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201. 发明授权

US06559328B2 Indium source reagent compositions, and use thereof for deposition of indium-containing films on substrates and ion implantation of indium-doped shallow junction microelectronic structures 失效
标题翻译：铟源试剂组合物及其在衬底上沉积含铟膜的用途和铟掺杂浅结微电子结构的离子注入
公开(公告)号：US06559328B2
公开(公告)日：2003-05-06
申请号：US09825037
申请日：2001-04-03
申请人： Thomas H. Baum , Chongying Xu
发明人： Thomas H. Baum , Chongying Xu
IPC分类号： C07F500
CPC分类号： H01L21/28556 , C07F5/00 , C23C16/18 , H01L21/26513 , Y10S427/101
摘要： An indium precursor composition having utility for incorporation of indium in a microelectronic device structure, e.g., as an indium-containing film on a device substrate by bubbler or liquid delivery MOCVD techniques, or as a dopant species incorporated in a device substrate by ion implantation techniques. The precursor composition includes a precursor of the formula R1R2InL wherein: R1 and R2 may be same or different and are independently selected from C6-C10 aryl, C6-C10 fluoroaryl, C6-C10 perfluoroaryl, C1-C6 alkyl, C1-C6 fluoroalkyl, or C1-C6 perfluoroalkyl; and L is &bgr;-diketonato or carboxylate. Indium-containing metal films may be formed on a substrate, such as indium-copper metallization, and shallow junction indium ion-implanted structures may be formed in integrated circuitry, using the precursors of the invention.
摘要翻译：铟前体组合物可用于在微电子器件结构中掺入铟，例如通过起泡器或液体输送MOCVD技术作为器件衬底上的含铟膜，或通过离子注入技术掺入器件衬底中的掺杂剂物质。前体组合物包含式R1R2InL的前体，其中R1和R2可以相同或不同并且独立地选自C 6 -C 10芳基，C 6 -C 10氟芳基，C 6 -C 10全氟芳基，C 1 -C 6烷基，C 1 -C 6氟代烷基，或C 1 -C 6全氟烷基; L是β-二酮或羧酸酯。含铟金属膜可以形成在诸如铟 - 铜金属化的衬底上，并且可以使用本发明的前体在集成电路中形成浅结铟离子注入结构。

202. 发明授权

US06500238B1 Fluid storage and dispensing system 有权
标题翻译：流体储存和分配系统
公开(公告)号：US06500238B1
公开(公告)日：2002-12-31
申请号：US09635880
申请日：2000-08-10
申请人： George R. Brandes , Thomas H. Baum , Michael A. Tischler
发明人： George R. Brandes , Thomas H. Baum , Michael A. Tischler
IPC分类号： B01D5304
CPC分类号： B01D53/053 , B01D53/04 , B01D2253/102 , B01D2253/104 , B01D2253/106 , B01D2253/1085 , B01D2253/304 , B01D2253/308 , B01D2258/0216 , B01D2259/40098 , F17C11/00 , F17C2205/0338 , F17C2205/0391 , F17C2270/0518
摘要： A system for storage and dispensing of a sorbate fluid, in which a sorbate fluid is sorptively retained on a sorbent medium and desorption of sorbate fluid from the sorbent medium is facilitated by inputting energy to the sorbent medium including one or more of the following energy input modes: (a) thermal energy input including inductive heating of the sorbent medium, resistive heating of the sorbent medium and/or chemical reaction heating of the sorbent medium; (b) photonic energy input to the sorbent medium; (c) particle bombardment of the sorbent medium; (d) mechanical energy input to the sorbent medium; and (e) application of a chemical potential differential to the sorbate fluid on the sorbent medium.
摘要翻译：一种用于存储和分配山梨酸液体的系统，其中将吸附剂流体吸附保持在吸附剂介质上并且从吸附剂介质中解吸吸附剂流体是通过将能量输入到吸附剂介质来促进的，包括一个或多个以下能量输入模式：（a）热能输入，包括吸附剂介质的感应加热，吸附剂介质的电阻加热和/或吸附剂介质的化学反应加热; （b）输入到吸附介质的光能; （c）吸附剂介质的粒子轰击; （d）输入到吸附剂介质的机械能; 和（e）向吸附剂介质上的山梨酸流体施加化学势差。

