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21. 发明申请

WO2016014168A1 SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH 审中-公开
标题翻译：单平台，多个循环间隔沉积和蚀刻
公开(公告)号：WO2016014168A1
公开(公告)日：2016-01-28
申请号：PCT/US2015/035666
申请日：2015-06-12
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Hao , YING, Chentsau (Chris) , NEMANI, Srinivas D. , YIEH, Ellie Y.
IPC分类号： H01L21/02
CPC分类号： H01L21/3086 , C23C16/04 , C23C16/34 , C23C16/345 , C23C16/45544 , C23C16/50 , H01J37/32009 , H01J37/32082 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/0337 , H01L21/28132 , H01L21/30604 , H01L21/3065 , H01L21/31116 , H01L21/32139 , H01L21/67069 , H01L21/67207 , H01L21/67742
摘要： A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion using a first plasma process. The spacer layer is etched to form a second portion of the multiple cycle spacer on the first portion using a second plasma process. A cycle comprising depositing and etching of the spacer layer is continuously repeated until the multiple cycle spacer is formed.
摘要翻译：多周期间隔物的第一部分形成在衬底上的图案化特征的侧壁上。使用第一等离子体工艺在第一部分上沉积间隔层。使用第二等离子体工艺蚀刻间隔层以在第一部分上形成多循环间隔物的第二部分。连续重复包括沉积和蚀刻间隔层的循环直到形成多循环间隔物。

22. 发明申请

WO2016011294A2 ADDITIVE MANUFACTURING WITH LASER AND GAS FLOW 审中-公开
标题翻译：具有激光和气流的添加剂制造
公开(公告)号：WO2016011294A2
公开(公告)日：2016-01-21
申请号：PCT/US2015/040808
申请日：2015-07-16
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , SUBRAMANI, Anantha K. , KRISHNAN, Kasiraman , SUN, Jennifer Y. , BREZOCZKY, Thomas B. , ROWLAND, Christopher A. , NEMANI, Srinivas D. , SRINIVASAN, Swaminathan , YAVELBERG, Simon , YIEH, Ellie Y. , NG, Hou T.
CPC分类号： B22F3/1055 , B22F1/0088 , B22F2003/1056 , B22F2003/1057 , B23K26/1464 , B23K26/342 , B23K26/702 , B28B1/001 , B28B17/0081 , B29C64/153 , B29C64/20 , B29C64/386 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B33Y50/02 , Y02P10/295
摘要： An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.
摘要翻译：增材制造系统包括台板，构造成将进给材料传送到台板上的进给材料分配器设备，构造成在使用增材制造系统期间产生激光束的激光源，控制器，其被配置为将激光束引导至由计算机辅助设计程序指定的台板上的位置以引起供给材料熔合;配置成供给气体的气体源;以及配置成加速并引导气体到基本上相同位置的喷嘴作为激光束的台板。

23. 发明申请

WO2016011290A1 ADDITIVE MANUFACTURING WITH LASER AND PLASMA 审中-公开
标题翻译：具有激光和等离子体的添加剂制造
公开(公告)号：WO2016011290A1
公开(公告)日：2016-01-21
申请号：PCT/US2015/040803
申请日：2015-07-16
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , SUBRAMANI, Anantha K. , KRISHNAN, Kasiraman , SUN, Jennifer Y. , NEMANI, Srinivas D. , BREZOCZKY, Thomas B. , ROWLAND, Christopher A. , YAVELBERG, Simon , SRINIVASAN, Swaminathan , PATIBANDLA, Nag B. , YIEH, Ellie Y. , NG, Hou T.
IPC分类号： B29C67/00 , B33Y30/00 , B33Y50/02
CPC分类号： B22F3/1055 , B22F1/0003 , B22F2003/1051 , B22F2003/1057 , B22F2202/13 , B22F2301/205 , B22F2998/10 , B23K10/006 , B23K10/027 , B23K26/0006 , B23K26/342 , B23K26/702 , B23K2203/14 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02
摘要： An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material over the platen, a laser configured to produce a laser beam, a controller configured to direct the laser beam to locations specified by data stored in a computer-readable medium to cause the feed material to fuse, and a plasma source configured to produce ions that are directed to substantially the same location on the platen as the laser beam.
摘要翻译：添加剂制造系统包括压板，配置成将进给材料输送到压板上的进料分配器装置，配置成产生激光束的激光器，被配置为将激光束引导到存储在计算机可读介质中的数据指定的位置的控制器，可引导进料材料熔化的等离子体源，以及被配置为产生离子的等离子体源，该离子被引导到与激光束基本相同的压板上的位置。

