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11. 发明申请

US20050170668A1 Plasma chemical vapor deposition system and method for coating both sides of substrate 审中-公开
标题翻译：等离子体化学气相沉积系统及其涂覆方法
公开(公告)号：US20050170668A1
公开(公告)日：2005-08-04
申请号：US11044278
申请日：2005-01-28
申请人： Young-soo Park , Yuri Tolmachev
发明人： Young-soo Park , Yuri Tolmachev
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C23C16/507 , H01L21/31 , H01L21/316
CPC分类号： C23C16/4412 , C23C16/455 , C23C16/45502 , C23C16/507 , H01L21/31612
摘要： A plasma chemical vapor deposition system includes a chamber provided with gas injection holes, a gas exhaust unit mounted on the chamber, a substrate holder disposed on a central area of the chamber to support a substrate in a state where both sides of the substrate are exposed, and first and second coils generating induced magnetic fields. The first and second coils are disposed around upper and lower outer circumferences of the chamber, respectively.
摘要翻译：等离子体化学气相沉积系统包括设置有气体注入孔的腔室，安装在腔室上的排气单元，设置在室的中心区域上以在衬底的两侧暴露的状态下支撑衬底的衬底保持器以及产生感应磁场的第一和第二线圈。第一和第二线圈分别设置在腔室的上外周和下外周。

12. 发明授权

US07355357B2 Plasma accelerator 有权
标题翻译：等离子加速器
公开(公告)号：US07355357B2
公开(公告)日：2008-04-08
申请号：US11411966
申请日：2006-04-27
申请人： Won-taek Park , Vasily Pashkovski , Yuri Tolmachev
发明人： Won-taek Park , Vasily Pashkovski , Yuri Tolmachev
IPC分类号： H05H9/00
CPC分类号： F03H1/00 , H01L21/67063 , H05H1/54
摘要： A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral surface of the chamber in opposite directions, and a second coil section comprising a plurality of coils that are wound around the lateral surface of the chamber between coils of the first coil section in opposite directions. Accordingly, it is possible to make the mutual inductance between the coils small, to accurately adjust levels and phase differences of currents to be applied to the coils, and also to simplify the driving circuit.
摘要翻译：提供等离子体加速器。等离子体加速器包括具有闭合顶部，敞开的底部和侧面的腔室，第一线圈段，其包括彼此串联连接的多个线圈，并且沿相反方向缠绕在腔室的侧表面上，以及包括多个线圈的第二线圈段，所述多个线圈在相反方向上缠绕在所述第一线圈段的线圈之间的所述腔室的侧表面上。因此，可以使线圈之间的互感小，以精确地调整施加到线圈的电流的电平和相位差，并且还简化驱动电路。

13. 发明申请

US20050173069A1 Plasma generating apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子体发生装置和等离子体处理装置
公开(公告)号：US20050173069A1
公开(公告)日：2005-08-11
申请号：US10931132
申请日：2004-09-01
申请人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
发明人： Yuri Tolmachev , Dong-joon Ma , Dae-il Kim , Sergiy Navala
IPC分类号： H05H1/46 , C23C16/511 , C23F1/00 , H01J37/32 , H01L21/02 , H05H1/30
CPC分类号： H01J37/32247 , H01J37/32192
摘要： Provided is a microwave plasma generating apparatus using a multiple open-ended cavity resonator, and a plasma processing apparatus including the microwave plasma generating apparatus. The plasma processing apparatus includes a container for forming a process chamber, a support unit that supports a material to be processed in the process chamber, a dielectric window formed on an upper part of the process chamber, a gas supply unit that inject a process gas into the process chamber, and a microwave supply unit that includes a plurality of resonators for supplying microwaves through the dielectric window.
摘要翻译：提供了一种使用多开口腔谐振器的微波等离子体产生装置和包括微波等离子体产生装置的等离子体处理装置。等离子体处理装置包括用于形成处理室的容器，在处理室中支撑待处理材料的支撑单元，形成在处理室的上部的电介质窗口，注入处理气体的气体供给单元以及包括用于通过电介质窗提供微波的多个谐振器的微波提供单元。

14. 发明申请

US20050103623A1 Ionized physical vapor deposition apparatus using helical self-resonant coil 有权
标题翻译：电离物理气相沉积装置采用螺旋自谐振线圈
公开(公告)号：US20050103623A1
公开(公告)日：2005-05-19
申请号：US10932076
申请日：2004-09-02
申请人： Yuri Tolmachev , Dong-joon Ma , Sergiy Navala , Dae-il Kim
发明人： Yuri Tolmachev , Dong-joon Ma , Sergiy Navala , Dae-il Kim
IPC分类号： H01L21/203 , C23C14/35 , C23C14/44 , H01J37/32 , H01J37/34 , C23C14/34
CPC分类号： H01J37/321 , C23C14/358 , H01J37/3408
摘要： Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.1 mtorr, and to produce high density plasma with high efficiency compared to a conventional IPVD apparatus. Accordingly, a high efficiency of ionization of deposition material is achieved.
摘要翻译：提供了一种具有螺旋自谐振线圈的电离物理气相沉积（IPVD）装置。 IPVD装置包括具有支撑待处理基板的基板保持器的处理室，将要沉积在基板上的材料供给到面向基板保持器的处理室中的沉积材料源，注入单元将处理气体进入处理室，向衬底保持器施加偏置电位的偏压电源，产生用于离子化处理室中的沉积材料的等离子体的螺旋自谐振线圈，螺旋自谐振线圈的一端接地并且另一端电气打开，以及RF发生器，用于向螺旋自谐振线圈提供RF功率。螺旋自谐振线圈的使用使得IPVD装置能够在非常低的室压力（例如约0.1mtorr）下点燃和操作，并且与传统的IPVD装置相比，可以高效率地产生高密度等离子体。因此，实现了沉积材料的高效离子化。

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