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21. 发明授权

US5110711A Method for forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US5110711A
公开(公告)日：1992-05-05
申请号：US683729
申请日：1991-04-11
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
IPC分类号： G03F7/027 , G03F7/029 , G03F7/075
CPC分类号： G03F7/029 , G03F7/027 , G03F7/0755 , G03F7/0757
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
摘要翻译：一种紫外光敏感性光引发剂组合物，其包含至少一种由下式表示的蒽衍生物：其中X为CH = CH 2或 - （ - CH 2 - ） - n O - （ - R），其中R为H或其中每个R 1，R II和R III分别选自烷基，烯基，芳基，＆lt; IMAGE＆gt;其中每个RIV，RV和RVI分别选自烷基，烯基和芳基; 其中m为0〜4的整数，p为0〜4的整数。 n为1〜2; 和盐; 和有机溶剂。该组合物用于阳离子可聚合材料的阳离子聚合，包括形成光致抗蚀剂图案。还提供了一些对辐射敏感的环氧官能化有机硅氧烷，包括电子束辐射，并表现出对氧反应离子蚀刻的抗性。

22. 发明授权

US5098816A Method for forming a pattern of a photoresist 失效
标题翻译：形成光致抗蚀剂图案的方法
公开(公告)号：US5098816A
公开(公告)日：1992-03-24
申请号：US683778
申请日：1991-04-11
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
IPC分类号： G03F7/027 , G03F7/029 , G03F7/075
CPC分类号： G03F7/027 , G03F7/029 , G03F7/0755 , G03F7/0757
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.
摘要翻译：一种紫外光敏感性光引发剂组合物，其包含至少一种由下式表示的蒽衍生物：其中X为CH = CH 2或 - （ - CH 2 - ） - n O - （ - R），其中R为H或其中每个R 1，R II和R III分别选自烷基，烯基，芳基，＆lt; IMAGE＆gt;其中每个RIV，RV和RVI分别选自烷基，烯基和芳基; 其中m为0〜4的整数，p为0〜4的整数。 n为1〜2; 和盐; 和有机溶剂。该组合物用于阳离子可聚合材料的阳离子聚合，包括形成光致抗蚀剂图案。还提供了一些对辐射敏感的环氧官能化有机硅氧烷，包括电子束辐射，并表现出对氧反应离子蚀刻的抗性。

23. 发明授权

US5059512A Ultraviolet light sensitive photoinitiator compositions, use thereof and radiation sensitive compositions 失效
标题翻译：超紫外线敏感光敏组合物，其使用和辐射敏感组合物
公开(公告)号：US5059512A
公开(公告)日：1991-10-22
申请号：US419047
申请日：1989-10-10
申请人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
发明人： Edward D. Babich , Jeffrey D. Gelorme , Michael Hatzakis , Jane M. Shaw , Kevin J. Stewart , David F. Witman
IPC分类号： G03F7/031 , C08F2/50 , C08G59/68 , C08G77/14 , C08G77/22 , C08G85/00 , C08L83/04 , C08L83/06 , G03F7/027 , G03F7/029 , G03F7/075
CPC分类号： G03F7/0755 , G03F7/027 , G03F7/029 , G03F7/0757 , Y10S430/127 , Y10S502/522
摘要： An ultraviolet light sensitive photoinitiator composition that includes at least one anthracene derivative represented by the formula: ##STR1## wherein X is CH.dbd.CH.sub.2 or --(--CH.sub.2 --)--.sub.n O--(--R) with R being H or ##STR2## wherein each R.sup.I, R.sup.II and R.sup.III individually is selected from the group of alkyl, alkenyl, aryl, ##STR3## wherein each R.sup.IV, R.sup.V and R.sup.VI individually is selected from the group of alkyl, alkenyl and aryl; wherein m is an integer of 0 to 4, p is an integer of 0 to 4; and is n being 1 to 2; and onium salt; and an organic solvent. The composition is used for cationic polymerization of cationic polymerizable materials including in the formation of a pattern of a photoresist. Also certain novel epoxy-functionalized organosilicons are provided that are sensitive to radiation including E-beam radiation and exhibit resistance to oxygen reactive ion etching.

