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21. 发明申请

US20050185076A1 Line sensor 有权
标题翻译：线传感器
公开(公告)号：US20050185076A1
公开(公告)日：2005-08-25
申请号：US11042345
申请日：2005-01-26
申请人： Kazuhisa Miyaguchi
发明人： Kazuhisa Miyaguchi
IPC分类号： H04N3/15 , H04N5/335
CPC分类号： H04N5/3692
摘要： The line sensor 100 comprises an image pick-up part 10, charge integrator 20 and charge output part 30. The image pick-up part comprises an N pixel parts 111 to 11N arranged in one direction, an nth pixel part 11n comprises an M photosensitive regions 121,n to 12M,n that generate and accumulate charge in response to an incident energy beam. The charge integrator 20 comprises an N integrators 211 to 21N, and the charge output part 30 comprises an N output parts 311 to 31N. The charges generated and accumulated by each of the M photosensitive regions 121,n to 12M,n that the nth pixel part 11n comprises are accumulated and integrated by the nth integrator 21n and output to the nth output part 31n in a batch.
摘要翻译：线传感器100包括图像拾取部分10，电荷积分器20和电荷输出部分30.图像拾取部分包括N个像素部分11 1至11 N 2 / SUB>排列在第一个方向上的第n个像素部分11 N包括M个感光区域12，1，n，12，M，n，并响应入射能量束累积电荷。电荷积分器20包括N个积分器21 1至21 N N，并且电荷输出部分30包括N个输出部分31 1至31 N 。由M个光敏区12 1，n 12至12 M，n N中的每一个产生和累积的电荷，第n个像素部11 N包括由第n个积分器21积累和积分，并以批次的形式输出到第n个输出部分31。

22. 发明授权

US06919569B2 Radiation detector and method of manufacture thereof 有权
标题翻译：辐射检测器及其制造方法
公开(公告)号：US06919569B2
公开(公告)日：2005-07-19
申请号：US10276722
申请日：2001-05-18
申请人： Takuya Homme , Kazuhisa Miyaguchi , Toshio Takabayashi
发明人： Takuya Homme , Kazuhisa Miyaguchi , Toshio Takabayashi
IPC分类号： G01T1/20 , C23C14/50 , G01T1/24 , G01T7/00 , H01L27/14 , H01L31/09 , H04N5/32
CPC分类号： H01L27/14663 , H01L27/14618 , H01L2224/05554 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014
摘要： A solid-state imaging element 2 having a light-receiving portion where a plurality of photoelectric conversion elements 21 are arranged, and electrode pads 22 electrically connected to the photoelectric conversion elements 21 is mounted on a substrate 1. A scintillator 3 is formed on the surface of the light-receiving portion of the solid-state imaging element. Around a support surface 10 where the solid-state imaging element 2 of the substrate 1 is mounted, holding portions 14 and 15 are formed on opposing side walls to hold and project the surface of the light-receiving portion from a vapor deposition holder toward a vapor deposition chamber in forming the scintillator 3.
摘要翻译：具有布置有多个光电转换元件21的光接收部分的固态成像元件2和与光电转换元件21电连接的电极焊盘22安装在基板1上。闪烁体3形成在固态成像元件的光接收部分的表面上。围绕安装基板1的固态成像元件2的支撑表面10，在相对的侧壁上形成保持部分14和15，以将光接收部分的表面从气相沉积保持器朝向蒸镀室形成闪烁体3。

23. 发明授权

US08045680B2 Imaging device 有权
标题翻译：成像设备
公开(公告)号：US08045680B2
公开(公告)日：2011-10-25
申请号：US12515851
申请日：2007-11-19
申请人： Akira Taoka , Kazuhisa Miyaguchi
发明人： Akira Taoka , Kazuhisa Miyaguchi
IPC分类号： H05G1/56
CPC分类号： G01T1/2018 , A61B6/14 , A61B6/4494 , G01T1/17 , H04N5/32
摘要： An imaging device includes an imager 7 which images an X-ray image generated by X-ray irradiation; an X-ray detector 90 which detects X-ray irradiation and outputs a detected signal showing the result of the detection; an EP-ROM 93a storing an offset value of the X-ray detector 90; and a signal processor 61 which generates reference information for acquiring a start timing of imaging by the imager 7 from the detected signal based on the offset value stored in the EP-ROM 93a.
摘要翻译：成像装置包括成像器7，其对通过X射线照射产生的X射线图像进行成像; X射线检测器90，其检测X射线照射，并输出表示检测结果的检测信号; 存储X射线检测器90的偏移值的EP-ROM93a; 以及信号处理器61，其基于存储在EP-ROM93a中的偏移值，从检测信号生成用于从成像器7获取成像的开始定时的参考信息。

