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21. 发明申请

US20120228622A1 LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THEREOF AND ELECTRONIC APPLIANCE 有权
标题翻译：发光装置，其制造方法和电子设备
公开(公告)号：US20120228622A1
公开(公告)日：2012-09-13
申请号：US13478659
申请日：2012-05-23
申请人： Satoshi MURAKAMI , Masayuki SAKAKURA
发明人： Satoshi MURAKAMI , Masayuki SAKAKURA
IPC分类号： H01L29/786
CPC分类号： H01L51/5246 , H01L27/3244 , H01L27/3276 , H01L2251/566
摘要： An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor.
摘要翻译：本发明的目的是提供一种制造发光器件的方法，该发光器件能够减少在制造发光器件时引起的静电电荷引起的元件的劣化。本发明的另一个目的是提供一种发光装置，其中由静电引起的元件的劣化导致的缺陷减少。制造发光器件的方法包括形成用于驱动发光元件的顶栅型晶体管的步骤。在形成顶栅型晶体管的步骤中，当处理半导体层时，在衬底上形成以行和列延伸的第一栅格状半导体层。多个第二岛状半导体层形成在第一半导体层之间。多个第二岛状第二半导体层用作晶体管的有源层。

22. 发明申请

US20120126641A1 STATOR COOLING DEVICE 有权
标题翻译：定子冷却装置
公开(公告)号：US20120126641A1
公开(公告)日：2012-05-24
申请号：US13282925
申请日：2011-10-27
申请人： Satoshi MURAKAMI
发明人： Satoshi MURAKAMI
IPC分类号： H02K9/19
CPC分类号： H02K9/19 , H02K1/185 , H02K5/20
摘要： A stator cooling device configured with a cylindrical stator main body that uses a rotation axis of a rotary electric machine as a central axis. A fixed portion is formed on an outer peripheral portion of the stator main body so as to protrude outward in a radial direction of the stator main body. A cooling medium flow passage includes an injection hole through which cooling medium is injected. The fixed portion is configured above a horizontal plane that passes through the central axis, and a peak portion that is farthest in the fixed portion from the central axis as viewed in an axial direction of the central axis. The injection hole opens toward the fixed portion above the outer peripheral portion of the stator and toward the first vertical plane side with respect to a second vertical plane that is a vertical plane that passes through the peak portion.
摘要翻译：一种定子冷却装置，其构造为使用旋转电机的旋转轴线作为中心轴的圆柱形定子主体。固定部分形成在定子主体的外周部上，以便在定子主体的径向方向上向外突出。冷却介质流路包括注入冷却介质的注入孔。固定部分配置在穿过中心轴线的水平平面上方，以及在中心轴线方向上从固定部分离中心轴线最远的峰部分。喷射孔相对于穿过峰部的垂直平面的第二垂直平面朝向定子的外周部上方的固定部朝向第一垂直面侧开口。

23. 发明授权

US08143627B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08143627B2
公开(公告)日：2012-03-27
申请号：US12822260
申请日：2010-06-24
申请人： Satoshi Murakami , Yosuke Tsukamoto , Tomoaki Atsumi , Masayuki Sakakura
发明人： Satoshi Murakami , Yosuke Tsukamoto , Tomoaki Atsumi , Masayuki Sakakura
IPC分类号： H01L33/00
CPC分类号： H01L29/04 , G02F1/13454 , G02F1/136204 , H01L27/12 , H01L27/1214 , H01L27/124
摘要： In manufacturing a semiconductor device, static electricity is generated while contact holes are formed in an interlayer insulating film by dry etching. Damage to a pixel region or a driving circuit region due to travel of the static electricity generated is prevented. Gate signal lines are spaced apart from each other above a crystalline semiconductor film. Therefore a first protective circuit is not electrically connected when contact holes are opened in an interlayer insulating film. The static electricity generated during dry etching for opening the contact holes moves from the gate signal line, damages a gate insulating film, passes the crystalline semiconductor film, and again damages the gate insulating film before it reaches the gate signal line. As the static electricity generated during the dry etching damages the first protective circuit, the energy of the static electricity is reduced until it loses the capacity of damaging a driving circuit TFT. The driving circuit TFT is thus prevented from suffering electrostatic discharge damage.
摘要翻译：在制造半导体器件时，通过干蚀刻在层间绝缘膜中形成接触孔时产生静电。防止了由于所产生的静电的行进而对像素区域或驱动电路区域的损害。栅极信号线在结晶半导体膜之上彼此间隔开。因此，当在层间绝缘膜中打开接触孔时，第一保护电路不电连接。在干蚀刻期间产生的用于打开接触孔的静电从栅极信号线移动，损坏栅极绝缘膜，通过晶体半导体膜，并且在栅极绝缘膜到达栅极信号线之前再次损坏栅极绝缘膜。由于在干蚀刻期间产生的静电损害第一保护电路，所以静电的能量减小，直到损失驱动电路TFT的能力。从而防止了驱动电路TFT遭受静电放电损坏。