24. 发明申请

WO2016007672A1 LAYERWISE HEATING, LINEWISE HEATING, PLASMA HEATING AND MULTIPLE FEED MATERIALS IN ADDITIVE MANUFACTURING 审中-公开
标题翻译：加热加热，木质加热，等离子体加热和多种进料添加剂生产
公开(公告)号：WO2016007672A1
公开(公告)日：2016-01-14
申请号：PCT/US2015/039609
申请日：2015-07-08
申请人： APPLIED MATERIALS, INC.
发明人： ROWLAND, Christopher A. , SUBRAMANI, Anantha K. , KRISHNAN, Kasiraman , RAMASWAMY, Kartik , BREZOCZKY, Thomas B. , SRINIVASAN, Swaminathan , SUN, Jennifer Y. , YAVELBERG, Simon , NEMANI, Srinivas D. , PATIBANDLA, Nag B. , NG, Hou T.
IPC分类号： B29C67/00 , B33Y30/00 , B33Y50/02
CPC分类号： B22F3/008 , B22F2003/1051 , B22F2003/1057 , B22F2998/10 , B23K10/006 , B23K10/027 , B28B1/001 , B29C64/153 , B33Y10/00 , B33Y30/00 , B33Y50/02 , H05B3/0061
摘要： An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.
摘要翻译：一种添加剂制造系统，包括压板，进料输送系统，其被配置为将进料输送到由计算机辅助设计程序指定的压板上的位置;以及热源，该热源被配置为将所述进料的温度同时跨越所有层或跨越压板的宽度延伸的区域，并跨越压板的长度扫描该区域。热源可以是加热灯阵列或等离子体源。

25. 发明申请

WO2016003575A2 LOCALIZED STRESS MODULATION FOR OVERLAY AND EPE 审中-公开
标题翻译：用于覆盖和EPE的局部应力调制
公开(公告)号：WO2016003575A2
公开(公告)日：2016-01-07
申请号：PCT/US2015/033810
申请日：2015-06-02
申请人： APPLIED MATERIALS, INC.
发明人： YIEH, Ellie Y. , DAI, Huixiong , NEMANI, Srinivas D. , GODET, Ludovic , BENCHER, Christopher Dennis
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , H01L22/20
摘要： Embodiments of the disclosure provide apparatus and methods for localized stress modulation for overlay and edge placement error (EPE) using electron or ion implantation. In one embodiment, a process for correcting overlay error on a substrate generally includes performing a measurement process in a metrology tool on a substrate to obtain a substrate distortion or an overlay error map, determining doping parameters to correct overlay error or substrate distortion based on the overlay error map, and providing a doping recipe to a doping apparatus based on the doping parameters determined to correct substrate distortion or overlay error. Embodiments may also provide performing a doping treatment process on the substrate using the determined doping repair recipe, for example, by comparing the overlay error map or substrate distortion with a database library stored in a computing system.
摘要翻译：本公开的实施例提供了使用电子或离子注入的用于覆盖和边缘放置误差（EPE）的局部应力调制的装置和方法。在一个实施例中，用于校正衬底上的覆盖误差的处理通常包括在衬底上的度量工具中执行测量过程以获得衬底失真或覆盖误差图，基于所述衬底失真或覆盖误差图确定掺杂参数以校正重叠误差或衬底失真覆盖误差图，并且基于确定用于校正衬底失真或重叠误差的掺杂参数向掺杂装置提供掺杂配方。实施例还可以使用确定的掺杂修复配方在衬底上执行掺杂处理过程，例如通过将覆盖误差图或衬底失真与存储在计算系统中的数据库进行比较。

26. 发明申请

WO2015184362A1 PROTECTIVE VIA CAP FOR IMPROVED INTERCONNECT PERFORMANCE 审中-公开
标题翻译：保护通过改进的互连性能
公开(公告)号：WO2015184362A1
公开(公告)日：2015-12-03
申请号：PCT/US2015/033340
申请日：2015-05-29
申请人： APPLIED MATERIALS, INC.
发明人： NAIK, Mehul , MA, Paul F. , NEMANI, Srinivas D.
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01J37/32091 , H01L21/02068 , H01L21/30604 , H01L21/3065 , H01L21/76807 , H01L21/76846 , H01L21/76877 , H01L23/528 , H01L23/53238 , H01L23/53266 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Exemplary methods of forming a semiconductor structure may include etching a via through a semiconductor structure to expose a first circuit layer interconnect metal. The methods may include forming a layer of a material overlying the exposed first circuit layer interconnect metal. The methods may also include forming a barrier layer within the via having minimal coverage along the bottom of the via. The methods may additionally include forming a second circuit layer interconnect metal overlying the layer of material.
摘要翻译：形成半导体结构的示例性方法可以包括通过半导体结构蚀刻通孔以暴露第一电路层互连金属。所述方法可以包括形成覆盖暴露的第一电路层互连金属的材料层。所述方法还可以包括在通孔内沿着通孔底部形成具有最小覆盖范围的阻挡层。所述方法还可以包括形成覆盖在所述材料层上的第二电路层互连金属。