24. 发明授权

US6030550A Methods of fabrication of cross-linked electrically conductive polymers and precursors thereof 失效
公开(公告)号：US6030550A
公开(公告)日：2000-02-29
申请号：US594680
申请日：1996-02-02
申请人： Marie Angelopoulos , Jeffrey D. Gelorme , Yun Hsin Liao , Jane M. Shaw
发明人： Marie Angelopoulos , Jeffrey D. Gelorme , Yun Hsin Liao , Jane M. Shaw
IPC分类号： H01B1/12
CPC分类号： H01B1/128 , H01B1/125 , H01B1/127
摘要： Cross-linked electrically conductive polymers, in particular electrically conductive, polyaniline are described. Dopants and substituents having pendant cross-linkable functionality are used which form a cross-linked conducting polymer network. The cross-linking functionality can be hydrogen-bonding as well as chemically polymerizable or cross-linkable. A conjugated path between chains can also be incorporated. The resulting cross-linked conducting polymers have enhanced thermal and environmental stability. The dopant cannot readily be washed out with solvents or diffuse out upon exposure to heat. In addition, the cross-linked polymers have enhanced electrical conductivity.

25. 发明授权

US5382637A Solid state chain extension polymerization between Lewis acid oligomers and deblocked Lewis bases 失效
标题翻译：路易斯酸低聚物和解封路易斯碱之间的固态链延伸聚合
公开(公告)号：US5382637A
公开(公告)日：1995-01-17
申请号：US785734
申请日：1991-10-31
申请人： Marie Angelopoulos , Claudius Feger , Jeffrey D. Gelorme , Jane M. Shaw
发明人： Marie Angelopoulos , Claudius Feger , Jeffrey D. Gelorme , Jane M. Shaw
IPC分类号： C08G73/10 , G03F7/004 , G03F7/038 , C08L77/00 , C08L79/08
CPC分类号： C08G73/101 , G03F7/0045 , G03F7/0387
摘要： A solid state chain extension method provides for the formation of a solid state film comprised of a high molecular weight polymer by chain extending a deblocked Lewis base with Lewis acid oligomers while the reactants are in a solid state form. In one embodiment, a negative resist is prepared by selectively exposing regions of the solid state film. The Lewis base is deblocked at the exposed regions by a suitable deblocking means. The Lewis acid oligomers and the deblocked Lewis base chain extend at the exposed regions. Development of the film removes the non-polymerized reactants. Optionally, the Lewis acid oligomers, when radiation-cross-linking, are cross-linked with one another prior to deblocking the Lewis base to form a negative resist. The cross-linked oligomers polymerize with the subsequently deblocked base to provide a high molecular weight polymer film. In an alternative embodiment, a positive resist is used by degrading and removing phot-sensitive Lewis acid oligomers using selective exposure lithography techniques and, subsequently, deblocking the Lewis base and chain extending the remaining oligomers with the deblocked Lewis base at the unexposed regions.
摘要翻译：固态链延伸方法提供了通过将路易斯酸低聚物链路延伸解链路易斯碱同时反应物呈固态形式形成由高分子量聚合物构成的固态膜。在一个实施方案中，通过选择性地暴露固态膜的区域来制备负性抗蚀剂。路易斯碱通过合适的去块装置在暴露区域解封。路易斯酸低聚物和解封的路易斯碱基链在暴露的区域延伸。膜的开发除去未聚合的反应物。任选地，当辐射交联时，路易斯酸低聚物在将路易斯碱解封以形成负性抗蚀剂之前彼此交联。交联的低聚物与随后的解封底物聚合以提供高分子量聚合物膜。在替代实施方案中，通过使用选择性曝光光刻技术降解和除去光敏路易斯酸低聚物，并且随后使路易斯碱和链在未曝光区域上与解封的路易斯碱扩展剩余的低聚物，使用正性抗蚀剂。

