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21. 发明授权

US08338200B2 Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same 有权
标题翻译：前照射反向量子阱红外光电探测器及其制造方法
公开(公告)号：US08338200B2
公开(公告)日：2012-12-25
申请号：US13019658
申请日：2011-02-02
申请人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
发明人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
IPC分类号： H01L21/00 , H01L31/0232 , H01S5/00
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/101
摘要： A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
摘要翻译：制造前照射反向量子阱红外光电探测器的方法可以包括提供具有体基底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替量子阱层和外延生长的势垒层本体衬底层。该方法还包括将至少一个正面公共电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，使量子阱晶片的体基底层变薄，并蚀刻量子材料以形成限定至少一个锥体量子阱堆叠的量子阱面。背面电接触可以应用于锥体量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。

22. 发明授权

US07095026B2 Methods and apparatuses for selectively limiting undesired radiation 有权
标题翻译：用于选择性地限制不需要的辐射的方法和装置
公开(公告)号：US07095026B2
公开(公告)日：2006-08-22
申请号：US10703136
申请日：2003-11-06
申请人： John W. Devitt , Mark E. Greiner , Jeffrey J. Voelker , David R. Wade
发明人： John W. Devitt , Mark E. Greiner , Jeffrey J. Voelker , David R. Wade
IPC分类号： G01J5/00
CPC分类号： G01J5/06 , G01J1/04 , G01J1/0407 , G01J1/0414 , G01J1/0418 , G01J1/0488 , G01J1/42 , G01J2001/0276 , G02F1/0126 , G02F2203/11 , G02F2203/52
摘要： An apparatus for selectively limiting undesired radiation from a scene which, in one embodiment, includes an optic that is operative to attenuate radiation by selectively losing transparency in response to radiation within a first wavelength band from a source. The loss of transparency affects the passage through the optic of radiation within a second wavelength band from that source. The optic can be positioned between a sensor and the scene such that the sensor is configured to receive radiation from the scene through the optic. In one embodiment, an optical limiter includes a plurality of such optics, wherein the optical limiter is configured to facilitate transmission of light corresponding to a scene, and wherein each optic is configured to receive a respective portion of the light corresponding to a respective portion of the scene. A light detector assembly and a method of limiting light energy are also included.
摘要翻译：一种用于选择性地限制来自场景的不需要的辐射的装置，在一个实施例中，该光学器件包括可操作地通过响应于来自源的第一波长带内的辐射选择性地损失透明度来衰减辐射的光学器件。透明度的损失影响到来自该源的第二波长带内的辐射光通过。光学元件可以位于传感器和场景之间，使得传感器被配置成通过光学器件从场景接收辐射。在一个实施例中，光学限制器包括多个这样的光学器件，其中所述光学限制器被配置为促进对应于场景的光的透射，并且其中每个光学器件被配置为接收对应于相应部分的光的相应部分现场。还包括光检测器组件和限制光能的方法。

23. 发明授权

US09515210B2 Diode barrier infrared detector devices and superlattice barrier structures 有权
标题翻译：二极管屏障红外探测器和超晶格屏障结构
公开(公告)号：US09515210B2
公开(公告)日：2016-12-06
申请号：US14271908
申请日：2014-05-07
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Yajun Wei
IPC分类号： H01L31/0352 , H01L31/101 , H01L31/0304
CPC分类号： H01L31/035236 , H01L31/02005 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer.
摘要翻译：公开了二极管屏障红外探测器和超晶格屏障结构。在一个实施例中，二极管屏障红外检测器件包括第一接触层，与第一接触层相邻的吸收层以及与吸收层相邻的阻挡层，以及与阻挡层相邻的第二接触层。阻挡层包括由形成在阻挡层内的p-n结形成的二极管结构。阻挡层可以使得对少数载流子孔基本上没有阻挡。在另一个实施例中，二极管屏障红外检测器件包括第一接触层，与第一接触层相邻的吸收层，邻近吸收层的阻挡层和邻近阻挡层的二极管结构。二极管结构包括第二接触层。