24. 发明申请

US20110254009A1 Semiconductor Device and the Fabricating Method Thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110254009A1
公开(公告)日：2011-10-20
申请号：US13169256
申请日：2011-06-27
申请人： Hisashi Ohtani , Misako Nakazawa , Satoshi Murakami , Etsuko Fujimoto
发明人： Hisashi Ohtani , Misako Nakazawa , Satoshi Murakami , Etsuko Fujimoto
IPC分类号： H01L29/786 , H01L29/04
CPC分类号： H01L21/76885 , G02F1/136227 , H01L21/76802 , H01L21/76838 , H01L27/124 , H01L27/1248 , H01L27/1255 , H01L29/41733 , H01L29/458 , H01L29/78636 , H01L2924/0002 , H01L2924/00
摘要： The object is to pattern extremely fine integrated circuits by forming fine contact holes. The dry etching method is employed to form contact holes to pattern a wiring (114), using a mask made of metallic film (112) and an organic material as an inter-layer insulating film (111) for covering switching elements and each of the wirings.
摘要翻译：目的是通过形成精细的接触孔来模拟非常精细的集成电路。采用干蚀刻方法，使用由金属膜（112）制成的掩模和有机材料作为覆盖开关元件的层间绝缘膜（111）形成用于对布线（114）进行图案化的接触孔，并且每个布线。

25. 发明授权

US08022404B2 Luminescent device and process of manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US08022404B2
公开(公告)日：2011-09-20
申请号：US12213136
申请日：2008-06-16
申请人： Satoshi Murakami , Mitsuhiro Ichijo , Taketomi Asami
发明人： Satoshi Murakami , Mitsuhiro Ichijo , Taketomi Asami
IPC分类号： H01L29/04
CPC分类号： H01L27/3258 , H01L21/7684 , H01L21/76841 , H01L27/12 , H01L27/1214 , H01L27/1248 , H01L27/1251 , H01L27/1255 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L33/0041 , H01L51/5221 , H01L51/5253 , H01L2227/323 , H01L2924/0002 , H01L2924/00
摘要： In the case where a material containing an alkaline-earth metal in a cathode, is used, there is a fear of the diffusion of an impurity ion (such as alkaline-earth metal ion) from the EL element to the TFT being generated and causing the variation of characteristics of the TFT. Therefore, as the insulating film provided between TFT and EL element, a film containing a material for not only blocking the diffusion of an impurity ion such as an alkaline-earth metal ion but also aggressively absorbing an impurity ion such as an alkaline-earth metal ion is used.
摘要翻译：在使用阴极中含有碱土类金属的材料的情况下，担心从EL元件向所产生的TFT扩散杂质离子（如碱土类金属离子）扩散至产生的TFT TFT的特性变化。因此，作为设置在TFT和EL元件之间的绝缘膜，含有不仅阻挡诸如碱土金属离子等杂质离子扩散的材料的膜，而且还积极地吸收杂质离子如碱土金属离子。

26. 发明授权

US08008666B2 Semiconductor display device 有权
标题翻译：半导体显示装置
公开(公告)号：US08008666B2
公开(公告)日：2011-08-30
申请号：US12711611
申请日：2010-02-24
申请人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame
发明人： Shunpei Yamazaki , Satoshi Murakami , Masahiko Hayakawa , Kiyoshi Kato , Mitsuaki Osame
IPC分类号： H01L29/04
CPC分类号： H01L27/1248 , G02F1/136227 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/1244 , H01L27/1255 , H01L27/13 , H01L27/3246 , H01L27/3276 , H01L33/52 , H01L51/5237 , H01L51/5253
摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.
摘要翻译：本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。

27. 发明申请

US20110095312A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110095312A1
公开(公告)日：2011-04-28
申请号：US12911083
申请日：2010-10-25
申请人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osamè , Yukio Tanaka , Yoshiharu Hirakata
发明人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osamè , Yukio Tanaka , Yoshiharu Hirakata
IPC分类号： H01L27/15 , H01L29/92
CPC分类号： H01L27/1244 , G02F1/13454 , G02F1/136213 , H01L27/1255 , H01L27/1259 , H01L27/15 , H01L29/458 , H01L29/66757 , H01L29/786 , H01L29/78645 , H01L29/78675 , H01L31/02164
摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.
摘要翻译：本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。由于阳极氧化膜以15V / min的单位时间的施加电压进行阳极氧化，所以在电极上没有包裹，可以防止膜剥离。

