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11. 发明授权

US07738220B1 Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
标题翻译：磁阻效应元件，磁头，磁头组件，磁存储系统
公开(公告)号：US07738220B1
公开(公告)日：2010-06-15
申请号：US11779034
申请日：2007-07-17
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3932 , G11B5/66 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.
摘要翻译：一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向，在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层磁阻使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。

12. 发明授权

US07375405B2 Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element 有权
标题翻译：磁阻效应元件，磁头和使用巨磁阻效应元件的磁存储系统
公开(公告)号：US07375405B2
公开(公告)日：2008-05-20
申请号：US11079322
申请日：2005-03-15
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： H01L29/82 , H01L43/00 , G11B5/127
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译：包含自旋阀膜的磁阻效应（MR）装置，以及包含MR装置的磁头，磁头组件和磁记录/再现系统，其中自由层的磁化方向与磁化强度成一定角度当施加的磁场为零时，其中第二铁磁层的方向。钉扎磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。构成构成被钉扎磁性层的一对强磁性膜中的任一个的磁化方向被保持，并且非磁性高电导率层与第一铁磁层相邻的第一铁磁层相邻的一侧设置在与第一铁磁层接触的一侧相反的一侧具有非磁性间隔层。利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

13. 发明授权

US06088195A Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06088195A
公开(公告)日：2000-07-11
申请号：US827122
申请日：1997-03-27
申请人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
发明人： Yuzo Kamiguchi , Kazuhiro Saito , Hideaki Fukuzawa , Hiromi Fuke , Hitoshi Iwasaki , Masashi Sahashi
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01F10/08 , H01F10/12 , H01F10/13 , H01F10/16 , H01F10/18 , H01F10/187 , H01F10/32 , H01L43/08
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , H01F10/324 , H01F10/3281 , H01L43/08 , G11B2005/3996 , G11B5/3916 , G11B5/3932 , G11B5/3967 , H01F10/3295
摘要： A magnetoresistance effect element is provided with a laminated film which is composed of a first ferromagnetic conductive layer, a non-magnetic conductive layer superposed on the first ferromagnetic film, and a second ferromagnetic conductive layer superposed on the non-magnetic conductor layer, and which is provided with a pair of electrodes formed on the laminated film, wherein at least one of the first and second magnetic conductive layers comprises at least a first ferromagnetic layer and a second ferromagnetic film, for example, Co alloy films whose directions of axis of easy magnetization are different from each other. Furthermore, this element is a magnetoresistance effect element provided with a spin valve film having a non-magnetic layer disposed between a first magnetic layer composed of a laminated film of such a ferromagnetic film as a Co based magnetic alloy and a soft magnetic layer, and a second magnetic layer, wherein the soft magnetic layer is composed of a soft magnetic material laminated film of a soft magnetic material film of one kind or soft magnetic material films of two or more kinds, and values of their magnetization M.sub.s (T), film thickness d(nm), and anisotropic magnetic field H.sub.k (Oe) satisfy .SIGMA.(M.sub.s .times.d.times.H.sub.k)>30(Tnm Oe).
摘要翻译：磁阻效应元件设置有由第一铁磁性导电层，叠置在第一铁磁膜上的非磁性导电层和叠加在非磁性导体层上的第二铁磁性导电层构成的层叠膜，设置有形成在层压膜上的一对电极，其中第一和第二导电层中的至少一个至少包括第一铁磁层和第二铁磁膜，例如Co合金膜的方向的轴线方向磁化彼此不同。此外，该元件是具有自旋阀膜的磁阻效应元件，该自旋阀膜具有设置在由作为Co基磁性合金的这种铁磁膜的层叠膜构成的第一磁性层和软磁性层之间的非磁性层，以及第二磁性层，其中软磁性层由一种软磁性材料膜或两种或多种软磁性材料膜的软磁性材料层压膜及其磁化强度Ms（T），膜厚度d（nm）和各向异性磁场Hk（Oe）满足SIGMA（MsxdxHk）> 30（Tnm Oe）。

14. 发明授权

US06636399B2 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus 失效
公开(公告)号：US06636399B2
公开(公告)日：2003-10-21
申请号：US09927364
申请日：2001-08-13
申请人： Hitoshi Iwasaki , Yuzo Kamiguchi , Hiromi Fuke , Kazuhiro Saito , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuzo Kamiguchi , Hiromi Fuke , Kazuhiro Saito , Masashi Sahashi
IPC分类号： G11B5139
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G11B5/09 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01L27/222 , H01L43/08
摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness-of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.

