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11. 发明申请

US20090204252A1 SUBSTRATE PROCESSING METHOD AND APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND STORAGE MEDIUM 审中-公开
标题翻译：基板处理方法和装置，制造半导体器件和存储介质的方法
公开(公告)号：US20090204252A1
公开(公告)日：2009-08-13
申请号：US12391852
申请日：2009-02-24
申请人： Hidenori MIYOSHI , Kenji Ishikawa , Hideki Tateishi , Masakazu Hayashi , Nobuyuki Nishikawa
发明人： Hidenori MIYOSHI , Kenji Ishikawa , Hideki Tateishi , Masakazu Hayashi , Nobuyuki Nishikawa
IPC分类号： C23G1/02 , H01L21/34 , C09K3/00 , B01J19/00 , C23G1/00 , B08B5/00 , G06F17/00
CPC分类号： H01L21/02063 , H01L21/67207 , H01L21/76814 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A substrate processing method includes a first step of forming a metal complex by allowing a processing gas containing an organic compound to be adsorbed by a metal layer formed on a target substrate while setting the target substrate to be kept at a first temperature, and a second step of sublimating the metal complex by heating the target substrate to maintain it at a second temperature higher than the first temperature.
摘要翻译：基板处理方法包括：第一步骤，通过在将目标基板保持在第一温度的同时，使含有有机化合物的处理气体被形成在目标基板上的金属层吸附而形成金属络合物，通过加热目标基板使其维持在比第一温度高的第二温度升华金属络合物的步骤。

12. 发明授权

US4675096A Continuous sputtering apparatus 失效
标题翻译：连续溅射装置
公开(公告)号：US4675096A
公开(公告)日：1987-06-23
申请号：US645671
申请日：1984-08-30
申请人： Hideki Tateishi , Tamotsu Shimizu , Susumu Aiuchi , Katsuhiro Iwashita , Hiroshi Nakamura
发明人： Hideki Tateishi , Tamotsu Shimizu , Susumu Aiuchi , Katsuhiro Iwashita , Hiroshi Nakamura
IPC分类号： B65G49/07 , C23C14/34 , C23C14/56 , H01L21/203 , C23C14/36
CPC分类号： C23C14/566 , C23C14/568
摘要： A continuous sputtering apparatus comprising a main vacuum chamber, one loading station and a plurality of process stations capable of having their pressures controlled separately. The process station includes a sub vacuum chamber capable of being in communication with the main vacuum chamber through an opening and an evacuation port. The loading station and the process stations are arranged to be spaced with equal angles. Substrate holders are provided to face the stations and are rotated by said equal angle in a time. The substrate holder opens and closes the opening of the sub vacuum chamber to serve as a gate valve.
摘要翻译：一种连续溅射装置，包括主真空室，一个装载站和能够分别控制其压力的多个处理站。处理站包括能够通过开口和排气口与主真空室连通的副真空室。装载站和处理站被布置为以相等角度间隔开。基板保持器被设置成面对车站，并且在一段时间内以相等的角度旋转。基板保持器打开和关闭副真空室的开口以用作闸阀。

