专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07819633B2 Sputter ion pump 有权
标题翻译：溅射离子泵
公开(公告)号：US07819633B2
公开(公告)日：2010-10-26
申请号：US11478421
申请日：2006-06-28
申请人： Li Qian , Jie Tang , Liang Liu , Jing Qi , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
发明人： Li Qian , Jie Tang , Liang Liu , Jing Qi , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
IPC分类号： F04B37/02
CPC分类号： F04B37/02 , F04B37/14 , H01J41/20
摘要： A sputter ion pump includes one vacuum chamber, two parallel anode poles and one cold cathode electron emitter. The vacuum chamber includes at least one aperture located in an outer wall thereof. The two parallel anode poles are positioned in the vacuum chamber and arranged in a symmetrical configuration about a center axis of the vacuum chamber. The cold cathode electron emission device is located on or proximate the outer wall of the vacuum chamber and faces a corresponding aperture. The cold cathode electron emission device is thus configured for injecting electrons through the corresponding aperture and into the vacuum chamber. The sputter ion pump produces a saddle-shaped electrostatic field and is free of a magnetic field. The sputter ion pump has a simplified structure and a low power consumption.
摘要翻译：溅射离子泵包括一个真空室，两个平行的阳极和一个冷阴极电子发射器。真空室包括位于其外壁中的至少一个孔。两个平行的阳极极位于真空室中，并以关于真空室的中心轴线的对称构型布置。冷阴极电子发射装置位于真空室的外壁上或靠近真空室的外壁并面对相应的孔。因此，冷阴极电子发射器件被配置用于通过相应的孔注入电子并进入真空室。溅射离子泵产生鞍形静电场并且没有磁场。溅射离子泵具有简化的结构和低功耗。

12. 发明授权

US07442941B2 Ion generator 有权
标题翻译：离子发生器
公开(公告)号：US07442941B2
公开(公告)日：2008-10-28
申请号：US11460610
申请日：2006-07-27
申请人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： H01J27/02 , H01J37/08 , G21K1/02
CPC分类号： H01J27/04
摘要： An ion generator (10) generally includes: a shielding shell (11), a cathode device (16), and an annular anode (14). The shielding shell has a first end (113), an opposite second end (115) and a main body (111) therebetween. The first end has an electron-input hole (13). The second end has an ion-output hole (15). The main body has a gas inlet (170) for introducing an ionizable gas (170). The cathode device faces the electron-input hole for emitting electrons to enter the shielding shell so as to ionize the ionizable gas thereby generating ions. The cathode device includes a conductive base (160) and at least one field emitter (161) thereon. The annular anode is arranged in the shielding shell. The anode is aligned with the ion-output hole.
摘要翻译：离子发生器（10）通常包括：屏蔽壳（11），阴极装置（16）和环形阳极（14）。屏蔽壳具有第一端（113），相对的第二端（115）和它们之间的主体（111）。第一端具有电子输入孔（13）。第二端具有离子输出孔（15）。主体具有用于引入可电离气体（170）的气体入口（170）。阴极器件面向用于发射电子的电子输入孔进入屏蔽壳，从而电离可电离气体，从而产生离子。阴极器件包括导电基底（160）和至少一个场致发射体（161）。环形阳极布置在屏蔽壳体中。阳极与离子输出孔对准。