24. 发明授权

US09256117B2 Panoramic imaging systems comprising rotatable mirrors for image stabilization 有权
标题翻译：全景成像系统包括用于图像稳定的可旋转镜
公开(公告)号：US09256117B2
公开(公告)日：2016-02-09
申请号：US13268000
申请日：2011-10-07
申请人： David Fitzpatrick , Michael Spicer
发明人： David Fitzpatrick , Michael Spicer
IPC分类号： H04N7/00 , G03B37/02 , G03B15/00
CPC分类号： G03B37/02 , G03B15/006 , G03B2205/0023
摘要： Panoramic imaging systems including rotatable mirrors are provided. A panoramic imaging system includes a rotatable platform, an imaging device mounted to the rotatable platform, and a mirror rotatably mounted to the rotatable platform. The mirror is positioned in an optical path of the imaging device. The mirror and the imaging device are oriented such that the mirror and imaging device are in the same plane, an optical axis of the imaging device is substantially perpendicular to an axis of rotation of the rotatable platform, and an axis of rotation of the mirror is substantially parallel to the axis of rotation of the rotatable platform when the mirror is in an initial position.
摘要翻译：提供包括可旋转镜的全景成像系统。全景成像系统包括可旋转平台，安装到可旋转平台的成像装置和可旋转地安装到可旋转平台的反射镜。镜子位于成像装置的光路中。反射镜和成像装置被定向成使得反射镜和成像装置处于相同的平面中，成像装置的光轴基本上垂直于可旋转平台的旋转轴线，并且反射镜的旋转轴线是当反射镜处于初始位置时，基本上平行于可旋转平台的旋转轴线。

25. 发明申请

US20150295108A1 Tunneling Barrier Infrared Detector Devices 有权
标题翻译：隧道屏障红外探测器
公开(公告)号：US20150295108A1
公开(公告)日：2015-10-15
申请号：US14686489
申请日：2015-04-14
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Yajun Wei
IPC分类号： H01L31/0352 , H01L31/109 , H01L31/0304
CPC分类号： H01L31/035263 , H01L31/022408 , H01L31/03046 , H01L31/032 , H01L31/035209 , H01L31/035236 , H01L31/035272 , H01L31/072 , H01L31/101 , H01L31/1013 , H01L31/109 , H01L31/1844 , Y02E10/544
摘要： Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.
摘要翻译：本公开的实施例涉及结合隧道结构的红外检测器装置。在一个实施例中，红外检测器装置包括第一接触层，与第一接触层相邻的吸收层，以及包括邻近吸收层的阻挡层和与阻挡层相邻的第二接触层的隧道结构。阻挡层具有定制的价带偏移，使得阻挡层在吸收层和阻挡层之间的界面处的价带偏移基本上与吸收层的价带偏移对准，并且在阻挡层和第二接触层之间的界面处的阻挡层高于第二接触层的导带偏移。

26. 发明申请

US20140374701A1 Superlattice Structures and Infrared Detector Devices Incorporating the Same 有权
标题翻译：超晶格结构和红外探测器装置
公开(公告)号：US20140374701A1
公开(公告)日：2014-12-25
申请号：US14313858
申请日：2014-06-24
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Yajun Wei
IPC分类号： H01L31/0352 , H01L31/0304
CPC分类号： H01L31/035236 , H01L31/03046 , H01L31/101 , Y02E10/544
摘要： Embodiments of strain-balanced superlattice infrared detector devices and their fabrication are disclosed. In one embodiment, an infrared detector device includes a first contact layer, and absorber superlattice region, a wider gap unipolar barrier region, and a second contact layer. The absorber superlattice region has a period defined by a first InAs layer, strain-balancing structure, a second InAs layer, and an InAsSb layer. The strain-balancing structure comprises an arbitrary alloy layer sequence containing at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. In another embodiment, the absorber superlattice region has a period defined by a first InAs layer, first strain-balancing structure, a second InAs layer, a first GaSb layer, a second strain-balancing structure, and a second GaSb layer. The first strain-balancing structure includes at least one constituent element of aluminum or phosphor, e.g., InGaAs, AlInAs InAsP. The second strain-balancing structure includes GaInSb and GaSb.
摘要翻译：公开了应变平衡超晶格红外检测器件及其制造的实施例。在一个实施例中，红外检测器装置包括第一接触层和吸收体超晶格区域，更宽的间隙单极性阻挡区域和第二接触层。吸收体超晶格区域具有由第一InAs层，应变平衡结构，第二InAs层和InAsSb层限定的周期。应变平衡结构包括含有至少一种铝或磷的构成元素的任意合金层序列，例如InGaAs，AlInAsInAsP。在另一个实施例中，吸收体超晶格区域具有由第一InAs层，第一应变平衡结构，第二InAs层，第一GaSb层，第二应变平衡结构和第二GaSb层限定的周期。第一应变平衡结构包括铝或磷的至少一种构成元素，例如InGaAs，AlInAsInAsP。第二应变平衡结构包括GaInSb和GaSb。