13. 发明授权

US4405435A Apparatus for performing continuous treatment in vacuum 失效
标题翻译：用于在真空中进行连续处理的装置
公开(公告)号：US4405435A
公开(公告)日：1983-09-20
申请号：US296314
申请日：1981-08-26
申请人： Hideki Tateishi , Tsuneaki Kamei , Katsuo Abe , Shigeru Kobayashi , Susumu Aiuchi , Masashi Nakatsukasa , Nobuyuki Takahashi , Ryuji Sugimoto
发明人： Hideki Tateishi , Tsuneaki Kamei , Katsuo Abe , Shigeru Kobayashi , Susumu Aiuchi , Masashi Nakatsukasa , Nobuyuki Takahashi , Ryuji Sugimoto
IPC分类号： B01J3/00 , C23C14/56 , C23C15/00
CPC分类号： B01J3/006 , C23C14/566 , Y10S414/137 , Y10S414/139
摘要： An apparatus for performing continuous treatment in vacuum including an inlet chamber, a first intermediate chamber, at least one vacuum treating chamber, a second intermediate chamber and a withdrawing chamber arranged in the indicated order in a direction in which base plates are successively transferred. An opening device normally closed and opened when a base plate is transferred therethrough is mounted on a wall at the inlet of the inlet chamber, between the adjacent chambers and on a wall at the outlet side of the withdrawing chamber. A conveyor device for conveying each base plate in a horizontal direction through the opening device is mounted in each of the chambers, and an evacuating device is also mounted in each chamber. A base plate storing device for storing a plurality of base plates in a magazine is mounted in the first and second intermediate chambers. At least one vacuum treating device is mounted in the vacuum treating chamber.
摘要翻译：一种用于在真空中进行连续处理的装置，包括入口室，第一中间室，至少一个真空处理室，第二中间室和排出室，其按照依次传送基板的方向以指示的顺序排列。安装在入口室入口的壁上，在相邻的室之间和在抽出室的出口侧的壁上的壁上安装有一个通常关闭和打开底板的打开装置。用于通过打开装置沿水平方向输送每个基板的输送装置安装在每个室中，并且排气装置也安装在每个室中。在第一和第二中间室中安装有用于将多个基板存储在盒中的基板存储装置。至少一个真空处理装置安装在真空处理室中。

14. 发明授权

US08357284B2 Method for forming metal film 有权
标题翻译：金属膜形成方法
公开(公告)号：US08357284B2
公开(公告)日：2013-01-22
申请号：US12977592
申请日：2010-12-23
申请人： Akira Susaki , Tsutomu Nakada , Hideki Tateishi
发明人： Akira Susaki , Tsutomu Nakada , Hideki Tateishi
IPC分类号： C25D5/12 , C25D5/10 , C25D5/34 , C25D5/38 , C25D5/44
CPC分类号： C25D3/38 , C25D3/12 , C25D5/38 , C25D5/42 , C25D5/44
摘要： A metal film-forming method is capable of forming a metal film on a surface of a base metal film, formed on a surface of a substrate, with sufficient adhesion to the base metal film even when a natural oxide film is formed on the surface of the base metal film. The metal film-forming method includes: preparing a substrate having a base metal film formed on a surface; and carrying out electroplating of the substrate using the base metal film as a cathode and another metal as an anode while immersing the substrate in a solution containing a metal complex and a reducing material, both dissolved in a solvent, to form a metal film, deriving from a metal contained in the metal complex, on the surface of the base metal film.
摘要翻译：金属膜形成方法能够在形成在基板表面上的基底金属膜的表面上形成金属膜，即使当在基体金属膜的表面上形成自然氧化膜时，也能够对基底金属膜具有足够的粘合力贱金属膜。金属膜形成方法包括：制备在表面上形成有贱金属膜的基板; 并且使用基底金属膜作为阴极和另一种金属作为阳极进行基板的电镀，同时将基板浸入含有溶解在溶剂中的金属络合物和还原材料的溶液中以形成金属膜，得到从包含在金属络合物中的金属在基底金属膜的表面上。

15. 发明授权

US4853102A Sputtering process and an apparatus for carrying out the same 失效
标题翻译：溅射过程和用于进行溅射的设备
公开(公告)号：US4853102A
公开(公告)日：1989-08-01
申请号：US137562
申请日：1987-12-24
申请人： Hideki Tateishi , Hiroshi Saito , Shinji Sasaki , Mitsuaki Horiuchi
发明人： Hideki Tateishi , Hiroshi Saito , Shinji Sasaki , Mitsuaki Horiuchi
IPC分类号： C23C14/35 , H01J37/32 , H01J37/34
CPC分类号： H01J37/32623 , C23C14/351 , H01J37/32688 , H01J37/32706 , H01J37/3402
摘要： A sputtering process and an apparatus for carrying out the same for forming a film of a film forming material over the surface of a substrate. A target formed of the film forming material is held on a sputtering electrode receiving a voltage, and the substrate is disposed at a predetermined distance and opposite to the target. A high-density plasma is produced by producing a cusp field between the target and the substrate and a bias voltage is applied to the surface of the substrate to make ions of the high-density plasma fall on the surface of the substrate in order to make the particles of the film forming material sputtered from the target deposit in a thin film over the surface of the substrate.

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