203. 发明授权

US06440202B1 Pyrazolate copper complexes, and MOCVD of copper using same 失效
公开(公告)号：US06440202B1
公开(公告)日：2002-08-27
申请号：US10015359
申请日：2001-12-13
申请人： Chongying Xu , Thomas H. Baum , Ziyun Wang
发明人： Chongying Xu , Thomas H. Baum , Ziyun Wang
IPC分类号： C23C1618
CPC分类号： C23C16/18 , C07F1/08 , C07F7/0803
摘要： Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.

204. 发明授权

US06379748B1 Tantalum amide precursors for deposition of tantalum nitride on a substrate 失效
标题翻译：用于在衬底上沉积氮化钽的钽酰胺前体
公开(公告)号：US06379748B1
公开(公告)日：2002-04-30
申请号：US09483859
申请日：2000-01-17
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C23C1406
CPC分类号： C30B25/02 , C07F9/005 , C23C16/18 , C23C16/30 , C23C16/34 , C30B25/105 , C30B29/38
摘要： Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microelectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.
摘要翻译：描述了钽和钛源试剂，包括用于通过诸如化学气相沉积，辅助化学气相沉积，离子注入，分子束外延和快速热处理的方法在衬底上沉积氮化钽材料的钽酰胺和钽氮化硅前体。可以使用前体在微电子器件结构上形成扩散阻挡层，使得能够在器件结构中使用铜金属化和铁电薄膜。

205. 发明授权

US06331211B1 Method and apparatus for forming low dielectric constant polymeric films 失效
标题翻译：用于形成低介电常数聚合物膜的方法和装置
公开(公告)号：US06331211B1
公开(公告)日：2001-12-18
申请号：US09635866
申请日：2000-08-10
申请人： Chongying Xu , Thomas H. Baum , Ralph J. Carl , Edward A. Sturm
发明人： Chongying Xu , Thomas H. Baum , Ralph J. Carl , Edward A. Sturm
IPC分类号： C23C1600
CPC分类号： B05D1/60 , C23C16/4481
摘要： A method and apparatus for forming a low dielectric constant polymeric film on a substrate, by liquid delivery of a parylene precursor reagent, in the form of an organic solution or a neat liquid, subsequent flash vaporization of the neat liquid or organic solution, pyrolytic “cracking” of the precursor to form the reactive monomer and/or reactive radical species, and condensation and polymerization of the monomer and/or reactive radical species to form a low dielectric constant polymeric film on the substrate. The low dielectric constant polymeric film may comprise a parylene film, formed from a precursor such as [2.2]paracyclophane, an alkyl- and/or halo-substituted derivative thereof, or an analogous compound of a p-xylene derivative.
摘要翻译：一种用于在基底上形成低介电常数聚合物膜的方法和装置，通过以有机溶液或纯液体的形式液体递送聚对二甲苯前体试剂，随后的纯液体或有机溶液闪蒸，热解“ 裂解“前体以形成反应性单体和/或反应性基团物质，以及单体和/或反应性基团物质的缩合和聚合，以在基底上形成低介电常数聚合物膜。低介电常数聚合物膜可以包含由前体例如[2.2]对环烷烃，其烷基和/或卤素取代的衍生物或对二甲苯衍生物的类似化合物形成的对二甲苯膜。

