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21. 发明授权

US08501623B2 Method of forming a semiconductor device having a metal silicide and alloy layers as electrode 有权
标题翻译：形成具有金属硅化物和合金层作为电极的半导体器件的方法
公开(公告)号：US08501623B2
公开(公告)日：2013-08-06
申请号：US12841430
申请日：2010-07-22
申请人： Gyuhwan Oh , Young-Lim Park , Soonoh Park , Dongho Ahn , Jinil Lee
发明人： Gyuhwan Oh , Young-Lim Park , Soonoh Park , Dongho Ahn , Jinil Lee
IPC分类号： H01L21/44
CPC分类号： H01L45/06 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A semiconductor device includes an electrode having a metal silicide layer and a metal alloy layer, and a data storage element formed on the electrode. The metal silicide layer has a concave surface to correspond to a convex surface of the metal alloy layer such that the concave surface of the metal silicide layer and the convex surface of the metal alloy layer form a curved boundary.
摘要翻译：半导体器件包括具有金属硅化物层和金属合金层的电极和形成在电极上的数据存储元件。金属硅化物层具有与金属合金层的凸面对应的凹面，使得金属硅化物层的凹面和金属合金层的凸面形成弯曲的边界。

22. 发明授权

US08389408B2 Methods of forming a semiconductor device including a metal silicon nitride layer 有权
标题翻译：形成包括金属氮化硅层的半导体器件的方法
公开(公告)号：US08389408B2
公开(公告)日：2013-03-05
申请号：US12821924
申请日：2010-06-23
申请人： Young-Lim Park , Jinil Lee , Changsu Kim , Sugwoo Jung
发明人： Young-Lim Park , Jinil Lee , Changsu Kim , Sugwoo Jung
IPC分类号： H01L21/30
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45531 , H01L21/02153 , H01L21/28562 , H01L21/3141 , H01L21/76843 , H01L45/06 , H01L45/126 , H01L45/16
摘要： Provided are methods of forming a semiconductor device. The methods include providing a first precursor and a substitute gas into a reaction chamber having a substrate therein, the first precursor having a first substituent and further providing a second precursor into the reaction chamber. Either the first precursor or the second precursor includes a metal element and the other includes a silicon element, at least one of the first substituents of the first precursor are substituted with the substitute gas, the first precursor substituted with the substitute gas is adsorbed onto the substrate, and the second precursor is reacted with the adsorbed first precursor.
摘要翻译：提供了形成半导体器件的方法。所述方法包括将第一前体和替代气体提供到其中具有基底的反应室中，第一前体具有第一取代基并进一步向反应室提供第二前体。第一前体或第二前体包括金属元素，另一个包含硅元素，第一前体中的至少一个第一取代基被替代气体取代，被替代气体取代的第一前体被吸附到底物，第二前体与吸附的第一前体反应。

23. 发明授权

US08133758B2 Method of fabricating phase-change memory device having TiC layer 有权
标题翻译：具有TiC层的相变存储器件的制造方法
公开(公告)号：US08133758B2
公开(公告)日：2012-03-13
申请号：US12623513
申请日：2009-11-23
申请人： Gyu-Hwan Oh , Young-Lim Park , Soon-Oh Park , Jin-Il Lee , Chang-Su Kim
发明人： Gyu-Hwan Oh , Young-Lim Park , Soon-Oh Park , Jin-Il Lee , Chang-Su Kim
IPC分类号： H01L21/00
CPC分类号： H01L45/124 , C23C16/32 , C23C16/45523 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1666
摘要： Provided is a method of fabricating a phase-change memory device. The phase-change memory device includes a memory cell having a switching device and a phase change pattern. The method includes; forming a TiC layer on a contact electrically connecting the switching device using a plasma enhanced cyclic chemical vapor deposition (PE-cyclic CVD) process, patterning the TiC layer to form a lower electrode on the contact, and forming the phase-change pattern on the lower electrode.
摘要翻译：提供一种制造相变存储器件的方法。相变存储器件包括具有开关器件和相变模式的存储器单元。该方法包括：在使用等离子体增强循环化学气相沉积（PE循环CVD）工艺电连接开关装置的触点上形成TiC层，图案化TiC层以在触点上形成下电极，并在下电极。

