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21. 发明申请

US20100004393A1 Polyolefin polymer containing vinyl groups at both ends and composition thereof 有权
标题翻译：在两端含有乙烯基的聚烯烃聚合物及其组成
公开(公告)号：US20100004393A1
公开(公告)日：2010-01-07
申请号：US12310545
申请日：2007-08-29
申请人： Shigenobu Ikenaga , Keiji Okada , Yoshiki Shimokawatoko , Akihiro Matsuda , Shigekazu Matsui , Masahiro Enna
发明人： Shigenobu Ikenaga , Keiji Okada , Yoshiki Shimokawatoko , Akihiro Matsuda , Shigekazu Matsui , Masahiro Enna
IPC分类号： C08L23/00 , C08F236/06 , C08F232/08
CPC分类号： C08L23/02 , B32B1/02 , B32B1/08 , B32B25/08 , B32B25/20 , B32B27/08 , B32B27/18 , B32B27/281 , B32B27/302 , B32B27/308 , B32B27/32 , B32B27/34 , B32B27/36 , B32B2264/025 , B32B2264/10 , B32B2264/104 , B32B2270/00 , B32B2307/54 , B32B2307/724 , B32B2419/00 , B32B2535/00 , B32B2553/00 , B32B2605/00 , C08F4/65912 , C08F4/65927 , C08F8/42 , C08F8/50 , C08F210/00 , C08F210/02 , C08F210/06 , C08F210/16 , C08F210/18 , C08K5/14 , C08L9/00 , C08L21/00 , C08L23/04 , C08L23/0823 , C08L23/10 , C08L23/16 , C08L23/20 , Y10S525/938 , Y10T428/31938 , C08F4/6592 , C08L2666/06 , C08L2666/08 , C08F236/20 , C08F2500/25 , C08F2500/17 , C08F2500/11 , C08F236/06 , C08F2500/15 , C08F2500/16
摘要： The present invention is a polyolefin polymer containing vinyl groups at both ends thereof, and a composition and a molded product containing the polymer, wherein the polymer contains a constitutional unit derived from at least one selected from the group consisting of ethylene (a), an α-olefin (b) having 3 to 20 carbon atoms, and a cyclic olefin (c), and (1) a ratio of terminal vinylation is 70% or more relative to all of both ends of molecular chains, and (2) an intrinsic viscosity [η] is in the range of 0.01 to 10 dl/g as measured in a decalin solution at 135° C. The polymer of the present invention may be molded by a LIM molding, an injection molding, a transfer molding, a compression molding, and the like, and is excellent in acid resistance, gas permeation resistance, hydrolysis resistance, and dynamic fatigue resistance. From the polymer, a thermoplastic resin composition and a crosslinkable resin composition, and a crosslinked composition having excellent mechanical characteristics are obtained.
摘要翻译：本发明是在其两端含有乙烯基的聚烯烃聚合物和含有该聚合物的组合物和成型体，其中，所述聚合物含有来源于以下的至少一种的结构单元：乙烯（a），具有3至20个碳原子的α-烯烃（b）和环状烯烃（c），和（1）末端乙烯基化的比率相对于分子链的全部两端为70％以上，（2）特性粘度η在135℃下在十氢化萘溶液中测得的范围为0.01至10dl / g。本发明的聚合物可以通过LIM模制，注模，传递模塑，压缩成型等，耐酸性，耐气体渗透性，耐水解性，动态耐疲劳性优异。从聚合物得到热塑性树脂组合物和交联性树脂组合物，得到机械特性优异的交联组合物。