24. 发明授权

US07705317B2 Radiation imaging device and radiation imaging method 有权
标题翻译：放射成像装置和放射成像方法
公开(公告)号：US07705317B2
公开(公告)日：2010-04-27
申请号：US11660366
申请日：2005-08-04
申请人： Kazuhisa Miyaguchi
发明人： Kazuhisa Miyaguchi
IPC分类号： G01T1/20
CPC分类号： G01T1/2018 , H01L27/14618 , H01L27/14663 , H01L27/14689 , H01L27/148 , H01L31/02322 , H01L2224/48091 , H01L2924/10253 , H01L2924/3025 , H04N5/32 , H01L2924/00014 , H01L2924/00
摘要： A radiation imaging device which, as a whole, can be further reduced in size and thickness with the area of an imaging area sufficiently achieved. A scintillator film 2 emitting light with a predetermined wavelength in response to an incident of radiation is accommodated in a case 5 while being sandwiched between an image sensor 1 and a circuit board 3. The image sensor 1 is provided such that its photodetecting section 11 is in contact with the scintillator film 2 and its electrode section 12 is projected and exposed to the outside from the scintillator film 2. The electrode section 12 is electrically connected by a wire 6 to an electrode section 32 of the circuit board 3.
摘要翻译：放射线成像装置整体上可以进一步减小尺寸和厚度，同时充分实现成像区域的面积。响应于辐射入射而发射具有预定波长的光的闪烁体膜2在夹在图像传感器1和电路板3之间的同时被容纳在壳体5中。图像传感器1被设置为使得其光电检测部分11为与闪烁体膜2接触并且其电极部分12从闪烁体膜2突出并暴露于外部。电极部分12通过电线6电连接到电路板3的电极部分32。

25. 发明申请

US20100054405A1 IMAGING DEVICE 有权
标题翻译：成像装置
公开(公告)号：US20100054405A1
公开(公告)日：2010-03-04
申请号：US12515851
申请日：2007-11-19
申请人： Akira Taoka , Kazuhisa Miyaguchi
发明人： Akira Taoka , Kazuhisa Miyaguchi
IPC分类号： A61B6/00
CPC分类号： G01T1/2018 , A61B6/14 , A61B6/4494 , G01T1/17 , H04N5/32
摘要： An imaging device includes an imager 7 which images an X-ray image generated by X-ray irradiation; an X-ray detector 90 which detects X-ray irradiation and outputs a detected signal showing the result of the detection; an EP-ROM 93a storing an offset value of the X-ray detector 90; and a signal processor 61 which generates reference information for acquiring a start timing of imaging by the imager 7 from the detected signal based on the offset value stored in the EP-ROM 93a.
摘要翻译：成像装置包括成像器7，其对通过X射线照射产生的X射线图像进行成像; X射线检测器90，其检测X射线照射，并输出表示检测结果的检测信号; 存储X射线检测器90的偏移值的EP-ROM93a; 以及信号处理器61，其基于存储在EP-ROM93a中的偏移值，从检测信号生成用于从成像器7获取成像的开始定时的参考信息。