26. 发明授权

US5258236A Multi-layer thin film structure and parallel processing method for fabricating same 失效
标题翻译：多层薄膜结构及其制造方法
公开(公告)号：US5258236A
公开(公告)日：1993-11-02
申请号：US695368
申请日：1991-05-03
申请人： Gnanalingam Arjavalingam , Alina Deutsch , Fuad E. Doany , Bruce K. Furman , Donald J. Hunt , Chandrasekhar Narayan , Modest M. Oprysko , Sampath Purushothaman , Vincent Ranieri , Stephen Renick , Jane M. Shaw , Janusz S. Wilczynski , David F. Witman
发明人： Gnanalingam Arjavalingam , Alina Deutsch , Fuad E. Doany , Bruce K. Furman , Donald J. Hunt , Chandrasekhar Narayan , Modest M. Oprysko , Sampath Purushothaman , Vincent Ranieri , Stephen Renick , Jane M. Shaw , Janusz S. Wilczynski , David F. Witman
IPC分类号： B23K26/00 , B32B37/00 , H01L21/68 , H01L23/12 , H01L23/15 , H05K3/00 , H05K3/46 , B32B15/04 , H01L29/12
CPC分类号： H01L21/6835 , H01L2221/68345 , H01L2221/68359 , H05K3/0011 , H05K3/46 , Y10T156/1158 , Y10T428/12528 , Y10T428/12549 , Y10T428/12569 , Y10T428/12611
摘要： A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.
摘要翻译：一种用于从衬底释放工件的方法和装置，包括提供对预定波长的电磁辐射是透明的衬底; 在衬底上形成响应于预定辐射而降解的分离层; 在分离层上提供工件; 并且通过透明基板将分离层处的预定辐射引导，以使分离层退化并将工件与基板分离。

27. 发明授权

US5198153A Electrically conductive polymeric 失效
标题翻译：电导电聚合物
公开(公告)号：US5198153A
公开(公告)日：1993-03-30
申请号：US357565
申请日：1989-05-26
申请人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
发明人： Marie Angelopoulos , Wu-Song Huang , Richard D. Kaplan , Marie-Annick Le Corre , Stanley E. Perreault , Jane M. Shaw , Michel R. Tissier , George F. Walker
IPC分类号： G03F7/038 , C08F38/00 , C08G61/00 , C08G61/02 , C08G61/10 , C08G61/12 , C08G73/00 , C08G75/02 , C08G75/06 , C08K3/00 , C08K5/00 , C08L79/00 , C08L81/02 , H01B1/12 , H01J29/86 , H01L21/027 , H01L21/30 , H01L23/498 , H01L23/60 , H05K1/09 , H05K9/00
CPC分类号： H05K9/0079 , C08G61/12 , H01B1/127 , H01B1/128 , H01J29/868 , H01L23/49894 , H01L23/60 , H05K9/0081 , H01L2924/0002 , Y10T428/31855
摘要： Structures containing conducting polymers and methods of fabrication thereof. Electrical conductivity can be induced in polymers selected from the group of substituted and unsubstituted polyanilines, polyparaphenylenvinyles, substituted and unsubstituted polythiophenes substituted and unsubstituted poly-p-phenylene sulfides, substituted polyfuranes, substituted polypyrroles, substituted polyselenophene, polyacetylines formed from soluble precursors, combinations thereof and blends thereof with other polymers. The polymer contains a doping precursor, selected from the group of onium salts, iodonium salts, triflate salts, borate salts and tosylate salts and sulfonoxylimides. Conductivity can be selectively induced in the polymer by selectively doping upon selective exposure to a source of energy such as electromagnetic radiation, an electron beam and heat. The electrically conductive polymers of the present invention are useful as electron discharge layers for electron beam applications, such as, SEM observations, as electromagnetic interference coatings on dielectric surfaces and as electron beam resist which acts as a discharge layer.