22. 发明申请

US20090023619A1 Viscosity modifier of lubricating oil for power transmission system and lubricating oil composition for power transmission system 有权
标题翻译：动力传动系统润滑油粘度调节剂和动力传动系统润滑油组成
公开(公告)号：US20090023619A1
公开(公告)日：2009-01-22
申请号：US11886960
申请日：2006-03-24
申请人： Ryousuke Kaneshige , Akihiro Matsuda , Satoshi Ikeda , Keiji Okada , Masaaki Kawasaki
发明人： Ryousuke Kaneshige , Akihiro Matsuda , Satoshi Ikeda , Keiji Okada , Masaaki Kawasaki
IPC分类号： C10M145/14 , C08F210/02 , C10M143/02
CPC分类号： C10M169/041 , C10M107/02 , C10M143/00 , C10M2203/1006 , C10M2205/02 , C10M2205/022 , C10M2205/024 , C10M2209/084 , C10N2220/02 , C10N2220/021 , C10N2220/022 , C10N2220/032 , C10N2230/02 , C10N2230/68 , C10N2240/04 , C10N2240/042
摘要： A lubricating oil composition for a power transmission system, which is excellent in both of low-temperature viscosity property and shear stability, is provided. The viscosity modifier of a lubricating oil for a power transmission system according to the present invention comprises an ethylene/α-olefin copolymer (B) having the properties: (B1) an ethylene content in the range of 70 to 85% by mol, (B2) an intrinsic viscosity [η] in the range of 0.2 to 1.0 dl/g, (B3) Mw/Mn not more than 2.4, and (B4) a melting point, as measured by DSC, not higher than 60° C., or no melting point observed.
摘要翻译：提供了低温粘度特性和剪切稳定性优异的动力传递系统用润滑油组合物。根据本发明的用于动力传动系统的润滑油的粘度调节剂包括具有以下性质的乙烯/α-烯烃共聚物（B）：（B1）乙烯含量在70至85摩尔％范围内（ B2）特性粘度η在0.2〜1.0dl / g的范围内，（B3）Mw / Mn不大于2.4，（B4）通过DSC测定的熔点不高于60℃。，或没有观察到熔点。

23. 发明申请

US20080125561A1 Copolymer, lubricating oil viscosity modifier, and lubricating oil composition 有权
标题翻译：共聚物，润滑油粘度调节剂和润滑油组成
公开(公告)号：US20080125561A1
公开(公告)日：2008-05-29
申请号：US11976092
申请日：2007-10-19
申请人： Akihiro Matsuda , Nobuo Murase , Satoshi Ikeda , Masahiro Enna , Junichi Mohri
发明人： Akihiro Matsuda , Nobuo Murase , Satoshi Ikeda , Masahiro Enna , Junichi Mohri
IPC分类号： C08F210/00
CPC分类号： C10M107/10 , C08F10/00 , C08F210/16 , C10M107/06 , C10M107/08 , C10M2205/022 , C10M2205/024 , C10M2205/026 , C10M2205/028 , C10M2205/10 , C10N2220/02 , C10N2220/021 , C10N2220/022 , C10N2230/02 , C08F210/06 , C08F2500/20 , C08F2500/03 , C08F2500/08 , C08F4/64048
摘要： A copolymer containing a constituent unit derived from ethylene and a constituent unit derived from an α-olefin having 3 to 20 carbon atoms and satisfying the following requirements (1) to (5): (1) the copolymer has a melting point (Tm) of −20° C. to 100° C.; (2) the melting point (Tm) and the density D (g/cm3) satisfy the following expression Tm≧1073×D−893 (1); (3) the copolymer has a molecular weight distribution (Mw/Mn) measured by GPC of 1.6 to 5.0; (4) the copolymer has a half-width (ΔThalf) of a melting peak measured by DSC of 90° C. or less; and (5) the half-width (ΔThalf) and the melting point (Tm) satisfy the relationship shown by the following expression ΔThalf≦−0.71×Tm+101.4. (2)
摘要翻译：含有源自乙烯的构成单元的共聚物和来自具有3〜20个碳原子的α-烯烃的构成单元，满足以下要求（1）〜（5）：（1）共聚物的熔点（Tm） -20℃至100℃。（2）熔点（Tm）和密度D（g / cm 3）满足以下表达式Tm> = 1073×D-893（1）; （3）共聚物通过GPC测定的分子量分布（Mw / Mn）为1.6〜5.0，（4）共聚物具有通过DSC测得的熔融峰的半峰宽（DeltaThalf）为90℃以下; 和（5）半宽度（DeltaThalf）和熔点（Tm）满足以下表达式所示的关系：<？in-line-formula description =“In-line Formulas”end =“lead”？> DeltaThalf < = -0.71xTm + 101.4。（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>

