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191. 发明授权

US08274811B2 Assisting FGL oscillations with perpendicular anisotropy for MAMR 有权
标题翻译：为MAMR协助垂直各向异性的FGL振荡
公开(公告)号：US08274811B2
公开(公告)日：2012-09-25
申请号：US12927699
申请日：2010-11-22
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/127 , G11C11/15 , G11C11/16 , H01L43/12
CPC分类号： H03B15/006 , B82Y40/00 , G11B5/3146 , G11B2005/0024 , G11C11/161 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/306 , H01L43/08 , Y10T29/49034 , Y10T428/11 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： A spin transfer oscillator (STO) structure is disclosed that includes two assist layers with perpendicular magnetic anisotropy (PMA) to enable a field generation layer (FGL) to achieve an oscillation state at lower current density for MAMR applications. In one embodiment, the STO is formed between a main pole and write shield and the FGL has a synthetic anti-ferromagnetic structure. The STO configuration may be represented by seed layer/spin injection layer (SIL)/spacer/PMA layer 1/FGL/spacer/PMA layer 2/capping layer. The spacer may be Cu for giant magnetoresistive (GMR) devices or a metal oxide for tunneling magnetoresistive (TMR) devices. Alternatively, the FGL is a single ferromagnetic layer and the second PMA assist layer has a synthetic structure including two PMA layers with magnetic moment in opposite directions in a seed layer/SIL/spacer/PMA assist 1/FGL/spacer/PMA assist 2/capping layer configuration. SIL and PMA assist layers are laminates of (CoFe/Ni)x or the like.
摘要翻译：公开了一种自旋转移振荡器（STO）结构，其包括具有垂直磁各向异性（PMA）的两个辅助层，以使场产生层（FGL）能够在较低电流密度下实现用于MAMR应用的振荡状态。在一个实施例中，STO形成在主极和写保护罩之间，并且FGL具有合成的反铁磁结构。 STO配置可以由种子层/自旋注入层（SIL）/间隔物/ PMA层1 / FGL /间隔物/ PMA层2 /覆盖层表示。间隔物可以是用于巨磁阻（GMR）器件的Cu或用于隧道磁阻（TMR）器件的金属氧化物。或者，FGL是单个铁磁层，并且第二PMA辅助层具有合成结构，其包括在籽晶层/ SIL /间隔物/ PMA辅助1 / FGL /间隔物/ PMA辅助2/2中具有相反方向的磁矩的两个PMA层，覆盖层配置。 SIL和PMA辅助层是（CoFe / Ni）x等的层压体。

192. 发明授权

US08256499B2 Heat dissipation device having fan holder for attachment of a fan 失效
标题翻译：具有用于安装风扇的风扇支架的散热装置
公开(公告)号：US08256499B2
公开(公告)日：2012-09-04
申请号：US12534883
申请日：2009-08-04
申请人： Min Li , Bi-Tao Wu
发明人： Min Li , Bi-Tao Wu
IPC分类号： F28F7/00 , H01L23/467 , H05K5/00
CPC分类号： H01L23/467 , H01L23/4006 , H01L2924/0002 , H01L2924/00
摘要： A heat dissipation device includes a heat sink, a fan and a holding frame securing the fan onto the heat sink. The holding frame is mounted on a top of the heat sink and has four beams located around the top of the heat sink and defines an opening in a central part thereof corresponding to the heat sink. The holding frame has two air-guiding plates extending inwardly and downwardly from two inner edges of two opposite beams to two opposite lateral sides of the heat sink. The fan is mounted on the holding frame and covers the opening and the two air-guiding plates of the holding frame.
摘要翻译：散热装置包括散热器，风扇和将风扇固定到散热器上的保持框架。保持框架安装在散热器的顶部，并且具有围绕散热器顶部的四个光束，并且在其对应于散热器的中心部分中限定开口。保持框架具有从两个相对的梁的两个内边缘向内和向下延伸到散热器的两个相对侧面的两个空气引导板。风扇安装在固定框架上并覆盖保持框架的开口和两个空气导向板。

