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    • 21. 发明授权
    • Field effect transistor utilizing the gate structure two-dimensionally
    • 利用二极管结构的场效应晶体管
    • US5831303A
    • 1998-11-03
    • US679343
    • 1996-07-10
    • Juha Rapeli
    • Juha Rapeli
    • H01L29/43H01L29/78H01L29/788
    • H01L29/7831H01L29/435
    • The object of the invention is a field-effect transistor comprising a drain (D) and a source (S) and a gate (G) with a determined width (W) and length (L), equipped with means (G1-G2) for generating a voltage distribution on the gate in direction of its width. The gate comprises a first end in direction of its width and a second end essentially opposite to the first end, and that a first gate contact (G1) is arranged at the first end for providing a first voltage (V.sub.G1) to the first end, and a second gate contact (G2) is arranged at the second end for providing a second voltage (V.sub.G2) to the second end, for generating a voltage distribution on the gate in direction of its width with the help of a difference voltage (V.sub.G1 -V.sub.G2) between the first (G1) and the second (G2) gate contact. On the basis of the first (V.sub.G1) and second (V.sub.G2) voltage, a determined common-mode voltage is obtained on the gate, by which the voltage level of the gate is adjusted, and the difference voltage can be used for the adjustment of the voltage distribution in the width direction of the gate. In addition, a third gate contact (G3) can be arranged on the gate for generating a determined potential (V.sub.G3) as a common voltage evenly over the entire gate area. As an output (I.sub.DS), a signal proportional to the product of the difference voltage (V.sub.G1 -V.sub.G2) and common-mode voltage is obtained from the field-effect transistor thereby forming a multiplier.
    • 本发明的目的是一种场效应晶体管,其包括具有确定的宽度(W)和长度(L)的漏极(D)和源极(S)和栅极(G),其具有装置(G1-G2) 用于在栅极的宽度方向上产生电压分布。 栅极包括其宽度方向的第一端和基本上与第一端相对的第二端,并且在第一端设置第一栅极接触(G1),以向第一端提供第一电压(VG1) 并且在所述第二端处布置第二栅极触点(G2),用于向所述第二端提供第二电压(VG2),用于借助于差分电压(VG1)来在栅极的宽度方向上产生电压分布 VG2)在第一(G1)和第二(G2)门接触之间。 在第一(VG1)和第二(VG2)电压的基础上,在栅极上获得确定的共模电压,通过该电压调节栅极的电压电平,并且差分电压可用于调整 栅极宽度方向的电压分布。 此外,可以在栅极上布置第三栅极触点(G3),以在整个栅极区域上均匀地产生作为公共电压的确定电位(VG3)。 作为输出(IDS),从场效应晶体管获得与差分电压(VG1-VG2)和共模电压的乘积成比例的信号,从而形成乘法器。
    • 23. 发明授权
    • Method and circuit arrangement to generate a phase modulated or
frequency modulated signal
    • 用于产生相位调制或调频信号的方法和电路装置
    • US5325075A
    • 1994-06-28
    • US997285
    • 1992-12-23
    • Juha Rapeli
    • Juha Rapeli
    • H03C3/00H03C3/09H04L27/20H04L27/36H03L7/18H03L7/22
    • H03C3/0975H03C3/0925H03C3/0933H03C3/0941H03C3/0966
    • The invention relates to a method, in which a phase modulated or frequency modulated signal can be directly generated with a PLL frequency synthesizer. With an interpolating synthesizer it is possible to create a very dense output frequency (f.sub.x) raster, so that the pulses received in the phase comparator (63) both from the reference signal (f.sub.o) branch and from the voltage controlled oscillator VCO (65) are lengthened in lengthening means (62, 69; 67, 68; k.sub.1, L+.DELTA.L; k.sub.2, L) by a desired amount. The numbers k.sub.1 and k.sub.2 are proportional to the amount of lengthening. When these integers now further are changed proportionally to the modulating signal, the change of the integers causes a change of the time difference of the pulses received by the phase comparator (63). This change of the time difference further causes a change in the output signal (f.sub.x) of the voltage controlled oscillator. The method is particularly well suited to provide digital quadrature phase modulation QPSK or quadrature amplitude modulation QAM, in which the shift from one carrier phase to another has a predetermined size and waveform as a function of time.
    • 本发明涉及一种可以用PLL频率合成器直接产生相位调制或调频信号的方法。 通过内插合成器,可以创建非常密集的输出频率(fx)光栅,使得从参考信号(fo)支路和压控振荡器VCO(65)中接收的脉冲在相位比较器(63)中接收, 延长装置(62,69; 67,68; k1,L + DELTA L; k2,L)期望量。 数字k1和k2与延长量成比例。 当这些整数现在进一步与调制信号成比例地变化时,整数的改变引起由相位比较器(63)接收的脉冲的时间差的变化。 时间差的这种变化进一步导致压控振荡器的输出信号(fx)的变化。 该方法特别适用于提供数字正交相位调制QPSK或正交幅度调制QAM,其中从一个载波相位到另一个载波相位的移位具有作为时间的函数的预定大小和波形。