13. 发明申请

US20070114475A1 ION GENERATOR 有权
标题翻译：离子发生器
公开(公告)号：US20070114475A1
公开(公告)日：2007-05-24
申请号：US11460610
申请日：2006-07-27
申请人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人： Li Qian , Jing Qi , Jie Tang , Liang Liu , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G21F3/00
CPC分类号： H01J27/04
摘要： An ion generator (10) generally includes: a shielding shell (11), a cathode device (16), and an annular anode (14). The shielding shell has a first end (113), an opposite second end (115) and a main body (111) therebetween. The first end has an electron-input hole (13). The second end has an ion-output hole (15). The main body has a gas inlet (170) for introducing an ionizable gas (170). The cathode device faces the electron-input hole for emitting electrons to enter the shielding shell so as to ionize the ionizable gas thereby generating ions. The cathode device includes a conductive base (160) and at least one field emitter (161) thereon. The annular anode is arranged in the shielding shell. The anode is aligned with the ion-output hole.
摘要翻译：离子发生器（10）通常包括：屏蔽壳（11），阴极装置（16）和环形阳极（14）。屏蔽壳具有第一端（113），相对的第二端（115）和它们之间的主体（111）。第一端具有电子输入孔（13）。第二端具有离子输出孔（15）。主体具有用于引入可电离气体（170）的气体入口（170）。阴极器件面向用于发射电子的电子输入孔进入屏蔽壳，从而电离可电离气体，从而产生离子。阴极器件包括导电基底（160）和至少一个场致发射体（161）。环形阳极布置在屏蔽壳体中。阳极与离子输出孔对准。

14. 发明授权

US07353687B2 Reference leak 有权
标题翻译：参考泄漏
公开(公告)号：US07353687B2
公开(公告)日：2008-04-08
申请号：US11228821
申请日：2005-09-16
申请人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
发明人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G01F25/00
CPC分类号： G01M3/007
摘要： A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
摘要翻译：参考泄漏包括由金属材料，玻璃材料和陶瓷材料之一形成的泄漏层。金属材料选自铜，镍和钼。泄漏层包括限定在其中的多个基本上平行的泄漏通孔。泄漏孔可以是圆柱形孔或多面孔。每个泄漏通孔的长度优选不小于其直径的20倍。每个泄漏通孔的直径通常在10nm至500nm的范围内。每个泄漏通孔的长度通常在100nm至100μm的范围内。参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。泄漏孔具有基本相同的长度和直径。

15. 发明授权

US07714493B2 Field emission device and field emission display employing the same 有权
标题翻译：场致发射器件和采用其的场致发射显示器
公开(公告)号：US07714493B2
公开(公告)日：2010-05-11
申请号：US11438022
申请日：2006-05-19
申请人： Bing-chu Du , Jie Tang , Cai-lin Guo , Liang Liu , Zhao-fu Hu , Pi-jin Chen , Shou-shan Fan
发明人： Bing-chu Du , Jie Tang , Cai-lin Guo , Liang Liu , Zhao-fu Hu , Pi-jin Chen , Shou-shan Fan
IPC分类号： H01J9/02 , H01J1/02
CPC分类号： H01J3/022 , H01J31/127
摘要： A field emission device (6), in accordance with a preferred embodiment, includes a cathode electrode (61), a gate electrode (64), a separator (62), and a number of emissive units (63) composed of an emissive material. The separator includes an insulating portion (621) and a number of conductive portions (622). The insulating portion of the separator is configured between the cathode electrode and the gate electrode for insulating the cathode electrode from the gate electrode. The emissive units are configured on the separator at positions proximate to two sides of the gate electrode. The emissive units are in connection with the cathode electrode via the conductive portions respectively. The emissive units are distributed on the separator adjacent to two sides of the gate electrode, which promotes an ability of emitting electrons from the emissive material and the emitted electrons to be guided by the gate electrode toward a smaller spot they bombard.
摘要翻译：根据优选实施例的场致发射器件（6）包括阴极电极（61），栅极电极（64），隔膜（62）和由发射材料构成的多个发射单元（63）。分离器包括绝缘部分（621）和多个导电部分（622）。隔板的绝缘部分配置在阴极电极和栅电极之间，用于将阴极电极与栅电极绝缘。发射单元被配置在分离器上靠近栅电极两侧的位置处。发射单元分别经由导电部分与阴极连接。发射单元分布在邻近栅电极的两侧的分离器上，这促进了从发射材料发射电子的能力，并且发射的电子被栅电极引导到他们轰击的较小的位置。