193. 发明申请

US20120201297A1 IMAGE DECODING METHOD, IMAGE CODING METHOD, IMAGE DECODING APPARATUS, IMAGE CODING APPARATUS, PROGRAM, AND INTEGRATED CIRCUIT 有权
标题翻译：图像解码方法，图像编码方法，图像解码装置，图像编码装置，程序和集成电路
公开(公告)号：US20120201297A1
公开(公告)日：2012-08-09
申请号：US13502592
申请日：2010-10-29
申请人： Chong Soon Lim , Min Li , Hai Wei Sun , Youji Shibahara , Takahiro Nishi
发明人： Chong Soon Lim , Min Li , Hai Wei Sun , Youji Shibahara , Takahiro Nishi
IPC分类号： H04N7/12
CPC分类号： H04N19/44 , H04N19/126 , H04N19/176 , H04N19/463 , H04N19/61
摘要： An image decoding method including: obtaining an old quantization scaling matrix which is a decoded quantization scaling matrix and is used for decoding a new quantization scaling matrix; obtaining, from the coded stream, an update parameter indicating an amount of change in the new quantization scaling matrix with respect to the old quantization scaling matrix; decoding the new quantization scaling matrix using the old quantization scaling matrix obtained in the obtaining of an old quantization scaling matrix and the update parameter obtained in the obtaining of an update parameter; and decoding the coded image using the new quantization scaling matrix decoded in the decoding of the new quantization scaling matrix.
摘要翻译：一种图像解码方法，包括：获得作为解码的量化缩放矩阵的旧的量化缩放矩阵，并用于解码新的量化缩放矩阵; 从编码流中获取指示相对于旧的量化缩放矩阵的新量化缩放矩阵的变化量的更新参数; 使用在获得旧的量化缩放矩阵中获得的旧的量化缩放矩阵和在获得更新参数中获得的更新参数来解码新的量化缩放矩阵; 以及使用在新的量化缩放矩阵的解码中解码的新的量化缩放矩阵来解码编码图像。

194. 发明授权

US08210242B2 Heat dissipation device 失效
标题翻译：散热装置
公开(公告)号：US08210242B2
公开(公告)日：2012-07-03
申请号：US12492142
申请日：2009-06-26
申请人： Min Li , Lei Cao
发明人： Min Li , Lei Cao
IPC分类号： H05K7/20
CPC分类号： H01L23/3672 , F21K9/00 , F21V29/713 , F21V29/74 , F21Y2115/10 , F28F3/02 , H01L2924/0002 , H01L2924/00
摘要： A heat dissipation device adapted for removing heat from heat-generating components includes a plurality of first fins spaced from each other and connected to the heat-generating components in thermal relationship and a plurality of second fins alternately arranged with the first fins. Each second fin is wave-shaped and has a plurality of flat first engaging portions formed at wave crests thereof and a plurality of flat second engaging portions formed at wave troughs thereof. The first engaging portions are attached to a rear side of one of two first fins neighboring to each second fin. The second engaging portions are attached to a front side of another one of the two neighboring first fins.
摘要翻译：适用于从发热部件除去热量的散热装置包括彼此间隔开并与热关系的发热部件连接的多个第一散热片和与第一散热片交替布置的多个第二散热片。每个第二翅片是波形的，并且具有形成在其波峰处的多个平坦的第一接合部分和形成在其波谷处的多个平坦的第二接合部分。第一接合部附接到与每个第二翅片相邻的两个第一翅片之一的后侧。第二接合部分附接到两个相邻的第一散热片中的另一个的前侧。

195. 发明授权

US08208219B2 Modified field generation layer for microwave assisted magnetic recording 有权
标题翻译：微波辅助磁记录修改场产生层
公开(公告)号：US08208219B2
公开(公告)日：2012-06-26
申请号：US12927083
申请日：2010-11-05
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/3133 , G11B2005/001 , G11B2005/0024
摘要： A spin torque oscillator is described in which the conventional Field Generation Layer (FGL) is replaced by a bilayer, one of whose members exhibits perpendicular magnetic anisotropy while the other exhibits conventional in-plane anisotropy. Provided the layer with the perpendicular anisotropy is the one that is closest to the spacer layer, the device is able to generate microwaves at current densities as low as 1×108 A/cm2.
摘要翻译：描述了一种自旋扭矩振荡器，其中常规的场产生层（FGL）由双层代替，其中一个构件呈现垂直的磁各向异性，而另一个表现出常规的面内各向异性。如果具有垂直各向异性的层是最接近间隔层的层，该器件能够产生低至1×108A / cm 2的电流密度的微波。

