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11. 发明申请

US20120040520A1 ULTRA-FINE-GRAINED POLYSILICON THIN FILM VAPOUR-DEPOSITION METHOD 审中-公开
标题翻译：超细晶粒多晶硅薄膜蒸发沉积法
公开(公告)号：US20120040520A1
公开(公告)日：2012-02-16
申请号：US13266423
申请日：2010-04-12
申请人： Hai Won Kim , Sang Ho Woo , Sung Gil Cho
发明人： Hai Won Kim , Sang Ho Woo , Sung Gil Cho
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02579 , H01L21/02595 , H01L21/0262
摘要： Provided is a method of depositing an ultra-fine grain polysilicon thin film. The method includes forming a nitrogen atmosphere in a chamber loaded with a substrate, and supplying a source gas into the chamber to deposit a polysilicon thin film on the substrate, in which the source gas includes a silicon-based gas, a nitrogen-based gas, and a phosphorous-based gas. The forming of the nitrogen atmosphere may include supplying a nitrogen-based gas into the chamber.
摘要翻译：提供了沉积超细晶粒多晶硅薄膜的方法。该方法包括在装载有基板的室中形成氮气氛，并将源气体供应到室中以在基板上沉积多晶硅薄膜，其中源气体包括硅基气体，氮气体，和基于磷的气体。氮气氛的形成可以包括将氮基气体供应到室中。

12. 发明授权

US08937012B2 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08937012B2
公开(公告)日：2015-01-20
申请号：US13814533
申请日：2011-08-30
申请人： Hai Won Kim , Sang Ho Woo , Sung Kil Cho , Gil Sun Jang
发明人： Hai Won Kim , Sang Ho Woo , Sung Kil Cho , Gil Sun Jang
IPC分类号： H01L21/44 , H01L21/02 , H01L21/8238 , H01L21/3205 , H01L29/49 , C01B33/06 , H01L27/115 , H01L29/66 , C23C16/02 , C23C16/04 , C23C16/24 , H01L21/28
CPC分类号： H01L21/02697 , C01B33/06 , C23C16/0227 , C23C16/04 , C23C16/24 , H01L21/28273 , H01L21/28282 , H01L21/32051 , H01L21/823835 , H01L27/11521 , H01L27/11568 , H01L29/4975 , H01L29/66825 , H01L29/66833
摘要： Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.
摘要翻译：提供了一种包括金属硅化物层的半导体器件的制造方法。根据本发明的一个实施例，半导体器件的制造方法包括以下步骤：在已经形成多晶硅图案的衬底上形成绝缘层，以使多晶硅图案暴露; 在已经相对于绝缘层选择性地暴露的暴露的多晶硅图案上形成硅籽晶层; 在已经形成有硅籽晶层的基板上形成金属层; 以及通过在其上形成有金属层的基板上进行热处理而形成金属硅化物层。

13. 发明申请

US20110294284A1 METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM 审中-公开
标题翻译：沉积超细晶粒多晶硅薄膜的方法
公开(公告)号：US20110294284A1
公开(公告)日：2011-12-01
申请号：US12990628
申请日：2009-04-29
申请人： Hai Won Kim , Sang Ho Woo , Sung Gil Cho , Song Hwan Park , Kyung Soo Jung
发明人： Hai Won Kim , Sang Ho Woo , Sung Gil Cho , Song Hwan Park , Kyung Soo Jung
IPC分类号： H01L21/383 , H01L21/443
CPC分类号： C23C16/24
摘要： According to the present invention, a method for depositing an ultra-fine crystal particle polysilicon thin film supplies a source gas in a chamber loaded with a substrate to deposit a polysilicon thin film on the substrate, wherein the source gas contains a silicon-based gas, a nitrogen-based gas and a phosphorous-based gas. The mixture ratio of the nitrogen-based gas to the silicon-based gas among the source gas may be 0.03 or lower (but, excluding zero). Nitrogen in the thin film may be 11.3 atomic percent or lower (but, excluding zero).
摘要翻译：根据本发明，用于沉积超细晶粒多晶硅薄膜的方法在负载有衬底的室中提供源气体，以在衬底上沉积多晶硅薄膜，其中源气体包含硅基气体，氮系气体和磷系气体。源气体中的氮系气体与硅系气体的混合比可以为0.03以下（但不包括零）。薄膜中的氮可以为11.3原子％以下（但不包括零）。

