会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 27. 发明授权
    • Information input method using wearable information input device
    • 信息输入法使用穿戴式信息输入装置
    • US06965374B2
    • 2005-11-15
    • US10195475
    • 2002-07-16
    • Jean-Yves VilletSang-goog LeeKyung-ho Park
    • Jean-Yves VilletSang-goog LeeKyung-ho Park
    • G06F3/02G06F3/00G06F3/01G06F3/023G09G5/00
    • G06F3/014G06F3/0233
    • An information input method using a wearable information input device is provided. The information input method using a wearable information input device, which is worn on predetermined body parts of a user and has sensors for sensing motions of the predetermined body parts on a plane or in a space, includes selecting a key group including a desired key corresponding to information that the user desires to input by moving a first predetermined body part, and selecting the desired key from the selected key group by moving a second predetermined body part. Accordingly, the user can easily and quickly select a key on an information screen externally, and areas overlapped by the information screen in a monitor can be minimized.
    • 提供了一种使用穿戴式信息输入装置的信息输入方法。 使用佩戴在用户的预定身体部位并具有用于感测在平面或空间中的预定身体部位的运动的传感器的可穿戴信息输入装置的信息输入方法包括:选择包括期望的键对应的键组 通过移动第一预定身体部位来希望输入的信息,以及通过移动第二预定身体部位从所选择的密码组中选择所需的密钥。 因此,用户可以容易地并且快速地在外部在信息屏幕上选择一个键,并且可以将监视器中的信息屏幕重叠的区域最小化。
    • 29. 发明授权
    • High-dielectric-constant material electrodes comprising sidewall spacers
    • 包括侧壁间隔物的高介电常数材料电极
    • US5656852A
    • 1997-08-12
    • US486565
    • 1995-06-07
    • Yasushiro NishiokaScott R. SummerfeltKyung-ho ParkPijush Bhattacharya
    • Yasushiro NishiokaScott R. SummerfeltKyung-ho ParkPijush Bhattacharya
    • H01L21/02H01L29/51H01L29/92H01L23/58
    • H01L29/516H01L28/60H01L28/55
    • Generally, the present invention utilizes a lower electrode comprising a sidewall spacer to fore a top surface with rounded comers on which HDC material can be deposited without substantial cracking. An important aspect of the present invention is that the sidewall spacer does not reduce the electrical contact surface area between the lower electrode and the HDC material layer as compared to a similar structure containing a lower electrode without a sidewall spacer. One embodiment of the present invention is a microelectronic structure comprising a supporting layer (e.g. Si substrate 30) having a principal surface, a lower electrode overlying the principal surface of the supporting layer, and a high-dielectric-constant material layer (e.g. BST 44) overlying the top surface of the lower electrode. The lower electrode comprises an adhesion layer (e.g TiN 36), an unreactive layer (e.g. Pt 42), a sidewall spacer (e.g. SiO.sub.2 40) and a top surface, with the sidewall spacer causing the top surface to have a rounded corner. The rounded corner of the top surface minimizes crack formation in the high-dielectric-constant material, layer.
    • 通常,本发明使用包括侧壁间隔件的下电极,在顶表面之前具有可以沉积HDC材料而没有实质裂纹的圆角。 本发明的一个重要方面是,与不含侧壁间隔物的下电极相似的结构相比,侧壁间隔物不会减小下电极和HDC材料层之间的电接触表面积。 本发明的一个实施例是一种微电子结构,其包括具有主表面的支撑层(例如Si衬底30),覆盖在支撑层的主表面上的下电极和高介电常数材料层(例如BST 44 )覆盖下电极的顶表面。 下电极包括粘合层(例如TiN 36),非反应层(例如Pt 42),侧壁间隔物(例如SiO 2 40)和顶表面,侧壁间隔物使顶表面具有圆角。 顶表面的圆角最小化高介电常数材料层中的裂纹形成。