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11. 发明授权

US08282727B2 Water-borne primer coating composition and method of forming coating film 有权
标题翻译：水性底漆涂料组合物及其形成方法
公开(公告)号：US08282727B2
公开(公告)日：2012-10-09
申请号：US11830462
申请日：2007-07-30
申请人： Takeshi Ogawa , Takanori Hashimoto , Emi Nomi , Yutaro Kawasaki , Yoshihiko Saito
发明人： Takeshi Ogawa , Takanori Hashimoto , Emi Nomi , Yutaro Kawasaki , Yoshihiko Saito
IPC分类号： B05D7/14
CPC分类号： C09D5/002 , C08F255/02 , C08L23/025 , C08L51/06 , C08L63/00 , C08L75/04 , C09D133/06 , C08L2666/02 , C08L2666/04 , C08L2666/14
摘要： A water-borne primer coating composition including a water-borne non-chlorinated polyolefin resin (A), a water-borne polyurethane resin (B), a water-borne epoxy resin (C) and an internally crosslinked acrylic particle emulsion (D), wherein the content of resin (A) is 15 to 60%, the content of resin (B) is 10 to 50%, the content of resin (C) is 20 to 50%, and the content of emulsion (D) is 5 to 20%, all by weight on the solid equivalent basis in 100% by weight of the total amount of resin (A), resin (B), resin (C) and emulsion (D), and resin (A) is a polypropylene resin having crystallinity of 35 to 55% and a weight average molecular weight of 50000 to 200000. The composition can achieve an adhesion property to a substrate, gasohol resistance, inhibition of peeling of a multilayer coating film in washing by high pressure cleaning and moisture resistance.
摘要翻译：包含水性非氯化聚烯烃树脂（A），水性聚氨酯树脂（B），水性环氧树脂（C）和内部交联的丙烯酸类颗粒乳液（D）的水性底漆涂料组合物，，其中树脂（A）的含量为15〜60％，树脂（B）的含量为10〜50％，树脂（C）的含量为20〜50％，乳液（D）的含量为 5重量％至20重量％，以树脂（A），树脂（B），树脂（C）和乳液（D）的总量为100重量％的固体当量计，树脂（A）为结晶度为35〜55％，重均分子量为50000〜200000的聚丙烯树脂。该组合物可以实现对基材的粘合性，耐醇油性，通过高压清洗和湿气抑制洗涤中多层涂膜的剥离抵抗性。

12. 发明申请

US20070243701A1 Semiconductor device fabrication method using ultra-rapid thermal annealing 审中-公开
标题翻译：半导体器件制造方法采用超快速热退火
公开(公告)号：US20070243701A1
公开(公告)日：2007-10-18
申请号：US11783035
申请日：2007-04-05
申请人： Takayuki Ito , Kyoichi Suguro , Takaharu Itani , Yoshihiko Saito
发明人： Takayuki Ito , Kyoichi Suguro , Takaharu Itani , Yoshihiko Saito
IPC分类号： H01L21/425
CPC分类号： H01L21/2686 , H01L21/324 , H01L29/7833 , H01L29/7842
摘要： An impurity is ion-implanted into the major surface of an Si substrate having a bulk microdefect density of 5×106 to 5×107 cm−3, a bulk microdefect size smaller than 100 nm, and a dissolved oxygen concentration of 1.1×1018 to 1.2×1018 cm−3. The Si substrate then undergoes ultra-rapid thermal annealing whose heating/cooling rate is higher than 1×105° C./sec, thereby electrically activating the impurity to form at least a partial impurity diffusion layer of a semiconductor element.
摘要翻译：将杂质离子注入到具有体积微密度为5×10 -6至5×10 -7 cm -3以下的Si衬底的主表面中，体积微观尺寸小于100nm，溶解氧浓度为1.1×10 18至1.2×10 -8 cm -3。然后，Si衬底经历其加热/冷却速率高于1×10 5℃/秒的超快速热退火，从而电激活杂质以形成半导体的至少部分杂质扩散层元件。

