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251. 发明授权

US6102993A Copper precursor composition and process for manufacture of microelectronic device structures 失效
标题翻译：铜前体组合物和微电子器件结构的制造方法
公开(公告)号：US6102993A
公开(公告)日：2000-08-15
申请号：US365913
申请日：1999-08-03
申请人： Gautam Bhandari , Thomas H. Baum , Chongying Xu
发明人： Gautam Bhandari , Thomas H. Baum , Chongying Xu
IPC分类号： C07C49/92 , C07F1/00 , C07F1/08 , C07F7/08 , C23C16/18 , H01L21/28 , H01L21/285 , C09K3/00 , B05D5/12
CPC分类号： H01L21/28556 , C07F1/005 , C07F1/08 , C07F7/082 , C23C16/18
摘要： Copper precursor formulations, including a copper precursor with at least one of (a) water, (b) a water precursor and (c) a non-ligand organic hydrate, are useful in CVD processes, e.g., in liquid delivery chemical vapor deposition, for forming a copper-containing material on a substrate. The disclosed copper precursor formulations are particularly useful in the formation of copper layers in semiconductor integrated circuits, e.g., for metallization of interconnections in such semiconductor device structures.
摘要翻译：包括具有（a）水，（b）水前体和（c）非配体有机水合物中的至少一种的铜前体的铜前体制剂可用于CVD工艺，例如在液体输送化学气相沉积中，用于在基底上形成含铜材料。所公开的铜前体配方在半导体集成电路中形成铜层特别有用，例如用于在这种半导体器件结构中互连的金属化。

252. 发明授权

US5948322A Source reagents for MOCVD formation of non-linear optically active metal borate films and optically active metal borate films formed therefrom 失效
标题翻译：用于MOCVD形成非线性光学活性金属硼酸盐膜和由其形成的光学活性金属硼酸盐膜的源试剂
公开(公告)号：US5948322A
公开(公告)日：1999-09-07
申请号：US838587
申请日：1997-04-10
申请人： Thomas H. Baum , Gregory Stauf , Daniel B. Studebaker , Brian A. Vaartstra
发明人： Thomas H. Baum , Gregory Stauf , Daniel B. Studebaker , Brian A. Vaartstra
IPC分类号： G02F1/355 , G02F1/35 , G02B5/20
CPC分类号： G02F1/3551
摘要： An MOCVD precursor composition useful for MOCVD formation of a non-linear optically active metal borate thin film, comprising: (I) an organometallic source reagent for a metal reactively forming a non-linear optically active metal borate, and (II) an organoborate compound of the formula: B(OR).sub.3, wherein each R is independently selected from H, alkyl, aryl, alkaryl, arylalkyl, alkenyl, fluoroalkyl, fluoroaryl, fluoroaralkyl, fluoroalkaryl, trialkylsilyl, and C.sub.5 -C.sub.8 carbocylic groups, as the aforementioned borate source reagent. Such composition may be employed for forming a non-linear optically active metal borate thin film on a substrate, via depositing by CVD on said substrate a metal from the organometallic source reagent and a borate from the organoborate compound, to react the metal with the borate and yield the non-linear optically active metal borate on the substrate. Non-linear optically active devices, such as data storage devices, laser printers, display panels, and communications devices, can be fabricated using the composition and method of the invention.
摘要翻译：一种用于MOCVD形成非线性光学活性金属硼酸盐薄膜的MOCVD前体组合物，包括：（I）反应性形成非线性光学活性金属硼酸盐的金属的有机金属源试剂，和（II）有机硼酸盐化合物其中每个R独立地选自H，烷基，芳基，烷芳基，芳基烷基，烯基，氟烷基，氟代芳基，氟代烷基，氟烷芳基，三烷基甲硅烷基和C5-C8碳环基，作为上述硼酸盐源试剂。这种组合物可用于在基底上形成非线性光学活性金属硼酸盐薄膜，通过CVD在所述基底上沉积来自有机金属源试剂的金属和来自有机硼酸盐化合物的硼酸盐，使金属与硼酸盐反应并在基板上产生非线性光学活性金属硼酸盐。可以使用本发明的组合物和方法来制造诸如数据存储设备，激光打印机，显示面板和通信设备的非线性光学有源设备。

