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21. 发明授权

US07408747B2 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US07408747B2
公开(公告)日：2008-08-05
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

22. 发明申请

US20080137236A1 Magnetic read head having increased electron exchange 失效
标题翻译：磁读头具有增加的电子交换
公开(公告)号：US20080137236A1
公开(公告)日：2008-06-12
申请号：US11638271
申请日：2006-12-12
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Brian R. York
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , G11B5/3163
摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1-x)(x=0.22-0.5) alloys, Ru(x)Cr(1-x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.
摘要翻译：公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上部种子层其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

23. 发明申请

US20080080101A1 DUAL-LAYER FREE LAYER IN A TUNNELING MAGNETORESISTANCE (TMR) ELEMENT 有权
标题翻译：隧道隧道（TMR）元件中的双层自由层
公开(公告)号：US20080080101A1
公开(公告)日：2008-04-03
申请号：US11536891
申请日：2006-09-29
申请人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
发明人： Daniele Mauri , Satoshi Shigematsu , Alexander M. Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/08 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.
摘要翻译：公开了隧道磁阻（TMR）元件和相关的制造方法。在一个实施例中，TMR元件包括铁磁钉扎层结构，隧道势垒层和具有双层结构的自由层。在一个实施例中，自由层包括第一无定形自由层和第二无定形自由层。在另一个实施方案中，自由层包括第一多晶自由层和第二无定形自由层。双层结构的第一自由层和第二自由层的组成不同，以提供改进的TMR性能和受控的磁致伸缩。在一个实例中，第一自由层可以具有针对TMR优化的组成，而第二自由层可以具有针对磁致伸缩优化的组成。

24. 发明申请

US20060171083A1 Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing 失效
标题翻译：增强型反并联固定传感器采用薄钌间隔和高磁场退火
公开(公告)号：US20060171083A1
公开(公告)日：2006-08-03
申请号：US11048406
申请日：2005-02-01
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

25. 发明申请

US20060042929A1 Method for reactive sputter deposition of an ultra-thin metal oxide film 审中-公开
标题翻译：超薄金属氧化物膜的反应溅射沉积方法
公开(公告)号：US20060042929A1
公开(公告)日：2006-03-02
申请号：US10927888
申请日：2004-08-26
申请人： Daniele Mauri
发明人： Daniele Mauri
IPC分类号： C23C14/00 , C23C14/32
CPC分类号： H01L43/12 , C23C14/0042 , C23C14/0089 , C23C14/081 , G11B5/127 , G11B5/39
摘要： The invention is a method for reactive sputter deposition of an ultra-thin film of an oxide of a first metal onto a film of a second metal. The method can be part of the fabrication of a magnetic tunnel junction (MTJ) with the metal oxide film becoming the tunnel barrier of the MTJ. The metal oxide film is reactively sputter deposited in the presence of reactive oxygen gas (O2) from a target consisting essentially of the first metal, with the sputtering occurring in the “high-voltage” state to assure that deposition occurs with the target in its metallic mode, i.e., no or minimal oxidation. When the metal oxide film is for a MTJ tunnel barrier, then the target is formed of a metal of Al, Ti, Ta, Y, Ga or In; an alloy of two or more of these metals; or an alloy of one or more of these metals with Mg; and the film of the second metal is an iron-containing film, typically a film of Fe or a CoFe alloy.
摘要翻译：本发明是将第一金属的氧化物的超薄膜反应溅射沉积到第二金属的膜上的方法。该方法可以是金属氧化物膜成为MTJ隧道势垒的磁隧道结（MTJ）的制造的一部分。在基本由第一金属组成的靶上，在活性氧气（O 2 O 2）存在下，金属氧化物膜被溅射沉积，溅射以“高电压”状态发生，以确保目标在其金属模式中发生沉积，即没有或最小的氧化。当金属氧化物膜用于MTJ隧道势垒时，靶由Al，Ti，Ta，Y，Ga或In的金属形成; 这些金属中的两种或更多种的合金; 或这些金属中的一种或多种与Mg的合金; 并且第二金属的膜是含铁膜，通常是Fe或CoFe合金的膜。

