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21. 发明申请

WO2007109568A3 METHOD AND STRUCTURE FOR FABRICATING SOLAR CELLS 审中-公开
公开(公告)号：WO2007109568A3
公开(公告)日：2007-09-27
申请号：PCT/US2007/064213
申请日：2007-03-16
申请人： SILICON GENESIS CORPORATION , HENLEY, Francois, J. , ONG, Philip, James
发明人： HENLEY, Francois, J. , ONG, Philip, James
IPC分类号： H01L21/00 , H01L25/00 , H01L31/00 , H02N6/00
摘要： A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.

22. 发明申请

WO2007014320A2 METHOD AND STRUCTURE FOR FABRICATING MULTIPLE TILE REGIONS ONTO A PLATE USING A CONTROLLED CLEAVING PROCESS 审中-公开
标题翻译：使用控制清洗工艺将多个区域制成板材的方法和结构
公开(公告)号：WO2007014320A2
公开(公告)日：2007-02-01
申请号：PCT/US2006/029378
申请日：2006-07-26
申请人： SILICON GENESIS CORPORATION , HENLEY, Francois, J.
发明人： HENLEY, Francois, J.
IPC分类号： H01L21/30 , H01L21/265
CPC分类号： H01L21/2236 , H01L21/67213 , H01L21/677 , H01L21/76254 , H01L31/18
摘要： A method for manufacturing substrates using a continuous plasma immersion process. The method includes providing a movable track member. The movable track member is provided in a chamber. The chamber includes an inlet and an outlet. In a specific embodiment, the movable track member can include one or more rollers, air bearings, belt member, and/or movable beam member to provide one or more substrates for a scanning process. The method also includes providing a first substrate. The first substrate includes a first plurality of tiles. The method maintains the first substrate including the first plurality of tiles in a vacuum. The method includes transferring the first substrate including the first plurality of tiles from the inlet port onto the movable track member. The first plurality of tiles are subjected to a scanning implant process. The method also includes maintaining a second substrate including a second plurality of tiles in the vacuum. The method includes transferring the second substrate including a second plurality of tiles from the inlet port onto the movable track member. The method includes subjecting the second plurality of tiles to an implant process using the scanning implant process. In an alternate embodiment, a reusable transfer substrate member for forming a tiled substrate structure is provided. The member including a transfer substrate, which has a surface region. The surface region comprises a plurality of donor substrate regions. Each of the donor substrate regions is characterized by a donor substrate thickness and a donor substrate surface region. Each of the donor substrate regions is spatially disposed overlying the surface region of the transfer substrate. Each of the donor substrate regions has the donor substrate thickness without a definable cleave region.
摘要翻译：一种使用连续等离子体浸渍工艺制造衬底的方法。该方法包括提供可移动轨道构件。可移动轨道构件设置在腔室中。该室包括入口和出口。在具体实施例中，可移动轨道构件可以包括一个或多个辊，空气轴承，带构件和/或可移动梁构件，以提供用于扫描过程的一个或多个基板。该方法还包括提供第一衬底。第一基板包括第一多个瓦片。该方法在真空中保持包括第一多个瓦片的第一基板。该方法包括将包括第一多个瓦片的第一基底从入口转移到可移动轨道构件上。对第一多个瓷砖进行扫描注入工艺。该方法还包括在真空中维持包括第二多个瓦片的第二基板。该方法包括将包括第二多个瓦片的第二基板从入口传送到可移动轨道构件上。该方法包括使用扫描注入工艺对第二多个瓷砖进行植入工艺。在替代实施例中，提供了一种用于形成平铺的衬底结构的可重复使用的转移衬底构件。该构件包括具有表面区域的转印衬底。表面区域包括多个施主衬底区域。施主衬底区域中的每一个的特征在于施主衬底厚度和施主衬底表面区域。施主衬底区域中的每一个被空间地布置在转印衬底的表面区域上。每个施主衬底区域具有不具有可定义的切割区域的施主衬底厚度。

