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21. 发明申请

US20060192195A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060192195A1
公开(公告)日：2006-08-31
申请号：US10564404
申请日：2004-10-13
申请人： Suk-Hun Lee
发明人： Suk-Hun Lee
IPC分类号： H01L31/109
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/04 , H01L33/32
摘要： A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure layer formed above the n-type nitride semiconductor layer; a first electrode contact layer formed above the super lattice structure layer; a first cluster layer formed above the first electrode contact layer; a first In-containing nitride gallium layer formed above the first cluster layer; a second cluster layer formed above the first In-containing nitride gallium layer; an active layer formed above the second cluster layer, for emitting light; a p-type nitride semiconductor layer formed above the active layer; and a second electrode contact layer formed above the p-type nitride semiconductor layer.
摘要翻译：提供一种氮化物半导体发光器件。氮化物半导体发光器件包括：n型氮化物半导体层; 形成在n型氮化物半导体层上方的超晶格结构层; 在超晶格结构层上形成的第一电极接触层; 形成在所述第一电极接触层上方的第一簇层; 形成在所述第一簇层之上的第一含In氮化物镓层; 形成在所述第一含In氮化物镓层之上的第二簇层; 形成在第二簇层上方的用于发光的有源层; 在有源层上形成的p型氮化物半导体层; 以及形成在p型氮化物半导体层上方的第二电极接触层。

22. 发明授权

US08053794B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08053794B2
公开(公告)日：2011-11-08
申请号：US11661186
申请日：2005-08-19
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/025 , H01L33/26
摘要： A nitride semiconductor light-emitting device according to the present invention comprises a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer having AlIn, which is formed on the second nitride semiconductor layer. And a nitride semiconductor light-emitting device comprises a first nitride semiconductor layer; an n-AlInN cladding layer formed on the first nitride semiconductor layer; an n-InGaN layer formed on the n-AlInN cladding layer; an active layer formed on the n-InGaN layer; a p-InGaN layer formed on the active layer; a p-AlInN cladding layer formed on the p-InGaN layer; and a second nitride semiconductor layer formed on the p-AlInN cladding layer.
摘要翻译：根据本发明的氮化物半导体发光器件包括第一氮化物半导体层; 形成在所述第一氮化物半导体层上的有源层; 形成在所述有源层上的第二氮化物半导体层; 和具有AlIn的第三氮化物半导体层，其形成在第二氮化物半导体层上。并且氮化物半导体发光器件包括第一氮化物半导体层; 形成在所述第一氮化物半导体层上的n-AlInN覆层; 形成在n-AlInN覆层上的n-InGaN层; 形成在n-InGaN层上的有源层; 形成在有源层上的p-InGaN层; 形成在p-InGaN层上的p-AlInN覆层; 以及形成在p-AlInN包覆层上的第二氮化物半导体层。

23. 发明授权

US08030679B2 Nitride semiconductor light emitting device and fabrication method therefor 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08030679B2
公开(公告)日：2011-10-04
申请号：US11577528
申请日：2005-10-06
申请人： Hyo Kun Son , Suk Hun Lee
发明人： Hyo Kun Son , Suk Hun Lee
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer formed above the In-doped nitride semiconductor layer; an active layer formed above the first electrode contact layer; and a p-type nitride semiconductor layer formed above the active layer. According to the nitride semiconductor light emitting device, a crystal defect of the active layer is suppressed, so that the reliability of the nitride semiconductor light emitting device is increased and the light output is enhanced.
摘要翻译：公开了一种氮化物半导体发光器件，包括：一个或多个AllnN层; 在AllN层上形成的In掺杂氮化物半导体层; 在所述In掺杂氮化物半导体层上形成的第一电极接触层; 形成在所述第一电极接触层上方的有源层; 以及形成在有源层上方的p型氮化物半导体层。根据氮化物半导体发光器件，抑制了有源层的晶体缺陷，从而提高了氮化物半导体发光器件的可靠性，并提高了光输出。

