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    • 15. 发明授权
    • Light absorption measurement apparatus and methods
    • 光吸收测量装置及方法
    • US6108096A
    • 2000-08-22
    • US217332
    • 1998-12-21
    • Yoshijiro UshioToru NakamuraSumito ShimizuTetsuya Oshino
    • Yoshijiro UshioToru NakamuraSumito ShimizuTetsuya Oshino
    • G01N21/17G01N21/00
    • G01N21/1702
    • Apparatus and methods are disclosed for measuring changes in light absorption of a sample optical component. The sample is held in a sample holder in a sample chamber during irradiation by an intense light, usually pulsatile light. Molecules of a gas are introduced into the sample chamber as the sample is irradiated. The molecules can be of a material suspected to become adhered to or absorbed by the sample in a way that causes an undesired change in light absorption by the sample. Changes in light absorption by the sample are preferably measured photoacoustically. The molecules of the gas can be generated by controlled irradiation of a "source material" with a light (which can be the same as used to irradiate the sample) sufficient to generate such molecules of gas from the source material, and routing the gaseous molecules to the sample as the sample is irradiated.
    • 公开了用于测量样品光学部件的光吸收变化的装置和方法。 通过强光(通常是脉冲光)照射期间,将样品保持在样品室中的样品架中。 当照射样品时,将气体的分子引入样品室。 分子可以是怀疑被粘附或被样品吸收的材料,以导致样品的光吸收的不希望的变化的方式。 样品的光吸收变化优选是光声测量的。 气体的分子可以通过用能够从源材料产生这样的气体分子的光(其可以与用于照射样品的光相同)的受控照射“源材料”来产生,并且将气态分子 随着样品的照射而进入样品。
    • 16. 发明授权
    • Film inspection method
    • 电影检查方式
    • US6102775A
    • 2000-08-15
    • US62636
    • 1998-04-20
    • Yoshijiro UshioMotoo Koyama
    • Yoshijiro UshioMotoo Koyama
    • B24B37/013B24B49/04B24B49/12
    • B24B49/12B24B37/013B24B49/04
    • In the polishing apparatus and film inspection method, a polishing apparatus for polishing an object causes a relative movement between a polishing body and the polishing object. A polishing agent is then interposed between the polishing body and the polishing object. The polishing apparatus includes an optical measuring system capable of measuring at least one of a polished surface state of the polishing object or a film thickness of the polishing object and a position detection system capable of detecting relative positions of the optical measuring system and the polishing object. A control system is also included, and is capable of controlling at least one of the optical measuring system or the polishing object in accordance with position detection system signals so that prescribed endpoint detection regions of the polishing object are measured by the optical measuring system. A film thickness inspection method optically detects the film thickness of the outermost layer on a semiconductor substrate on which desired wiring patterns are formed in predetermined chip regions by laminating a plurality of layers. The film thickness inspection method includes selecting regions other than the chip regions on the semiconductor substrate, and the film thickness is optically detected by illuminating these regions with light.
    • 在抛光装置和膜检查方法中,用于抛光物体的抛光装置引起研磨体和抛光对象之间的相对移动。 然后将抛光剂插入在抛光体和抛光对象之间。 抛光装置包括能够测量抛光对象的抛光表面状态或抛光对象的膜厚度中的至少一个的光学测量系统以及能够检测光学测量系统和抛光对象的相对位置的位置检测系统 。 还包括控制系统,并且能够根据位置检测系统信号来控制光学测量系统或抛光对象中的至少一个,使得通过光学测量系统测量抛光对象的规定的端点检测区域。 薄膜厚度检查方法通过层叠多层光学地检测在预定的芯片区域中形成了所需布线图案的半导体基板上的最外层的膜厚度。 膜厚检查方法包括选择半导体衬底上的芯片区域以外的区域,通过用光照亮这些区域来光学检测膜厚度。
    • 17. 发明授权
    • Circuit forming method and apparatus therefor
    • 电路形成方法及其装置
    • US5641597A
    • 1997-06-24
    • US524478
    • 1995-09-07
    • Yoshijiro UshioTatsuo Niwa
    • Yoshijiro UshioTatsuo Niwa
    • G03G15/10G03G15/16G03G15/22H05K3/02H05K3/06G03G15/14G03G13/22
    • G03G15/1625H05K3/065
    • A circuit forming method having the step of forming, on an insulating board or a metallic foil layer, a resist pattern layer for patterning the metallic foil layer to be laminated to the board with a predetermined circuit by means of etching or lift-off, wherein the resist pattern layer forming step comprises the steps of forming an electric field distribution latent image corresponding to the circuit pattern by illuminating a predetermined area on a surface of a photoconductor charged beforehand with light for removing the charge of the surface of the photoconductor, forming a resist image corresponding to the circuit pattern by attaching a resist member charged reversely with respect to the latent image to the latent image, and transferring the resist image to the board or the metallic foil layer as the resist pattern layer.
    • 一种电路形成方法,具有在绝缘板或金属箔层上形成用于通过蚀刻或剥离以预定电路将要层压到所述基板上的金属箔层图案化的抗蚀剂图案层的步骤,其中 抗蚀剂图案层形成步骤包括以下步骤:通过照射预先充电的感光体的表面上的预定区域来形成与电路图案相对应的电场分布潜像,以除去感光体的表面的电荷,形成 通过将相对于潜像反向充电的抗蚀剂部件附着到潜像上,并将抗蚀剂图像转印到作为抗蚀剂图案层的基板或金属箔层上来抵抗与电路图案相对应的图像。