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11. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

12. 发明授权

US08319225B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08319225B2
公开(公告)日：2012-11-27
申请号：US12611951
申请日：2009-11-04
申请人： Takahiro Kamo , Takeshi Noda
发明人： Takahiro Kamo , Takeshi Noda
IPC分类号： H01L33/00
CPC分类号： H01L27/1214 , H01L29/66765 , H01L29/78621 , H01L29/78627 , H01L29/78678 , H01L29/78696
摘要： A display device includes: a conductive layer on which gate electrodes are formed; a first insulation layer which is formed on the conductive layer; a semiconductor layer which is formed on the first insulation layer and is provided for forming semiconductor films which contain poly-crystalline silicon above the gate electrodes; and a second insulation layer which is formed on the semiconductor layer. Here, the semiconductor film includes a channel region which overlaps with the gate electrode as viewed in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.
摘要翻译：显示装置包括：形成栅电极的导电层; 形成在导电层上的第一绝缘层; 半导体层，形成在第一绝缘层上，用于形成在栅电极上方含有多晶硅的半导体膜; 以及形成在所述半导体层上的第二绝缘层。这里，半导体膜包括与平面图中的栅电极重叠的沟道区域。在沟道区域中，与第二绝缘层接触的半导体膜的一部分比与第一绝缘层接触的半导体膜的部分显示更高的杂质浓度。

13. 发明申请

US20100226813A1 HIGH TENSILE STRENGTH STEEL AND MARINE STRUCTURE HAVING EXCELLENT WELD TOUGHNESS 审中-公开
标题翻译：具有优异焊接韧性的高强度钢和海洋结构
公开(公告)号：US20100226813A1
公开(公告)日：2010-09-09
申请号：US12557892
申请日：2009-09-11
申请人： Takahiro Kamo , Takeshi Urabe , Hirofumi Nakamura , Kazushi Ohnishi , Masahiko Hamada
发明人： Takahiro Kamo , Takeshi Urabe , Hirofumi Nakamura , Kazushi Ohnishi , Masahiko Hamada
IPC分类号： C22C38/42 , C22C38/16 , C22C38/08 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/14 , C22C38/20
CPC分类号： C22C38/42 , C22C38/02 , C22C38/44 , C22C38/48
摘要： In order to provide a high tensile strength steel having excellent low temperature toughness and which can withstand large heat input welding, a steel comprises, in mass percent, C: 0.01-0.10%, Si: at most 0.5%, Mn: 0.8-1.8%, P: at most 0.020%, S: at most 0.01%, Cu: 0.8-1.5%, Ni: 0.2-1.5%, Al: 0.001-0.05%, N: 0.0030-0.0080%, O: 0.0005-0.0035%, if necessary at least one of Ti: 0.005-0.03%, Nb: 0.003-0.03%, and Mo: 0.1-0.8%, and a remainder of Fe and impurities, and the N/Al ratio is 0.3-3.0.
摘要翻译：为了提供具有优异的低温韧性并且能够承受大的热输入焊接的高抗拉强度钢，以质量％计含有C：0.01-0.10％，Si：至多0.5％，Mn：0.8-1.8 ％，P：0.020％以下，S：0.01％以下，Cu：0.8〜1.5％，Ni：0.2〜1.5％，Al：0.001-0.05％，N：0.0030-0.0080％，O：0.0005〜0.0035％如果需要，Ti：0.005-0.03％，Nb：0.003-0.03％，Mo：0.1-0.8％中的至少一种，剩余的Fe和杂质，N / Al比为0.3-3.0。

14. 发明授权

US07619251B2 Laser crystallization method suppressing propagation of cracks forming a display device 有权
标题翻译：抑制形成显示装置的裂纹扩散的激光结晶化方法
公开(公告)号：US07619251B2
公开(公告)日：2009-11-17
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L29/04 , H01L31/036 , H01L21/84 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
摘要翻译：用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

15. 发明申请

US20060270130A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060270130A1
公开(公告)日：2006-11-30
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L21/84 , H01L29/76
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.
摘要翻译：在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。用CW激光束照射除基板切断位置CUT附近的基板GLS。衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

16. 发明申请

US20050266594A1 Manufacturing method for display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20050266594A1
公开(公告)日：2005-12-01
申请号：US11138471
申请日：2005-05-27
申请人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Hidekazu Miyake , Toshihiko Itoga
IPC分类号： G02F1/1368 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L51/50 , H05B33/14
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1229 , H01L27/1285
摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.
摘要翻译：一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中，在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

17. 发明授权

US07811910B2 Manufacturing method of display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07811910B2
公开(公告)日：2010-10-12
申请号：US12043159
申请日：2008-03-06
申请人： Mikio Hongo , Akio Yazaki , Takahiro Kamo
发明人： Mikio Hongo , Akio Yazaki , Takahiro Kamo
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , H01L21/02675 , H01L27/1285
摘要： In crystallization of a silicon film by annealing using a linear-shaped laser beam having a width of the short axis of the beam is ununiform, the profile (intensity distribution) of the laser beam is evaluated and the results are fed back to a condition of oscillating the laser beam or an optical condition for projecting the laser beam onto the silicon film, whereby a display device comprising a high-quality crystalline silicon film is manufactured. The energy distribution of the linear-shaped laser beam is determined by a detector type CCD camera which is moved stepwise in the directions in which its long axis and short axis extend, respectively, and a value obtained by dividing an accumulated intensity E in the long axis direction obtained by accumulating the detected signal in the direction parallel to the short axis by the square root of the width W of the short axis of the above linear-shaped laser beam in each position of the long axis: E/√{square root over ( )}(W), is determined in all the positions of a cross section of the linear-shaped laser beam to evaluate the above intensity distribution.
摘要翻译：在通过使用具有波束的短轴宽度的线形激光束进行退火的硅膜的结晶化不均匀的情况下，评价激光束的轮廓（强度分布），并将结果反馈到振荡激光束或将激光束投射到硅膜上的光学条件，由此制造包括高质量结晶硅膜的显示装置。线状激光束的能量分布由分别在其长轴和短轴延伸的方向上逐步移动的检测器型CCD照相机确定，并且通过将长时间的累积强度E除以获得的值将上述线状激光的短轴的宽度W的平方根在长轴的各位置上沿着与短轴平行的方向累积检测信号而得到的轴方向：E /√{平方根在线形激光束的横截面的所有位置中确定over（）}（W），以评估上述强度分布。

18. 发明申请

US20100230675A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20100230675A1
公开(公告)日：2010-09-16
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L33/16 , H01L33/02
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译：提供了具有优异的光电转换效率的光传感器的显示装置。在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。

19. 发明申请

US20090230397A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090230397A1
公开(公告)日：2009-09-17
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

20. 发明申请

US20080296583A1 Display Device And Manufacturing Method of The Same 审中-公开
标题翻译：显示器件及其制造方法
公开(公告)号：US20080296583A1
公开(公告)日：2008-12-04
申请号：US12185292
申请日：2008-08-04
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L33/00
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.
摘要翻译：显示装置包括电容元件，其被配置为使得导电的半导体层的一部分构成一个电极，覆盖半导体层的绝缘膜构成电介质膜，以及导电层，其包括形成在该电极上的部分绝缘膜与一个电极重叠构成另一个电极。导电层具有从形成有半导体层的区域的内部延伸到形成有半导体层的区域的外侧的延伸部，并形成在绝缘膜的上方。绝缘膜在绝缘膜与导电层的半导体层和延伸部分重叠的区域中具有比在与一个电极重叠的部分处的膜厚度大的膜厚度。

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