p-type region 4 is the {111} face perpendicular to the (110) face, elongated n-type regions 2 and elongated p-type regions 4, which are arranged alternately, form a voltage holding area. The first terminal 101 is connected to the p-type regions through wiring, and the second terminal 102 is connected to the n-type regions 2. Also, the p-type region is formed to cover the bottom comers of a gate polycrystalline silicon layer 8.
摘要翻译：在具有第一端子101（源极端子）和第二端子102（漏极端子）的半导体器件中，半导体芯片的基板主表面在（110）面上，n型区域2的主接触面并且p型区域4是垂直于（110）面的{111}面，交替布置的细长n型区域2和细长p型区域4形成电压保持区域。第一端子101通过布线连接到p型区域，并且第二端子102连接到n型区域2.而且，形成p型区域以覆盖栅极多晶硅层的底部角 8。

29. 发明授权

US6167140A AV Amplifier 失效
标题翻译： AV放大器
公开(公告)号：US6167140A
公开(公告)日：2000-12-26
申请号：US36689
申请日：1998-03-09
申请人： Atsuo Watanabe
发明人： Atsuo Watanabe
IPC分类号： H04R5/04 , H04S3/00 , H02B1/00 , H04R5/00
CPC分类号： H03F3/68 , H03F2200/03 , H03F2200/321 , H04R5/04 , H04R2420/03 , H04S3/00
摘要： When a first bi-wiring speaker is connected to output terminals 5A and 5B and a second bi-wiring speaker is connected to output terminals 5D and 5E, and further a two-channel stereo reproduction is performed, a signal 3L for a L channel outputted from a decoder 2 is amplified by amplifiers 4A and 4B in parallel to be given to the first bi-wiring speaker in a bi-wiring connecting manner and a signal 3R for a R channel outputted from the decoder 2 is amplified by amplifiers 4C and 4D in parallel and given to the second bi-wiring speaker in a bi-wiring connecting manner. At this time, a gain corrector 7 equalizes a gain which an output signal of the amplifier 4A has with respect to the signal 3L for the L channel with a gain which an output signal of the amplifier 4B has with respect to the signal 3L for the L channel. Similarly, a gain corrector 8 equalizes a gain which an output signal of the amplifier 4C has with respect to the signal 3R for the R channel with a gain which an output signal of the amplifier 4D has with respect to the signal 3R for the R channel.
摘要翻译：当第一双线扬声器连接到输出端子5A和5B，并且第二双线扬声器连接到输出端子5D和5E，并且进一步进行双声道立体声再现时，输出用于L声道的信号3L 解码器2由放大器4A和4B并联放大，以双线连接方式被提供给第一双线扬声器，并且从解码器2输出的用于R通道的信号3R被放大器4C和4D放大并联并以双线连接方式给予第二双线扬声器。此时，增益校正器7使放大器4A的输出信号相对于L通道的信号3L的增益与放大器4B的输出信号相对于信号3L的增益相等， L通道。类似地，增益校正器8使放大器4C的输出信号相对于R沟道的信号3R的增益与放大器4D的输出信号相对于R沟道的信号3R具有的增益相等。

30. 发明授权

US5507899A Method of manufacturing an endless belt for a dewatering press 失效
标题翻译：脱水机的环带的制造方法
公开(公告)号：US5507899A
公开(公告)日：1996-04-16
申请号：US272307
申请日：1994-07-08
申请人： Atsuo Watanabe , Kenjiro Nakayama , Takahisa Hikida
发明人： Atsuo Watanabe , Kenjiro Nakayama , Takahisa Hikida
IPC分类号： B29D29/00 , B29D23/24 , B29K75/00 , B29K105/08 , B30B9/24 , B32B27/04 , D21F3/00 , D21F3/02 , B32B31/02 , B32B31/08 , B32B31/12
CPC分类号： D21F3/0227 , B29D29/00 , D21F3/0236 , B29L2031/733 , Y10S162/901 , Y10T156/1082 , Y10T428/131 , Y10T428/1314 , Y10T428/1317 , Y10T428/1321 , Y10T428/1334 , Y10T428/1338 , Y10T428/1352 , Y10T428/1355 , Y10T428/1359 , Y10T428/1369 , Y10T428/1372 , Y10T428/1386 , Y10T428/1397 , Y10T428/24091 , Y10T428/24132
摘要： An endless belt in which a fibrous material is dispersed in a substantially uniform manner all over an endless elastic body layer is provided. A non-woven tape is impregnated with a polyurethane elastomer material liquid and wound and layered on a supporting belt, and then, after curing the polyurethane elastomer material liquid to form an elastic body, it is removed from supporting belt.
摘要翻译：提供了一种环状带，其中纤维材料以大致均匀的方式分布在整个无尽的弹性体层上。用聚氨酯弹性体材料液浸渍无纺布，将其缠绕并层叠在支撑带上，然后在固化聚氨酯弹性体材料液体以形成弹性体之后，将其从支撑带上移除。

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