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11. 发明授权

US07338582B2 Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure 有权
标题翻译：使用所述氧化锰纳米结构制造氧化锰纳米结构和氧还原电极的方法
公开(公告)号：US07338582B2
公开(公告)日：2008-03-04
申请号：US11203994
申请日：2005-08-16
申请人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
发明人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
IPC分类号： C23C14/08
CPC分类号： B82Y30/00 , C01G45/02 , C01P2004/03 , C01P2004/32 , C01P2004/50 , C01P2004/64 , C01P2006/40 , H01M4/9016 , H01M2004/8689
摘要： It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of secondary particles which are aggregations of primary particles of manganese oxide, a target plate made of manganese oxide is irradiated with laser light to desorb the component substance of the target plate, and the desorbed substance is deposited on a substrate facing substantially parallel to the aforementioned target plate.
摘要翻译：本发明的目的是提供具有优异的氧还原催化能力的氧还原电极。在制造具有优异的氧还原催化能力的氧化锰纳米结构体的方法中，由作为氧化锰一次粒子的聚集体的二次粒子构成，用激光照射由氧化锰制成的靶板，以解吸目标物的成分物质并且解吸物质沉积在基本上平行于上述目标板的基板上。

12. 发明申请

US20060018821A1 Method for manufacturing manganese oxide nanostructure and oxygen reduction electrode using said manganese oxide nanostructure 有权
标题翻译：使用所述氧化锰纳米结构制造氧化锰纳米结构和氧还原电极的方法
公开(公告)号：US20060018821A1
公开(公告)日：2006-01-26
申请号：US11203994
申请日：2005-08-16
申请人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
发明人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
IPC分类号： C01G45/02 , C25B11/04 , H01M4/90
CPC分类号： B82Y30/00 , C01G45/02 , C01P2004/03 , C01P2004/32 , C01P2004/50 , C01P2004/64 , C01P2006/40 , H01M4/9016 , H01M2004/8689
摘要： It is an object of the present invention to provide an oxygen reduction electrode having excellent oxygen reduction catalysis ability. In a method of manufacturing a manganese oxide nanostructure having excellent oxygen reduction catalysis ability and composed of secondary particles which are aggregations of primary particles of manganese oxide, a target plate made of manganese oxide is irradiated with laser light to desorb the component substance of the target plate, and the desorbed substance is deposited on a substrate facing substantially parallel to the aforementioned target plate.
摘要翻译：本发明的目的是提供具有优异的氧还原催化能力的氧还原电极。在制造具有优异的氧还原催化能力的氧化锰纳米结构体的方法中，由作为氧化锰一次粒子的聚集体的二次粒子构成，用激光照射由氧化锰制成的靶板，以解吸目标物的成分物质并且解吸物质沉积在基本上平行于上述目标板的基板上。

13. 发明授权

US07566438B2 Method for manufacturing nanostructured manganese oxide having dendritic structure, and oxygen reduction electrode comprising nanostructured transition metal oxide having dendritic structure 有权
标题翻译：具有树枝状结构的纳米结构氧化锰的制造方法，具有树状结构的纳米结构过渡金属氧化物的氧还原电极
公开(公告)号：US07566438B2
公开(公告)日：2009-07-28
申请号：US11219714
申请日：2005-09-07
申请人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
发明人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
IPC分类号： C01G45/00
CPC分类号： C01G45/02 , C01P2004/04 , C01P2006/40 , C23C14/081 , C23C14/28 , H01M4/8825 , H01M4/9016 , Y10S977/811
摘要： An object of the present invention is to provide an oxygen reduction electrode having excellent oxygen reduction properties (oxygen reduction catalyst abilities).The present invention encompasses: (1) A method for manufacturing a nanostructured manganese oxide having a dendritic structure formed from an agglomeration of primary particles, wherein the method comprises the steps of: removing components from a target plate that comprises one or more kinds of manganese oxides by irradiating the target plate with laser light in an atmosphere comprising a mixed gas of inert gas and oxygen gas, the content of the oxygen gas in the mixed gas being no less than 0.05% but no more than 0.5% as measured by mass flow rate; and depositing the removed components on a substrate that is opposed to the target plate substantially in parallel to obtain the nanostructured manganese oxide, and (2) an oxygen reduction electrode comprising a nanostructured transition metal oxide having a dendritic structure formed from an agglomeration of primary particles.
摘要翻译：本发明的目的是提供具有优异的氧还原性（氧还原催化剂能力）的氧还原电极。本发明包括：（1）一种具有由一次粒子附聚形成的树枝状结构的纳米结构氧化锰的制造方法，其特征在于，包括以下步骤：从含有一种或多种锰的靶板中除去成分氧化物通过在包含惰性气体和氧气的混合气体的气氛中用激光照射靶板，混合气体中的氧气含量通过质量流量测量为不小于0.05％但不大于0.5％率; 并且将去除的组分沉积在基本上平行于靶板的基板上，以获得纳米结构的氧化锰，和（2）氧还原电极，其包含具有由一次粒子的聚集形成的树状结构的纳米结构过渡金属氧化物。

