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    • 18. 发明授权
    • Optical disk recording method and device
    • 光盘记录方法及装置
    • US06222815B1
    • 2001-04-24
    • US09260164
    • 1999-03-01
    • Takashi Nagano
    • Takashi Nagano
    • G11B700
    • G11B7/126G11B7/0037G11B7/0045
    • In an optical disk recording device for irradiating a recording light beam onto an optical disk to form pits having lengths ranging from 3Ts to 11Ts (where T represents a length of a unit time period in a longitudinal direction of a pit track), a sample and hold circuit samples and holds levels of a reflection signal, representative of a reflection of the recording light beam from the optical disk, for a predetermined time period between points of 1T and 3Ts after the start of a rising edge of the reflection signal. Comparator circuit makes a comparison between the sampled and held levels of the reflection signal and a predetermined reference level. Automatic laser power control circuit controls the power of the recording light beam on the basis of a result of the comparison by the comparator circuit. With such an arrangement, the recording power of the light beam can be controlled promptly with increased accuracy.
    • 在用于将记录光束照射到光盘上以形成长度范围为3T至11Ts(其中T表示凹坑轨道的纵向方向上的单位时间长度)的凹坑的光盘记录装置中, 保持电路采样,并且在反射信号的上升沿开始之后,在1T和3Ts的点之间的预定时间段内保持表示来自光盘的记录光束的反射的反射信号的电平。 比较器电路对反射信号的采样和保持电平与预定参考电平进行比较。 基于比较电路的比较结果,自动激光功率控制电路控制记录光束的功率。 通过这样的布置,可以以更高的精度快速地控制光束的记录功率。
    • 19. 发明授权
    • Pattern and method for measuring alignment error
    • 用于测量对准误差的图案和方法
    • US5861679A
    • 1999-01-19
    • US899863
    • 1997-07-24
    • Takashi Nagano
    • Takashi Nagano
    • G03F9/00H01L21/027H01L21/3205H01L21/66H01L23/52H01L23/544
    • H01L22/34H01L2924/0002
    • An alignment error measurement pattern includes a plurality of wiring patterns and a plurality of opening patterns formed in an insulating film covering the wiring patterns. The edges of the wiring patterns and the opening patterns correspond to each other to constitute sets, and distances between them are all different from one set to another. Corresponding wiring pattern and opening pattern in the same set are or are not in contact with each other depending on the alignment error between them. Therefore, the alignment error between the wiring pattern and the opening pattern can be electrically measured by checking the conduction state between them. Hence, an alignment error of a semiconductor device can be measured at high precision, and easily even after the manufacture.
    • 对准误差测量图案包括多个布线图案和形成在覆盖布线图案的绝缘膜中的多个开口图案。 布线图案和开口图案的边缘彼此对应以构成套件,并且它们之间的距离都是不同的。 根据它们之间的对准误差,相同组中的相应布线图案和开口图案彼此接触或不接触。 因此,可以通过检查它们之间的导通状态来电测量布线图案和开口图案之间的对准误差。 因此,可以高精度地测量半导体器件的对准误差,即使在制造之后也容易测量。