专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20060081895A1 Semiconductor device having fin transistor and planar transistor and associated methods of manufacture 有权
公开(公告)号：US20060081895A1
公开(公告)日：2006-04-20
申请号：US11244136
申请日：2005-10-06
申请人： Deok-Huyng Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
发明人： Deok-Huyng Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
IPC分类号： H01L29/76
CPC分类号： H01L29/7851 , H01L21/823431 , H01L21/84 , H01L27/1203 , H01L29/66795
摘要： Disclosed is a fin transistor and a planar transistor and a method of forming the same. The fin transistor and the planar transistor are formed to have gate electrodes with similar thicknesses by selectively recessing a semiconductor substrate in a planar region where the planar transistor is formed.

22. 发明申请

US20120133834A1 CHANNEL CHANGER IN A VIDEO PROCESSING APPARATUS AND METHOD THEREOF 审中-公开
标题翻译：视频处理设备中的信道更换及其方法
公开(公告)号：US20120133834A1
公开(公告)日：2012-05-31
申请号：US13367054
申请日：2012-02-06
申请人： Kum-yon HAN , Mi-young YOO , Min-gu KANG
发明人： Kum-yon HAN , Mi-young YOO , Min-gu KANG
IPC分类号： H04N5/50
CPC分类号： H04N7/16 , H04N21/23424 , H04N21/4384 , H04N21/44016 , H04N21/482
摘要： A video processing apparatus, comprises a signal receiving part receiving a video signal through one of a plurality of channels, a user inputting part in which the channel is selected and inputted by a user, a video processing part processing the video signal received by the signal receiving part, and a controller controlling the signal receiving part to start receiving a video signal through a first channel upon the first channel selection among the plurality of channels by the user, and to start receiving a video signal through a second channel upon the second channel selection among the plurality of channels by the user, wherein the second channel selection is made during the receiving process of the first channel.Thus, the present invention provides a video processing apparatus and a video processing method capable of performing a channel change rapidly to solve the above-described problem.
摘要翻译：一种视频处理装置，包括通过多个通道之一接收视频信号的信号接收部分，由用户选择和输入信道的用户输入部分，处理由信号接收的视频信号的视频处理部分以及控制信号接收部分的控制器，以在用户在多个频道中进行第一频道选择之后通过第一频道开始接收视频信号，并且在第二频道上开始通过第二频道接收视频信号用户在多个信道之间进行选择，其中在第一信道的接收过程期间进行第二信道选择。因此，本发明提供了能够快速地进行频道改变以解决上述问题的视频处理装置和视频处理方法。

23. 发明申请

US20100031581A1 Door for washing machine 有权
标题翻译：洗衣机门
公开(公告)号：US20100031581A1
公开(公告)日：2010-02-11
申请号：US12385556
申请日：2009-04-10
申请人： Min-Gu Kang , Kyu-Chul Lee , Chang-Woo Son
发明人： Min-Gu Kang , Kyu-Chul Lee , Chang-Woo Son
IPC分类号： E06B5/00
CPC分类号： D06F39/14
摘要： A door for a washing machine is disclosed. A door for a washing machine includes an inner frame having an opening with a predetermined size, an outer frame provided at a front surface of the inner frame, having an opening in communication with the opening of the inner frame, a glass member fitted between the inner and outer frames, covering the openings of the inner and outer frames, a decorative member provided at a front surface of the outer frame, having an opening in communication with the openings, and a front cover fitted between the decorative member and the outer frame, covering the openings of the inner and outer frames and the decorative member, the front cover having a positioning portion determining a position of the front cover coupled to the outer frame.
摘要翻译：公开了一种用于洗衣机的门。一种用于洗衣机的门包括具有预定尺寸的开口的内框架，设置在内框架的前表面处的外框架，具有与内框架的开口连通的开口;玻璃构件，内框架和外框架，覆盖内框架和外框架的开口;设置在外框架的前表面处的装饰构件，具有与开口连通的开口，以及装配构件和外框架之间的前盖覆盖内框架和外框架和装饰构件的开口，前盖具有确定联接到外框架的前盖的位置的定位部分。

