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21. 发明申请

US20090219002A1 SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：切换电源装置和半导体集成电路
公开(公告)号：US20090219002A1
公开(公告)日：2009-09-03
申请号：US12463790
申请日：2009-05-11
申请人： Nobuyuki Shirai , Ryotaro Kudo
发明人： Nobuyuki Shirai , Ryotaro Kudo
IPC分类号： G05F1/10
CPC分类号： H03K17/6871 , H02M3/1588 , H02M2001/0032 , H02M2001/0048 , H03K17/165 , Y02B70/1466 , Y02B70/1491 , Y02B70/16
摘要： A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
摘要翻译：电感器设置在产生输出电压的电感器的输出侧和接地电位之间。第一开关元件将电流从输入电压提供给电感器的输入侧，并且当第一开关元件断开时导通的第二开关元件将电感器的输入侧设定为规定电位。当负载电路处于轻负载状态并且第二开关元件断开时，控制电路以对应于输入电压的高电压检测电感器的输入侧的电压到达，并且接通第一开关元件。当负载电路处于重负载状态时，使电压检测电路的检测输出无效，并且在第二开关元件断开之后，导通第一开关元件。

22. 发明授权

US07548050B2 Switching power supply device and semiconductor integrated circuit 有权
标题翻译：开关电源装置和半导体集成电路
公开(公告)号：US07548050B2
公开(公告)日：2009-06-16
申请号：US11979093
申请日：2007-10-31
申请人： Nobuyuki Shirai , Ryotaro Kudo
发明人： Nobuyuki Shirai , Ryotaro Kudo
IPC分类号： G05F1/40
CPC分类号： H03K17/6871 , H02M3/1588 , H02M2001/0032 , H02M2001/0048 , H03K17/165 , Y02B70/1466 , Y02B70/1491 , Y02B70/16
摘要： A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
摘要翻译：电感器设置在产生输出电压的电感器的输出侧和接地电位之间。第一开关元件将电流从输入电压提供给电感器的输入侧，并且当第一开关元件断开时导通的第二开关元件将电感器的输入侧设定为规定电位。当负载电路处于轻负载状态并且第二开关元件断开时，控制电路以对应于输入电压的高电压检测电感器的输入侧的电压到达，并且接通第一开关元件。当负载电路处于重负载状态时，使电压检测电路的检测输出无效，并且在第二开关元件断开之后，导通第一开关元件。

23. 发明申请

US20090146094A1 ASSEMBLED STRUCTURE OF VALVE DEVICE, PLUG BODY, AND MANUAL VALVE 失效
标题翻译：阀装置，插头阀和手动阀的组装结构
公开(公告)号：US20090146094A1
公开(公告)日：2009-06-11
申请号：US11719597
申请日：2005-11-10
申请人： Takuya Suzuki , Hidetoshi Fujiwara , Toshihiko Shima , Munetoshi Kuroyanagi , Tadayoshi Kamiya , Soichi Shirai , Nobuyuki Shirai
发明人： Takuya Suzuki , Hidetoshi Fujiwara , Toshihiko Shima , Munetoshi Kuroyanagi , Tadayoshi Kamiya , Soichi Shirai , Nobuyuki Shirai
IPC分类号： F16K1/00
CPC分类号： F16K1/303 , F17C13/04 , F17C2205/0329 , F17C2205/0335 , F17C2205/0385 , F17C2221/012 , F17C2223/0123 , F17C2223/036 , F17C2270/0168 , F17C2270/0184 , Y02E60/321 , Y10T137/88054 , Y10T137/88062
摘要： A plug body housing 16 has a receiving recess 17 and the receiving recess 17 includes a first recess 21 opening toward the outside and a second recess 22 connected to the first recess 21. Check valves 8 and 9 are provided in the second recess 22, and a manual valve 14 is provided in the first recess 21. An internal threaded portion 45 is formed in an inner circumferential surface of the first recess 21, and a housing 35 of the manual valve 14 is threaded into the internal threaded portion 45. The check valves 8 and 9 are held between a bottom surface 22a of the second recess 22 and a bottom 35a of the housing 35 so that the check valves 8 and 9 are secured in the second recess 22.
摘要翻译：塞体主体壳体16具有容纳凹部17，并且容纳凹部17包括朝向外部开口的第一凹部21和连接到第一凹部21的第二凹部22.止回阀8和9设置在第二凹部22中，并且手动阀14设置在第一凹部21中。内螺纹部45形成在第一凹部21的内周面上，手动阀14的壳体35旋入内螺纹部45。阀8和9被保持在第二凹部22的底表面22a和壳体35的底部35a之间，使得止回阀8和9固定在第二凹部22中。