15. 发明授权

US5999378A Magnetoresistance effect head having a giant magnetoresistance effect film 失效
标题翻译：具有巨磁阻效应膜的磁阻效应头
公开(公告)号：US5999378A
公开(公告)日：1999-12-07
申请号：US980871
申请日：1997-12-01
申请人： Kazuhiro Saito , Hiromi Fuke , Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Kawashima , Taro Oike , Koichi Terunuma , Haruyuki Morita
发明人： Kazuhiro Saito , Hiromi Fuke , Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Kawashima , Taro Oike , Koichi Terunuma , Haruyuki Morita
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A magnetoresistance effect head comprises a giant magnetoresistance effect film, a pair of leads to supply an electric current to the giant magnetoresistance effect head, and upper and lower magnetic shielding layers made of a crystalline soft magnetic film and disposed to hold the giant magnetoresistance effect film therebetween with a magnetic gap film intervened, wherein the surface roughness of an under layer of the giant magnetoresistance effect film is determined so that a center period L of the surface roughness satisfies L>70 nm.
摘要翻译：磁阻效应头包括巨磁阻效应膜，一对向巨磁电阻效应头供电的引线，以及由结晶软磁膜制成的上下磁屏蔽层，并设置成保持巨磁阻效应膜其间插入有磁隙膜，其中确定巨磁阻效应膜的下层的表面粗糙度，使得表面粗糙度的中心周期L满足L> 70nm。

16. 发明授权

US06690553B2 Magnetoresistance effect device, magnetic head therewith, magnetic recording/reproducing head, and magnetic storing apparatus 失效
标题翻译：磁电阻效应装置，磁头，磁记录/再现头和磁存储装置
公开(公告)号：US06690553B2
公开(公告)日：2004-02-10
申请号：US09837373
申请日：2001-04-19
申请人： Hitoshi Iwasaki , Yuzo Kamiguchi , Hiromi Fuke , Kazuhiro Saito , Masashi Sahashi
发明人： Hitoshi Iwasaki , Yuzo Kamiguchi , Hiromi Fuke , Kazuhiro Saito , Masashi Sahashi
IPC分类号： G11B5139
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , G11B5/09 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01L27/222 , H01L43/08
摘要： A magnetoresistance effect device comprises a magnetic multi-layer film having at least an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film, and a second ferromagnetic film formed in the order on the front surface portion of the substrate, the magnetic multi-layer film having giant magnetoresistance effect, at least the second ferromagnetic film having a shape corresponding to a magnetic field detecting portion. The bias magnetic field applying films are disposed on a conductive film of the magnetic multi-layer film at outer portions of both edge portions of the magnetic field detecting portion of the magnetoresistance effective film. Alternatively, the second ferromagnetic film has a first portion corresponding to the magnetic field detecting portion and a second portion corresponding to the outer portions of both the edge portions of the magnetic field detecting portion, the film thickness of the second portion being smaller than the film thickness of the first portion. The bias magnetic field applying films are formed at the outer portions of both the edge portions of the magnetic field detecting portion of the second ferromagnetic film. With the reversely structured magnetoresistance effect film and the laminate positions of the bias magnetic field applying films, in addition to suppressing the reproduction fringe and Barkhausen noise, the decrease of contact resistance, the suppression of insulation detect, and good linear response characteristic can be accomplished.
摘要翻译：磁阻效应器件包括至少具有反铁磁膜，第一铁磁膜，非磁性膜和在衬底的前表面部分上依次形成的第二铁磁膜的磁性多层膜，磁性多层膜至少第二铁磁膜具有与磁场检测部分对应的形状。偏磁场施加膜在磁阻效应膜的磁场检测部分的两个边缘部分的外部部分设置在磁性多层膜的导电膜上。或者，第二铁磁膜具有对应于磁场检测部分的第一部分和对应于磁场检测部分的两个边缘部分的外部的第二部分，第二部分的膜厚度小于膜第一部分的厚度。偏磁场施加膜形成在第二铁磁膜的磁场检测部分的两个边缘部分的外部。利用反向结构的磁阻效应膜和偏置磁场施加膜的叠层位置，除了抑制再生条纹和巴克豪森噪声之外，还可以实现接触电阻的降低，绝缘检测的抑制和良好的线性响应特性。

