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    • 21. 发明授权
    • Image sensor and method of making
    • 图像传感器及其制作方法
    • US4698494A
    • 1987-10-06
    • US871509
    • 1986-06-06
    • Toshiaki KatoMasakazu UenoMasaharu Nishiura
    • Toshiaki KatoMasakazu UenoMasaharu Nishiura
    • H01L27/146H01L31/0224H01L31/09H01L31/105H01L31/20H01L27/14
    • H01L27/14665H01L31/0224H01L31/095H01L31/1055H01L31/202Y02E10/50Y02P70/521
    • The invention provides a contact image sensor in which a common electrode is provided so as to oppose a plurality of individual electrodes arranged on a substrate across a photoconductive semiconductor film, characterized in that each of the individual electrodes is in contact with the semiconductor film through a window provided at a predetermined position in an insulating film. The insulating film can be made of a photosensitive resin, in which case the windows are formed by light exposure and development. Preferably, the insulating film is baked at an elevated temperature to purge impurities therefrom. The invention also provides image sensors in which the common electrode layer is made of an electrically conductive resin. Such resin electrodes overcome short-circuiting problems due to pinhole defects in the semiconductor film and can be used in known image sensor structures or in concert with the novel image sensor structure of the invention wherein the individual electrodes contact the semiconductor film through a window in an insulating layer.
    • 本发明提供了一种接触图像传感器,其中提供公共电极以与跨过光电导半导体膜布置在基板上的多个单独电极相对,其特征在于,各个电极通过一个 窗口设置在绝缘膜中的预定位置。 绝缘膜可以由光敏树脂制成,在这种情况下,通过曝光和显影形成窗户。 优选地,在升高的温度下烘烤绝缘膜以从其中清除杂质。 本发明还提供了图像传感器,其中公共电极层由导电树脂制成。 这种树脂电极克服了由于半导体膜中的针孔缺陷引起的短路问题,并且可以用于已知的图像传感器结构或与本发明的新型图像传感器结构一致,其中各个电极通过窗口接触半导体膜 绝缘层。
    • 25. 发明授权
    • Half precast slab and method for structuring half precast slab
    • 半预制板和构造半预制板的方法
    • US08375676B2
    • 2013-02-19
    • US12950135
    • 2010-11-19
    • Takeo TakakuraSatoru TanakaYumi TanakaToshiaki KatoNaoyuki KitaNobuyuki Kawabata
    • Takeo TakakuraSatoru TanakaYumi TanakaToshiaki KatoNaoyuki KitaNobuyuki Kawabata
    • E04C2/04
    • E04B5/40E04B5/36E04B5/38
    • Providing a half precast slab even in a case where the thickness of the slab in the site condition is too thick to apply conventional precast construction techniques. A half precast slab including a plurality of floor concrete form members and, each floor concrete form member being provided with: a bottom slab of a long length, in response to the floor concrete form member; a pair of side walls installed upright along each longitudinal edge of the bottom slab, in response to the floor concrete form member; thereby, each floor concrete form member is arranged so as to be parallel to each other and be tightly connected to the adjacent floor concrete form member, along the direction perpendicular to the longitudinal direction of each floor concrete form member; the height of the side walls other than the side walls on the most outer edge sides of the whole floor concrete form members is set at a common height that is smaller than the height of the side walls on the most outer edge sides.
    • 即使在现场条件下的板坯的厚度太厚而不能应用常规的预制构造技术的情况下,也提供半预制板坯。 包括多个地板混凝土模板构件的半预制板,并且每个地板混凝土模板构件设置有:响应于地板混凝土模板构件长长的底板; 响应于地板混凝土形式构件,沿着底板的每个纵向边缘竖立安装的一对侧壁; 由此,每个地板混凝土模板构件被布置成彼此平行,并且沿垂直于每个地板混凝土构件的纵向的方向紧密地连接到相邻的地板混凝土模板构件; 除了整个地板混凝土构件的最外侧边缘的侧壁以外的侧壁的高度被设定为比最外边缘侧的侧壁的高度小的公共高度。
    • 26. 发明申请
    • Method of measuring contact resistance of probe and method of testing semiconductor device
    • 测量探头接触电阻的方法和半导体器件测试方法
    • US20050258835A1
    • 2005-11-24
    • US11165216
    • 2005-06-24
    • Masakatsu SaijyoToshiaki Kato
    • Masakatsu SaijyoToshiaki Kato
    • G01R31/26G01R1/06G01R1/073G01R3/00H01L21/66G01R31/00G01R31/02
    • G01R3/00
    • A measuring method of the contact resistance of a probe includes bringing a plurality of probes including a first and second probes into contact with a plurality of electrode pads that is disposed on a semiconductor device to be electrically tested and connected each other with a conductive wiring; connecting a power supply to at least one predetermined first probe of the plurality of probes and supplying a current or a voltage from the first probe through the electrode pad and the wiring to the second probe to the semiconductor device; measuring the contact resistance between the electrode pad and the probe based on the current or the voltage supplied to the semiconductor device; judging whether the measured contact resistance is equal to or more than a predetermined value or not; and when the contact resistance is equal to or more than the predetermined value, the probes are cleansed.
    • 探针的接触电阻的测量方法包括使包括第一和第二探针的多个探针与设置在半导体器件上的多个电极焊盘接触以进行电测试并且用导电布线彼此连接; 将电源连接到所述多个探针中的至少一个预定的第一探​​针,并将来自所述第一探针的电流或电压通过所述电极焊盘和所述布线提供给所述半导体器件; 基于提供给半导体器件的电流或电压来测量电极焊盘和探针之间的接触电阻; 判断测量的接触电阻是否等于或大于预定值; 并且当接触电阻等于或大于预定值时,探针被清洁。
    • 28. 发明授权
    • Contact type image sensor
    • 接触式图像传感器
    • US4855802A
    • 1989-08-08
    • US111520
    • 1987-10-20
    • Toshiaki Kato
    • Toshiaki Kato
    • H01L27/146
    • H01L27/14665
    • Image sensors for use in facsimile machines and the like are formed in which an insulating film is interposed between the semiconductor film and the individual electrode contacts. When the image sensor is of the type having individual electrodes on the surface of an insulating substrate, and a common electrode on a surface of the semiconductor film away from the substrate, the insulating film is formed such that an opening exists over a consistent portion of each individual electrode through which the photoelectric conversion semiconductor film makes contact with the individual electrodes. The interposition of the insulating film keeps the semiconductor film from coming in contact directly with the insulating substrate, thus no impurity can diffuse from the substrate to the semiconductor film. Furthermore, satisfactory adhesion between the semiconductor film and the insulating film, and between the insulating film and the substrate, results in satisfactory adhesion between the semiconductor film and the substrate.
    • 形成用于传真机等的图像传感器,其中在半导体膜和各个电极触点之间插入绝缘膜。 当图像传感器是在绝缘基板的表面上具有单独电极的类型和在半导体膜的远离基板的表面上的公共电极时,绝缘膜形成为使得开口存在于 每个单独的电极,光电转换半导体膜通过该电极与各个电极接触。 绝缘膜的插入使得半导体膜不与绝缘基板直接接触,因此不会使杂质从基板扩散到半导体膜。 此外,半导体膜和绝缘膜之间以及绝缘膜和衬底之间的令人满意的粘附性导致半导体膜和衬底之间的令人满意的粘附。