23. 发明申请

WO2006093817A2 SUBSTRATE STIFFNESS METHOD AND RESULTING DEVICES FOR LAYER TRANSFER PROCESSES 审中-公开
标题翻译：基层硬化方法和层转移过程的结果设备
公开(公告)号：WO2006093817A2
公开(公告)日：2006-09-08
申请号：PCT/US2006/006497
申请日：2006-02-24
申请人： SILICON GENESIS CORPORATION , HENLEY, Francois, J. , KIRK, Harry, Robert , SULLIVAN, James, Andrew
发明人： HENLEY, Francois, J. , KIRK, Harry, Robert , SULLIVAN, James, Andrew
CPC分类号： H01L21/2007 , B81C1/00357 , B81C2201/019 , H01L21/6835 , H01L21/76254 , H01L2221/68359
摘要： A multilayered substrate structure comprising one or more devices, e.g., optoelectronic, integrated circuit. The structure has a handle substrate, which is characterized by a predetermined thickness and a Young's modulus ranging from about 1 Mega Pascal to about 130 Giga Pascal. The structure also has a thickness of substantially crystalline material coupled to the handle substrate. Preferably, the thickness of substantially crystalline material ranges from about 100 microns to about 5 millimeters. The structure has a cleaved surface on the thickness of substantially crystalline material and a surface roughness characterizing the cleaved film of less than 200 Angstroms. At least one or more optoelectronic devices is provided on the thickness of material.
摘要翻译：包括一个或多个器件的多层衬底结构，例如光电集成电路。该结构具有手柄基底，其特征在于预定的厚度和约1兆帕至约130千兆帕斯卡的杨氏模量。该结构还具有耦合到处理衬底的基本上结晶材料的厚度。优选地，基本上结晶的材料的厚度范围为约100微米至约5毫米。该结构在基本上结晶的材料的厚度上具有切割的表面，并且表征切割膜的表面粗糙度小于200埃。在材料的厚度上提供至少一个或多个光电子器件。

24. 发明申请

WO2006015246A2 METHOD AND SYSTEM FOR FABRICATING STRAINED LAYERS FOR THE MANUFACTURE OF INTEGRATED CIRCUITS 审中-公开
标题翻译：用于制造集成电路的应变层的方法和系统
公开(公告)号：WO2006015246A2
公开(公告)日：2006-02-09
申请号：PCT/US2005/027050
申请日：2005-07-29
申请人： SILICON GENESIS CORPORATION , HENLEY, Francois, J. , ONG, Philip, James , MALIK, Igor, J. , KIRK, Harry, R.
发明人： HENLEY, Francois, J. , ONG, Philip, James , MALIK, Igor, J. , KIRK, Harry, R.
IPC分类号： H01L21/30
CPC分类号： H01L21/302 , H01L21/2007 , Y10T29/41
摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.
摘要翻译：一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。该方法提供具有第二厚度的第二基底，其具有面和背面。该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

25. 发明申请

WO2000045421A3 WAFER EDGE ENGINEERING METHOD AND DEVICE 审中-公开
公开(公告)号：WO2000045421A3
公开(公告)日：2000-08-03
申请号：PCT/US2000/002360
申请日：2000-01-27
申请人： SILICON GENESIS CORPORATION
发明人： HENLEY, Francois, J. , CHEUNG, Nathan, W. , EN, William, G. , MALIK, Igor, J.
IPC分类号： H01L21/304 , H01L21/306 , H01L27/12 , B05C11/02 , C23F1/00
摘要： The present invention provides an apparatus (400, 500) for ablating edge material from a substrate, e.g., SOI. The apparatus includes, among other elements, a housing and a rotatable member (401) coupled to the housing. The rotatable member is a susceptor, which is relatively flat for securing a substrate. A movable dispensing head (421) is coupled to the housing and is overlying the rotatable member. The movable dispensing head (421) is operable to emit a stream of directed fluid to one or more locations of the susceptor. The apparatus also includes a fluid source, which is coupled to the movable dispensing head. The fluid source provides fluid to ablate material from the substrate.

26. 发明授权

US10923459B2 Three dimensional integrated circuit 有权
公开(公告)号：US10923459B2
公开(公告)日：2021-02-16
申请号：US16797834
申请日：2020-02-21
申请人： Silicon Genesis Corporation
发明人： Theodore E. Fong , Michael I. Current
IPC分类号： H01L25/10 , H01L21/822 , H01L25/00 , H01L21/762 , H01L23/00 , H01L27/06
摘要： Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.

27. 发明申请

US20190326467A1 LAYER TRANSFER OF FILMS UTILIZING CONTROLLED SHEAR REGION 审中-公开
公开(公告)号：US20190326467A1
公开(公告)日：2019-10-24
申请号：US16504168
申请日：2019-07-05
申请人： Silicon Genesis Corporation
发明人： Francois J. HENLEY
IPC分类号： H01L31/18 , H01L21/762 , B26F3/16 , B26F3/00
摘要： A film of material may be formed by providing a semiconductor substrate having a surface region and a cleave region located at a predetermined depth beneath the surface region. During a process of cleaving the film from the substrate, shear in the cleave region is carefully controlled. According to certain embodiments, an in-plane shear component (KII) is maintained near zero, sandwiched between a tensile region and a compressive region. In one embodiment, cleaving can be accomplished using a plate positioned over the substrate surface. The plate serves to constrain movement of the film during cleaving, and together with a localized thermal treatment reduces shear developed during the cleaving process. According to other embodiments, the KII component is purposefully maintained at a high level and serves to guide and drive fracture propagation through the cleave sequence.

