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21. 发明授权

US08013445B2 Low resistance high reliability contact via and metal line structure for semiconductor device 有权
标题翻译：低电阻高可靠性接触通孔和半导体器件的金属线结构
公开(公告)号：US08013445B2
公开(公告)日：2011-09-06
申请号：US12112405
申请日：2008-04-30
申请人： Hsiang-Huan Lee , Ming Han Lee , Ming-Shih Yeh , Chen-Hua Yu
发明人： Hsiang-Huan Lee , Ming Han Lee , Ming-Shih Yeh , Chen-Hua Yu
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76846 , H01L23/485 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor contact structure includes a copper plug formed within a dual damascene, single damascene or other opening formed in a dielectric material and includes a composite barrier layer between the copper plug and the sidewalls and bottom of the opening. The composite barrier layer preferably includes an ALD TaN layer disposed on the bottom and along the sides of the opening although other suitable ALD layers may be used. A barrier material is disposed between the copper plug and the ALD layer. The barrier layer may be a Mn-based barrier layer, a Cr-based barrier layer, a V-based barrier layer, a Nb-based barrier layer, a Ti-based barrier layer, or other suitable barrier layers.
摘要翻译：半导体接触结构包括形成在双镶嵌，单镶嵌或形成在电介质材料中的其它开口的铜塞，并且包括铜塞与开口的侧壁和底部之间的复合阻挡层。复合阻挡层优选地包括设置在开口的底部和侧面上的ALD TaN层，尽管可以使用其它合适的ALD层。阻挡材料设置在铜塞和ALD层之间。阻挡层可以是基于Mn的阻挡层，Cr基阻挡层，V基阻挡层，Nb基阻挡层，Ti基阻挡层或其它合适的阻挡层。

22. 发明申请

US20080295412A1 APPARATUS FOR STORING SUBSTRATES 有权
标题翻译：储存基材的装置
公开(公告)号：US20080295412A1
公开(公告)日：2008-12-04
申请号：US11755508
申请日：2007-05-30
申请人： Yi-Li Hsiao , Chen-Hua Yu , Jean Wang , Jui-Pin Hung , Ming-Shih Yeh
发明人： Yi-Li Hsiao , Chen-Hua Yu , Jean Wang , Jui-Pin Hung , Ming-Shih Yeh
IPC分类号： E06B7/16 , H01L21/00
CPC分类号： H01L21/67373 , H01L21/67376 , H01L21/67389
摘要： An apparatus includes an enclosure and a door configured to seal the enclosure. The door includes a plate. A rotational apparatus is disposed over the plate. At least one first member with a first arm extends from a first rib of the first member. At least one second member with a second arm extends from a second rib of the second member. The first and second arms are connected to the rotational apparatus. At least one corner member has a first edge. The first edge has a shape corresponding to a shape of a corner of the frame. The corner member is connected to a first end of the third arm. A second end of the third arm is connected to the rotational apparatus. A sealing material is disposed along a first longitudinal side of the first rib and a second longitudinal side of the second rib.
摘要翻译：一种装置包括外壳和构造成密封外壳的门。门包括一个板。旋转装置设置在板上。具有第一臂的至少一个第一构件从第一构件的第一肋延伸。具有第二臂的至少一个第二构件从第二构件的第二肋延伸。第一和第二臂连接到旋转装置。至少一个角部件具有第一边缘。第一边缘具有与框架的角部的形状对应的形状。角部件连接到第三臂的第一端。第三臂的第二端连接到旋转装置。密封材料沿着第一肋的第一纵向侧面和第二肋的第二纵向侧面设置。

23. 发明申请

US20080258303A1 Novel structure for reducing low-k dielectric damage and improving copper EM performance 审中-公开
标题翻译：用于降低低k电介质损伤和提高铜电感性能的新型结构
公开(公告)号：US20080258303A1
公开(公告)日：2008-10-23
申请号：US11788986
申请日：2007-04-23
申请人： Ming-Shih Yeh , Tien-I Bao , David Ding-Chung Lu
发明人： Ming-Shih Yeh , Tien-I Bao , David Ding-Chung Lu
IPC分类号： H01L23/528 , H01L21/44
CPC分类号： H01L21/7684 , H01L21/288 , H01L21/76829 , H01L21/76834 , H01L21/76849
摘要： A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a dielectric layer; a chemical mechanical polish (CMP) stop layer on the dielectric layer; a conductive wiring in the dielectric layer; and a metal cap over the conductive wiring.
摘要翻译：提供半导体结构及其形成方法。半导体结构包括电介质层; 电介质层上的化学机械抛光（CMP）停止层; 电介质层中的导电布线; 和导电布线上的金属盖。