26. 发明授权

US06876525B2 Giant magnetoresistance sensor with stitched longitudinal bias stacks and its fabrication process 失效
标题翻译：具有缝合纵向偏置叠层的巨磁电阻传感器及其制造工艺
公开(公告)号：US06876525B2
公开(公告)日：2005-04-05
申请号：US10229491
申请日：2002-08-27
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5/012 , G11B5/31 , G11B5/33 , G11B5/39 , H01F10/32 , H01F41/30
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/012 , G11B5/3116 , G11B5/3163 , G11B5/332 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49041 , Y10T29/49046
摘要： A giant magnetoresistance (GMR) magnetic head that includes a GMR read sensor with a stitched longitudinal bias (LB) stack. The GMR read sensor includes seed, pinning, pinned, spacer, sense and cap layers in a read region, and its seed and pinning layers are extended into two side regions. The LB stack is fabricated on the pinning layer in the two side regions and includes separation, seed and LB layers. The separation layer, preferably made of an amorphous film, separates the pinning layer from the seed and LB layers and thereby prevents unwanted crystalline effects of the pinning layer. Monolayer photoresist patterning and chemical mechanical polishing may be incorporated into the fabrication process of the GMR head to attain uniform thicknesses of the separation, seed and LB layers, and to align the midplane of the LB layer at the same horizontal level as the midplane of the sense layer.
摘要翻译：一种巨磁阻（GMR）磁头，其包括具有缝合纵向偏置（LB）堆叠的GMR读取传感器。 GMR读取传感器包括读取区域中的种子，钉扎，固定，间隔物，感测层和盖层，并且其种子和钉扎层延伸到两个侧面区域。 LB堆叠制造在两侧区域的钉扎层上，包括分离，种子和LB层。优选由非晶膜制成的分离层将钉扎层与种子和LB层分开，从而防止钉扎层的不期望的结晶效应。可以将单层光致抗蚀剂图案化和化学机械抛光结合到GMR头的制造工艺中，以获得分离，种子和LB层的均匀厚度，并且将LB层的中平面对准在与感觉层。

27. 发明授权

US06788499B2 Spin valve sensor with insulating and conductive seed layers 失效
标题翻译：具有绝缘和导电种子层的旋转阀传感器
公开(公告)号：US06788499B2
公开(公告)日：2004-09-07
申请号：US10441692
申请日：2003-05-19
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , C23C14/0036 , C23C14/085 , C23C14/568 , G01R33/093 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/3295 , H01F41/302 , Y10T29/49032 , Y10T29/49044
摘要： A spin valve sensor with insulating and conductive seed layers is provided. The sensor comprising Al2O3/Ni—Cr—Fe/Ni—Fe/Co—Fe/Cu/Co—Fe/Ru/Co—Fe/Pt—Mn films is formed by depositing an insulating Al2O3 seed layer in a first chamber by reactively pulsed DC magnetron sputtering, depositing a conducting Ni—Cr—Fe seed layer and a ferromagnetic Ni—Fe free layer in a second chamber by ion beam sputtering, and then forming the remainder of the spin valve sensor in a third chamber by DC magnetron sputtering.
摘要翻译：提供具有绝缘和导电种子层的自旋阀传感器。包含Al2O3 / Ni-Cr-Fe / Ni-Fe / Co-Fe / Cu / Co-Fe / Ru / Co-Fe / Pt-Mn膜的传感器通过反应性沉积在第一腔室中而形成绝缘Al2O3晶种层脉冲DC磁控溅射，通过离子束溅射在第二室中沉积导电Ni-Cr-Fe种子层和铁磁性Ni-Fe自由层，然后通过DC磁控溅射在第三室中形成其余的自旋阀传感器。

28. 发明授权

US06747852B2 Magnetoresistance sensors with Pt-Mn transverse and longitudinal pinning layers and a decoupling insulation layer 失效
标题翻译：具有Pt-Mn横向和纵向钉扎层和去耦绝缘层的磁阻传感器
公开(公告)号：US06747852B2
公开(公告)日：2004-06-08
申请号：US09932620
申请日：2001-08-17
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H04R15/00 , Y10T29/49044
摘要： A magnetoresistance sensor structure is formed of a magnetoresistance sensor having a transverse biasing stack including a transverse pinning layer made of a transverse-pinning-layer antiferromagnetic material, and a transverse pinned layer structure overlying the transverse pinning layer, a spacer layer overlying the transverse pinned layer structure, a sensing stack overlying the spacer layer, and a decoupling layer overlying the sensing stack. A longitudinal biasing stack overlies the magnetoresistance sensor and includes a longitudinal pinned layer, and a longitudinal pinning layer overlying the longitudinal pinned layer and made of a longitudinal-pinning-layer antiferromagnetic material. The transverse-pinning-layer antiferromagnetic material and the longitudinal-pinning-layer antiferromagnetic material are preferably Pt—Mn or Ni—Mn.
摘要翻译：磁阻传感器结构由具有横向偏置堆叠的磁阻传感器形成，横向偏置堆叠包括由横向钉扎层反铁磁材料制成的横向钉扎层和覆盖横向钉扎层的横向钉扎层结构，覆盖横向钉扎层层结构，覆盖间隔层的感测堆叠以及覆盖感测堆叠的去耦层。纵向偏置叠层覆盖在磁阻传感器上并且包括纵向被钉扎层，以及纵向钉扎层，其纵向被钉扎层覆盖并由纵向钉扎层反铁磁材料制成。横向钉扎层反铁磁材料和纵向钉扎层反铁磁材料优选为Pt-Mn或Ni-Mn。