206. 发明授权

US06319565B1 Stable hydride source compositions for manufacture of semiconductor devices and structures 有权
标题翻译：用于制造半导体器件和结构的稳定的氢化物源组合物
公开(公告)号：US06319565B1
公开(公告)日：2001-11-20
申请号：US09603597
申请日：2000-06-26
申请人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
发明人： Michael A. Todd , Thomas H. Baum , Gautam Bhandari
IPC分类号： C23C800
CPC分类号： C23C16/448 , C01B4/00 , C01B6/02 , C01B6/06 , C23C16/18 , F17C11/00 , F17C2203/0648 , F17C2270/0518 , H01L21/0237 , H01L21/02538 , H01L21/02549 , H01L21/0262 , Y02E60/321
摘要： A metal hydride derivative wherein at least one hydrogen atom is replaced by deuterium (21H) or tritium (31H) isotope. The metal constituent of such metal hydride may, be a Group III, IV or V metal or a transition metal, e.g., antimony, aluminum, gallium, tin, or germanium. The isotopically stabilized metal hydride derivatives of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing.
摘要翻译：金属氢化物衍生物，其中至少一个氢原子被氘（21H）或氚（31H）同位素代替。这种金属氢化物的金属成分可以是III，IV或V族金属或过渡金属，例如锑，铝，镓，锡或锗。本发明的同位素稳定的金属氢化物衍生物可用作化学气相沉积，辅助化学气相沉积（例如激光辅助化学气相沉积，光辅助化学气相沉积，等离子体辅助化学气相沉积和离子 - 辅助化学气相沉积），离子注入，分子束外延和快速热处理。

207. 发明授权

US06218518B1 Tetrahydrofuran-adducted group II &bgr;-diketonate complexes as source reagents for chemical vapor deposition 失效
标题翻译：四氢呋喃加成的II族β-二酮络合物作为化学气相沉积的原料
公开(公告)号：US06218518B1
公开(公告)日：2001-04-17
申请号：US09321637
申请日：1999-05-28
申请人： Thomas H. Baum , Witold Paw
发明人： Thomas H. Baum , Witold Paw
IPC分类号： C07F500
CPC分类号： C07F3/003 , C23C16/409
摘要： Group II metal MOCVD precursor compositions are described having utility for MOCVD of the corresponding Group II metal-containing films. The complexes are Group II metal &bgr;-diketonate adducts of the formula M(&bgr;-diketonate)2(L)4 wherein M is the Group II metal and L is tetrahydrofuran. Such source reagent complexes of barium and strontium are usefully employed in the formation of barium strontium titanate and other Group II thin films on substrates for microelectronic device applications, such as integrated circuits, ferroelectric memories, switches, radiation detectors, thin-film capacitors, microelectromechanical structures (MEMS) and holographic storage media.
摘要翻译：描述了II类金属MOCVD前体组合物用于相应的含II族金属膜的MOCVD。络合物是式M（β-二酮酸酯）2（L）4的II族金属β-二酮加成物，其中M是第II族金属，L是四氢呋喃。钡和锶的这种源试剂络合物可用于形成钛酸锶钡和其他用于微电子器件应用的基板上的II类薄膜，例如集成电路，铁电存储器，开关，辐射检测器，薄膜电容器，微机电结构（MEMS）和全息存储介质。

208. 发明授权

US06210781B1 Method for photoselective seeding and metallization of three-dimensional materials 失效
标题翻译：三维材料的光选播种和金属化方法
公开(公告)号：US06210781B1
公开(公告)日：2001-04-03
申请号：US09459850
申请日：1999-12-13
申请人： Thomas H. Baum , Luis J. Matienzo , Cindy Reidsema Simpson , Joseph E. Varsik
发明人： Thomas H. Baum , Luis J. Matienzo , Cindy Reidsema Simpson , Joseph E. Varsik
IPC分类号： B32B900
CPC分类号： B32B9/00 , C23C18/14 , H01L2924/0002 , H05K3/0082 , H05K3/105 , H05K3/185 , H05K3/403 , H05K2201/09645 , Y10S428/901 , Y10T428/24917 , H01L2924/00
摘要： A method is provided for selectively metallizing one or more three-dimensional materials in an electronic circuit package comprising the steps of forming a layer of seeding solution on a surface of the three-dimensional material of interest, exposing this layer to light of appropriate wavelength, resulting in the formation of metal seed on regions of the three-dimensional material corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper. Of additional significance, this method is ideal for plating three-dimensional materials such as cone-shaped connectors used in electronic circuit packages.
摘要翻译：提供了一种用于在电子电路封装中选择性地金属化一种或多种三维材料的方法，包括以下步骤：在感兴趣的三维材料的表面上形成接种溶液层，将该层暴露于适当波长的光，导致在与暴露于光的接种溶液层的区域相对应的三维材料的区域上形成金属种子; 通过使接种溶液层的暴露和未曝光区域经受碱溶液来除去接种溶液层的未曝光区域。此后，使用常规技术将另外的金属沉积，例如电镀到金属种子上。重要的是，该方法不涉及光致抗蚀剂或相应的化学显影剂或光致抗蚀剂剥离剂的使用。具有其他意义的是，该方法对于电子电路封装中使用的锥形连接器等三维材料的电镀是理想的。