196. 发明申请

US20120063903A1 COUPLING STRUCTURE 有权
标题翻译：耦合结构
公开(公告)号：US20120063903A1
公开(公告)日：2012-03-15
申请号：US13231696
申请日：2011-09-13
申请人： Zhi Ping FU , Min Li
发明人： Zhi Ping FU , Min Li
IPC分类号： F01D25/00
CPC分类号： F16J15/3464 , F04D29/20
摘要： A coupling structure for connecting an impeller to a motor shaft of a liquid pump, includes a carrier rod sleeved on the shaft, and a seal assembly connecting the carrier rod to a housing of the pump. The carrier rod is fixed to the shaft by way of a screw thread structure. The seal assembly includes a rotating seal sealingly fixed on an outer surface of the carrier rod and fixed to the carrier rod for rotation there with by an interlocking structure.
摘要翻译：用于将叶轮连接到液体泵的马达轴的联接结构包括套在轴上的承载杆和将承载杆连接到泵壳体的密封组件。承载杆通过螺纹结构固定在轴上。密封组件包括密封地固定在承载杆的外表面上并固定到承载杆上的旋转密封件，以通过联锁结构在那里旋转。

197. 发明申请

US20120009337A1 Novel CPP device with an enhanced dR/R ratio 审中-公开
标题翻译：具有增强的dR / R比的新型CPP装置
公开(公告)号：US20120009337A1
公开(公告)日：2012-01-12
申请号：US13200013
申请日：2011-09-15
申请人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
发明人： Kunliang Zhang , Min Li , Moris Dovek , Yue Liu
IPC分类号： G11B5/31 , C23C14/34
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.
摘要翻译：公开了具有由至少一个金属（M）层和至少一个半导体或半金属（S）层组成的复合间隔层的CPP-GMR自旋阀。复合间隔物可以具有M / S，S / M，M / S / M，S / M / S，M / S / M / S / M或多层（M / S / M）是整数≧1。钉扎层优选具有AP2 /耦合/ AP1配置，其中AP2部分是由CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z）表示的FCC三层，其中y为0至60原子％，z为75〜100原子％。在一个实施方案中，M是厚度为0.5至50埃的Cu，S是厚度为1至50埃的ZnO。 S层可以掺杂有一个或多个元素。自旋阀的dR / R比提高到10％以上，同时保持可接受的EM和RA性能。

198. 发明申请

US20110293967A1 Multilayer structure with high perpendicular anisotropy for device applications 有权
标题翻译：用于器件应用的具有高垂直各向异性的多层结构
公开(公告)号：US20110293967A1
公开(公告)日：2011-12-01
申请号：US12802091
申请日：2010-05-28
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/66 , B05D3/06
CPC分类号： G11B5/84 , G01R33/098 , G11B5/3932 , G11B5/66 , G11B5/732 , G11B5/7325 , G11B2005/0024 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , Y10T428/1114
摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one'embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.
摘要翻译：在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50），以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。在一个实施例中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。

199. 发明申请

US20110273800A1 Perpendicular magnetic recording write head with milling defined track width 有权
标题翻译：垂直磁记录写头具有铣削定义的轨道宽度
公开(公告)号：US20110273800A1
公开(公告)日：2011-11-10
申请号：US12799927
申请日：2010-05-05
申请人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
发明人： Kenichi Takano , Yuchen Zhou , Min Li , Joe Smyth
IPC分类号： G11B5/127 , C23C14/46
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/315 , G11B5/3163 , G11B2005/0024
摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.
摘要翻译：描述了至少具有前导锥形和微调极尖部分的主极层。即使对于接近50nm的窄轨道宽度，前导锥形也增加了顶场至≧15000 Oe。对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。此外，可以添加全侧屏蔽以减少边缘场。另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。提供了一种用于形成本发明的各种实施例的方法。一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

200. 发明申请

US20110265325A1 CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer 审中-公开
公开(公告)号：US20110265325A1
公开(公告)日：2011-11-03
申请号：US13135620
申请日：2011-07-11
申请人： Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
发明人： Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
IPC分类号： H01B19/00
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3106 , G11B5/313 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49227
摘要： A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes.

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