24. 发明授权

US06809000B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06809000B2
公开(公告)日：2004-10-26
申请号：US09797987
申请日：2001-03-05
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L2120
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

25. 发明授权

US06447838B1 Integrated circuit capacitors with barrier layer and process for making the same 失效
标题翻译：具有阻挡层的集成电路电容器及其制造方法
公开(公告)号：US06447838B1
公开(公告)日：2002-09-10
申请号：US08543827
申请日：1995-10-16
申请人： Masamichi Azuma , Eiji Fujii , Yasuhiro Uemoto , Shinichiro Hayashi , Toru Nasu , Yoshihiro Shimada , Akihiro Matsuda , Tatsuo Otsuki , Michael C. Scott , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
发明人： Masamichi Azuma , Eiji Fujii , Yasuhiro Uemoto , Shinichiro Hayashi , Toru Nasu , Yoshihiro Shimada , Akihiro Matsuda , Tatsuo Otsuki , Michael C. Scott , Joseph D. Cuchiaro , Carlos A. Paz de Araujo
IPC分类号： B05D512
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55 , H01L28/65 , Y10T29/42
摘要： A Ti/TiN adhesion/barrier layer is formed on a substrate and annealed. The anneal step is performed at a temperature within a good morphology range of 100° C. above a base barrier anneal temperature that depends on the thickness of said barrier layer. The base barrier anneal temperature is about 700° C. for a barrier thickness of about 1000 Å and about 800° C. for a barrier thickness of about 3000 Å. The barrier layer is 800 Å thick or thicker. A first electrode is formed, followed by a BST dielectric layer and a second electrode. A bottom electrode structure in which a barrier layer of TiN is sandwiched between two layers of platinum is also disclosed. The process and structures also produce good results with other capacitor dielectrics, including ferroelectrics such as strontium bismuth tantalate.
摘要翻译：在基板上形成Ti / TiN粘合/阻挡层并退火。退火步骤在取决于所述阻挡层的厚度的基本阻挡退火温度之上的100℃的良好形态范围内进行。对于约3000的屏障厚度，对于约1000和约800℃的阻挡层厚度，基底阻挡退火温度为约700℃。阻挡层厚度为800或更厚。形成第一电极，随后是BST介电层和第二电极。还公开了其中TiN阻挡层夹在两层铂之间的底部电极结构。该工艺和结构也与其他电容器电介质（包括铁电锶钽酸锶）等产生良好的结果。

26. 发明授权

US06239462B1 Semiconductor capacitive device having improved anti-diffusion properties and a method of making the same 失效
标题翻译：具有改进的抗扩散性能的半导体电容器件及其制造方法
公开(公告)号：US06239462B1
公开(公告)日：2001-05-29
申请号：US09120893
申请日：1998-07-23
申请人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
发明人： Keisaku Nakao , Akihiro Matsuda , Yasufumi Izutsu , Toyoji Ito , Takumi Mikawa , Toru Nasu , Yoshihisa Nagano , Keisuke Tanaka , Toshie Kutsunai
IPC分类号： H01L27108
CPC分类号： H01L28/55
摘要： The semiconductor device of the invention includes a capacitor device, which is formed on a substrate and which includes a capacitive lower electrode, a capacitive insulating film made of an insulating metal oxide film and a capacitive upper electrode. An interlevel insulating film having an opening reaching the capacitive upper electrode is formed over the capacitor device. A metal interconnection including a titanium film is formed over the interlevel insulating film so as to be electrically connected to the capacitive upper electrode through the opening. An anti-diffusion film having conductivity is formed between the capacitive upper electrode and the metal interconnection for preventing titanium atoms composing the titanium film of the metal interconnection from passing through the capacitive upper electrode and diffusing into the capacitive insulating film.
摘要翻译：本发明的半导体器件包括形成在基板上的电容器器件，其包括电容式下电极，由绝缘金属氧化物膜制成的电容绝缘膜和电容上电极。在电容器装置上形成具有到达电容上电极的开口的层间绝缘膜。在层间绝缘膜上形成包括钛膜的金属互连，以便通过开口与电容上电极电连接。在电容上电极和金属互连之间形成具有导电性的防扩散膜，以防止构成金属互连的钛膜的钛原子通过电容上电极并扩散到电容绝缘膜。