17. 发明授权

US06256863B1 Yoke type magnetoresistance head and manufacturing method of the same 失效
标题翻译：轭型磁阻头及其制造方法
公开(公告)号：US06256863B1
公开(公告)日：2001-07-10
申请号：US08815179
申请日：1997-03-11
申请人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
发明人： Kazuhiro Saito , Akiko Saito , Hitoshi Iwasaki , Akihiko Tsutai , Hiroaki Yoda , Tadahiko Kobayashi , Yuichi Ohsawa , Masahi Sahashi , Yuzo Kamiguchi
IPC分类号： G11B542
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3113 , G11B5/3163 , G11B5/3903 , G11B5/3916 , G11B2005/3996 , Y10T29/49034
摘要： A magnetic yoke having a magnetic gap provided in the side of the surface facing the medium is disposed on the surface of a substrate. An MR film is disposed on the surface of the magnetic yoke substantially parallel to the substrate with a predetermined separation from the surface S facing the medium. At least both end portions of the MR film are magnetically coupled to the magnetic yoke. A pair of leads for supplying sensing current to the MR film have magnetic lead portions formed from the same magnetic layers as the magnetic yoke. The magnetic lead portions curb deterioration of MR head properties and yield reduction during formation of the leads. Furthermore, a bias magnetic field is applied to the magnetic yoke and the MR film at least during operation of the head. This bias magnetic field is for instance provided by a magnetic field induced by the electric current. Alternatively, a magnetic field induced by the electric current is applied while heat-processing the magnetic yoke. Magnetic anisotropy is induced to the magnetic yoke in a direction differing according to the position. This magnetic anisotropy curbs Barkhausen noise caused by the magnetic yoke.
摘要翻译：在基板的表面上设置具有设置在面向介质的表面侧的磁隙的磁轭。以与面向介质的表面S预定间隔的方式将磁性薄膜基本上平行于基板平行设置在磁轭的表面上。 MR膜的至少两个端部磁耦合到磁轭。用于向MR膜提供感测电流的一对引线具有由与磁轭相同的磁性层形成的磁性引线部分。磁性引线部分在引线形成期间抑制MR磁头特性的劣化和屈服减少。此外，至少在头部的操作期间，向磁轭和MR膜施加偏置磁场。该偏置磁场例如由电流引起的磁场提供。或者，在对磁轭进行加热处理的同时施加由电流引起的磁场。磁性各向异性在根据位置不同的方向上被引到磁轭上。这种磁各向异性限制了由磁轭引起的Barkhausen噪声。

18. 发明授权

US07443004B2 Magnetoresistance effect element, magnetic head and magnetic reproducing apparatus 有权
标题翻译：磁阻效应元件，磁头和磁再现装置
公开(公告)号：US07443004B2
公开(公告)日：2008-10-28
申请号：US11283873
申请日：2005-11-22
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： H01L29/82
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
摘要翻译：在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置非磁性中间层（18）。可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出，自由层和非磁背层。

19. 发明授权

US06395388B1 Magnetoresistance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06395388B1
公开(公告)日：2002-05-28
申请号：US09442032
申请日：1999-11-17
申请人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
发明人： Hitoshi Iwasaki , Yuichi Ohsawa , Reiko Kondoh , Susumu Hashimoto , Atsuhito Sawabe , Yuzo Kamiguchi , Masashi Sahashi , Hiromi Fuke
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , E05B17/2007 , E05B67/36 , E05C1/04 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , H01F10/324 , H01F10/325 , H01F10/3268 , H01F10/3286 , H01L43/08 , H01L43/10 , Y10S428/90 , Y10T70/498 , Y10T70/5319 , Y10T292/1025 , Y10T428/11 , Y10T428/1107 , Y10T428/26 , Y10T428/265
摘要： The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferromagnetic material to which an element is added, is provided at the interface between the ferromagnetic film and the antiferromagnetic film so as to improve the lattice matching, which results in the enhancement of the exchange coupling force, and a magnetoresistance effect element including such an exchange coupling film as described above, and an electrode for supplying a current to the ferromagnetic film which constitutes the exchange coupling film.
摘要翻译：本发明提供一种交换耦合膜，其具有由由Fe，Co和Ni的至少一种材料制成的铁磁膜和反铁磁膜构成的层叠膜结构，其中由铁磁材料制成的交换耦合膜，在铁磁膜和反铁磁膜之间的界面处设置元件，以改善晶格匹配，这导致交换耦合力的增强，以及包括如上所述的这种交换耦合膜的磁电阻效应元件以及用于向构成交换耦合膜的铁磁膜提供电流的电极。

20. 发明授权

US6064552A Magnetoresistive head having magnetic yoke and giant magnetoresistive element such that a first electrode is formed on the giant magnetoresistive element which in turn is formed on the magnetic yoke which acts as a second electrode 失效
标题翻译：具有磁轭和巨磁电阻元件的磁阻头，使得第一电极形成在巨磁电阻元件上，磁阻元件又形成在用作第二电极的磁轭上
公开(公告)号：US6064552A
公开(公告)日：2000-05-16
申请号：US42696
申请日：1998-03-17
申请人： Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Yoda
发明人： Hitoshi Iwasaki , Yuzo Kamiguchi , Masashi Sahashi , Hiroaki Yoda
IPC分类号： G11B5/31 , G11B5/39 , G11B5/40
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3919 , G11B5/3925 , G11B5/3948 , G11B5/3967 , G11B5/40 , G11B2005/3996 , G11B5/3156 , G11B5/3183
摘要： A magnetoresistive head comprising, a magnetic yoke defining a magnetic gap for guiding signal magnetic fields from a recording medium at the air-bearing surface, a giant magnetoresistive element magnetically coupled with the magnetic yoke at a position remote from the air-bearing surface, and means for supplying a sense current in a direction substantially perpendicular to the surface of the giant magnetoresistive element.
摘要翻译：一种磁阻头，包括：限定用于引导来自空气轴承表面的记录介质的信号磁场的磁隙的磁轭;在远离空气轴承表面的位置处与磁轭磁耦合的巨磁阻元件，以及用于在基本垂直于巨磁阻元件的表面的方向上提供感测电流的装置。

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