24. 发明授权

US10960423B1 Pump container 有权
公开(公告)号：US10960423B1
公开(公告)日：2021-03-30
申请号：US16834224
申请日：2020-03-30
申请人： Min Gu Kang
发明人： Min Gu Kang
IPC分类号： B05B11/00 , F16F1/06 , F16F1/04
摘要： Provided is a pump container including a container body, a pump body having a cylindrical spring, a shoulder member, and a discharge nozzle. The cylindrical spring is made of a plastic material and includes: a top ring plate having a hole formed at the center thereof; a first spring member erectly extended downward from one side undersurface of the top ring plate, while rotating in a clockwise direction; a second spring member erectly extended downward from the other side undersurface of the top ring plate which is a position symmetrical to one side undersurface thereof, while rotating in the same direction as the first spring member; and a pair of connection spring members erectly extended downward from two center surfaces between one side undersurface and the other side undersurface of the top ring plate, while rotating in the opposite direction to the first spring member and the second spring member.

25. 发明申请

US20130298983A1 CORROSION-RESISTANT PHOTOVOLTAIC MODULE 审中-公开
标题翻译：耐腐蚀光伏模块
公开(公告)号：US20130298983A1
公开(公告)日：2013-11-14
申请号：US13818084
申请日：2011-08-09
申请人： Dong Hwan Kim , Sung Ju Tark , Min Gu Kang , Sung Eun Park
发明人： Dong Hwan Kim , Sung Ju Tark , Min Gu Kang , Sung Eun Park
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , C23F13/20 , H01L31/0201 , H01L31/0512 , Y02E10/50
摘要： The present invention relates to a corrosion-resistant photovoltaic module characterized in that an interconnector ribbon connects the photovoltaic cells and a sacrificial metal as an anode for cathodic protection is attached to the interconnector ribbon to prevent corrosion of a connective part between the photovoltaic cells. The present invention can prevent an increase of serial resistance at a connective part between the ribbon and the cell and can significantly reduce the degradation of generation efficiency by preventing the corrosion of the interconnector ribbon due to the external environment. In addition, the life of the photovoltaic module can be extended
摘要翻译：本发明涉及一种耐腐蚀光伏模块，其特征在于，连接光伏电池的互连带，作为用于阴极保护的阳极的牺牲金属附接到互连器带，以防止光伏电池之间的连接部件的腐蚀。本发明可以防止带状和电池之间的连接部分处的串联电阻的增加，并且可以通过防止由于外部环境导致的互连器带的腐蚀而显着降低发电效率的劣化。此外，光伏组件的寿命可以延长

26. 发明授权

US08155483B2 Apparatus for and method of measuring image 有权
标题翻译：用于测量图像的装置和方法
公开(公告)号：US08155483B2
公开(公告)日：2012-04-10
申请号：US12090592
申请日：2006-10-18
申请人： Sang-yoon Lee , Min-gu Kang , Ssang-gun Lim
发明人： Sang-yoon Lee , Min-gu Kang , Ssang-gun Lim
IPC分类号： G06K9/20
CPC分类号： G01B9/04
摘要： An image measuring apparatus for enhancing an accuracy of an image captured by an optical system and a method thereof are disclosed. The apparatus includes a CCD camera for capturing the object and outputting the captured image, a lamp for generating white light to illuminate a capturing area of the object, an illumination controller for controlling the lamp to be turned on, a piezoelectric actuator for controlling a minute height of the optical system with respect to the object, an image capturing device for acquiring the image captured by the CCD camera, a driving signal generator for outputting a driving signal to the illumination controller and the piezoelectric actuator when an enable signal is generated from the CCD camera, and an image signal processor for estimating height information of the object from data transmitted from the image capturing unit.
摘要翻译：公开了一种用于提高由光学系统捕获的图像的精度的图像测量装置及其方法。该装置包括用于捕获物体并输出拍摄图像的CCD照相机，用于产生白光以照亮被摄体的拍摄区域的灯，用于控制被导通的灯的照明控制器，用于控制分钟的压电致动器相对于物体的光学系统的高度，用于获取由CCD照相机拍摄的图像的图像捕获装置，当从该照相机产生使能信号时，将驱动信号输出到照明控制器和压电致动器的驱动信号发生器 CCD摄像机和图像信号处理器，用于根据从图像捕获单元发送的数据来估计物体的高度信息。