14. 发明申请

US20130130497A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的生产方法
公开(公告)号：US20130130497A1
公开(公告)日：2013-05-23
申请号：US13814533
申请日：2011-08-30
申请人： Hai Won Kim , Sang Ho Woo , Sung Kil Cho , Gil Sun Jang
发明人： Hai Won Kim , Sang Ho Woo , Sung Kil Cho , Gil Sun Jang
IPC分类号： H01L21/02
CPC分类号： H01L21/02697 , C01B33/06 , C23C16/0227 , C23C16/04 , C23C16/24 , H01L21/28273 , H01L21/28282 , H01L21/32051 , H01L21/823835 , H01L27/11521 , H01L27/11568 , H01L29/4975 , H01L29/66825 , H01L29/66833
摘要： Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.
摘要翻译：提供了一种包括金属硅化物层的半导体器件的制造方法。根据本发明的一个实施例，半导体器件的制造方法包括以下步骤：在已经形成多晶硅图案的衬底上形成绝缘层，以使多晶硅图案暴露; 在已经相对于绝缘层选择性地暴露的暴露的多晶硅图案上形成硅籽晶层; 在已经形成有硅籽晶层的基板上形成金属层; 以及通过在其上形成有金属层的基板上进行热处理来形成金属硅化物层。

15. 发明申请

US20130130480A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130130480A1
公开(公告)日：2013-05-23
申请号：US13813978
申请日：2011-09-01
申请人： Hai Won Kim , Sang Ho Woo , Sung Kill Cho , Gil Sun Jang
发明人： Hai Won Kim , Sang Ho Woo , Sung Kill Cho , Gil Sun Jang
IPC分类号： H01L21/02
CPC分类号： H01L21/02507 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262
摘要： Disclosed is a method for manufacturing a semiconductor device having a multilayer structure. The method for manufacturing a semiconductor device according to the present invention comprises the loading of a substrate into the chamber of a chemical vapor deposition apparatus and the forming of a multilayer structure in which a plurality of doped amorphous silicon layers and a plurality of insulation layers are alternately stacked. Said layers are stacked by alternately and repetitively forming the doped amorphous silicon layer on the substrate by supplying a conductive dopant and silicon precursor into the chamber where the substrate is loaded, and forming the insulation layer containing silicon on the substrate by introducing the silicon precursor and a reaction gas into the chamber where the substrate is loaded.
摘要翻译：公开了一种具有多层结构的半导体器件的制造方法。根据本发明的制造半导体器件的方法包括将衬底加载到化学气相沉积设备的室中，以及形成多层结构，其中多个掺杂的非晶硅层和多个绝缘层是交替堆叠。通过将衬底上的导电掺杂剂和硅前驱体加载到衬底载体的腔室内，通过交替重复地形成掺杂的非晶硅层，并且通过引入硅前体在衬底上形成含硅的绝缘层来堆叠所述层，将反应气体输入到载置基板的室中。

16. 发明申请

US20130115783A1 METHOD FOR DEPOSITING CYCLIC THIN FILM 有权
标题翻译：沉积环状薄膜的方法
公开(公告)号：US20130115783A1
公开(公告)日：2013-05-09
申请号：US13808926
申请日：2011-08-01
申请人： Hai Won Kim , Sang Ho Woo
发明人： Hai Won Kim , Sang Ho Woo
IPC分类号： H01L21/02
CPC分类号： H01L21/02271 , C23C16/345 , C23C16/401 , C23C16/4554 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/02532 , H01L21/0262
摘要： Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber.
摘要翻译：提供一种沉积能够提供优异的膜性质和阶梯覆盖的环状薄膜的方法。该方法包括以下步骤：通过重复硅沉积步骤形成硅薄膜，用于通过将硅前体注入到其中负载衬底的室中沉积硅，以及用于去除未反应的硅前体的第一吹扫步骤和来自室的反应副产物; 以及通过在所述室中形成等离子体气氛，从所述硅薄膜形成包括硅的绝缘膜。

17. 发明申请

US20110111582A1 METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM 审中-公开
标题翻译：沉积超细晶粒多晶硅薄膜的方法
公开(公告)号：US20110111582A1
公开(公告)日：2011-05-12
申请号：US12990629
申请日：2009-04-29
申请人： Hai Won Kim , Sang Ho Woo , Sung Gil Cho , Song Hwan , Kyung Soo Jung
发明人： Hai Won Kim , Sang Ho Woo , Sung Gil Cho , Song Hwan , Kyung Soo Jung
IPC分类号： H01L21/285
CPC分类号： C23C16/24 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/28556 , H01L21/32055
摘要： Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic % (atomic percentage) or less (excluding 0).
摘要翻译：公开了一种用超细晶粒沉积多晶硅薄膜的方法。根据本发明，通过在其中装载基板的室内供给源气体将多晶硅薄膜沉积在基板上，其中源气体包括硅基气体和氧基气体。氧基气体与硅系气体的混合比可以为0.15以下（不包括0）。薄膜内的氧可以为20原子％（原子百分比）以下（不包括0）。