28. 发明授权

US5191182A Tuneable apparatus for microwave processing 失效
标题翻译：用于微波处理的调谐装置
公开(公告)号：US5191182A
公开(公告)日：1993-03-02
申请号：US799376
申请日：1991-11-27
申请人： Jeffrey D. Gelorme , David A. Lewis , Jane M. Shaw
发明人： Jeffrey D. Gelorme , David A. Lewis , Jane M. Shaw
IPC分类号： B01J19/12 , C08G73/10 , G01N22/00 , H05B6/68 , H05B6/80 , H05K1/03 , H05K3/46
CPC分类号： H05B6/705 , B01J19/126 , C08G73/1025 , G01N22/00 , H05B6/68 , B01J2219/00191 , H05K1/0346 , H05K3/4644 , Y02B40/143
摘要： Disclosed is a tuneable microwave apparatus useful in carrying out chemical and physical processes on a sample, particularly including polymerization. The apparatus includes a cavity in which the sample is disposed, a microwave supply, microwave power meter and sensor, means for sensing the temperature in the cavity, means for varying the volume of the chamber within the cavity wherein the sample is disposed, means for measuring microwave reflection from the sample, and computer-controlled means operatively associated with the foregoing to vary the microwave power and the size of the chamber. Openings are provided within the chamber to permit removal of vapor generated during expousre of the sample to the microwave radiation.
摘要翻译：公开了可用于对样品进行化学和物理过程的可调谐微波装置，特别是包括聚合。该装置包括其中设置样品的空腔，微波供应，微波功率计和传感器，用于感测空腔中的温度的装置，用于改变腔体内体积的装置，其中设置样品，测量来自样品的微波反射，以及与上述操作相关联的计算机控制装置，以改变微波功率和室的尺寸。在室内提供开口以允许将在样品暴露期间产生的蒸气除去到微波辐射。

29. 发明授权

US4908689A Organic solder barrier 失效
标题翻译：有机焊料屏障
公开(公告)号：US4908689A
公开(公告)日：1990-03-13
申请号：US213434
申请日：1988-06-27
申请人： Donald G. McBride , Jane M. Shaw
发明人： Donald G. McBride , Jane M. Shaw
IPC分类号： G03F7/075 , H01L21/60 , H05K3/34
CPC分类号： H01L24/81 , G03F7/0755 , H01L2224/81801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H05K3/3452
摘要： A system for defining a solder barrier using a silylated positive photoresist. This layer replaces the top chrome layer previously employed and defines the C4 and I/O select patterns. The personality pattern in the Cr-Cu layers is defined by the use of a positive photoresist which is etched to provide the copper etch mask. The etched copper is then used to etch the chrome. This avoids the incompatibility of the positive photoresist with the alkaline chromium etchant.
摘要翻译：一种用于使用甲硅烷基化的正性光致抗蚀剂来限定焊料阻挡层的系统。该层替代了先前使用的顶层铬层，并定义了C4和I / O选择图案。通过使用蚀刻以提供铜蚀刻掩模的正性光致抗蚀剂来限定Cr-Cu层中的个性图案。然后用蚀刻的铜蚀刻铬。这避免了正性光致抗蚀剂与碱性铬蚀刻剂的不相容性。

30. 发明授权

US4665010A Method of fabricating photopolymer isolation trenches in the surface of a semiconductor wafer 失效
标题翻译：在半导体晶片表面制造光聚合物隔离沟槽的方法
公开(公告)号：US4665010A
公开(公告)日：1987-05-12
申请号：US728633
申请日：1985-04-29
申请人： Harold H. Herd , Lawrence Jacobowitz , Jane M. Shaw
发明人： Harold H. Herd , Lawrence Jacobowitz , Jane M. Shaw
IPC分类号： H01L21/76 , H01L21/027 , H01L21/31 , H01L21/312 , H01L21/762 , G03C5/00 , B05D5/12
CPC分类号： H01L21/76224 , H01L21/312 , Y10S430/168
摘要： A method for forming dielectric filled isolation trenches in a semiconductor substrate wherein the substrate is coated with a photopolymer layer which also fills the trenches. Depending on the type of radiation used, the photopolymer layer is masked except for the regions directly above the filled trenches. The structure is exposed to radiation through the mask, which is then removed. The unexposed portions of the photopolymer layer are washed away and heat is gradually applied to shrink the remaining photopolymer into the trenches until it becomes coplanar with the semiconductor substrate surface. A mask is used if the radiation is ultraviolet light, but no mask is required if electron beam or x-radiation is employed.
摘要翻译：一种用于在半导体衬底中形成电介质填充隔离沟槽的方法，其中衬底涂覆有也填充沟槽的光聚合物层。取决于所使用的辐射类型，除了直接在填充沟槽上方的区域外，掩模光聚合物层。该结构通过掩模暴露于辐射，然后将其去除。洗去光聚合物层的未曝光部分，逐渐施加热量以将剩余的光聚合物收缩到沟槽中，直至其变得与半导体衬底表面共面。如果辐射是紫外线，则使用掩模，但如果使用电子束或x射线，则不需要掩模。

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