24. 发明申请

US20110180774A1 Phase Change Memory Device 有权
标题翻译：相变存储器件
公开(公告)号：US20110180774A1
公开(公告)日：2011-07-28
申请号：US13082557
申请日：2011-04-08
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

25. 发明申请

US20110124174A1 METHOD OF FORMING VARIABLE RESISTANCE MEMORY DEVICE 有权
标题翻译：形成可变电阻存储器件的方法
公开(公告)号：US20110124174A1
公开(公告)日：2011-05-26
申请号：US12953945
申请日：2010-11-24
申请人： Young-Lim Park , Jinil Lee , Dongho Ahn , Sihyung Lee , Gyuhwan Oh
发明人： Young-Lim Park , Jinil Lee , Dongho Ahn , Sihyung Lee , Gyuhwan Oh
IPC分类号： H01L21/285
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/16
摘要： Provided are a method of forming an electrode of a variable resistance memory device and a variable resistance semiconductor memory device using the method. The method includes: forming a heat electrode; forming a variable resistance material layer on the heat electrode; and forming a top electrode on the variable resistance material layer, wherein the heat electrode includes a nitride of a metal whose atomic radius is greater than that of titanium (Ti) and is formed through a thermal chemical vapor deposition (CVD) method without using plasma.
摘要翻译：提供了使用该方法形成可变电阻存储器件的电极和可变电阻半导体存储器件的方法。该方法包括：形成热电极; 在所述加热电极上形成可变电阻材料层; 以及在所述可变电阻材料层上形成顶部电极，其中所述热电极包括原子半径大于钛（Ti）的金属的氮化物，并且通过热化学气相沉积（CVD）方法形成而不使用等离子体。

26. 发明授权

US07867880B2 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors 有权
标题翻译：用于低温沉积的金属前体和形成金属薄层的方法，以及使用金属前体制造相变存储器件
公开(公告)号：US07867880B2
公开(公告)日：2011-01-11
申请号：US11772494
申请日：2007-07-02
申请人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
发明人： Hye-young Park , Sung-lae Cho , Byoung-jae Bae , Jin-il Lee , Ji-eun Lim , Young-lim Park
IPC分类号： H01L21/205
CPC分类号： H01L45/1233 , C07F7/30 , C23C16/18 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1683 , Y10T428/31678
摘要： The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要翻译：本发明提供用于低温沉积的金属前体。金属前体包括金属环化合物，其包含至少一种金属作为形成环的多个元素之一。还提供了形成金属薄层的方法和制造包括使用金属前体的相变存储器件。

27. 发明授权

US07807497B2 Phase-change material layers, methods of forming the same, phase-change memory devices having the same, and methods of forming phase-change memory devices 失效
标题翻译：相变材料层，其形成方法，具有该相变材料层的相变存储器件，以及形成相变存储器件的方法
公开(公告)号：US07807497B2
公开(公告)日：2010-10-05
申请号：US11826048
申请日：2007-07-12
申请人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
发明人： Jin-II Lee , Sung-Lae Cho , Young-Lim Park , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： C23C16/45523 , C23C16/305 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675 , H01L45/1683
摘要： Example embodiments may provide phase-change material layers and a method of forming a phase-change material layer and devices using the same by generating a plasma including helium and/or argon in a reaction chamber, forming a first material layer on the object by introducing a first source gas including a first material, forming a first composite material layer on the object by introducing a second source gas including a second material into the reaction chamber, forming a third material layer on the first composite material layer by introducing a third source gas including a third material, and forming a second composite material layer on the first composite material layer by introducing a fourth source gas including a fourth material. Example embodiment phase-change material layers including carbon may be more easily and/or quickly formed at lower temperatures under the helium/argon plasma environment by providing the source gases for various feeding times. Example embodiments may also include memory devices using phase-change memory layers.
摘要翻译：示例性实施例可以提供相变材料层以及通过在反应室中产生包括氦和/或氩的等离子体来形成相变材料层的方法和使用该相变材料层的装置，通过引入在物体上形成第一材料层包括第一材料的第一源气体，通过将包括第二材料的第二源气体引入反应室，在物体上形成第一复合材料层，通过引入第三源气体在第一复合材料层上形成第三材料层包括第三材料，并且通过引入包括第四材料的第四源气体，在所述第一复合材料层上形成第二复合材料层。示例性实施例包括碳的相变材料层可以在较低温度下在氦/氩等离子体环境下更容易地和/或快速地形成，方法是提供用于各种进料时间的源气体。示例性实施例还可以包括使用相变存储器层的存储器件。