18. 发明申请

US20070264770A1 CAPACITOR FORMING METHOD 审中-公开
标题翻译：电容成型方法
公开(公告)号：US20070264770A1
公开(公告)日：2007-11-15
申请号：US11618796
申请日：2006-12-30
申请人： Keum Bum Lee , Hai Won Kim , Ho Jin Cho , Jun Soo Chang , Eun A. Lee , Dong Su Park
发明人： Keum Bum Lee , Hai Won Kim , Ho Jin Cho , Jun Soo Chang , Eun A. Lee , Dong Su Park
IPC分类号： H01L21/8242 , H01L29/92
CPC分类号： H01L21/3141 , H01L21/02178 , H01L21/02189 , H01L21/022 , H01L21/0228 , H01L21/0234 , H01L27/10852 , H01L28/91
摘要： A method for forming a capacitor includes forming a concave mold over a semiconductor substrate. A storage node is formed on the concave mold. A dielectric layer including a zirconium oxide (ZrO2) layer is deposited over the storage node at a first temperature. A radical pile-up treatment on the dielectric layer is performed in an atmosphere including radicals at a second temperature higher than the first temperature to induce crystallization of the dielectric layer. A plate node is formed over the dielectric layer.
摘要翻译：形成电容器的方法包括在半导体衬底上形成凹模。存储节点形成在凹模上。包含氧化锆（ZrO 2）层的电介质层在第一温度下沉积在存储节点上。在包括自由基的气氛中，在高于第一温度的第二温度下进行介电层上的自由基堆积处理，以诱导电介质层的结晶。在该电介质层上形成一个平板节点。

19. 发明授权

US06784068B2 Capacitor fabrication method 有权
标题翻译：电容器制造方法
公开(公告)号：US06784068B2
公开(公告)日：2004-08-31
申请号：US10634550
申请日：2003-08-05
申请人： Kee Jeung Lee , Hai Won Kim
发明人： Kee Jeung Lee , Hai Won Kim
IPC分类号： H01L2120
CPC分类号： H01L27/10852 , H01L21/31116 , H01L27/10817 , H01L28/84 , H01L28/90
摘要： A capacitor is fabricated over a first layer having a first conductive plug formed on a substrate in a semiconductor memory. On the first layer, a silicon nitride film, a first capacitor oxide film, and a second oxide film are sequentially formed. The first and the second oxide films have different wet etch rates. Dry and wet etchings are sequentially performed to the first and second oxide films to form a second contact hole. The second contact hole is then etched. Thereafter, a silicon film and a filler film are sequentially formed on the resultant surface of the structure. A cylindrical storage node electrode is then formed by etching a predetermined portion of the filler film and the silicon film. After removing the remaining filler film and the oxide films, a Ta2O5 dielectric film covering the storage node electrode and a TiN film for an upper electrode are then sequentially formed.
摘要翻译：在半导体存储器中的在衬底上形成的第一导电插塞的第一层上制造电容器。在第一层上，依次形成氮化硅膜，第一电容器氧化膜和第二氧化物膜。第一和第二氧化膜具有不同的湿蚀刻速率。依次对第一和第二氧化物膜进行干蚀刻和湿蚀刻以形成第二接触孔。然后蚀刻第二接触孔。此后，在结构的所得表面上依次形成硅膜和填充膜。然后通过蚀刻填充膜和硅膜的预定部分来形成圆柱形存储节点电极。在除去剩余的填充膜和氧化物膜之后，依次形成覆盖存储节点电极的Ta 2 O 5电介质膜和用于上部电极的TiN膜。

20. 发明申请

US20140174356A1 SUBSTRATE SUPPORTING UNIT AND SUBSTRATE PROCESSING APPARATUS MANUFACTURING METHOD OF THE SUBSTRATE SUPPORTING UNIT 有权
标题翻译：基板支撑单元和基板处理装置基板支撑单元的制造方法
公开(公告)号：US20140174356A1
公开(公告)日：2014-06-26
申请号：US14234723
申请日：2012-08-24
申请人： Hai Won Kim , Sung-Kil Cho
发明人： Hai Won Kim , Sung-Kil Cho
IPC分类号： H01L21/683
CPC分类号： H01L21/683 , C23C16/4585 , H01L21/67109 , H01L21/68735 , Y10T29/49764
摘要： Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.
摘要翻译：提供了基板支撑单元和基板处理装置，以及制造基板支撑单元的方法。基板支撑单元包括：基座，其基板被放置在基座的顶面上;一个或多个吸热构件，能够在吸收构件设置在基座的上部的安装位置之间转换; 使所述基座热接触，并且所述吸热构件与所述基座的上部分离的释放位置，所述一个或多个吸收构件在所述安装位置吸收所述基座的热量，并且具有多个固定槽，其中吸热构件被选择性地插入和固定。

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