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21. 发明申请

US20110186884A1 LED Reflective Structure and Method of Fabricating the Same 审中-公开
标题翻译： LED反光结构及其制作方法
公开(公告)号：US20110186884A1
公开(公告)日：2011-08-04
申请号：US12699160
申请日：2010-02-03
申请人： Cheng-Yi Liu , Po-Han Chang
发明人： Cheng-Yi Liu , Po-Han Chang
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L21/30 , H01L33/00 , H01L2224/13
摘要： A reflective structure is fabricated for a light emitting diode (LED). An ohmic contact layer of the LED is made into a netlike structure. Thus, a current is evenly distributed and a low contact resistance is remained. Furthermore, the reflective layer directly reflects light through holes of the netlike structure on emitting light. Thus, a reflectivity of the LED is enhanced.
摘要翻译：制造用于发光二极管（LED）的反射结构。 LED的欧姆接触层被制成网状结构。因此，电流均匀分布，并且保持低接触电阻。此外，反射层在发射光时直接反射通过网状结构的孔的光。因此，增强了LED的反射率。

22. 发明授权

US07888183B2 Thinned die integrated circuit package 有权
标题翻译：薄模集成电路封装
公开(公告)号：US07888183B2
公开(公告)日：2011-02-15
申请号：US12042392
申请日：2008-03-05
申请人： Cheng-Yi Liu , Johanna Swan , Steven Towle , Anna George, legal representative , Chuan Hu
发明人： Cheng-Yi Liu , Johanna Swan , Steven Towle , Chuan Hu
IPC分类号： H01L21/44
CPC分类号： H01L24/97 , H01L21/4871 , H01L23/142 , H01L23/36 , H01L23/367 , H01L23/49816 , H01L23/5389 , H01L24/11 , H01L24/19 , H01L2224/0401 , H01L2224/04026 , H01L2224/04105 , H01L2224/05124 , H01L2224/05147 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/20 , H01L2224/211 , H01L2224/32245 , H01L2224/73253 , H01L2224/73267 , H01L2224/82039 , H01L2224/92244 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/3011 , H01L2224/83 , H01L2224/82 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A method and apparatus provide an integrated circuit package with improved heat dissipation and easier fabrication. The integrated circuit package includes a thinned semiconductor die attached to a heat spreader using a thermally conductive material. The thinned die reduces the thermal resistance of the die/heat spreader combination to improve heat extraction from the die as well as eliminating processing steps in fabrication. Additionally, the thinned die becomes more compliant as it takes on the thermal/mechanical properties of the heat spreader to reduce stress-induced cracking of the die.
摘要翻译：一种方法和装置提供具有改进的散热和更容易制造的集成电路封装。集成电路封装包括使用导热材料附着到散热器的薄化半导体管芯。减薄的模头降低了模具/散热器组合的热阻，以改善从模具的热提取以及消除制造中的加工步骤。此外，薄型模具变得更加柔顺，因为它承受散热器的热/机械性能，以减少模具的应力引起的开裂。

23. 发明申请

US20100044743A1 Flip chip light emitting diode with epitaxial strengthening layer and manufacturing method thereof 审中-公开
标题翻译：具有外延强化层的倒装芯片发光二极管及其制造方法
公开(公告)号：US20100044743A1
公开(公告)日：2010-02-25
申请号：US12389440
申请日：2009-02-20
申请人： Cheng-Yi LIU , You-Hsien Chang , Shiaw-Tseh Chiang
发明人： Cheng-Yi LIU , You-Hsien Chang , Shiaw-Tseh Chiang
IPC分类号： H01L33/00 , H01L21/50
CPC分类号： H01L33/44 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/14 , H01L33/0079 , H01L33/62 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/1403 , H01L2224/16 , H01L2924/00014 , H01L2924/0102 , H01L2924/01079 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A flip chip light emitting diode with an epitaxial strengthening layer and a manufacturing method thereof are revealed. The flip chip light emitting diode with an epitaxial strengthening layer includes an epitaxial structure connected with an epitaxial strengthening layer while the manufacturing method of the flip chip light emitting diode with an epitaxial strengthening layer is mainly to form an epitaxial strengthening layer on the epitaxial structure. Thus the epitaxial structure of the flip chip light emitting diode is strengthened so as to prevent breakage of the epitaxial structure while removing a substrate by laser assisted lift-off technique or other techniques. Moreover, the thermal expansion coefficient of the epitaxial strengthening layer matches well with thermal expansion coefficient of the epitaxial structure. Thus after being treated with cyclic heating, there is no stress caused by unmatched thermal expansion coefficient. Therefore, reliability of the flip chip light emitting diode with an epitaxial strengthening layer is improved.
摘要翻译：揭示了具有外延强化层的倒装芯片发光二极管及其制造方法。具有外延强化层的倒装芯片发光二极管包括与外延加强层连接的外延结构，而具有外延加强层的倒装芯片发光二极管的制造方法主要在外延结构上形成外延强化层。因此，倒装芯片发光二极管的外延结构被加强，以便通过激光辅助剥离技术或其它技术来防止外延结构的破坏同时去除衬底。此外，外延加强层的热膨胀系数与外延结构的热膨胀系数很好地匹配。因此，在循环加热处理后，不存在由不匹配的热膨胀系数引起的应力。因此，提高了具有外延强化层的倒装芯片发光二极管的可靠性。