24. 发明授权

US07902561B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07902561B2
公开(公告)日：2011-03-08
申请号：US11722658
申请日：2005-12-05
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/04
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.
摘要翻译：本发明涉及一种氮化物半导体发光器件，包括：具有AlGaN / n-GaN或AlGaN / GaN / n-GaN的超晶格结构的第一氮化物半导体层; 形成在所述第一氮化物半导体层上以发光的有源层; 形成在所述有源层上的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。根据本发明，活性层的结晶度提高，光功率和可靠性也得到提高。

25. 发明申请

US20090072252A1 Nitride Semiconductor Light Emitting Device and Fabrication Method Therefor 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20090072252A1
公开(公告)日：2009-03-19
申请号：US11577528
申请日：2005-10-06
申请人： Hyo Kun Son , Suk Hun Lee
发明人： Hyo Kun Son , Suk Hun Lee
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/04 , H01L33/12 , H01L33/32
摘要： Disclosed is a nitride semiconductor light emitting device including: one or more AllnN layers; an In-doped nitride semiconductor layer formed above the AllN layers; a first electrode contact layer formed above the In-doped nitride semiconductor layer; an active layer formed above the first electrode contact layer; and a p-type nitride semiconductor layer formed above the active layer. According to the nitride semiconductor light emitting device, a crystal defect of the active layer is suppressed, so that the reliability of the nitride semiconductor light emitting device is increased and the light output is enhanced.
摘要翻译：公开了一种氮化物半导体发光器件，包括：一个或多个AllnN层; 在AllN层上形成的In掺杂氮化物半导体层; 在所述In掺杂氮化物半导体层上形成的第一电极接触层; 形成在所述第一电极接触层上方的有源层; 以及形成在有源层上方的p型氮化物半导体层。根据氮化物半导体发光器件，抑制了有源层的晶体缺陷，使得氮化物半导体发光器件的可靠性增加，并且光输出增强。

26. 发明授权

US07368309B2 Nitride semiconductor and fabrication method thereof 有权
标题翻译：氮化物半导体及其制造方法
公开(公告)号：US07368309B2
公开(公告)日：2008-05-06
申请号：US10516742
申请日：2003-08-19
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/02507 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/2003 , H01L29/207 , H01L29/7783 , H01L29/812 , H01L33/007 , H01L33/04 , H01L33/12
摘要： The present invention relates to nitride semiconductor, and more particularly, to GaN-based nitride semiconductor and fabrication method thereof. The nitride semiconductor according to the present invention comprises a substrate; a GaN-based buffer layer formed in any one of a group of three-layered structure AlyInxGa1−(x+y)N/InxGa1−xN/GaN where 0≦x≦1 and 0≦y≦1, two-layered structure InxGa1−xN/GaN where 0≦x≦1 and superlattice structure of InxGa1−xN/GaN where 0≦x≦1; and a GaN-based single crystalline layer.
摘要翻译：本发明涉及氮化物半导体，更具体地涉及GaN基氮化物半导体及其制造方法。根据本发明的氮化物半导体包括基板; 以三层结构的一组三层结构中的任何一个形成的GaN基缓冲层，其中，其中0 <= x <= 1且0 <= y <= 1，两层结构在_{其中0 <= x <= 1，并且In 1 x x Ga 1-x N的超晶格结构，其中0 <= x <= 1; 和GaN基单晶层。}

27. 发明申请

US20120313109A1 Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20120313109A1
公开(公告)日：2012-12-13
申请号：US13585451
申请日：2012-08-14
申请人： Suk Hun LEE
发明人： Suk Hun LEE
IPC分类号： H01L33/32
CPC分类号： H01L33/14 , H01L27/15 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/305 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced.
摘要翻译：提供一种氮化物半导体发光器件，包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上方的有源层; 以及形成在有源层上方的δ掺杂的第二氮化物半导体层。根据本发明，提高了氮化物半导体发光元件的光功率，提高了光功率降低现象，提高了ESD（静电放电）的可靠性。