24. 发明授权

US07134638B2 Stop valve for gas tank 失效
标题翻译：气罐截止阀
公开(公告)号：US07134638B2
公开(公告)日：2006-11-14
申请号：US11041060
申请日：2005-01-21
申请人： Tadayoshi Kamiya , Soichi Shirai , Nobuyuki Shirai , Toshihiko Shima , Hiroaki Suzuki , Yoshiyuki Takeuchi
发明人： Tadayoshi Kamiya , Soichi Shirai , Nobuyuki Shirai , Toshihiko Shima , Hiroaki Suzuki , Yoshiyuki Takeuchi
IPC分类号： F16K31/44
CPC分类号： F16K1/302 , F16K1/02 , F16K31/50
摘要： A stop valve for a gas tank is provided which achieves favorable sealing performance by inhibiting rotation of a sealing member attached to a valve element. A passage is formed inside a valve body, and a valve seat is provided in the passage. The valve element which is engaged and disengaged from the valve seat is slidably inserted to a sliding hole bored in the valve body. The annular sealing member is arranged in sliding contact with the outer peripheral surface of the valve element and the inner peripheral surface of the sliding hole. A screw hole connecting to the sliding hole and coaxial thereto is provided in the valve body. A rotating operation member having a male screw is rotatably screwed into the screw hole from the outside of the valve body. One end of the rotating operation member is made to abut the valve body.
摘要翻译：提供一种用于气罐的截止阀，其通过禁止附接到阀元件的密封构件的旋转而实现良好的密封性能。在阀体内部形成通道，在通道内设有阀座。与阀座接合和脱离的阀元件可滑动地插入到在阀体中钻孔的滑动孔中。环形密封构件与阀体的外周面和滑动孔的内周面滑动接触。在阀体中设置有与滑动孔连接并与其同轴的螺孔。具有外螺纹的旋转操作构件从阀体的外部可旋转地旋入螺钉孔中。使旋转操作构件的一端与阀体抵接。

25. 发明授权

US07078782B2 Semiconductor device 有权
公开(公告)号：US07078782B2
公开(公告)日：2006-07-18
申请号：US10948305
申请日：2004-09-24
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L27/095
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact region for contact with the metal, the metal being electrically connected to the second semiconductor region, and a center-to-center distance between adjacent first conductors in the first region being smaller than that between adjacent second conductors in the second region.

