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21. 发明授权

US08026813B2 Individual management system 有权
标题翻译：个人管理制度
公开(公告)号：US08026813B2
公开(公告)日：2011-09-27
申请号：US12053950
申请日：2008-03-24
申请人： Yumiko Saito , Mayumi Yamaguchi , Konami Izumi
发明人： Yumiko Saito , Mayumi Yamaguchi , Konami Izumi
IPC分类号： G08B13/14
CPC分类号： G01S13/751
摘要： To provide an individual management system for managing products with the use of an automatic identification technology using a wireless communication device. In the individual management system, an individual management device is attached to a managed object, an individual identification device can wirelessly communicate with the individual management device, and an individual information management device can communicate with the individual identification device. The individual management device includes a detection portion such as a sensor. The individual identification device includes a position analysis portion which calculates a distance between the individual management device and the individual identification device. Information on the distance between the individual management device and the individual identification device, and information from the detection portion included in the individual management device are transmitted to the individual identification device. Accordingly, a system user can specify a position of the individual management device accurately.
摘要翻译：提供使用无线通信设备的自动识别技术来管理产品的个人管理系统。在个人管理系统中，将单独的管理装置附加到被管理对象，个体识别装置可以与各个管理装置进行无线通信，个体信息管理装置能够与个体识别装置进行通信。个人管理装置包括诸如传感器的检测部分。个体识别装置包括计算个体管理装置与个体识别装置之间的距离的位置分析部。关于个人管理装置与个体识别装置之间的距离的信息以及来自各个管理装置中包括的检测部分的信息被发送到个体识别装置。因此，系统用户可以准确地指定个体管理装置的位置。

22. 发明申请

US20100187535A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE 有权
标题翻译：薄膜晶体管的制造方法和显示器件的制造方法
公开(公告)号：US20100187535A1
公开(公告)日：2010-07-29
申请号：US12693037
申请日：2010-01-25
申请人： Hideomi SUZAWA , Takafumi MIZOGUCHI , Koji DAIRIKI , Mayumi MIKAMI , Yumiko SAITO
发明人： Hideomi SUZAWA , Takafumi MIZOGUCHI , Koji DAIRIKI , Mayumi MIKAMI , Yumiko SAITO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214
摘要： To provide a method for manufacturing a thin film transistor and a display device using a small number of masks, a thin film transistor is manufactured in such a manner that a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked; then, a resist mask is formed thereover; first etching is performed to form a thin-film stack body; second etching in which the first conductive film is side-etched is performed by dry-etching to form a gate electrode layer; and a source electrode, a drain electrode, and the like are formed. Before the dry etching, it is preferred that at least a side surface of the etched semiconductor film be oxidized.
摘要翻译：为了提供制造薄膜晶体管的方法和使用少量掩模的显示装置，制造薄膜晶体管，使得第一导电膜，绝缘膜，半导体膜，杂质半导体膜，并且第二导电膜被堆叠; 然后在其上形成抗蚀剂掩模; 执行第一蚀刻以形成薄膜堆叠体; 通过干蚀刻进行第一导电膜被侧蚀刻的第二蚀刻，以形成栅电极层; 并且形成源电极，漏电极等。在干蚀刻之前，优选地，蚀刻的半导体膜的至少一个侧表面被氧化。

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