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21. 发明授权

US5976624A Process for producing bismuth compounds, and bismuth compounds 失效
标题翻译：铋化合物和铋化合物的制备方法
公开(公告)号：US5976624A
公开(公告)日：1999-11-02
申请号：US700030
申请日：1996-08-20
申请人： Takaaki Ami , Katsuyuki Hironaka , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Yuji Ikeda
IPC分类号： C01G29/00 , C01G33/00 , C01G35/00 , C04B35/453 , C04B35/495 , C23C14/08 , C23C16/40 , C23C16/56 , H01G4/12 , H01L21/822 , H01L27/04
CPC分类号： C01G33/006 , C01G35/006 , C04B35/453 , C04B35/495 , C23C16/40 , C23C16/56 , H01G4/1254 , C01P2002/20 , C01P2002/36 , C01P2002/72 , C01P2006/40
摘要： The formation of an electrically conductive phase in an dielectric or ferroelectric composed of a bismuth compound is inhibited. Described is a process for producing a bismuth compound, which comprises introducing a gas of starting materials in an atmosphere under a pressure of 0.01 to 50 torr, depositing a precursor of a bismuth compound on a substrate, and thermally treating it in an oxidizing atmosphere.
摘要翻译：抑制由铋化合物构成的电介质或铁电体中的导电相的形成。描述了一种铋化合物的制造方法，其包括在0.01〜50乇的压力下在气氛下引入原料气体，在基板上沉积铋化合物的前体，并在氧化气氛中进行热处理。

22. 发明授权

US5935549A Method of producing bismuth layered compound 失效
标题翻译：生产铋层状化合物的方法
公开(公告)号：US5935549A
公开(公告)日：1999-08-10
申请号：US621618
申请日：1996-03-26
申请人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
发明人： Takaaki Ami , Katsuyuki Hironaka , Chiharu Isobe , Yuji Ikeda
IPC分类号： C01G35/00 , C01G29/00 , C01F1/00
CPC分类号： C01G35/006 , C01P2002/20 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2006/40
摘要： A process is disclosed for making a bismuth layered compound, such as Bi.sub.2 SrTa.sub.2 O.sub.9, by forming mixture of Bi.sub.2 O.sub.3, Ta.sub.2 O.sub.5 and a compound selected from strontium hydroxide or strontium nitrate, grinding the mixture, shaping the ground mixture at elevated temperature and pressure to form a pellet of bismuth strontium tantalum oxide having a fluorite structure and then heating the pellet in a flow of oxygen at 800-1000.degree. C. until a single phase bismuth layered compound is obtained.
摘要翻译：公开了通过形成Bi 2 O 3，Ta 2 O 5和选自氢氧化锶或硝酸锶的化合物的混合物来制备铋层状化合物如Bi 2 SrO 2 O 9的方法，研磨该混合物，在高温和高压下成型研磨的混合物以形成颗粒的具有萤石结构的铋锶钽氧化物，然后在800-1000℃的氧气流中加热沉淀，直至获得单相铋层状化合物。

23. 发明授权

US06400489B1 Solid-state displacement element, optical element, and interference filter 有权
标题翻译：固态位移元件，光学元件和干涉滤波器
公开(公告)号：US06400489B1
公开(公告)日：2002-06-04
申请号：US09610583
申请日：2000-07-05
申请人： Masayuki Suzuki , Yuichi Ishida , Naomi Nagasawa , Takaaki Ami , Teiichiro Nishimura
发明人： Masayuki Suzuki , Yuichi Ishida , Naomi Nagasawa , Takaaki Ami , Teiichiro Nishimura
IPC分类号： B02F100
CPC分类号： G02F1/21 , G02F1/0126 , G02F1/133362 , G02F1/216
摘要： A solid-state displacement element includes an inorganic layered compound having a layered structure and an organic substance inserted between layers of the inorganic layered compound. The solid-state displacement element expands or contracts in the lamination direction of the inorganic layered compound when irradiated with controlling light. An optical element and an interference filter using the same principle of expansion or contraction as that in the solid-state displacement element are also disclosed.
摘要翻译：固态置换元件包括具有层状结构的无机层状化合物和插入无机层状化合物的层之间的有机物质。当用控制光照射时，固态位移元件在无机层状化合物的层叠方向上膨胀或收缩。还公开了使用与固态位移元件相同的膨胀或收缩原理的光学元件和干涉滤光器。

24. 发明授权

US06171871B2 Ferroelectric memory device and their manufacturing methods 失效
标题翻译：铁电存储器件及其制造方法
公开(公告)号：US06171871B2
公开(公告)日：2001-01-09
申请号：US09078678
申请日：1998-05-14
申请人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
发明人： Akio Machida , Naomi Nagasawa , Takaaki Ami , Masayuki Suzuki
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/31691 , H01L27/11507
摘要： It is intended to provide a ferroelectric that exhibits superior ferroelectricity. A ferroelectric provided is an oxide having a layered crystal structure that is composed of Bi, a first element Me, a second element R, and O. The first element Me is at least one element selected from the group consisting of Na, K, Ca, Ba, Sr, Pb, and Bi. The second element R is at least one element selected from the group consisting of Fe, Ti, Nb, Ta, and W. Ninety-eight percent or more of the entire body of the ferroelectric exhibits ferroelectricity. After an oxide having a layered crystal structure has been grown by a vapor-phase method (crystal growth step), electrodes are attached to the oxide having a layered crystal structure and a voltage is applied thereto (voltage application step). As a result, strains of crystal lattices are corrected at least partially, whereby portions that did not exhibit ferroelectricity at all or did not exhibit superior ferroelectricity due to such large strains that the symmetry of crystal lattices is lost are changed so as to exhibit superior ferroelectricity.
摘要翻译：旨在提供具有优异的铁电性的铁电体。提供的铁电体是具有由Bi，第一元素Me，第二元素R和O组成的层状晶体结构的氧化物。第一元素Me是选自Na，K，Ca ，Ba，Sr，Pb和Bi。第二元素R是选自Fe，Ti，Nb，Ta和W中的至少一种元素。铁电体全体的98％以上表现出铁电性。在通过气相法（晶体生长步骤）生长具有层状晶体结构的氧化物之后，将电极附着到具有层状晶体结构的氧化物并施加电压（电压施加步骤）。结果，至少部分地校正晶格的应变，由于由于失去晶格的对称性的这种大的应变，完全不显示铁电性的部分或者没有表现出优异的铁电性，从而表现出优异的铁电性。

25. 发明授权

US5904766A Process for preparing bismuth compounds 失效
标题翻译：铋化合物的制备方法
公开(公告)号：US5904766A
公开(公告)日：1999-05-18
申请号：US732923
申请日：1996-10-17
申请人： Takaaki Ami , Katsuyuki Hironaka , Koji Watanabe , Akio Machida
发明人： Takaaki Ami , Katsuyuki Hironaka , Koji Watanabe , Akio Machida
IPC分类号： C01G35/00 , C04B35/495 , C30B25/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , C30B1/10
CPC分类号： C04B35/495 , C30B25/02 , C30B29/22
摘要： Provided is a process for preparing a bismuth compound at a heat treatment temperature lower than conventional. A bismuth compound is prepared by the steps of heating under vacuum to form a reduced phase and heating under oxidizing environment of normal or lower pressure.
摘要翻译：提供了在比常规低的热处理温度下制备铋化合物的方法。通过在真空下加热以形成还原相并在正常或低压的氧化环境下加热的步骤制备铋化合物。

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