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21. 发明申请

WO2005098970A2 IMPROVED THERMOELECTRIC MODULE WITH Si/SiC AND B4C/B9C SUPER-LATTICE LEGS 审中-公开
标题翻译：改进的Si / SiC和B4C / B9C超级电容器的热电模块
公开(公告)号：WO2005098970A2
公开(公告)日：2005-10-20
申请号：PCT/US2005/011491
申请日：2005-04-05
申请人： HI-Z TECHNOLOGY, INC. , GHAMATY, Saeid , ELSNER, Norbert, B. , BASS, John, C.
发明人： GHAMATY, Saeid , ELSNER, Norbert, B. , BASS, John, C.
IPC分类号： H01L31/042
CPC分类号： H01L35/22 , H01L35/26 , H01L35/34
摘要： A super-lattice thermoelectric device. The device is comprised of p-legs and nlegs, each leg being comprised of a large number of very thin alternating layers of two materials with differing electron band gaps. The n-legs in the device are comprised of alternating layers of Si and SiC. The p-legs are comprised of alternating layers of B 4 C and B 9 C. In preferred embodiments the layers are about 100 angstroms thick. Thermoelectric modules made according to the present invention are useful for both cooling applications as well as electric power generation. This preferred embodiment is a thermoelectric 10 X 10 egg crate type module about 6 cm X 6cm X 0.76 cm designed to produce 70 Watts with a temperature difference of 300 degrees C with a module efficiency of about 30 percent. The module has 98 active thermoelectric legs, with each leg having more than 3 million super-lattice layers.
摘要翻译：超晶格热电器件。该装置由p腿和nlegs组成，每条腿由大量具有不同电子带隙的两种材料的非常薄的交替层组成。器件中的n脚由Si和SiC的交替层组成。 p腿由B4C和B9C的交替层组成。在优选的实施方案中，这些层是约100埃厚。根据本发明制造的热电模块对于冷却应用以及发电都是有用的。该优选实施例是一种约6cm×6cm×0.76cm的热电10×10蛋箱型模块，其设计为产生70瓦，温度差为300摄氏度，模块效率约为30％。该模块具有98个活动热电腿，每个支腿具有超过3百万个超格子层。

22. 发明申请

WO0030185A8 QUANTUM WELL THERMOELECTRIC MATERIAL ON VERY THIN SUBSTRATE 审中-公开
标题翻译：量子很好的热电材料在很薄的衬底上
公开(公告)号：WO0030185A8
公开(公告)日：2000-09-21
申请号：PCT/US9926996
申请日：1999-11-12
申请人： HI Z TECHNOLOGY INC , GHAMATY SAEID , ELSNER NORBERT B
发明人： GHAMATY SAEID , ELSNER NORBERT B
IPC分类号： C23C14/06 , H01L29/06 , H01L35/14 , H01L35/22 , H01L35/26 , H01L35/32 , H01L35/34 , H02N11/00 , H01L35/00 , F25D25/00 , H01L31/0328 , H01L35/28 , H01L35/30
CPC分类号： H01L35/22 , H01L35/26
摘要： Thermoelectric elements (62A, 64A, 66A, 62B, 64B, and 66B) for use in a thermoelectric device. The thermoelectric elements have a very large number of alternating layers of semiconductor material deposited on a very thin substrate. The layers of semiconductor material aternate between barrier semiconductor material and conducting semiconductor material creating quantum wells within the thin layers of conducting semiconductor material. The conducting semiconductor material is doped to create conducting properties. The substrate preferably should be very thin, a very good thermal and electrical insulator with good thermal stability and strong and flexible. In a preferred embodiment, the thin organic substrate is a thin polyimide film (specifically Kapton3) coated with an even thinner film of crystalline silicon. The substrate is about .3 mills (127 micons) thick. The crystalline silicon layer is about 0.1 micron thick. This embodiment includes on each side of the thin Kapton substrate about 3,000 alternating layers of silicon and silicon-germanium, each layer being about 100 ANGSTROM and the total thickness of the layers being about 30 microns.
摘要翻译：用于热电装置的热电元件（62A，64A，66A，62B，64B和66B）。热电元件具有沉积在非常薄的衬底上的非常大量的交替半导体材料层。半导体材料层在势垒半导体材料和导电半导体材料之间迂回，在导电半导体材料的薄层内形成量子阱。导电半导体材料被掺杂以产生导电性质。基材优选应该非常薄，是一种非常好的热和电绝缘体，具有良好的热稳定性和强韧性。在一个优选的实施方案中，薄有机基材是涂覆有更薄的晶体硅膜的薄聚酰亚胺膜（特别是Kapton3）。衬底约为0.3毫米（127微米）厚。晶体硅层约为0.1微米厚。该实施例在薄Kapton衬底的每一侧上包括约3,000个硅和硅 - 锗交替层，每层约100埃，并且层的总厚度约为30微米。

23. 发明专利

DE69730323D1 未知
公开(公告)号：DE69730323D1
公开(公告)日：2004-09-23
申请号：DE69730323
申请日：1997-03-20
申请人： HI Z TECHNOLOGY INC , LEAVITT FREDERICK A , BASS JOHN C , ELSNER NORBERT
发明人： LEAVITT A , BASS C , ELSNER NORBERT
IPC分类号： H01L35/32 , H01L35/34 , H05K7/20

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