26. 发明授权

US06930354B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06930354B2
公开(公告)日：2005-08-16
申请号：US10915416
申请日：2004-08-11
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura
IPC分类号： H01L29/417 , H01L21/336 , H01L21/60 , H01L23/482 , H01L23/495 , H01L23/544 , H01L29/76 , H01L29/78 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7811 , H01L21/56 , H01L22/32 , H01L23/3107 , H01L23/4824 , H01L23/49562 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/94 , H01L29/0615 , H01L29/41766 , H01L29/4238 , H01L29/456 , H01L29/4941 , H01L29/66727 , H01L29/66734 , H01L29/7802 , H01L29/7813 , H01L2221/6834 , H01L2221/68372 , H01L2224/02166 , H01L2224/0401 , H01L2224/04026 , H01L2224/05155 , H01L2224/05166 , H01L2224/05572 , H01L2224/05624 , H01L2224/05644 , H01L2224/0615 , H01L2224/1131 , H01L2224/13021 , H01L2224/13144 , H01L2224/14051 , H01L2224/1415 , H01L2224/16 , H01L2224/16245 , H01L2224/32245 , H01L2224/45144 , H01L2224/73153 , H01L2224/73253 , H01L2224/81191 , H01L2224/81203 , H01L2224/94 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/0102 , H01L2924/01023 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/1306 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2224/03 , H01L2224/11 , H01L2924/00 , H01L2224/05552
摘要： A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
摘要翻译：半导体器件包括栅极电极GE，栅极电极GE电连接到栅极部分，栅极部分由沿芯片区域CA的T的方向形成的多个沟槽的内部设置的多晶硅膜制成，其中栅电极GE 形成为与与形成在相邻条形槽之间的源极区域电连接的源极电极SE相同的层级，并且栅电极GE由沿着芯片区域的周边形成的栅电极部分G 1 CA和栅极指部分G 2，其布置成使得芯片区域CA沿着X方向分成两半。源电极SE由相对于栅极指部分G 2的上部和下部构成，并且栅电极GE和源电极SE经由凸块电极连接到引线框架。

27. 发明申请

US20050161627A1 Stop valve for gas tank 失效
标题翻译：气罐截止阀
公开(公告)号：US20050161627A1
公开(公告)日：2005-07-28
申请号：US11041060
申请日：2005-01-21
申请人： Tadayoshi Kamiya , Soichi Shirai , Nobuyuki Shirai , Toshihiko Shima , Hiroaki Suzuki , Yoshiyuki Takeuchi
发明人： Tadayoshi Kamiya , Soichi Shirai , Nobuyuki Shirai , Toshihiko Shima , Hiroaki Suzuki , Yoshiyuki Takeuchi
IPC分类号： F17C13/04 , F16K1/00 , F16K1/02 , F16K1/30 , F16K31/50 , F16K31/44 , F16K51/00
CPC分类号： F16K1/302 , F16K1/02 , F16K31/50
摘要： A stop valve for a gas tank is provided which achieves favorable sealing performance by inhibiting rotation of a sealing member attached to a valve element. A passage is formed inside a valve body, and a valve seat is provided in the passage. The valve element which is engaged and disengaged from the valve seat is slidably inserted to a sliding hole bored in the valve body. The annular sealing member is arranged in sliding contact with the outer peripheral surface of the valve element and the inner peripheral surface of the sliding hole. A screw hole connecting to the sliding hole and coaxial thereto is provided in the valve body. A rotating operation member having a male screw is rotatably screwed into the screw hole from the outside of the valve body. One end of the rotating operation member is made to abut the valve body.
摘要翻译：提供一种用于气罐的截止阀，其通过禁止附接到阀元件的密封构件的旋转而实现良好的密封性能。在阀体内部形成通道，在通道内设有阀座。与阀座接合和脱离的阀元件可滑动地插入到在阀体中钻孔的滑动孔中。环形密封构件与阀体的外周面和滑动孔的内周面滑动接触。在阀体中设置有与滑动孔连接并与其同轴的螺孔。具有外螺纹的旋转操作构件从阀体的外部可旋转地旋入螺钉孔中。使旋转操作构件的一端与阀体抵接。

28. 发明授权

US08426910B2 Semiconductor device for use in a power supply circuit and having a power MOSFET and Schottky barrier diode 有权
标题翻译：用于电源电路并具有功率MOSFET和肖特基势垒二极管的半导体器件
公开(公告)号：US08426910B2
公开(公告)日：2013-04-23
申请号：US13467536
申请日：2012-05-09
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/76
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes.
摘要翻译：用于电源电路的半导体器件具有第一和第二MOSFET。 MOSFET之一的源极 - 漏极路径耦合到另一个MOSFET的源极 - 漏极路径，并且负载元件耦合到源极 - 漏极路径的连接节点。第二MOSFET形成在具有肖特基势垒二极管的半导体衬底上。第二MOSFET的第一栅电极形成在半导体衬底的第一区域中的沟槽中，而第二MOSFET的第二栅电极形成在半导体衬底的第二区域中的沟槽中。第一和第二栅极电连接在一起。在相邻的第二栅电极之间形成肖特基势垒二极管的部分。相邻的第一栅电极之间的中心到中心的间隔小于相邻的第二栅电极之间的中心间距。