27. 发明授权

US07652340B2 Fin field effect transistor and method of manufacturing the same 有权
标题翻译： Fin场效应晶体管及其制造方法
公开(公告)号：US07652340B2
公开(公告)日：2010-01-26
申请号：US11952676
申请日：2007-12-07
申请人： Deok-Hyung Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
发明人： Deok-Hyung Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
IPC分类号： H01L29/78
CPC分类号： H01L29/7851 , H01L29/66795 , H01L29/7854
摘要： In a fin field effect transistor (FET), an active pattern protrudes in a vertical direction from a substrate and extends across the substrate in a first horizontal direction. A first silicon nitride pattern is formed on the active pattern, and a first oxide pattern and a second silicon nitride pattern are sequentially formed on the substrate and on a sidewall of a lower portion of the active pattern. A device isolation layer is formed on the second silicon nitride pattern, and a top surface of the device isolation layer is coplanar with top surfaces of the oxide pattern and the second silicon nitride pattern. A buffer pattern having an etching selectivity with respect to the second silicon nitride pattern is formed between the first oxide pattern and the second silicon nitride pattern. Internal stresses that can be generated in sidewalls of the active pattern are sufficiently released and an original shape of the first silicon nitride pattern remains unchanged, thereby improving electrical characteristics of the fin FET.
摘要翻译：在鳍状场效应晶体管（FET）中，有源图案在垂直方向上从基板突出，并且在第一水平方向上延伸穿过基板。第一氮化硅图案形成在有源图案上，并且第一氧化物图案和第二氮化硅图案依次形成在衬底上和活性图案的下部的侧壁上。在第二氮化硅图案上形成器件隔离层，器件隔离层的顶表面与氧化物图案和第二氮化硅图案的顶表面共面。在第一氧化物图案和第二氮化硅图案之间形成具有相对于第二氮化硅图案的蚀刻选择性的缓冲图案。可以在有源图案的侧壁中产生的内部应力被充分地释放，并且第一氮化硅图案的原始形状保持不变，从而改善了鳍式FET的电特性。

28. 发明授权

US07501674B2 Semiconductor device having fin transistor and planar transistor and associated methods of manufacture 有权
标题翻译：具有鳍式晶体管和平面晶体管的半导体器件及其制造方法
公开(公告)号：US07501674B2
公开(公告)日：2009-03-10
申请号：US11244136
申请日：2005-10-06
申请人： Deok-Hyung Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
发明人： Deok-Hyung Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
IPC分类号： H01L21/00
CPC分类号： H01L29/7851 , H01L21/823431 , H01L21/84 , H01L27/1203 , H01L29/66795
摘要： Disclosed is a fin transistor and a planar transistor and a method of forming the same. The fin transistor and the planar transistor are formed to have gate electrodes with similar thicknesses by selectively recessing a semiconductor substrate in a planar region where the planar transistor is formed.
摘要翻译：公开了鳍式晶体管和平面晶体管及其形成方法。通过在形成平面晶体管的平面区域中选择性地凹入半导体衬底，将鳍状晶体管和平面晶体管形成为具有相似厚度的栅电极。