28. 发明申请

US20180350785A1 THREE DIMENSIONAL INTEGRATED CIRCUIT 审中-公开
公开(公告)号：US20180350785A1
公开(公告)日：2018-12-06
申请号：US16057747
申请日：2018-08-07
申请人： Silicon Genesis Corporation
发明人： Theodore E. FONG , Michael I. CURRENT
IPC分类号： H01L25/10 , H01L21/822 , H01L25/00 , H01L21/762 , H01L27/06
摘要： Implanting ions to form a cleave layer in a semiconductor device causes damage to sensitive materials such as high-K dielectrics. In a process for forming a cleave layer and repairing damage caused by ion implantation, ions are implanted through a circuit layer of a substrate to form a cleave plane. The substrate is exposed to a hydrogen gas mixture for a first time at a first temperature to repair damage caused by the implanted ions. A cleaving process may then be performed, and the cleaved substrate may be stacked in a 3DIC structure.

29. 发明授权

US09336989B2 Method of cleaving a thin sapphire layer from a bulk material by implanting a plurality of particles and performing a controlled cleaving process 有权
标题翻译：通过植入多个颗粒并执行受控的切割过程从体材料切割薄蓝宝石层的方法
公开(公告)号：US09336989B2
公开(公告)日：2016-05-10
申请号：US13766522
申请日：2013-02-13
申请人： Silicon Genesis Corporation
发明人： Francois J. Henley
IPC分类号： C30B33/04 , H01J37/31 , C30B29/20 , C30B33/06
CPC分类号： C30B33/04 , C30B29/20 , C30B33/00 , C30B33/06 , H01J37/31 , H01J2237/3109 , Y10T156/1052 , Y10T428/24479 , Y10T428/31515
摘要： Embodiments relate to use of a particle accelerator beam to form thin layers of material from a bulk substrate. In particular embodiments, a bulk substrate (e.g. donor substrate) having a top surface is exposed to a beam of accelerated particles. In certain embodiments, this bulk substrate may comprise a core of crystalline sapphire (Al2O3) material. Then, a thin layer of the material is separated from the bulk substrate by performing a controlled cleaving process along a cleave region formed by particles implanted from the beam. Embodiments may find particular use as hard, scratch-resistant covers for personal electric device displays, or as optical surfaces for fingerprint, eye, or other biometric scanning.
摘要翻译：实施例涉及使用粒子加速器束从大块衬底形成薄层材料。在具体的实施方案中，具有顶表面的本体衬底（例如，施主衬底）暴露于加速颗粒束。在某些实施例中，该本体衬底可以包括晶体蓝宝石（Al2O3）材料的芯。然后，通过沿着从梁注入的颗粒形成的切割区域进行受控的切割过程，将薄层的材料与本体基板分离。实施例可以特别用作个人电子设备显示器的硬的防刮盖，或用作指纹，眼睛或其它生物特征扫描的光学表面。

30. 发明授权

US08835282B2 Controlled process and resulting device 有权
标题翻译：控制过程和结果设备
公开(公告)号：US08835282B2
公开(公告)日：2014-09-16
申请号：US13743303
申请日：2013-01-16
申请人： Silicon Genesis Corporation
发明人： Francois J. Henley , Nathan Cheung
IPC分类号： H01L21/46 , H01L21/425 , H01L21/18 , H01L21/223 , H01L21/762 , H01L21/20 , H01L21/268 , H01L21/304 , H01L21/78 , H01L21/265
CPC分类号： H01L21/76254 , H01L21/187 , H01L21/2007 , H01L21/2236 , H01L21/265 , H01L21/26506 , H01L21/2658 , H01L21/26593 , H01L21/268 , H01L21/304 , H01L21/7624 , H01L21/7813 , Y10S117/915 , Y10S156/93 , Y10S438/974 , Y10S438/977
摘要： A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film.
摘要翻译：一种形成多材料薄膜的方法包括提供包括单晶硅的多材料施主衬底和包含GaN的上覆膜。能量粒子通过多材料供体衬底的表面引入单晶硅内的选定深度。该方法包括向施主衬底的选定区域提供能量，以在施主衬底中开始受控的切割作用。然后，使用传播劈裂前端从施主衬底的剩余部分释放多材料膜，所述多材料膜包括单晶硅和上覆膜。

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