27. 发明授权

US08846432B2 Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same 有权
标题翻译：前照射屏障红外光电探测器及其制造方法
公开(公告)号：US08846432B2
公开(公告)日：2014-09-30
申请号：US13614433
申请日：2012-09-13
申请人： Robert A. Jones , David Forrai , Richard L. Rawe, Jr.
发明人： Robert A. Jones , David Forrai , Richard L. Rawe, Jr.
IPC分类号： H01L31/18
CPC分类号： H01L27/146 , B82Y20/00 , H01L27/14634 , H01L27/1465 , H01L27/1467 , H01L27/1469 , H01L27/14694 , H01L31/0232 , H01L31/03046 , H01L31/035236 , H01L31/101 , Y02E10/544
摘要： Frontside-illuminated barrier infrared photodetector devices and methods of fabrication are disclosed. In one embodiment, a frontside-illuminated barrier infrared photodetector includes a transparent carrier substrate, and a plurality of pixels. Each pixel of the plurality of pixels includes an absorber layer, a barrier layer on the absorber layer, a collector layer on the barrier layer, and a backside electrical contact coupled to the absorber layer. Each pixel has a frontside and a backside. The absorber layer and the barrier layer are non-continuous across the plurality of pixels, and the barrier layer of each pixel is closer to a scene than the absorber layer of each pixel. A plurality of frontside common electrical contacts is coupled to the frontside of the plurality of pixels, wherein the frontside of the plurality of pixels and the plurality of frontside common electrical contacts are bonded to the transparent carrier substrate.
摘要翻译：公开了前照射屏障红外光电检测器件及其制造方法。在一个实施例中，前照射屏障红外光电检测器包括透明载体衬底和多个像素。多个像素的每个像素包括吸收层，吸收层上的阻挡层，阻挡层上的集电极层和耦合到吸收层的背面电接触。每个像素都有前端和背面。吸收层和阻挡层在多个像素之间是不连续的，并且每个像素的势垒层比每个像素的吸收层更靠近场景。多个正面公共电触头耦合到多个像素的前侧，其中多个像素的前侧和多个前侧公共电触点被接合到透明载体基板。

28. 发明授权

US08687073B2 Multi-channel imaging devices 有权
标题翻译：多通道成像设备
公开(公告)号：US08687073B2
公开(公告)日：2014-04-01
申请号：US13623477
申请日：2012-09-20
申请人： L-3 Communications Cincinnati Electronics Corporation
发明人： Tristan van Hoorebeke , John Devitt
IPC分类号： H04N5/225
CPC分类号： H04N9/04 , G02B3/0068 , H01L27/14649 , H04N5/332 , H04N5/3415
摘要： A multi-channel imaging device is provided. The multi-channel imaging device comprises a focal plane array comprising an array of pixels configured to detect radiation in a predetermined wavelength band. Subsets of the array of pixels are arranged to define a plurality of unit cell image areas. The multi-channel imaging device also comprises a lens array comprising a plurality of lens elements configured to image a scene onto the plurality of unit cell image areas. The lens elements and the unit cell image areas define a plurality of unit cells comprising at least one lens element and at least one unit cell image area. Each of the plurality of unit cells is configured to create a complete image of the scene. Additionally, a plurality of unit cell filters corresponding to the plurality of unit cells is configured to filter radiation such that each unit cell is dedicated to an image channel is also provided.
摘要翻译：提供多通道成像装置。多通道成像装置包括焦平面阵列，其包括被配置为检测预定波长带中的辐射的像素阵列。排列像素阵列的子集，以限定多个单位像元区域。多通道成像装置还包括透镜阵列，其包括多个透镜元件，其被配置为将场景成像到多个单位图像区域上。透镜元件和单元单元图像区域限定包括至少一个透镜元件和至少一个单位单元图像区域的多个单位单元。多个单位单元中的每一个被配置为创建场景的完整图像。另外，与多个单元电池相对应的多个单位电池滤波器被配置为对辐射进行滤波，从而也提供每个单位电池专用于图像通道。