14. 发明申请

US20060243321A1 Semiconductor electrode, production process thereof and photovoltaic cell using semiconductor electrode 有权
公开(公告)号：US20060243321A1
公开(公告)日：2006-11-02
申请号：US11448917
申请日：2006-06-08
申请人： Yuka Yamada , Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki
发明人： Yuka Yamada , Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki
IPC分类号： H01L31/00
CPC分类号： B01J35/023 , B01J35/004 , H01G9/2027 , H01M14/005 , Y02E10/542 , Y02P70/521
摘要： An object of the present invention is to provide a photovoltaic cell that demonstrates a superior photoelectric conversion function. The present invention relates to a photovoltaic cell comprising a semiconductor electrode, an electrolyte and a counter electrode, wherein (1) the semiconductor electrode contains an oxide semiconductor layer having photocatalytic activity, (2) the oxide semiconductor layer contains secondary particles in which primary particles comprising a metal oxide are aggregated, (3) the average particle diameter of the primary particles is from 1 nm to 50 nm, and the average particle diameter of the secondary particles is from 100 nm to 10 μm, and (4) the photovoltaic cell generates electromotive force by radiating light of a wavelength substantially equal to the average particle diameter of the secondary particles onto the semiconductor electrode.

15. 发明申请

US20060001012A1 Method for manufacturing nanostructured manganese oxide having dendritic structure, and oxygen reduction electrode comprising nanostructured transition metal oxide having dendritic structure 有权
公开(公告)号：US20060001012A1
公开(公告)日：2006-01-05
申请号：US11219714
申请日：2005-09-07
申请人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
发明人： Nobuyasu Suzuki , Yasunori Morinaga , Hidehiro Sasaki , Yuka Yamada
IPC分类号： H01B1/00
CPC分类号： C01G45/02 , C01P2004/04 , C01P2006/40 , C23C14/081 , C23C14/28 , H01M4/8825 , H01M4/9016 , Y10S977/811
摘要： An object of the present invention is to provide an oxygen reduction electrode having excellent oxygen reduction properties (oxygen reduction catalyst abilities). The present invention encompasses: (1) A method for manufacturing a nanostructured manganese oxide having a dendritic structure formed from an agglomeration of primary particles, wherein the method comprises the steps of: removing components from a target plate that comprises one or more kinds of manganese oxides by irradiating the target plate with laser light in an atmosphere comprising a mixed gas of inert gas and oxygen gas, the content of the oxygen gas in the mixed gas being no less than 0.05% but no more than 0.5% as measured by mass flow rate; and depositing the removed components on a substrate that is opposed to the target plate substantially in parallel to obtain the nanostructured manganese oxide, and (2) an oxygen reduction electrode comprising a nanostructured transition metal oxide having a dendritic structure formed from an agglomeration of primary particles.