13. 发明授权

US07224022B2 Vertical type semiconductor device and method of manufacturing the same 失效
标题翻译：垂直型半导体器件及其制造方法
公开(公告)号：US07224022B2
公开(公告)日：2007-05-29
申请号：US10804018
申请日：2004-03-19
申请人： Keinichi Tokano , Yoshihiko Saito , Shigeo Kouzuki , Yasunori Usui , Masaru Izumisawa , Takahiro Kawano
发明人： Keinichi Tokano , Yoshihiko Saito , Shigeo Kouzuki , Yasunori Usui , Masaru Izumisawa , Takahiro Kawano
IPC分类号： H01L29/00
CPC分类号： H01L29/7811 , H01L21/26586 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/407 , H01L29/66712 , H01L29/7802
摘要： As and B are implanted to side surfaces of trenches 3 by a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n−-type epitaxial Si layer is interposed between trenches 3 is converted into a semiconductor structure consisting of n-type pillar layer 5/p-type pillar layer 4/n-type pillar layer 5 lining up. The structure can function substantially the same role as that of a super junction structure.
摘要翻译：通过旋转离子注入法将As和B注入到沟槽3的侧表面，通过使用扩散系数中的这些杂质之间的差异，其中n + O - 型外延Si层的结构为插入在沟槽3之间的半导体结构被转换为由n型支柱层5 / p型支柱层4 / n型支柱层5组成的半导体结构。该结构可以起到与超级结结构基本上相同的作用。

14. 发明申请

US20060145230A1 Power semiconductor switching element 有权
公开(公告)号：US20060145230A1
公开(公告)日：2006-07-06
申请号：US11293301
申请日：2005-12-05
申请人： Ichiro Omura , Wataru Saito , Tsuneo Ogura , Hiromichi Ohashi , Yoshihiko Saito , Kenichi Tokano
发明人： Ichiro Omura , Wataru Saito , Tsuneo Ogura , Hiromichi Ohashi , Yoshihiko Saito , Kenichi Tokano
IPC分类号： H01L29/94
CPC分类号： H01L29/7802 , H01L21/26586 , H01L29/0619 , H01L29/0634 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/407 , H01L29/408 , H01L29/41741 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/66734 , H01L29/7397 , H01L29/7722 , H01L29/7811 , H01L29/7813 , H01L29/872 , H01L29/8725
摘要： A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.

15. 发明申请

US20050202266A1 Laminate film 有权
标题翻译：层压膜
公开(公告)号：US20050202266A1
公开(公告)日：2005-09-15
申请号：US11074702
申请日：2005-03-09
申请人： Takakazu Hase , Yoshihiko Saito , Koichi Takahashi , Yasushi Kojima , Kenichi Shinya , Keishi Hamada
发明人： Takakazu Hase , Yoshihiko Saito , Koichi Takahashi , Yasushi Kojima , Kenichi Shinya , Keishi Hamada
IPC分类号： B05D7/02 , B32B27/00 , B32B27/06 , B32B27/30 , B32B27/40 , C08J7/04
CPC分类号： C09D133/14 , C08J7/042 , C08J2433/14 , Y10T428/31551 , Y10T428/31554 , Y10T428/31573 , Y10T428/31855 , Y10T428/31909
摘要： A laminate film has a clear layer (B) comprising an acrylic-based polymer (B1) having at least one longer unsaturated double bond group and at least one shorter unsaturated double bond group as side chains, and having a weight-average molecular weight not less than 50,000 but not more than 500,000, the longer unsaturated double bond group introduced in the acrylic-based polymer (B1) by a long-chain unsaturated carboxylic acid having a molecular weight of 150 or more, and the shorter unsaturated double bond group introduced in the acrylic-based polymer (B1) by a short-chain unsaturated carboxylic acid having a molecular weight of less than 150. Compared with laminate films prepared by spray coating, dip coating, or other coating methods, this laminate film is excellent in processability, coating film properties, and ornamental properties. Thus, an article can be excellently decorated with the laminate film provided by the present invention.
摘要翻译：层压膜具有透明层（B），其包含具有至少一个较长不饱和双键基团和至少一个较短不饱和双键基团作为侧链的丙烯酸类聚合物（B1），并且具有重均分子量小于50,000但不超过500,000，通过分子量为150以上的长链不饱和羧酸引入丙烯酸类聚合物（B1）中较长的不饱和双键基团，并引入较短的不饱和双键基团在丙烯酸类聚合物（B1）中，通过分子量小于150的短链不饱和羧酸。与通过喷涂，浸涂或其它涂布方法制备的层压膜相比，该层压膜具有优异的加工性，涂膜性质和装饰性。因此，用本发明提供的层压膜可以很好地装饰物品。