29. 发明申请

US20120326124A1 FRONTSIDE-ILLUMINATED INVERTED QUANTUM WELL INFRARED PHOTODETECTOR DEVICES 有权
标题翻译： FRONTSIDE-ILLUMINED INVEDTED QUANTUM好的红外光电转换装置
公开(公告)号：US20120326124A1
公开(公告)日：2012-12-27
申请号：US13605465
申请日：2012-09-06
申请人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
发明人： David Forrai , Darrel Endres , Robert Jones , Michael James Garter
IPC分类号： H01L31/0352
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/101
摘要： A method of fabricating a frontside-illuminated inverted quantum well infrared photodetector may include providing a quantum well wafer having a bulk substrate layer and a quantum material layer, wherein the quantum material layer includes a plurality of alternating quantum well layers and barrier layers epitaxially grown on the bulk substrate layer. The method further includes applying at least one frontside common electrical contact to a frontside of the quantum well wafer, bonding a transparent substrate to the frontside of the quantum well wafer, thinning the bulk substrate layer of the quantum well wafer, and etching the quantum material layer to form quantum well facets that define at least one pyramidal quantum well stack. A backside electrical contact may be applied to the pyramidal quantum well stack. In one embodiment, a plurality of quantum well stacks is bonded to a read-out integrated circuit of a focal plane array.
摘要翻译：制造前照射反向量子阱红外光电探测器的方法可以包括提供具有体基底层和量子材料层的量子阱晶片，其中量子材料层包括多个交替量子阱层和外延生长的势垒层大量衬底层。该方法还包括将至少一个正面公共电接触施加到量子阱晶片的前侧，将透明衬底接合到量子阱晶片的前侧，使量子阱晶片的体基底层变薄，并蚀刻量子材料以形成限定至少一个锥体量子阱堆叠的量子阱面。背面电接触可以应用于锥体量子阱堆叠。在一个实施例中，多个量子阱堆叠结合到焦平面阵列的读出集成电路。

30. 发明授权

US08300108B2 Multi-channel imaging devices comprising unit cells 有权
标题翻译：包括单元电池的多通道成像装置
公开(公告)号：US08300108B2
公开(公告)日：2012-10-30
申请号：US12364164
申请日：2009-02-02
申请人： Tristan van Hoorebeke , John Devitt
发明人： Tristan van Hoorebeke , John Devitt
IPC分类号： H04N5/225
CPC分类号： H04N9/04 , G02B3/0068 , H01L27/14649 , H04N5/332 , H04N5/3415
摘要： A multi-channel imaging device is provided. The multi-channel imaging device includes a focal plane array having an array of pixels configured to detect radiation in a predetermined wavelength band. Subsets of the array of pixels are arranged to define a plurality of unit cell image areas. The multi-channel imaging device also includes a lens array having a plurality of lens elements configured to image a scene onto the plurality of unit cell image areas. The lens elements and the unit cell image areas define a plurality of unit cells having at least one lens element and at least one unit cell image area. Each of the plurality of unit cells is configured to create a complete image of the scene. Additionally, a plurality of unit cell filters corresponding to the plurality of unit cells is configured to filter radiation such that each unit cell is dedicated to an image channel is also provided.
摘要翻译：提供多通道成像装置。多通道成像装置包括具有被配置为检测预定波长带中的辐射的像素阵列的焦平面阵列。排列像素阵列的子集，以限定多个单位像元区域。多通道成像装置还包括具有多个透镜元件的透镜阵列，所述多个透镜元件被配置为将场景成像到多个单位图像区域上。透镜元件和单元单元图像区域限定具有至少一个透镜元件和至少一个单位单元图像区域的多个单位单元。多个单位单元中的每一个被配置为创建场景的完整图像。另外，与多个单元电池相对应的多个单位电池滤波器被配置为对辐射进行滤波，从而也提供每个单位电池专用于图像通道。

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