16. 发明申请

US20060103288A1 Field emission cathode and field emission device using the same 有权
标题翻译：场发射阴极和场致发射器件使用相同
公开(公告)号：US20060103288A1
公开(公告)日：2006-05-18
申请号：US11242099
申请日：2005-10-03
申请人： Lei-Mei Sheng , Peng Liu , Yang Wei , Li Quan , Jie Tang , Liang Liu , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
发明人： Lei-Mei Sheng , Peng Liu , Yang Wei , Li Quan , Jie Tang , Liang Liu , Pi-Jin Chen , Zhao-Fu Hu , Shou-Shan Fan
IPC分类号： H01J1/05
CPC分类号： H01J1/3042
摘要： A field emission device (8) includes a cathode (80), an anode (84), and spacers (83) interposed therebetween. The cathode includes a network base (81) and a plurality of field emitters (82) formed thereon. The network base is formed of a plurality of electrically conductive carriers. The field emitters are located on surfaces of the carriers, respectively. The field emitters extend radially outwardly from the corresponding conductive carriers. The plurality of electrically conductive carriers may be made of electrically conductive fibers, for example, metal fibers, carbon fibers, organic fibers or another suitable fibrous material. Carrier portions of the plurality of electrically conductive carriers may be cylindrical, curved/arcuate, or at least approximately curved in shape.
摘要翻译：场致发射器件（8）包括阴极（80），阳极（84）和插入其间的间隔物（83）。阴极包括形成在其上的网络基座（81）和多个场发射器（82）。网络基底由多个导电载体形成。场发射器分别位于载体的表面上。场发射器从相应的导电载体径向向外延伸。多个导电载体可由导电纤维制成，例如金属纤维，碳纤维，有机纤维或其它合适的纤维材料。多个导电载体的载体部分可以是圆柱形，弯曲/弓形或至少近似弯曲的形状。

17. 发明授权

US07745995B2 Flat panel display having non-evaporable getter material 有权
标题翻译：具有非蒸发性吸气材料的平板显示器
公开(公告)号：US07745995B2
公开(公告)日：2010-06-29
申请号：US11432745
申请日：2006-05-10
申请人： Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人： Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： H01J17/24
CPC分类号： H01L23/26 , H01J29/94 , H01J31/127 , H01J61/26 , H01J63/02 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A flat panel display (7) generally includes a front substrate (79) and a rear substrate (70) opposite thereto. The front substrate is formed with an anode (78). The rear substrate is formed with a cathode (71) facing the anode. Several sidewalls (72) are interposed between the front substrate and the rear substrate. A plurality of getter devices (82) are arranged on the front substrate. Thereby, a chamber between the front substrate and the rear substrate is maintained as a low-pressure vacuum. Each of the getter devices includes a base (820), a getter layer (822) comprised of non-evaporable getter material formed thereon, and securing wires (84) arranged on the base.
摘要翻译：平板显示器（7）通常包括与其相对的前基板（79）和后基板（70）。前基板由阳极（78）形成。后基板形成有面向阳极的阴极（71）。几个侧壁（72）插入在前基板和后基板之间。多个吸气装置（82）布置在前基板上。由此，将前基板和后基板之间的室保持为低压真空。每个吸气装置包括基部（820），由其上形成的不可蒸发的吸气剂材料构成的吸气剂层（822）和布置在基座上的固定电线（84）。