24. 发明申请

US20080283503A1 Method of Processing Nature Pattern on Expitaxial Substrate 审中-公开
标题翻译：在外延基板上处理自然图案的方法
公开(公告)号：US20080283503A1
公开(公告)日：2008-11-20
申请号：US11748478
申请日：2007-05-14
申请人： Cheng-yi Liu , Yi-ju Chen , Shih-Chieh Hsu , Ching-Liang Lin
发明人： Cheng-yi Liu , Yi-ju Chen , Shih-Chieh Hsu , Ching-Liang Lin
IPC分类号： B44C1/22
CPC分类号： H01L33/22 , H01L33/0062
摘要： A method of processing nature pattern on expitaxial substrate, unlike the conventional method of processing regular pattern on expitaxial substrate (such as sapphire substrate) by lithography, wet etches a sapphire substrate directly to obtain a nature pattern, so as to simplify the fabrication process. Compared with the conventional way of processing pattern sapphire, the nature pattern sapphire substrate produced by the method can avoid voids between the interface of sapphire and GaN and apply this technology to a wired bond LED structure to increase the sidewall light extraction and improve the texture of the sapphire surface of a flip chip LED structure. In addition, this method also can be applied to a thin-GaN LED for achieving the surface texture after the sapphire is removed by laser.
摘要翻译：在外延衬底上处理自然图案的方法，与通过光刻在外延衬底（例如蓝宝石衬底）上处理规则图案的常规方法不同，直接湿法蚀刻蓝宝石衬底以获得自然图案，从而简化制造工艺。与传统的蓝宝石处理方式相比，通过该方法生产的蓝宝石蓝宝石衬底可以避免蓝宝石和GaN界面之间的空隙，并将此技术应用于有线键合LED结构，增加侧壁光提取，改善纹理蓝宝石表面的倒装芯片LED结构。此外，该方法也可以应用于在通过激光去除蓝宝石之后实现表面纹理的薄GaN LED。

25. 发明授权

US07291863B2 Light emitting diode structure 有权
标题翻译：发光二极管结构
公开(公告)号：US07291863B2
公开(公告)日：2007-11-06
申请号：US11163220
申请日：2005-10-11
申请人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
发明人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
IPC分类号： H01L29/205 , H01L33/00
CPC分类号： H01L33/382 , H01L27/153 , H01L33/0079
摘要： A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.
摘要翻译：提供了包括外延基板，半导体层，第一接合焊盘和第二接合焊盘的LED结构。外延衬底具有通孔，并且半导体层设置在外延衬底上。半导体层包括第一掺杂半导体层，发光层和第二掺杂半导体层。第一类型掺杂半导体层设置在外延衬底上，而发光层设置在第一类型和第二类型掺杂半导体层之间。第一接合焊盘设置在通孔中并电连接到第一掺杂半导体层，而第二接合焊盘设置在第二掺杂半导体层上。

26. 发明申请

US20070158665A1 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：US20070158665A1
公开(公告)日：2007-07-12
申请号：US11689521
申请日：2007-03-22
申请人： Cheng-Yi Liu , Shih-Chieh Hsu
发明人： Cheng-Yi Liu , Shih-Chieh Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a silicon substrate is provided, and a wafer bonding process is performed between the silicon substrate and the gold layer. Finally, the epitaxy substrate is removed. As mentioned above, a LED with better reliability and efficiency of light-emitting is fabricated according to the method provided by the present invention. Moreover, the present invention further provides a LED.
摘要翻译：提供一种制造发光二极管（LED）的方法。首先，在外延基板上依次形成第一掺杂半导体层，发光层和第二掺杂半导体层。然后，在第二型掺杂半导体层上形成金层。接下来，提供硅衬底，并且在硅衬底和金层之间执行晶片接合工艺。最后，除去外延衬底。如上所述，根据本发明提供的方法制造具有更好的发光可靠性和效率的LED。此外，本发明还提供一种LED。