29. 发明授权

US06709767B2 In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture 有权
标题翻译：用于自旋阀传感器中的盖和间隙层的原位氧化膜和制造方法
公开(公告)号：US06709767B2
公开(公告)日：2004-03-23
申请号：US09919280
申请日：2001-07-31
申请人： Tsann Lin , Daniele Mauri
发明人： Tsann Lin , Daniele Mauri
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , Y10T29/49044 , Y10T428/1129 , Y10T428/1164 , Y10T428/1171 , Y10T428/12549 , Y10T428/1259 , Y10T428/12611 , Y10T428/12646 , Y10T428/12667 , Y10T428/1291 , Y10T428/12917 , Y10T428/12931 , Y10T428/12937 , Y10T428/24967 , Y10T428/265
摘要： Disclosed is a spin-valve sensor employing one or more in-situ oxidized films as cap and/or gap layers in order to achieve an increased GMR coefficient and improved thermal stability. A fabrication method comprises depositing multilayer metallic films on a wafer in ion-beam and DC-magnetron sputtering modules of a sputtering system, and then transferring the wafer in a vacuum to an oxidation module where in-situ oxidation is conducted. When the method is used to form a cap layer, the cap layer may only be partially oxidized. A magnetic-field annealing may be subsequently conducted without the substantial occurrence of interface mixing and oxygen diffusion during the anneal process. The resulting spin-valve sensor exhibits an increased GMR coefficient, possibly due to induced specular scattering of conduction electrons and improved thermal stability mainly due to the protection of an underlying sensing layer from interface mixing and oxygen diffusion during the annealing process. Gap layers may also be formed from multi-layer in-situ deposition and oxidation of metal films. Smaller, more sensitive spin-valve sensors may be fabricated through the use of the alternative deposition and in-situ oxidization of the metallic films, thus allowing for greater recording data densities in disk drive systems.
摘要翻译：公开了一种使用一个或多个原位氧化膜作为盖和/或间隙层的自旋阀传感器，以便实现增加的GMR系数和改善的热稳定性。制造方法包括在溅射系统的离子束和DC-磁控溅射模块中的晶片上沉积多层金属膜，然后将晶片真空转移到进行原位氧化的氧化模块。当该方法用于形成覆盖层时，盖层仅可被部分氧化。随后可以进行磁场退火，而不会在退火过程中基本上出现界面混合和氧扩散。所产生的自旋阀传感器表现出增加的GMR系数，这可能是由于传导电子的诱导镜面散射和改进的热稳定性，这主要是由于在退火过程中保护底层感测层免于界面混合和氧扩散。间隙层也可以由金属膜的多层原位沉积和氧化形成。可以通过使用金属膜的替代沉积和原位氧化来制造更小，更灵敏的自旋阀传感器，从而允许磁盘驱动系统中更大的记录数据密度。

30. 发明授权

US06525913B1 Read head with sunken prefill insulation for preventing lead to shield shorts and maintaining planarization 失效
标题翻译：读头具有凹陷预填充绝缘，用于防止导线屏蔽短路并保持平坦化
公开(公告)号：US06525913B1
公开(公告)日：2003-02-25
申请号：US09635720
申请日：2000-08-09
申请人： Daniele Mauri , Hugo Alberto Emilio Santini
发明人： Daniele Mauri , Hugo Alberto Emilio Santini
IPC分类号： G11B523
CPC分类号： G11B5/3903 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/332 , G11B5/3967
摘要： First and second portions of a first shield layer on each side of a planar shield portion below a read sensor are recessed for receiving first and second insulative prefill layers which minimize electrical shorting between first and second hard bias layers and first and second lead layers to the first shield layer. The first and second prefill layers are close to first and second side edges of the read sensor so as to minimize shorting between the layers. By varying the depth of the first and second recesses in the first shield layer the first read gap layer or the second read gap layer can be planarized or, alternatively, each of the first and second read gap layers can be partially planarized, as desired.
摘要翻译：在读取传感器下面的平面屏蔽部分的每一侧上的第一屏蔽层的第一和第二部分被凹入，用于接收第一和第二绝缘预填层，其将第一和第二硬偏置层之间的电短路最小化以及将第一和第二引线层的电短路最小化到第一屏蔽层。第一和第二预填充层靠近读取传感器的第一和第二侧边缘，以便最小化层之间的短路。通过改变第一屏蔽层中的第一和第二凹槽的深度，第一读取间隙层或第二读取间隙层可以被平坦化，或者可选地，可以根据需要部分地平坦化第一和第二读取间隙层中的每一个。

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