26. 发明授权

US07483514B2 X-ray imaging method and X-ray imaging system 有权
标题翻译： X射线成像方法和X射线成像系统
公开(公告)号：US07483514B2
公开(公告)日：2009-01-27
申请号：US11635783
申请日：2006-12-08
申请人： Shin-ichiro Takagi , Kazuhisa Miyaguchi
发明人： Shin-ichiro Takagi , Kazuhisa Miyaguchi
IPC分类号： A61B6/00
CPC分类号： G01T1/2018 , G06K9/40
摘要： An X-ray imaging system is constituted of: an X-ray imaging device that includes a scintillator, which converts an X-ray image to an optical image, and an imaging element, which acquires an X-ray observed image by detecting the optical image generated by the scintillator; a first subtracter that performs a subtraction process between a first X-ray observed image, which contains a first noise image component, and a second X-ray observed image, which contains a second noise image component, to generate a noise image; a threshold value processing circuit that performs a threshold value process on the noise image to extract the first noise image component; and a second subtracter that subtracts the extracted first noise image component, from the first X-ray observed image to generate a noise- removed image.
摘要翻译： X射线成像系统由X射线成像装置构成：将X射线图像转换为光学图像的闪烁体的X射线摄像装置和摄像元件，摄像元件通过检测X射线由闪烁体产生的图像; 执行包含第一噪声图像分量的第一X射线观察图像和包含第二噪声图像分量的第二X射线观察图像之间的减法处理以产生噪声图像的第一减法器; 阈值处理电路，对噪声图像进行阈值处理，提取第一噪声图像成分; 以及第二减法器，从第一X射线观察图像中减去所提取的第一噪声图像分量，以产生噪声去除图像。

27. 发明申请

US20080067392A1 Radiation Imaging Device and Radiation Imaging Method 有权
标题翻译：辐射成像装置和辐射成像方法
公开(公告)号：US20080067392A1
公开(公告)日：2008-03-20
申请号：US11660366
申请日：2005-08-04
申请人： Kazuhisa Miyaguchi
发明人： Kazuhisa Miyaguchi
IPC分类号： G01T1/20
CPC分类号： G01T1/2018 , H01L27/14618 , H01L27/14663 , H01L27/14689 , H01L27/148 , H01L31/02322 , H01L2224/48091 , H01L2924/10253 , H01L2924/3025 , H04N5/32 , H01L2924/00014 , H01L2924/00
摘要： A radiation imaging device which, as a whole, can be further reduced in size and thickness with the area of an imaging area sufficiently achieved. A scintillator film 2 emitting light with a predetermined wavelength in response to an incident of radiation is accommodated in a case 5 while being sandwiched between an image sensor 1 and a circuit board 3. The image sensor 1 is provided such that its photodetecting section 11 is in contact with the scintillator film 2 and its electrode section 12 is projected and exposed to the outside from the scintillator film 2. The electrode section 12 is electrically connected by a wire 6 to an electrode section 32 of the circuit board 3.
摘要翻译：放射线成像装置整体上可以进一步减小尺寸和厚度，同时充分实现成像区域的面积。响应于辐射入射而发射具有预定波长的光的闪烁体膜2在夹在图像传感器1和电路板3之间的同时被容纳在壳体5中。图像传感器1被设置为使得其光电检测部分11为与闪烁体膜2接触并且其电极部分12从闪烁体膜2突出并暴露于外部。电极部分12通过电线6电连接到电路板3的电极部分32。

28. 发明申请

US20050151169A1 Solid-state imaging device and solid-state imaging device array 有权
标题翻译：固态成像装置和固态成像装置阵列
公开(公告)号：US20050151169A1
公开(公告)日：2005-07-14
申请号：US10515548
申请日：2003-05-02
申请人： Kazuhisa Miyaguchi
发明人： Kazuhisa Miyaguchi
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/3725
CPC分类号： H01L27/1485 , H01L27/14812
摘要： In a photosensitive part 10, arranged from pixels A aligned in n rows and m columns, supply wiring lines 13a and 13b, which are electrically connected and apply transfer voltages to transfer electrodes 12a to 12d, formed of polycrystalline silicon, are installed so as to cover parts of the top surfaces of light-shielded pixels D. Dead zones for installing supply wiring lines, which existed priorly at the respective end parts in a horizontal direction of a photosensitive part, can thereby be eliminated and the photosensitive part can be made wide. Also, in the case where a plurality of the solid-state image pickup devices are used upon being made adjacent each other in the horizontal direction, parts at which image pickup is not carried out can be lessened. Also, the amount of lowering of the amounts of incident light on light-shielded pixels D can be corrected based on the output signals from light-shielded pixels D or other pixels A. By the above, a solid-state image pickup device, with which the dead zones can be made small and the photosensitive part can be made wide, and a solid-state image pickup device array, using such solid-state image pickup devices, can be realized.
摘要翻译：在从n行m列排列的像素A排列的感光部10中，供给与多晶硅形成的转印电极12a〜12d电连接并施加转印电压的布线13a，13b，安装以遮蔽遮光像素D的顶表面的部分。因此可以消除在感光部分的水平方向上在各个端部处先存在的用于安装供电布线的死区，并且感光部分可以做广。此外，在使多个固态摄像装置在水平方向上彼此相邻的情况下使用的情况下，可以减少不进行图像拾取的部分。此外，可以基于来自遮光像素D或其他像素A的输出信号来校正遮光像素D上的入射光量的降低量。通过上述，固态图像拾取装置具有可以使死区变小并且感光部分可以变宽，并且可以实现使用这种固态图像拾取装置的固态图像拾取装置阵列。

