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21. 发明申请

US20110198668A1 SEMI-CONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20110198668A1
公开(公告)日：2011-08-18
申请号：US13125294
申请日：2009-10-09
申请人： Akihiko Murai
发明人： Akihiko Murai
IPC分类号： H01L33/40
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/20
摘要： A semi-conductor light emitting device 10 in the present invention comprises an n-type ZnO substrate 3, an emission layer 2, anode 4, and cathode 5. The n-type ZnO substrate 3 has a mounting surface 31 on one of its surfaces. The emission layer 2 is composed of a p-type GaN film 24 and an n-type GaN film 22, and superimposed on the n-type ZnO substrate 3 with the p-type GaN film 24 directly disposed on the mounting surface 31 of the n-type ZnO substrate 3. The anode 4 is disposed directly on the mounting surface 31 of the n-type GaN substrate 3 in an ohmic contact therewith and in a spaced relation from the emission layer. The cathode 4 is disposed on the n-type GaN film 22 in an ohmic contact therewith. The cathode 4 and anode 5 are of the same structure solely composed of a metallic material. The semi-conductor light emitting device in the present invention assures good ohmic contact of both the cathode 4 and the anode 5, and minimizes consumption of metallic materials.
摘要翻译：本发明的半导体发光器件10包括n型ZnO衬底3，发射层2，阳极4和阴极5.n型ZnO衬底3在其一个表面上具有安装表面31 。发射层2由p型GaN膜24和n型GaN膜22构成，并且叠层在n型ZnO基板3上，其中p型GaN膜24直接设置在 n型ZnO基板3.阳极4直接设置在n型GaN衬底3的安装表面31上，与其发射欧姆接触并且与发射层间隔开。阴极4以与其形成欧姆接触的方式配置在n型GaN膜22上。阴极4和阳极5具有与金属材料完全相同的结构。本发明的半导体发光器件确保了阴极4和阳极5两者的良好的欧姆接触，并使金属材料的消耗最小化。

22. 发明申请

US20100289043A1 HIGH LIGHT EXTRACTION EFFICIENCY LIGHT EMITTING DIODE (LED) THROUGH MULTIPLE EXTRACTORS 审中-公开
标题翻译：高亮度提取效率LED发光二极管（LED）通过多个萃取器
公开(公告)号：US20100289043A1
公开(公告)日：2010-11-18
申请号：US11940848
申请日：2007-11-15
申请人： David J. F. Aurelien , Claude C. A. Weisbuch , Akihiko Murai , Steven P. DenBaars
发明人： David J. F. Aurelien , Claude C. A. Weisbuch , Akihiko Murai , Steven P. DenBaars
IPC分类号： H01L33/58 , H01L21/28
CPC分类号： H01L33/20 , H01L33/10 , H01L2933/0083
摘要： An (Al,In,Ga)N and ZnO direct wafer bonded light emitting diode (LED), combined with a second light extractor acting as an additional light extraction method. This second light extraction method aims at extracting the light which has not been extracted by the ZnO structure, and more specifically the light which is trapped in the (Al,In,Ga)N layer. This second method is suited for light extraction from thin films, using surface patterning or texturing, or a photonic crystal acting as a diffraction grating. The combination of both the ZnO structure and the second light extraction method enables most of the emitted light from the LED to be extracted. In a more general extension of the present invention, the ZnO structure can be replaced by another material in order to achieve additional light extraction. In another extension, the (Al,In,Ga)N layer can be replaced by structures comprising other materials compositions, in order to achieve additional light extraction.
摘要翻译： An（Al，In，Ga）N和ZnO直接晶圆键合发光二极管（LED），与作为附加光提取方法的第二光提取器组合。该第二光提取方法旨在提取未被ZnO结构提取的光，更具体地说是捕获在（Al，In，Ga）N层中的光。该第二种方法适用于使用表面图案化或纹理化的薄膜，或用作衍射光栅的光子晶体进行光提取。 ZnO结构和第二光提取方法的组合使得能够提取来自LED的大部分发射光。在本发明的更一般的扩展中，为了实现额外的光提取，可以用另一种材料代替ZnO结构。在另一个延伸部分中，（Al，In，Ga）N层可以由包括其它材料组成的结构代替，以便实现额外的光提取。

23. 发明申请

US20070102721A1 High light extraction efficiency light emitting diode (LED) 有权
标题翻译：高光提取效率发光二极管（LED）
公开(公告)号：US20070102721A1
公开(公告)日：2007-05-10
申请号：US11593268
申请日：2006-11-06
申请人： Steven DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Fellows , Akihiko Murai
发明人： Steven DenBaars , Shuji Nakamura , Hisashi Masui , Natalie Fellows , Akihiko Murai
IPC分类号： H01L33/00
CPC分类号： H01L33/58 , H01L33/007 , H01L33/20 , H01L33/26 , H01L33/60
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED) combined with a shaped plastic optical element, in which the directional light from the ZnO cone, or from any high refractive index material in contact with the LED surface, entering the shaped plastic optical element is extracted to air.
摘要翻译：一种（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED）与成形塑料光学元件组合，其中来自ZnO圆锥的定向光或与LED接触的任何高折射率材料表面，进入成形塑料光学元件被抽取到空气中。

24. 发明申请

US20070001186A1 (Al, Ga, In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method 无效
标题翻译：（Al，Ga，In）N和ZnO直接晶圆结合的光电应用及其制造方法
公开(公告)号：US20070001186A1
公开(公告)日：2007-01-04
申请号：US11454691
申请日：2006-06-16
申请人： Akihiko Murai , Christina Chen , Daniel Thompson , Lee McCarthy , Steven DenBaars , Shoji Nakamura , Umesh Mishra
发明人： Akihiko Murai , Christina Chen , Daniel Thompson , Lee McCarthy , Steven DenBaars , Shoji Nakamura , Umesh Mishra
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/20 , H01L33/32 , H01S5/0215 , H01S5/0421 , H01S5/18347 , H01S5/18369 , H01S5/1838 , H01S5/32341
摘要： An (Al, Ga, In)N and ZnO direct wafer bonded light emitting diode (LED), wherein light passes through electrically conductive ZnO. Flat and clean surfaces are prepared for both the (Al, Ga, In)N and ZnO wafers. A wafer bonding process is then performed between the (Al, Ga, In)N and ZnO wafers, wherein the (Al, Ga, In)N and ZnO wafers are joined together and then wafer bonded in a nitrogen ambient under uniaxial pressure at a set temperature for a set duration. After the wafer bonding process, ZnO is shaped for increasing light extraction from inside of LED.
摘要翻译： An（Al，Ga，In）N和ZnO直接晶圆键合发光二极管（LED），其中光通过导电ZnO。为（Al，Ga，In）N和ZnO晶圆制备平坦且干净的表面。然后在（Al，Ga，In）N和ZnO晶片之间进行晶片接合工艺，其中（Al，Ga，In）N和ZnO晶片被接合在一起，然后在氮气氛下在单轴压力下在设定温度一段时间。在晶片接合工艺之后，ZnO被成形为用于从LED内部增加光提取。

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