27. 发明授权

US06169304A Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer 失效
标题翻译：具有钝化层的半导体器件使氢扩散到电介质层中最小化
公开(公告)号：US06169304A
公开(公告)日：2001-01-02
申请号：US09071534
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

28. 发明授权

US5780351A Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US5780351A
公开(公告)日：1998-07-14
申请号：US844108
申请日：1997-04-28
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种半导体器件，其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

29. 发明授权

US5661319A Semiconductor device having capacitor 失效
标题翻译：具有电容器的半导体器件
公开(公告)号：US5661319A
公开(公告)日：1997-08-26
申请号：US681093
申请日：1996-07-22
申请人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Tooru Nasu , Akihiro Matsuda , Tatsuo Ootsuki
发明人： Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Tooru Nasu , Akihiro Matsuda , Tatsuo Ootsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/108 , H01L27/12 , H01L29/786 , H01L29/92 , H01L29/94 , H01G7/06
CPC分类号： H01L29/94 , H01L27/10808 , H01L27/10852 , H01L27/1203 , H01L28/55 , H01L29/78654 , H01L28/75
摘要： This is a semiconductor device having an integrated circuit and a capacitor formed on a semiconductor substrate. The capacitor comprises a bottom electrode serving also as a part of a diffusion layer of the integrated circuit, a dielectric film being formed on the bottom electrode, and a top electrode of a conductive film being formed on the dielectric film. In particular, it is preferred to form the dielectric film in two layers of dielectric film, and compose the dielectric film contacting with the bottom electrode of a dielectric material in a composition possessing an excess of a metal element than the stoichiometric composition.
摘要翻译：这是具有形成在半导体衬底上的集成电路和电容器的半导体器件。电容器包括还用作集成电路的扩散层的一部分的底部电极，形成在底部电极上的电介质膜和形成在电介质膜上的导电膜的顶部电极。特别地，优选将电介质膜形成为两层电介质膜，并且构成与具有比化学计量组成更多的金属元素的组成的与电介质材料的底电极接触的电介质膜。

30. 发明授权

US09089633B2 Artificial heart device 有权
标题翻译：人造心脏装置
公开(公告)号：US09089633B2
公开(公告)日：2015-07-28
申请号：US13306077
申请日：2011-11-29
申请人： Daisuke Ogawa , Hideki Kanebako , Akihiro Matsuda
发明人： Daisuke Ogawa , Hideki Kanebako , Akihiro Matsuda
IPC分类号： A61M1/10 , A61M1/12
CPC分类号： A61M1/10 , A61M1/1006 , A61M1/101 , A61M1/102 , A61M1/1086 , A61M1/122 , A61M1/125 , A61M2205/50 , A61M2205/52
摘要： An artificial heart device includes: a blood pump which assists flow of blood in a heart; a blood pump control part which controls the blood pump; a first data processing part which performs first data processing on at least one data in a first period out of operation data on the blood pump, operation data on a cool sealing unit which circulates lubrication fluid in the blood pump, biological data corresponding to a state of a patient and operation data on a battery; and a TR data storing part which stores data after the first data processing in association with date-and-time data corresponding to date and time at which the data is stored each time the first period elapses, wherein the data stored in the TR data storing part is retrievable.
摘要翻译：一种人造心脏装置包括：一个帮助血液在心脏中流动的血泵; 控制血液泵的血液泵控制部; 第一数据处理部，其对血泵上的运算数据中的第一期间的至少一个数据进行第一数据处理，对血泵中的润滑液循环的冷封装置的运转数据，对应于状态的生物数据患者和电池的操作数据; 以及TR数据存储部，其在第一数据处理之后存储数据，与每当经过第一时间段时存储数据的日期和时间对应的日期和时间数据相关联，其中存储在TR数据存储中的数据部分是可检索的。

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