24. 发明申请

US20080032472A1 Methods for improving uniformity of cap layers 有权
标题翻译：改善盖层均匀性的方法
公开(公告)号：US20080032472A1
公开(公告)日：2008-02-07
申请号：US11524000
申请日：2006-09-20
申请人： Chen-Hua Yu , Ming-Shih Yeh , Chih-Hsien Lin , Yung-Cheng Lu , Hui-Lin Chang
发明人： Chen-Hua Yu , Ming-Shih Yeh , Chih-Hsien Lin , Yung-Cheng Lu , Hui-Lin Chang
IPC分类号： H01L21/8242
CPC分类号： H01L21/76849 , H01L21/02074 , H01L21/3105 , H01L21/76826
摘要： A method of forming an integrated circuit includes providing a semiconductor substrate, forming a metallization layer over the semiconductor substrate, wherein the metallization layer comprises a metal feature in a low-k dielectric layer and extending from a top surface of the low-k dielectric layer into the low-k dielectric layer, performing a treatment to the low-k dielectric layer to form a hydrophilic top surface, and plating a cap layer on the metal feature in a solution.
摘要翻译：形成集成电路的方法包括提供半导体衬底，在半导体衬底上形成金属化层，其中金属化层包括低k电介质层中的金属特征并且从低k电介质层的顶表面延伸进入低k电介质层，对低k电介质层进行处理以形成亲水性顶表面，以及在溶液中的金属特征上镀覆盖层。

25. 发明授权

US07179732B2 Interconnection structure and fabrication method thereof 有权
标题翻译：互连结构及其制造方法
公开(公告)号：US07179732B2
公开(公告)日：2007-02-20
申请号：US10893632
申请日：2004-07-15
申请人： Chiung-Sheng Hsiung , Chih-Chao Yang , Gwo-Shil Yang , Ming-Shih Yeh , Jen-Kon Chen
发明人： Chiung-Sheng Hsiung , Chih-Chao Yang , Gwo-Shil Yang , Ming-Shih Yeh , Jen-Kon Chen
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/311
CPC分类号： H01L21/76829 , H01L21/76801 , H01L21/76807
摘要： An interconnection structure and a fabrication method thereof. A first organic low-k material layer, a stress redistribution layer, a second organic low-k dielectric layer are formed in sequence over a substrate, followed by forming an opening in the first organic low-k material layer, the stress redistribution layer, and the second organic low-k dielectric layer. The opening is then filled with a conductive material to form an interconnection structure. The stress redistribution layer has a heat expansion coefficient closer to that of the substrate, while such heat expansion coefficient differs more significantly from those of the first and second organic low-k material layers.
摘要翻译：互连结构及其制造方法。在衬底上依次形成第一有机低k材料层，应力再分配层，第二有机低k电介质层，随后在第一有机低k材料层中形成开口，应力再分布层，和第二有机低k电介质层。然后用导电材料填充开口以形成互连结构。应力再分配层的热膨胀系数接近于基板的热膨胀系数，而这种热膨胀系数与第一和第二有机低k材料层的热膨胀系数的差异更显着。

26. 发明申请

US20060199379A1 Method for forming dual damascene structures with tapered via portions and improved performance 有权
标题翻译：用于形成具有锥形通孔部分的双镶嵌结构和改进的性能的方法
公开(公告)号：US20060199379A1
公开(公告)日：2006-09-07
申请号：US11071104
申请日：2005-03-04
申请人： Ming-Shih Yeh , Ming-Hsing Tsai , Shau-Lin Shue , Chen-Hua Yu
发明人： Ming-Shih Yeh , Ming-Hsing Tsai , Shau-Lin Shue , Chen-Hua Yu
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/76804 , H01L21/31144 , H01L21/314 , H01L21/76808 , Y10S438/978
摘要： The manufacture of damascene structures having improved performance, particularly, but not by way of limitation, dual damascene structures is provided. In one embodiment, a substrate having a conductive layer is formed in a first insulating layer. A protective layer is formed above the conductive layer. An etching stop layer is formed above the protective layer and the first insulating layer. A second insulating layer is formed above the etching stop layer. A first patterned photoresist layer is formed above the second insulating layer, the first patterned photoresist layer having a first pattern. The first pattern is etched into the second insulating layer and the etching stop layer to form a first opening. A via plug is filled at least partially in the first opening. An anti-reflective coating (ARC) layer is formed above the second insulating layer. A second patterned photoresist layer is formed above the ARC layer, the second photoresist layer having a second pattern. The second pattern is etched into portions of the via plug, second insulation layer, and the ARC layer to form a second opening, wherein a substantially tapered sidewall portion is formed at the interface of the first and second openings.
摘要翻译：提供了具有改进的性能，特别但非限制性的双镶嵌结构的镶嵌结构的制造。在一个实施例中，具有导电层的衬底形成在第一绝缘层中。在导电层上形成保护层。在保护层和第一绝缘层上方形成蚀刻停止层。在蚀刻停止层上形成第二绝缘层。第一图案化光致抗蚀剂层形成在第二绝缘层之上，第一图案化光致抗蚀剂层具有第一图案。将第一图案蚀刻到第二绝缘层和蚀刻停止层中以形成第一开口。通孔插塞至少部分地填充在第一开口中。在第二绝缘层上方形成抗反射涂层（ARC）层。第二图案化光致抗蚀剂层形成在ARC层上方，第二光致抗蚀剂层具有第二图案。第二图案被蚀刻到通孔塞，第二绝缘层和ARC层的部分中以形成第二开口，其中在第一和第二开口的界面处形成大致锥形的侧壁部分。

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