253. 发明授权

US5902639A Method of forming bismuth-containing films by using bismuth amide compounds 失效
标题翻译：通过使用铋酰胺化合物形成含铋膜的方法
公开(公告)号：US5902639A
公开(公告)日：1999-05-11
申请号：US828566
申请日：1997-03-31
申请人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
发明人： Timothy E. Glassman , Gautam Bhandari , Thomas H. Baum
IPC分类号： C07F9/94 , C23C16/40 , G02F1/00 , G02F1/05 , C23C16/00
CPC分类号： G02F1/0027 , C07F9/94 , C23C16/40 , C23C16/407 , G02F1/0541 , G02F2203/12
摘要： A method of forming a bismuth-containing material layer on a substrate, comprising bubbler delivery or liquid delivery vaporization of a bismuth amide source reagent to form a bismuth-containing source vapor, and deposition on the substrate of bismuth from the bismuth-containing source vapor, to form the bismuth-containing material layer on the substrate. The bismuth amide source reagent may include a bismuth amide compound of the formula BiL.sup.1.sub.x L.sup.2.sub.y (NR.sup.1 R.sub.2).sub.z wherein: z is an integer of from 1 to 3; x+y+z=3; each of L.sup.1 and L.sup.2 is independently selected from C.sub.1 -C.sub.4 alkyl, C.sub.1 14 C.sub.4 alkoxide, .beta.-diketonate, cyclic amido, cyclic tris-alkoxoamine, and C.sub.6 -C.sub.10 aryl; and each of R.sup.1 and R.sup.2 is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 alkoxy, C.sub.6 -C.sub.8 cycloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.4 carboxyl, and --SiR.sup.3.sub.3 wherein each R.sup.3 is independently selected from H and C.sub.1 -C.sub.4 alkyl. Bismuth-containing films of the invention may be utilized in the construction of spatial light modulator devices, as buffer layers for the fabrication of ferroelectric material devices, and in dielectric, ferroelectric and superconductor thin film applications.
摘要翻译：一种在基板上形成含铋材料层的方法，包括用于形成含铋源源蒸气的铋酰胺源试剂的起泡器输送或液体输送蒸发，以及从含铋源源蒸气在铋基底上沉积以在基板上形成含铋材料层。铋酰胺源试剂可以包括式BiL1xL2y（NR1R2）z的铋酰胺化合物其中：z是1至3的整数; x + y + z = 3; L1和L2各自独立地选自C 1 -C 4烷基，C 11-14 C 4醇盐，β-二酮酸盐，环状酰胺基，环状三烷氧基胺和C 6 -C 10芳基; R 1和R 2各自独立地选自C 1 -C 8烷基，C 1 -C 8烷氧基，C 6 -C 8环烷基，C 6 -C 10芳基，C 1 -C 4羧基和-SiR 33，其中每个R 3独立地选自H和C 1 -C 4 烷基。本发明的含铋膜可用于构造空间光调制器件，作为用于制造铁电材料器件的缓冲层，以及介电，铁电和超导体薄膜应用。

254. 发明授权

US5820664A Precursor compositions for chemical vapor deposition, and ligand exchange resistant metal-organic precursor solutions comprising same 失效
标题翻译：用于化学气相沉积的前体组合物和包含其的配体交换金属 - 有机前体溶液
公开(公告)号：US5820664A
公开(公告)日：1998-10-13
申请号：US414504
申请日：1995-03-31
申请人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
发明人： Robin A. Gardiner , Peter S. Kirlin , Thomas H. Baum , Douglas Gordon , Timothy E. Glassman , Sofia Pombrik , Brian A. Vaartstra
IPC分类号： C23C16/18 , C23C16/40 , C23C16/448 , G02B6/036 , H01L39/24 , C09K3/00
CPC分类号： H01L39/2441 , C23C16/18 , C23C16/40 , C23C16/408 , C23C16/409 , C23C16/4481 , C23C16/45561 , Y10S423/14
摘要： A metal source reagent liquid solution, comprising: (i) at least one metal coordination complex including a metal to which is coordinatively bound at least one ligand in a stable complex, wherein the ligand is selected from the group consisting of: .beta.-diketonates, .beta.-ketoiminates, .beta.-diiminates, C.sub.1 -C.sub.8 alkyl, C.sub.2 -C.sub.10 alkenyl, C.sub.2 -C.sub.15 cycloalkenyl, C.sub.6 -C.sub.10 aryl, C.sub.1 -C.sub.8 alkoxy, and fluorinated derivatives thereof; and (ii) a solvent for the metal coordination complex. The solutions are usefully employed for chemical vapor deposition of metals from the metal coordination complexes, such as Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, and/or Yb. The solvent may comprise glyme solvents, alkanols, organic ethers, aliphatic hydrocarbons, and/or aromatic hydrocarbons. Solutions of the invention having two or more metal coordination complexes are resistant to detrimental ligand exchange reactions which adversely affect the stability and/or volatilizability of the metal complex for CVD applications.
摘要翻译：一种金属源试剂液体溶液，其包含：（i）至少一种金属配位络合物，其包含与稳定络合物中的至少一种配位体配位结合的金属，其中所述配体选自β-二酮化合物， β-酮基，β-二亚胺，C 1 -C 8烷基，C 2 -C 10烯基，C 2 -C 15环烯基，C 6 -C 10芳基，C 1 -C 8烷氧基及其氟化衍生物; 和（ii）金属配位络合物的溶剂。该溶液有效地用于金属配位络合物如Mg，Ca，Sr，Ba，Sc，Y，La，Ce，Ti，Zr，Hf，Pr，V，Nb，Ta，Nd的金属化学气相沉积，Cr，W，Pm，Mn，Re，Sm，Fe，Ru，Eu，Co，Rh，Ir，Gd，Ni，Tb，Cu，Dy，Ho，Al，Tl，Er，Sn，Pb，Tm，Bi ，和/或Yb。溶剂可以包括甘醇二甲醚溶剂，链烷醇，有机醚，脂族烃和/或芳族烃。具有两种或更多种金属配位络合物的本发明的溶液对有害的配体交换反应具有抗性，这对于CVD应用的金属络合物的稳定性和/或挥发性是不利的。

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