28. 发明授权

US08222654B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08222654B2
公开(公告)日：2012-07-17
申请号：US11719932
申请日：2005-12-05
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/20
CPC分类号： H01L33/007 , H01L33/12
摘要： The present invention relates to a nitride semiconductor light emitting device including: a substrate having a predetermined pattern formed on a surface thereof by an etch; a protruded portion disposed on a non-etched region of the substrate, and having a first buffer layer and a first nitride semiconductor layer stacked thereon; a second buffer layer formed on the etched region of the substrate; a second nitride semiconductor layer formed on the second buffer layer and the protruded portion; a third nitride semiconductor layer formed on the second nitride semiconductor layer; an active layer formed on the third nitride semiconductor layer to emit light; and a fourth nitride semiconductor layer formed on the active layer. According to the present invention, the optical extraction efficiency of the nitride semiconductor light emitting device can be enhanced.
摘要翻译：本发明涉及一种氮化物半导体发光器件，包括：具有通过蚀刻形成在其表面上的预定图案的衬底; 突出部，设置在所述基板的未蚀刻区域上，并且具有堆叠在其上的第一缓冲层和第一氮化物半导体层; 形成在所述基板的所述蚀刻区域上的第二缓冲层; 形成在第二缓冲层和突出部分上的第二氮化物半导体层; 形成在所述第二氮化物半导体层上的第三氮化物半导体层; 形成在所述第三氮化物半导体层上以发光的有源层; 以及形成在所述有源层上的第四氮化物半导体层。根据本发明，能够提高氮化物半导体发光元件的光学提取效率。

29. 发明授权

US08193545B2 Nitride semiconductor light emitting device and fabrication method thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US08193545B2
公开(公告)日：2012-06-05
申请号：US12871628
申请日：2010-08-30
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： H01L33/32 , H01L33/02 , H01L33/025 , H01L33/06 , H01L33/26
摘要： A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1−xN layer on the first electrode layer, forming on the first InxGa1−xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer.
摘要翻译：氮化物半导体发光器件包括第一氮化物半导体层，形成在第一氮化物半导体层上并包括InGaN阱层和多层势垒层的单个或多个量子阱结构的有源层和形成的第二氮化物半导体层在活动层。氮化物半导体发光器件的制造方法包括：在衬底上形成缓冲层，在缓冲层上形成GaN层，在GaN层上形成第一电极层，在第一电极层上形成In x Ga 1-x N层在第一In x Ga 1-x N层上形成包括InGaN阱层的有源层和用于发光的多层势垒层，在有源层上形成p-GaN层，并在p-GaN层上形成第二电极层。

30. 发明申请

US20110318857A1 Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20110318857A1
公开(公告)日：2011-12-29
申请号：US13219118
申请日：2011-08-26
申请人： Suk Hun Lee
发明人： Suk Hun Lee
IPC分类号： H01L33/02
CPC分类号： H01L33/12 , H01L33/007
摘要： Provided is a nitride semiconductor light emitting device including: a substrate; a first buffer layer formed above the substrate; an indium-containing second buffer layer formed above the first buffer layer; an indium-containing third buffer layer formed above the second buffer layer; a first nitride semiconductor layer formed above the third buffer layer; an active layer formed above the first nitride semiconductor layer; and a second nitride semiconductor layer formed above the active layer. According to the present invention, the crystal defects are further suppressed, so that the crystallinity of the active layer is enhanced, and the optical power and the operation reliability are enhanced.
摘要翻译：提供一种氮化物半导体发光器件，包括：衬底; 形成在所述衬底上的第一缓冲层; 形成在所述第一缓冲层上方的含铟的第二缓冲层; 形成在所述第二缓冲层上方的含铟的第三缓冲层; 形成在第三缓冲层之上的第一氮化物半导体层; 形成在所述第一氮化物半导体层上方的有源层; 以及形成在有源层上方的第二氮化物半导体层。根据本发明，进一步抑制了晶体缺陷，从而提高了有源层的结晶度，提高了光功率和操作可靠性。

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