18. 发明申请

US20060279197A1 Flat panel display having non-evaporable getter material 有权
标题翻译：具有非蒸发性吸气材料的平板显示器
公开(公告)号：US20060279197A1
公开(公告)日：2006-12-14
申请号：US11432745
申请日：2006-05-10
申请人： Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
发明人： Liang Liu , Jie Tang , Cai-Lin Guo , Bing-Chu Du , Zhao-Fu Hu , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01L23/26 , H01J29/94 , H01J31/127 , H01J61/26 , H01J63/02 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： A flat panel display (7) generally includes a front substrate (79) and a rear substrate (70) opposite thereto. The front substrate is formed with an anode (78). The rear substrate is formed with a cathode (71) facing the anode. Several sidewalls (72) are interposed between the front substrate and the rear substrate. A plurality of getter devices (82) are arranged on the front substrate. Thereby, a chamber between the front substrate and the rear substrate is maintained as a low-pressure vacuum. Each of the getter devices includes a base (820), a getter layer (822) comprised of non-evaporable getter material formed thereon, and securing wires (84) arranged on the base.
摘要翻译：平板显示器（7）通常包括与其相对的前基板（79）和后基板（70）。前基板由阳极（78）形成。后基板形成有面向阳极的阴极（71）。几个侧壁（72）插入在前基板和后基板之间。多个吸气装置（82）布置在前基板上。由此，将前基板和后基板之间的室保持为低压真空。每个吸气装置包括基底（820），由其上形成的不可蒸发的吸气剂材料构成的吸气剂层（822）和布置在基底上的固定电线（84）。

19. 发明申请

US20060144120A1 Reference leak 有权
标题翻译：参考泄漏
公开(公告)号：US20060144120A1
公开(公告)日：2006-07-06
申请号：US11228821
申请日：2005-09-16
申请人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
发明人： Jie Tang , Liang Liu , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shou-Shan Fan
IPC分类号： G01F25/00
CPC分类号： G01M3/007
摘要： A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
摘要翻译：参考泄漏包括由金属材料，玻璃材料和陶瓷材料之一形成的泄漏层。金属材料选自铜，镍和钼。泄漏层包括限定在其中的多个基本上平行的泄漏通孔。泄漏孔可以是圆柱形孔或多面孔。每个泄漏通孔的长度优选不小于其直径的20倍。每个泄漏通孔的直径通常在10nm至500nm的范围内。每个泄漏通孔的长度通常在100nm至100μm的范围内。参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。泄漏孔具有基本相同的长度和直径。

20. 发明申请

US20060143895A1 Process for manufacturing a reference leak 有权
标题翻译：制造参考泄漏的过程
公开(公告)号：US20060143895A1
公开(公告)日：2006-07-06
申请号：US11228967
申请日：2005-09-16
申请人： Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
发明人： Liang Liu , Jie Tang , Peng Liu , Zhao-Fu Hu , Bing-Chu Du , Cai-Lin Guo , Pi-Jin Chen , Shuai-Ping Ge , Shou-Shan Fan
IPC分类号： B21B1/46
CPC分类号： C25D1/08 , B82Y15/00 , B82Y30/00 , C04B35/62231 , C04B35/6224 , C04B35/62272 , C04B35/62286 , C04B2235/3284 , C04B2235/3418 , C04B2235/526 , C04B2235/5264 , C23F4/00 , G01M3/007 , G01M3/207 , Y10T29/4998 , Y10T29/49982
摘要： A method for making a reference leak includes the steps of: (a) preparing a substrate; (b) forming a patterned catalyst layer on the substrate, the patterned catalyst layer comprising one or more catalyst blocks; (c) forming one or more elongate nano-structures extending from the corresponding catalyst blocks by a chemical vapor deposition method; (d) forming a leak layer of one of a metallic material, a glass material, and a ceramic material on the substrate with the one or more elongate nano-structures partly or completely embedded therein; and (e) removing the one or more elongate nano-structures and the substrate to obtain a reference leak with one or more leak holes defined therein.
摘要翻译：用于制造参考泄漏的方法包括以下步骤：（a）制备基底; （b）在所述衬底上形成图案化催化剂层，所述图案化催化剂层包含一个或多个催化剂块; （c）通过化学气相沉积法从相应的催化剂块形成一个或多个细长的纳米结构; （d）在所述基板上形成一个或多个细长纳米结构部分或完全嵌入其中的金属材料，玻璃材料和陶瓷材料之一的泄漏层; 和（e）移除所述一个或多个细长纳米结构和所述基底以获得其中限定有一个或多个泄漏孔的参考泄漏。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式