29. 发明授权

US07442596B2 Methods of manufacturing fin type field effect transistors 有权
标题翻译：制造鳍式场效应晶体管的方法
公开(公告)号：US07442596B2
公开(公告)日：2008-10-28
申请号：US11359000
申请日：2006-02-22
申请人： Jong-Wook Lee , Deok-Hyung Lee , Min-Gu Kang , Yu-Gyun Shin
发明人： Jong-Wook Lee , Deok-Hyung Lee , Min-Gu Kang , Yu-Gyun Shin
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/78618 , H01L29/66545 , H01L29/66795 , H01L29/785
摘要： A fin type field effect transistor includes a semiconductor substrate, an active fin, a first hard mask layer pattern, a gate insulation layer pattern, a first conductive layer pattern, and source/drain regions. The active fin includes a semiconductor material and is formed on the substrate and extends in a direction away from a major surface of the substrate. The first hard mask layer pattern is formed on a distal surface of the active fin from the substrate. The gate insulation layer is formed on a sidewall portion of the active fin. The first conductive layer pattern includes a metal silicide and is formed on surfaces of the substrate and the gate insulation layer pattern, and on a sidewall of the first hard mask pattern. The source/drain regions are formed in the active fin on opposite sides of the first conductive layer pattern.
摘要翻译：鳍型场效应晶体管包括半导体衬底，有源鳍，第一硬掩模层图案，栅极绝缘层图案，第一导电层图案和源极/漏极区域。活性鳍片包括半导体材料，并且形成在基底上并沿远离基底的主表面的方向延伸。第一硬掩模层图案形成在有源鳍片的远离表面上的基底上。栅极绝缘层形成在有源鳍片的侧壁部分上。第一导电层图案包括金属硅化物，并且形成在基板和栅极绝缘层图案的表面上，以及在第一硬掩模图案的侧壁上。源极/漏极区域形成在第一导电层图案的相对侧上的有源鳍片中。

30. 发明授权

US07326608B2 Fin field effect transistor and method of manufacturing the same 有权
标题翻译： Fin场效应晶体管及其制造方法
公开(公告)号：US07326608B2
公开(公告)日：2008-02-05
申请号：US11292261
申请日：2005-11-30
申请人： Deok-Hyung Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
发明人： Deok-Hyung Lee , Yu-Gyun Shin , Jong-Wook Lee , Min-Gu Kang
IPC分类号： H01L21/8238
CPC分类号： H01L29/7851 , H01L29/66795 , H01L29/7854
摘要： In a fin field effect transistor (FET), an active pattern protrudes in a vertical direction from a substrate and extends across the substrate in a first horizontal direction. A first silicon nitride pattern is formed on the active pattern, and a first oxide pattern and a second silicon nitride pattern are sequentially formed on the substrate and on a sidewall of a lower portion of the active pattern. A device isolation layer is formed on the second silicon nitride pattern, and a top surface of the device isolation layer is coplanar with top surfaces of the oxide pattern and the second silicon nitride pattern. A buffer pattern having an etching selectivity with respect to the second silicon nitride pattern is formed between the first oxide pattern and the second silicon nitride pattern. Internal stresses that can be generated in sidewalls of the active pattern are sufficiently released and an original shape of the first silicon nitride pattern remains unchanged, thereby improving electrical characteristics of the fin FET.
摘要翻译：在鳍状场效应晶体管（FET）中，有源图案在垂直方向上从基板突出，并且在第一水平方向上延伸穿过基板。第一氮化硅图案形成在有源图案上，并且第一氧化物图案和第二氮化硅图案依次形成在衬底上和活性图案的下部的侧壁上。在第二氮化硅图案上形成器件隔离层，器件隔离层的顶表面与氧化物图案和第二氮化硅图案的顶表面共面。在第一氧化物图案和第二氮化硅图案之间形成具有相对于第二氮化硅图案的蚀刻选择性的缓冲图案。可以在有源图案的侧壁中产生的内部应力被充分地释放，并且第一氮化硅图案的原始形状保持不变，从而改善了鳍式FET的电特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式