27. 发明申请

WO2015105651A1 DEVELOPMENT OF HIGH ETCH SELECTIVE HARDMASK MATERIAL BY ION IMPLANTATION INTO AMORPHOUS CARBON FILMS 审中-公开
标题翻译：通过离子注入到非晶碳膜中开发高选择性硬质材料
公开(公告)号：WO2015105651A1
公开(公告)日：2015-07-16
申请号：PCT/US2014/071094
申请日：2014-12-18
申请人： APPLIED MATERIALS, INC.
发明人： MANNA, Pramit , MALLICK, Abhijit Basu , GODET, Ludovic , CHEN, Yongmei , XUE, Jun , SRINIVASAN, Mukund , YIEH, Ellie Y. , NEMANI, Srinivas D.
IPC分类号： H01L21/027 , H01L21/265
CPC分类号： H01L21/3086 , H01L21/31144 , H01L21/31155
摘要： Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with various dopants to increase the hardness and density of the hardmask. The ion implantation of the amorphous carbon hardmask also maintains or reduces the internal stress of the hardmask. The etch selective hardmask generally provides for improved patterning in advanced NAND and DRAM devices.
摘要翻译：本文描述的实施例提供了形成蚀刻选择性硬掩模的方法。非晶碳硬掩模被植入各种掺杂剂以增加硬掩模的硬度和密度。无定形碳硬掩模的离子注入还保持或减少硬掩模的内部应力。蚀刻选择性硬掩模通常提供高级NAND和DRAM器件中的改进的图案化。

28. 发明申请

WO2015041747A1 METHODS FOR ETCHING AN ETCHING STOP LAYER UTILIZING A CYCLICAL ETCHING PROCESS 审中-公开
标题翻译：用于蚀刻循环蚀刻过程的蚀刻停止层的方法
公开(公告)号：WO2015041747A1
公开(公告)日：2015-03-26
申请号：PCT/US2014/048550
申请日：2014-07-29
申请人： APPLIED MATERIALS, INC.
发明人： LING, Mang-Mang , KANG, Sean , PENDER, Jeremiah T. , NEMANI, Srinivas D. , HOWARD, Bradley J.
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J2237/334 , H01L21/76802 , H01L21/76826 , H01L21/76829
摘要： Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.
摘要翻译：提供了使用循环蚀刻工艺蚀刻设置在基板上的蚀刻停止层的方法。在一个实施例中，蚀刻停止层的蚀刻方法包括：通过将处理气体混合物供给到处理室中来对其上设置有氮化硅层的基板进行处理处理，以处理氮化硅层，并进行化学蚀刻工艺在所述基板上通过向所述处理室供给化学蚀刻气体混合物，其中所述化学蚀刻气体混合物至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺蚀刻所处理的氮化硅层。

29. 发明申请

WO2014113398A1 METHOD OF PATTERNING A SILICON NITRIDE DIELECTRIC FILM 审中-公开
标题翻译：硅酸盐电介质薄膜的制作方法
公开(公告)号：WO2014113398A1
公开(公告)日：2014-07-24
申请号：PCT/US2014/011511
申请日：2014-01-14
申请人： APPLIED MATERIALS, INC.
发明人： NEMANI, Srinivas D. , PENDER, Jeremiah T. , ZHOU, Qingjun , LUBOMIRSKY, Dmitry , BELOSTOTSKIY, Sergey G.
IPC分类号： H01L21/027
CPC分类号： H01L21/31116 , H01L21/31111 , H01L21/32105
摘要： Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.
摘要翻译：描述了图案化氮化硅介电膜的方法。例如，各向同性蚀刻电介质膜的方法包括用氧基等离子体工艺部分地修饰氮化硅层的暴露区域，以提供氮化硅层的改性部分和未改性部分。该方法还涉及通过第二等离子体处理来去除对未改性部分氮化硅层的改性部分的选择性。

30. 发明公开

EP4264663A1 APPARATUS FOR POST EXPOSURE BAKE OF PHOTORESIST 无效
公开(公告)号：EP4264663A1
公开(公告)日：2023-10-25
申请号：EP21907418.4
申请日：2021-11-16
申请人： Applied Materials, Inc.
发明人： BUCHBERGER, JR., Douglas A. , LUBOMIRSKY, Dmitry , DUKOVIC, John O. , NEMANI, Srinivas D.
IPC分类号： H01L21/67 , H01L21/677 , H01L21/673 , G03F7/38

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