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    • 22. 发明授权
    • Power inverter with overload protection apparatus
    • 电力变频器带过载保护装置
    • US4527214A
    • 1985-07-02
    • US481150
    • 1983-04-01
    • Motonobu HattoriAkira IshibashiHiromi IshidaKenji Nandoh
    • Motonobu HattoriAkira IshibashiHiromi IshidaKenji Nandoh
    • H02H7/085H02H3/093H02H7/08H02M1/36H02M5/45H02H7/122H02H5/04
    • H02M1/36H02H3/0935H02M5/4505
    • A power inverter including a converter unit for rectifying AC power into DC power, an inverter for inverting the DC power into AC power for driving a load apparatus, and a protection apparatus for protecting the load apparatus from being overloaded. The load protecting apparatus comprises current detecting means for detecting a current supplied to the inverter unit from the converter unit, a memory for storing a thermally limited operation time characteristic determined in consideration of cooling effect proper to the load apparatus, and an abnormality detecting circuit for producing an abnormality signal to stop the operation of the inverter unit when an accumulated value calculated on the basis of the current value detected by the current detector at a predetermined sampling interval exceeds the characteristic value previously stored in the memory. The load apparatus can be positively protected from overload notwithstanding variations in the output voltage and the output frequency of the power inverter.
    • 一种电力逆变器,包括用于将交流电转换成直流电力的转换器单元,用于将直流电转换成用于驱动负载装置的交流电力的逆变器,以及用于保护负载装置不被过载的保护装置。 负载保护装置包括电流检测装置,用于检测从转换器单元提供给逆变器单元的电流;存储器,用于存储考虑到适用于负载装置的冷却效果确定的热限制运行时间特性;以及异常检测电路, 产生异常信号以在基于由电流检测器检测的当前值以预定采样间隔计算的累加值超过预先存储在存储器中的特征值时停止逆变器单元的操作。 尽管输出电压和功率逆变器的输出频率有变化,负载装置也可以得到积极的保护,避免过载。
    • 25. 发明授权
    • Plating method
    • 电镀方法
    • US08257574B2
    • 2012-09-04
    • US12398818
    • 2009-03-05
    • Hitoshi MuramatsuSeiya KuniokaNobuyuki SuzukiAkira IshibashiMinoru ImaiManabu SuzukiMasahiro Ogawa
    • Hitoshi MuramatsuSeiya KuniokaNobuyuki SuzukiAkira IshibashiMinoru ImaiManabu SuzukiMasahiro Ogawa
    • C25D5/02
    • C25D7/04C25D17/004
    • A plating method for pre-plating or plating a cylinder inner peripheral surface to be treated of a cylinder block by introducing treatment liquid to the cylinder inner peripheral surface by using a plating apparatus provided with a sealing jig having a sealing member and an electrode to which the seal jig is mounted includes the steps, which are performed successively: sealing the cylinder inner peripheral surface by bringing the sealing jig into contact with the cylinder inner peripheral surface; introducing the treatment liquid to the cylinder inner peripheral surface; and treating the cylinder inner peripheral surface by applying predetermined charge to the electrode of the plating apparatus and the cylinder block to thereby perform pre-plating or plating process in a state that a liquid to be treated fills a space including the cylinder inner peripheral surface. In the method, the treatment liquid introducing step is performed after confirmation of sealing by the sealing step.
    • 一种电镀方法,用于通过使用具有密封构件和电极的电镀装置将处理液引入到缸体内周面来对汽缸体进行处理的汽缸内周面进行电镀或电镀, 安装密封夹具包括依次执行的步骤:通过使密封夹具与气缸内周面接触来密封气缸内周面; 将处理液引入气缸内周面; 以及通过向镀覆设备和气缸体的电极施加预定的电荷来处理气缸内周面,从而在待处理的液体填充包括气缸内周面的空间的状态下进行预镀或电镀处理。 在该方法中,在通过密封步骤确认密封之后进行处理液引入步骤。
    • 27. 发明授权
    • Optical switch and display unit
    • 光开关和显示单元
    • US07068875B2
    • 2006-06-27
    • US11105207
    • 2005-04-13
    • Atsushi TodaHirotaka AkaoAkira Ishibashi
    • Atsushi TodaHirotaka AkaoAkira Ishibashi
    • G02B6/35
    • G02F1/133615G02B6/3504G02B6/3548G02B6/3588G02F1/1326G02F1/141G02F2203/026Y10S385/901
    • The present invention provides an optical switch for making part of incident light, which has been made incident on an optical waveguide, selectively emergent to a light emergence portion provided outside the optical waveguide. The optical switch includes a liquid crystal device for selective emergence of the incident light. An arbitrary layer of the liquid crystal device is set such that letting Δn be a difference between a refractive index no of the optical waveguide and a refractive index n1 of the arbitrary layer of the liquid crystal device, “d” be a thickness of the arbitrary layer, and λ be a wavelength of the incident light, the values of Δn, “d”, and λ satisfy a condition of 2.20×10−3≦|Δn·d·λ−1|≦3.03×10−3. With this optical switch, the uniformity of a light emergence efficiency can be easily realized by making use of a small change region in which the light emergence efficiency is not largely varied. The present invention also provides a display unit using the optical switches.