27. 发明授权

US06996272B2 Apparatus and method for removing background on visual 失效
公开(公告)号：US06996272B2
公开(公告)日：2006-02-07
申请号：US10193393
申请日：2002-07-11
申请人： Jiann-Jone Chen , Jau-Fu Liu , I-Yen Chen , Cheng-Yi Liu
发明人： Jiann-Jone Chen , Jau-Fu Liu , I-Yen Chen , Cheng-Yi Liu
IPC分类号： G06K9/34
CPC分类号： G06K9/38 , G06T7/11 , G06T2207/10016
摘要： A background removal apparatus comprises a color normalization module that normalizes an original image, and an image segmentation module that segments the normalized image into several segmented regions. A background mesh generation module simulates the variation of pixel colors in background and generates an interpolated background mesh. A comparison module compares the normalized image and the interpolated background mesh to form a background mask by extracting the coherent regions between them. A refinement module uses a refined rule to determine a final background mask, and a background removal module through which a pure foreground image is obtained. The apparatus combines the efficiency of both color and spatial clustering, and improves the capabilities of current image segmentation method to perform background removal.

28. 发明申请

US20080032280A1 Method and Kits for Detecting Human Cytomegalovirus 失效
标题翻译：检测人巨细胞病毒的方法和试剂盒
公开(公告)号：US20080032280A1
公开(公告)日：2008-02-07
申请号：US11459329
申请日：2006-07-21
申请人： Yu-Jiun Chan , Jui-Chu Lin , Cheng-Yi Liu , Ming-Tak Ho
发明人： Yu-Jiun Chan , Jui-Chu Lin , Cheng-Yi Liu , Ming-Tak Ho
IPC分类号： C12Q1/70 , C07H21/00
CPC分类号： C12Q1/701
摘要： The present invention provides methods and kits for detecting human cytomegalovirus. The present invention also provides oligonucleotides for detecting human cytomegalovirus.
摘要翻译：本发明提供用于检测人巨细胞病毒的方法和试剂盒。本发明还提供了用于检测人巨细胞病毒的寡核苷酸。

29. 发明申请

US20080003707A1 Method for fabricating diode having reflective electrode of alloy metal 审中-公开
标题翻译：制造具有合金金属反射电极的二极管的方法
公开(公告)号：US20080003707A1
公开(公告)日：2008-01-03
申请号：US11501015
申请日：2006-08-09
申请人： Cheng-Yi Liu , Chia-Hsien Chou , Ching-Liang Lin
发明人： Cheng-Yi Liu , Chia-Hsien Chou , Ching-Liang Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： The present invention provides a method to fabricate a diode whose heat stability is improved. The diode has a layer of high reflective ohmic contact and an alloy metal is used in the layer. With the alloy metal used in the layer, the heat stability of the diode is improved.
摘要翻译：本发明提供一种制造热稳定性提高的二极管的方法。二极管具有高反射欧姆接触层，在该层中使用合金金属。使用该层中使用的合金金属，二极管的热稳定性得到改善。

30. 发明授权

US07265389B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07265389B2
公开(公告)日：2007-09-04
申请号：US11163314
申请日：2005-10-14
申请人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
发明人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L33/0079 , H01L25/0753 , H01L2224/48091 , H01L2924/00014
摘要： A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.
摘要翻译：提供一种制造发光二极管（LED）的方法。在外延衬底上连续形成第一掺杂半导体层，发光层和第二掺杂半导体层; 在其上形成结合层; 用转移衬底与接合层接合; 去除外延衬底; 去除所述第一类型掺杂半导体层的一部分，所述发光层和所述第二类型掺杂半导体层，用于暴露所述结合层的一部分; 图案化所述接合层以形成彼此隔离的第一和第二接合部分，其中所述第一掺杂半导体层，所述发光层和所述第二掺杂半导体层设置在所述第一接合部分上; 在所述第一掺杂半导体层上形成焊盘; 以及形成用于电连接所述焊盘和所述第二接合部的导线。

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