209. 发明授权

US6111124A Lewis base adducts of anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same 有权
标题翻译：用于沉积含铋膜的无水单核三（β-二酮）铋组合物的路易斯碱加成物及其制备方法
公开(公告)号：US6111124A
公开(公告)日：2000-08-29
申请号：US224614
申请日：1998-12-31
申请人： Thomas H. Baum , Raymond H. Dubois
发明人： Thomas H. Baum , Raymond H. Dubois
IPC分类号： C07C49/92 , C07F9/94 , C23C16/18 , C23C16/40 , H01L21/316
CPC分类号： C23C16/409 , C07F9/94 , Y10S427/101
摘要： Anhydrous mononuclear Lewis base adducted tris(.beta.-diketonato) bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(.beta.-diketonato) bismuth complexes of the prior art.
摘要翻译：无水单核路易斯碱加合的三（β-二酮）铋络合物，可用作铋的化学气相沉积的前体，用于生产具有显着改善的化学计量，形态和功能特征的含Bi膜，与从二核三（β 二酮）铋络合物。

210. 发明授权

US6099653A Liquid reagent delivery system with constant thermal loading of vaporizer 失效
标题翻译：具有蒸发器恒定热负荷的液体试剂输送系统
公开(公告)号：US6099653A
公开(公告)日：2000-08-08
申请号：US989873
申请日：1997-12-12
申请人： Gautam Bhandari , Thomas H. Baum
发明人： Gautam Bhandari , Thomas H. Baum
IPC分类号： C23C16/40 , C23C16/448 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/409
摘要： A liquid reagent delivery and vaporization system, including a housing defining a flow passage for flow of a process fluid therethrough. A vaporizer element is positioned within the housing and includes a heated vaporization surface. Liquid reagent is selectively delivered to the heated vaporization surface, to vaporize the liquid reagent and form reagent vapor for flow through the flow passage of the housing, e.g., to a chemical vapor deposition reactor for deposition of a film on a substrate. A thermal damping fluid source is arranged to selectively deliver a thermal damping fluid into the flow passage to maintain a predetermined thermal condition therein. For example, the system may be arranged to selectively terminate delivery of liquid reagent to the vaporization surface and to contemporaneously selectively initiate delivery of the thermal damping fluid into the flow passage to maintain a thermal condition thermally matches the vaporization conditions when the liquid reagent is vaporized. The use of a thermal damping fluid prevents the occurrence of undesired thermal gradients in the system when the system is cyclically operated to vaporize reagent liquid.
摘要翻译：一种液体试剂递送和蒸发系统，包括限定用于流过其中的流体流动的流动通道的壳体。蒸发器元件位于壳体内并且包括加热的蒸发表面。液体试剂被选择性地输送到加热的蒸发表面，以蒸发液体试剂并形成用于流过壳体的流动通道的试剂蒸气，例如到化学气相沉积反应器，用于在基底上沉积膜。热阻尼流体源被布置成选择性地将热阻尼流体输送到流动通道中以在其中保持预定的热条件。例如，该系统可以被布置成选择性地将液体试剂的输送终止于蒸发表面，并且同时选择性地启动热阻尼流体进入流动通道的传递，以保持热条件与液体试剂蒸发时的蒸发条件热匹配。当系统循环操作以蒸发试剂液体时，使用热阻尼流体防止系统中出现不期望的热梯度。

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