    • 本发明提供了一种用于使入射到光波导上的入射光的一部分的光开关选择性地出射到设置在光波导外部的光出射部分。 光开关包括用于选择性地出射入射光的液晶装置。 液晶装置的任意层被设定为使得Deltan是光波导的折射率n 0和任意的折射率n <1的折射率之间的差 液晶装置的层,“d”为任意层的厚度,λ为入射光的波长,Deltan,“d”和λ的值满足2.20×10 -3的条件 <= | Deltan.d.lambda | <= 3.03×10 -3。 利用该光学开关,通过利用光出射效率没有很大变化的小变化区域,可以容易地实现光出射效率的均匀性。 本发明还提供一种使用光开关的显示单元。
    • 29. 发明授权
    • Optical switch and display unit
    • 光开关和显示单元
    • US06754408B2
    • 2004-06-22
    • US10044461
    • 2001-10-23
    • Atsushi TodaHirotaka AkaoAkira Ishibashi
    • Atsushi TodaHirotaka AkaoAkira Ishibashi
    • G02B635
    • G02F1/133615G02B6/3504G02B6/3548G02B6/3588G02F1/1326G02F1/141G02F2203/026Y10S385/901
    • The present invention provides an optical switch for making part of incident light, which has been made incident on an optical waveguide, selectively emergent to a light emergence portion provided outside the optical waveguide. The optical switch includes a liquid crystal device for selective emergence of the incident light. An arbitrary layer of the liquid crystal device is set such that letting &Dgr;n be a difference between a refractive index n0 of the optical waveguide and a refractive index n1 of the arbitrary layer of the liquid crystal device, “d” be a thickness of the arbitrary layer, and &lgr; be a wavelength of the incident light, the values of &Dgr;n, “d”, and &lgr; satisfy a condition of 2.20×10−3≦|&Dgr;n·d·&lgr;−1|≦3.03×10−3. With this optical switch, the uniformity of a light emergence efficiency can be easily realized by making use of a small change region in which the light emergence efficiency is not largely varied. The present invention also provides a display unit using the optical switches.
    • 本发明提供了一种用于使入射到光波导上的入射光的一部分的光开关选择性地出射到设置在光波导外部的光出射部分。 光开关包括用于选择性地出射入射光的液晶装置。 液晶装置的任意层被设定为使Deltan为光波导的折射率n0与液晶装置的任意层的折射率n1之差,“d”为任意的厚度 层和λ是入射光的波长,Deltan,“d”和λ的值满足条件为2.20×10 -3 <= |Deltan.d.λ1 || = 3.03×10 <-3>。 利用该光学开关,通过利用光出射效率没有很大变化的小变化区域,可以容易地实现光出射效率的均匀性。 本发明还提供一种使用光开关的显示单元。
    • 30. 再颁专利
    • Semiconductor laser
    • USRE38339E1
    • 2003-12-02
    • US09590647
    • 2000-06-08
    • Masakazu UkitaAkira Ishibashi
    • Masakazu UkitaAkira Ishibashi
    • H01S532
    • B82Y20/00H01S5/0224H01S5/024H01S5/028H01S5/0421H01S5/06209H01S5/327H01S5/34333H01S5/347
    • A semiconductor laser comprises: a first cladding layer of a first conduction type; an active layer stacked on the first cladding layer; and a second cladding layer of a second conduction type stacked on the active layer. The first cladding layer, the active layer and the second cladding layer are made of II-VI compound semiconductors. Pulse oscillation occurs with characteristics of a threshold current Ith(A), a threshold voltage Vth(V) of the diode composed of the first cladding layer, the active layer and the second cladding layer, a differential resistance RS(&OHgr;) of the diode after the rising, a thermal resistance Rt(K/W) and a characteristic temperature To(K). When two amounts &agr; and &bgr; are defined by: &agr;≡(Rt/To)IthVth &bgr;≡(Rt/To)RSIth2 the point (&agr;,&bgr;) exists in an area on the &agr;-&bgr; plane surrounded by the straight line &agr;=0, the straight line &bgr;=0, and the curve ((21n t−1)/t, (1−ln t)/t2) having t as a parameter. The semiconductor laser may include a first optical waveguide layer between the first cladding layer and the active layer and include a second optical waveguide layer between the second cladding layer and the active layer, the first optical waveguide layer and the second optical waveguide layer being made of II-VI compound semiconductors. II-VI compound semiconductors making the first cladding layer and the second cladding layer may be a ZnMgSSe compound semiconductor. A semiconductor laser using II-VI compound semiconductors and having the capability of continuous oscillation at high temperatures including the room temperature is provided.