16. 发明申请

US20080248280A1 Process for Preparing a Dispersion Liquid of Zeolite Fine Particles 有权
标题翻译：沸石微粒分散液的制备方法
公开(公告)号：US20080248280A1
公开(公告)日：2008-10-09
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： B32B3/26 , C09K17/40 , H01L21/3105 , B05D3/02
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

17. 发明授权

US08017518B2 Method for manufacturing a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08017518B2
公开(公告)日：2011-09-13
申请号：US12341495
申请日：2008-12-22
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/00
CPC分类号： H01L21/76814 , H01L21/02063 , H01L21/3105 , H01L21/76825 , H01L21/76826 , H01L21/76831
摘要： A method for manufacturing a semiconductor device includes the steps of: (a) forming a low dielectric constant film over a semiconductor substrate; (b) forming a recess in the low dielectric constant film; (c) after the step (b), sequentially performing the steps of (c1) applying an organic solution to the low dielectric constant film and (c2) silylating the low dielectric constant film with a silylating solution; and (d) after the step (c), embedding a metal in the recess to form at least one of a via plug and a metal wiring in the low dielectric constant film. Performing the step (c1) before the step (c2) improves a penetration property of the silylating solution into the low dielectric constant film.
摘要翻译：一种制造半导体器件的方法包括以下步骤：（a）在半导体衬底上形成低介电常数膜; （b）在低介电常数膜中形成凹部; （c）在步骤（b）之后，顺序地执行步骤（c1）将有机溶液施加到低介电常数膜上，和（c2）用甲硅烷基化溶液甲硅烷基化低介电常数膜; 和（d）在步骤（c）之后，将金属嵌入凹槽中以在低介电常数膜中形成通孔塞和金属布线中的至少一个。在步骤（c2）之前执行步骤（c1）改善了甲硅烷基化溶液渗透到低介电常数膜中的渗透性。

18. 发明授权

US08486832B2 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08486832B2
公开(公告)日：2013-07-16
申请号：US11898140
申请日：2007-09-10
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.
摘要翻译：在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为电极。阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

19. 发明授权

US07923522B2 Process for preparing a dispersion liquid of zeolite fine particles 有权
标题翻译：制备沸石微粒分散液的方法
公开(公告)号：US07923522B2
公开(公告)日：2011-04-12
申请号：US12060291
申请日：2008-04-01
申请人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
发明人： Yoshitaka Hamada , Masaru Sasago , Hideo Nakagawa , Yasunori Morinaga
IPC分类号： C08G77/08
CPC分类号： H01L21/31695 , C01B39/04 , C23C18/1212 , C23C18/122 , C23C18/127 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , Y10T428/249953
摘要： The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.
摘要翻译：本发明提供了粒径稳定性优异且用于电子材料等的有机基团改性沸石微粒的制备方法。制备方法包括获得在结构导向剂存在下形成的含有粒径为80nm以下的沸石晶种的液体的第一步骤，添加含有机基的可水解硅烷化合物的第二步骤与第一步骤获得的液体相比，以及第三步骤，在比第一步高的温度下熟化第二步骤的液体。通过该方法获得的沸石细颗粒的分散液。

20. 发明授权

US06708390B2 Method for manufacturing magnetoresistive element 失效
标题翻译：制造磁阻元件的方法
公开(公告)号：US06708390B2
公开(公告)日：2004-03-23
申请号：US10421989
申请日：2003-04-23
申请人： Yoshio Kawashima , Akihiro Odagawa , Nozomu Matsukawa , Yasunari Sugita , Yasunori Morinaga
发明人： Yoshio Kawashima , Akihiro Odagawa , Nozomu Matsukawa , Yasunari Sugita , Yasunori Morinaga
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3254 , H01F10/3268 , H01F41/302 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044
摘要： The present invention provides a magnetoresistive element that can suppress the characteristic degradation even after high-temperature heat treatment, specifically at 400° C. to 450° C. This element is manufactured by a method that includes the following processes in the indicated order: a film formation process for forming at least a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer on a substrate; a preheat process at 330° C. to 380° C. for not less than 60 minutes; and a heat treatment process at 400° C. to 450° C. This element has a resistance value that changes with a change in relative angle formed by the magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer.
摘要翻译：本发明提供即使在高温热处理后，特别是在400℃〜450℃也能够抑制特性劣化的磁阻元件。该元件通过以下顺序制造方法：以下述方式制造：a 用于在基板上形成至少第一铁磁层，第二铁磁层和非磁性层的成膜工艺; 在330℃至380℃下预热不少于60分钟; 以及在400℃至450℃的热处理过程。该元件具有随着由第一铁磁层和第二铁磁层的磁化方向形成的相对角度的变化而变化的电阻值。

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