28. 发明授权

US07821065B2 Semiconductor device comprising a thin film transistor comprising a semiconductor thin film and method of manufacturing the same 有权
标题翻译：包括半导体薄膜的薄膜晶体管的半导体器件及其制造方法
公开(公告)号：US07821065B2
公开(公告)日：2010-10-26
申请号：US09516082
申请日：2000-03-01
申请人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osame , Yukio Tanaka , Yoshiharu Hirakata
发明人： Satoshi Murakami , Shunpei Yamazaki , Jun Koyama , Mitsuaki Osame , Yukio Tanaka , Yoshiharu Hirakata
IPC分类号： H01L29/04
CPC分类号： H01L27/1244 , G02F1/13454 , G02F1/136213 , H01L27/1255 , H01L27/1259 , H01L27/15 , H01L29/458 , H01L29/66757 , H01L29/786 , H01L29/78645 , H01L29/78675 , H01L31/02164
摘要： An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability.The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15 V/min, there is no wrap around on the electrode, and film peeling can be prevented.
摘要翻译：本发明的目的是提供一种具有高操作特性和可靠性的半导体器件。所采取的措施是：在有机树脂膜上包含阳极氧化膜的电极，电极的阳极氧化膜和上面的像素电极之间形成像素电容器。由于阳极氧化膜以15V / min的单位时间的施加电压进行阳极氧化，所以在电极上没有包裹，可以防止膜剥离。

29. 发明授权

US07723179B2 Light emitting device and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07723179B2
公开(公告)日：2010-05-25
申请号：US11282725
申请日：2005-11-21
申请人： Shunpei Yamazaki , Satoshi Murakami , Mitsuaki Osame
发明人： Shunpei Yamazaki , Satoshi Murakami , Mitsuaki Osame
IPC分类号： H01L21/8238
CPC分类号： H01L27/1248 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L51/5237 , H01L51/524 , H01L51/5271 , H01L2251/5315
摘要： A light emitting element containing an organic compound has a disadvantage in that it tends to be deteriorated by various factors, so that the greatest problem thereof is to increase its reliability (make longer its life span). The present invention provides a method for manufacturing an active matrix type light emitting device and the configuration of such an active matrix type light emitting device having high reliability. In the method, a contact hole extending to a source region or a drain region is formed, and then an interlayer insulation film made of a photosensitive organic insulating material is formed on an interlayer insulation film. The interlayer insulation film has a curved surface on its upper end portion. Subsequently, an interlayer insulation film provided as a silicon nitride film having a film thickness of 20 to 50 nm is formed by a sputtering method using RF power supply.
摘要翻译：含有有机化合物的发光元件的缺点在于，其倾向于因各种因素而劣化，因此其最大的问题是提高其可靠性（使其使用寿命更长）。本发明提供一种制造有源矩阵型发光器件的方法和具有高可靠性的这种有源矩阵型发光器件的结构。在该方法中，形成延伸到源区或漏区的接触孔，然后在层间绝缘膜上形成由光敏有机绝缘材料制成的层间绝缘膜。层间绝缘膜在其上端部具有弯曲表面。随后，通过使用RF电源的溅射法形成膜厚度为20至50nm的作为氮化硅膜设置的层间绝缘膜。

30. 发明授权

US07709846B2 Light emitting apparatus and method for manufacturing the same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US07709846B2
公开(公告)日：2010-05-04
申请号：US12244984
申请日：2008-10-03
申请人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
发明人： Shunpei Yamazaki , Satoshi Murakami , Masayuki Sakakura , Toru Takayama
IPC分类号： H01L29/267
CPC分类号： H01L27/3244 , H01L27/12 , H01L27/1248 , H01L27/3246 , H01L27/3258 , H01L29/16 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78675 , H01L29/78696 , H01L51/5008 , H01L51/524 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2251/566
摘要： The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.
摘要翻译：本发明的目的是提高包括TFT和有机发光元件的发光装置的可靠性。根据本发明的具有薄膜晶体管和发光元件的发光装置包括：栅电极上的第二无机绝缘层，第二无机绝缘层上的第一有机绝缘层，第一有机绝缘层上的第三无机绝缘层，形成在第三无机绝缘层上的阳极层，第二有机绝缘层与阳极层的端部重叠并且具有35度至45度的倾斜角度;形成在第二有机绝缘层的上表面和侧表面上并且在阳极层上具有开口的第四无机绝缘层，有机化合物形成为与阳极层和第四无机绝缘层接触且含有发光材料的层，以及与含有发光材料的有机化合物层接触形成的阴极层，其中第三无机绝缘层和第四无机绝缘层由氮化硅或氮化铝形成。

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