29. 发明授权

US08193578B2 Power supply circuit having a semiconductor device including a MOSFET and a Schottky junction 失效
标题翻译：电源电路具有包括MOSFET和肖特基结的半导体器件
公开(公告)号：US08193578B2
公开(公告)日：2012-06-05
申请号：US13214131
申请日：2011-08-19
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/76
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： A power supply circuit includes first and second switching MOSFETS. A semiconductor device, including the second switching MOSFET, has a plurality of transistor cell regions disposed in a semiconductor substrate. A source electrode of the second MOSFET is disposed over a main surface of the semiconductor substrate and is in contact with a top surface of a source region in each of the plurality of transistor cell regions. A drain electrode of the second MOSFET is disposed over a back surface of the semiconductor substrate and is electrically connected to the semiconductor substrate. A Schottky cell region is disposed between the plurality of transistor cell regions in the semiconductor substrate. The source electrode is in contact with a part of the main surface of the semiconductor so as to form a Schottky junction in the Schottky cell region.
摘要翻译：电源电路包括第一和第二开关MOSFET。包括第二开关MOSFET的半导体器件具有设置在半导体衬底中的多个晶体管单元区域。第二MOSFET的源电极设置在半导体衬底的主表面上，并且与多个晶体管单元区域中的每一个中的源极区域的顶表面接触。第二MOSFET的漏电极设置在半导体衬底的背面上并与半导体衬底电连接。肖特基电池区设置在半导体衬底中的多个晶体管单元区域之间。源电极与半导体的主表面的一部分接触，以便在肖特基电池区域中形成肖特基结。

30. 发明授权

US07518208B2 Semiconductor device having power transistors and Schottky barrier diode 有权
标题翻译：具有功率晶体管和肖特基势垒二极管的半导体器件
公开(公告)号：US07518208B2
公开(公告)日：2009-04-14
申请号：US11482765
申请日：2006-07-10
申请人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
发明人： Nobuyuki Shirai , Nobuyoshi Matsuura , Yoshito Nakazawa
IPC分类号： H01L29/47
CPC分类号： H01L29/7806 , H01L27/0629 , H01L29/0615 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/20 , H01L29/402 , H01L29/407 , H01L29/4236 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/7802 , H01L29/7811 , H01L29/7813 , H01L29/782 , H01L29/7823 , H01L29/872 , H01L29/8725
摘要： A semiconductor device has a first region and a second region formed on a surface of a substrate. Plural first conductors and second conductors are formed in the first and second regions respectively. A first semiconductor region and a second semiconductor region are formed between adjacent first conductors. The second semiconductor region is in the first semiconductor region and has a conductivity type opposite to that of the first semiconductor. A third semiconductor region is formed between adjacent second conductors. The third semiconductor region has the same conductivity type as the second semiconductor region and is lower in density than the second semiconductor region. The third semiconductor region has a metal contact region for contact with a metal, which is electrically connected to the second semiconductor region. A center-to-center distance between adjacent first conductors is smaller than that between adjacent second conductors.
摘要翻译：半导体器件具有形成在衬底的表面上的第一区域和第二区域。多个第一导体和第二导体分别形成在第一和第二区域中。在相邻的第一导体之间形成第一半导体区域和第二半导体区域。第二半导体区域处于第一半导体区域并具有与第一半导体区域相反的导电类型。在相邻的第二导体之间形成第三半导体区域。第三半导体区域具有与第二半导体区域相同的导电类型，并且密度低于第二半导体区域。第三半导体区域具有与金属接触的金属接触区域，其与第二半导体区域电连接。相邻的第一导体之间的中心到中心的距离小于相邻的第二导体之间的距离。

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