28. 发明申请

US20090017577A1 Methods of Forming Phase Change Memory Devices Having Bottom Electrodes 有权
标题翻译：形成具有底部电极的相变存储器件的方法
公开(公告)号：US20090017577A1
公开(公告)日：2009-01-15
申请号：US12170038
申请日：2008-07-09
申请人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
发明人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/141 , H01L45/16 , Y10S438/90
摘要： Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.
摘要翻译：相变存储器件可以在衬底上具有底部图案。线形或L形底部电极可以形成为与衬底上的相应底部图案接触并且具有由衬底上沿x和y轴方向的尺寸限定的顶表面。沿着底部电极的顶表面的x轴的尺寸比用于制造相变存储器件的光刻工艺的分辨率极限具有更小的宽度。相变图案可以形成为与底部电极的顶表面接触以具有比底部电极的顶表面的x和y轴方向上的每个尺寸更大的宽度，并且顶部电极可以形成在相位上其中线形或L形表示底部电极在x轴方向上的截面线形状或截面L形。

29. 发明申请

US20080308785A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：相变存储器件及其形成方法
公开(公告)号：US20080308785A1
公开(公告)日：2008-12-18
申请号：US12136176
申请日：2008-06-10
申请人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
发明人： Young-Lim Park , Sung-Lae Cho , Byoung-Jae Bae , Jin-Il Lee , Hye-Young Park
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , C23C16/34 , C23C16/45536 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/126 , H01L45/143 , H01L45/1616 , H01L45/1683
摘要： Provided are a phase change memory device and a method for forming the phase change memory device. The method includes forming a phase change material layer by providing reactive radicals to a substrate. The reactive radicals may comprise precursors for a phase change material and nitrogen.
摘要翻译：提供了一种相变存储器件和用于形成相变存储器件的方法。该方法包括通过向基底提供反应性基团来形成相变材料层。反应性基团可以包括相变材料和氮的前体。

30. 发明申请

US20080096386A1 METHOD OF FORMING A PHASE-CHANGEABLE LAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE USING THE SAME 审中-公开
标题翻译：形成相变层的方法及使用其制造半导体存储器件的方法
公开(公告)号：US20080096386A1
公开(公告)日：2008-04-24
申请号：US11876631
申请日：2007-10-22
申请人： Young-Lim PARK , Sung-Lae CHO , Byoung-Jae BAE , Jin-Il LEE , Hye-Young PARK , Ji-Eun LIM
发明人： Young-Lim PARK , Sung-Lae CHO , Byoung-Jae BAE , Jin-Il LEE , Hye-Young PARK , Ji-Eun LIM
IPC分类号： H01L21/02
CPC分类号： H01L27/2436 , C23C16/305 , C23C16/45525 , C23C16/45538 , C23C16/45553 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1675
摘要： A phase-changeable layer and a method of forming the same are disclosed. In the method, a first hydrogen gas is introduced into a reaction chamber into which a substrate is loaded at a first flow rate to form first plasma. A primary cyclic CVD process is carried out using precursors in the reaction chamber to form a lower phase-changeable layer having a first grain size on the substrate. A second hydrogen gas is introduced into the reaction chamber at a second flow rate less than the first flow rate to form second plasma. A secondary cyclic CVD process is carried out using the precursors in the reaction chamber to form an upper phase-changeable layer having a second grain size smaller than the first grain size on the substrate, thereby forming a phase-changeable layer. Thus, the phase-changeable layer may have strong adhesion strength with respect to a lower layer and good electrical characteristics.
摘要翻译：公开了一种相变层及其形成方法。在该方法中，将第一氢气引入反应室中，以第一流速将载体加载到反应室中以形成第一等离子体。使用反应室中的前体进行初级循环CVD工艺，以在衬底上形成具有第一晶粒尺寸的下相变层。将第二氢气以小于第一流量的第二流量引入反应室中以形成第二等离子体。使用反应室中的前体进行二次循环CVD工艺，以形成具有比基板上的第一晶粒尺寸小的第二晶粒尺寸的上相变层，从而形成相变层。因此，相变层可以具有相对于较低层的强粘合强度和良好的电特性。

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