29. 发明授权

US06833548B2 Radiation detector and method of producing the same 有权
标题翻译：辐射探测器及其制造方法
公开(公告)号：US06833548B2
公开(公告)日：2004-12-21
申请号：US10276725
申请日：2002-11-18
申请人： Takuya Homme , Kazuhisa Miyaguchi , Toshio Takabayashi
发明人： Takuya Homme , Kazuhisa Miyaguchi , Toshio Takabayashi
IPC分类号： G01T124
CPC分类号： G01T1/2018
摘要： A solid-state imaging element 2 having a light-receiving portion where a plurality of photoelectric conversion elements 21 are arranged, and electrode pads 22 electrically connected to the photoelectric conversion elements 21 is mounted on a substrate 1. A scintillator 3 is formed on the surface of the light-receiving portion of the solid-state imaging element. Around a support surface wherein the solid-state imaging element 2 of the substrate 1 is mounted, positioning portions 14 to 16 are formed, which project higher than the support surface and position the solid-state imaging element 2 with side walls. The top surfaces of these positioning portions are formed such that a light-receiving surface 2a of the solid-state imaging element 2 is higher than the top surfaces.
摘要翻译：具有布置有多个光电转换元件21的光接收部分的固态成像元件2和与光电转换元件21电连接的电极焊盘22安装在基板1上。闪烁体3形成在固态成像元件的光接收部分的表面。在其中安装有基板1的固态成像元件2的支撑表面上，形成定位部分14至16，突出部分高于支撑表面，并将固态成像元件2定位成侧壁。这些定位部分的顶表面形成为使得固态成像元件2的光接收表面2a高于顶表面。

30. 发明授权

US06724062B2 Semiconductor energy detector 有权
标题翻译：半导体能量探测器
公开(公告)号：US06724062B2
公开(公告)日：2004-04-20
申请号：US09886110
申请日：2001-06-22
申请人： Hiroshi Akahori , Hisanori Suzuki , Kazuhisa Miyaguchi , Masaharu Muramatsu , Koei Yamamoto
发明人： Hiroshi Akahori , Hisanori Suzuki , Kazuhisa Miyaguchi , Masaharu Muramatsu , Koei Yamamoto
IPC分类号： H01L3100
CPC分类号： H01L27/14812
摘要： A semiconductor energy detector as disclosed herein is arranged so that an aluminum wiring pattern is formed on the front side of transfer electrodes of a CCD vertical shift register, which pattern includes meander-shaped auxiliary wirings for performing auxiliary application/supplement and additional wirings for performing auxiliary supplement of transfer voltages in a way independent of the auxiliary wirings with respective ones of such wirings being connected to corresponding transfer electrodes to thereby avoid a problem as to lead resistivities at those transfer electrodes made of polycrystalline silicon, thus achieving the intended charge transfer at high speeds with high efficiency.
摘要翻译：这里所公开的一种半导体能量检测器被布置成在CCD垂直移位寄存器的传输电极的正面上形成铝布线图形，该垂直移位寄存器的图形包括用于执行辅助应用/补充的曲折辅助布线和用于执行的附加布线以与辅助布线无关的方式辅助补偿传输电压，其中相应的这些布线连接到相应的传输电极，从而避免在由多晶硅制成的那些传输电极处的引线电阻的问题，从而实现预期的电荷转移高速高效率。

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