16. 发明授权

US5149403A Fluorine-containing cation exchange membrane for electrolysis and process for producing alkali metal hydroxide by using the same 失效
标题翻译：用于生产碱金属氢氧化物的电解质和方法的含氟化合物交换膜
公开(公告)号：US5149403A
公开(公告)日：1992-09-22
申请号：US629643
申请日：1990-12-07
申请人： Tetsuji Shimohira , Yoshiaki Higuchi , Yoshihiko Saito , Kohji Suzuki
发明人： Tetsuji Shimohira , Yoshiaki Higuchi , Yoshihiko Saito , Kohji Suzuki
IPC分类号： C25B13/08 , C08J5/22
CPC分类号： C08J5/2281 , C08J2327/12
摘要： A fluorine-containing cation exchange membrane for electrolysis, which comprises a multi-layered structure prepared by integrally laminating (i) the first ion exchange layer having --COOM groups (M is hydrogen or an alkali metal) in an ion exchange capacity of from 0.6 to 2.0 meq/g dry resin and having a thickness of from 5 to 300 .mu.m, (ii) the second ion exchange layer present on the anode side of the first ion exchange layer, the second ion exchange layer having a smaller specific resistance and a larger thickness than the first ion exchange layer, and (iii) a hydrophilic asymmetric porous layer present on the cathode side of the first ion exchange layer, the porous layer having a water-permeability which becomes smaller in proportion as closer to the cathode side, and a process for producing an alkali metal hydroxide by using the above fluorine-containing cation exchange membrane.

17. 发明授权

US4744869A Process for purifying methanol 失效
标题翻译：甲醇净化方法
公开(公告)号：US4744869A
公开(公告)日：1988-05-17
申请号：US897371
申请日：1986-08-18
申请人： Yoshihiko Saito , Osamu Hashimoto
发明人： Yoshihiko Saito , Osamu Hashimoto
IPC分类号： B01D3/14 , C07C27/00 , C07C29/80 , C07C31/04 , C07C67/00 , B01D3/34
CPC分类号： C07C29/80 , B01D3/143 , Y02P20/124 , Y10S203/14 , Y10S203/20 , Y10S203/24
摘要： A process for purifying methanol which comprises introducing crude synthetic methanol obtained by catalytic reaction of carbon oxide and hydrogen into a rectifying column either as such or after it is first introduced into a topping column and distilled with or without the addition of water to remove low-boiling components from the top of the topping column, and distilling it in the rectifying column to withdraw purified methanol from the top of the column and mainly water from the bottom of the column; wherein an auxiliary distillation column is provided side by side with the rectifying column, and the rectifying column and the auxiliary distillation column are operated under particular conditions.
摘要翻译：一种净化甲醇的方法，其包括将通过碳氧化物和氢气的催化反应获得的粗合成甲醇引入精馏塔中，或者首先将其引入顶部塔中，或者在加入或不加入水的情况下蒸馏，从顶部塔顶部煮沸成分，并将其蒸馏在精馏塔中，从塔顶取出纯化甲醇，主要从塔底取出水; 其中与精馏塔并排设置辅助蒸馏塔，精馏塔和辅助蒸馏塔在特定条件下操作。

18. 发明授权

US4486277A Electrolytic cation exchange membrane 失效
标题翻译：电解阳离子交换膜
公开(公告)号：US4486277A
公开(公告)日：1984-12-04
申请号：US493574
申请日：1983-05-11
申请人： Haruhisa Miyake , Manabu Suhara , Hiroshi Mori , Yoshihiko Saito
发明人： Haruhisa Miyake , Manabu Suhara , Hiroshi Mori , Yoshihiko Saito
IPC分类号： C25B13/08 , C08J5/22 , C25B1/14 , C25B13/00
CPC分类号： C08J5/2281 , C08J2327/18
摘要： An electrolytic cation exchange membrane comprises a first film made of a fluorinated polymer having cation exchange groups and a second film laminated thereon, made of a fluorinated polymer having carboxylic acid groups as its ion exchange groups and containing the following repeating units (A), (B) and (C) and having a smaller thickness and greater specific electric resistance than the first film; ##STR1## where each of X and X' is --F, --Cl or --CF.sub.3, R.sub.f is a perfluoroalkyl group having from 1 to 10 carbon atoms, M is hydrogen or an alkali metal and Y is selected from the group consisting of --CF.sub.2).sub.x, --O--CF.sub.2).sub.x, ##STR2## where each of x and y is an integer of from 0 to 10 and Z is --F or R.sub.f as defined above, provided that B/A+B+C (molar ratio) and C/A+B+C (molar ratio) are from 0.01 to 0.3 and from 0.05 to 0.5, respectively.
摘要翻译：电解阳离子交换膜包括由具有阳离子交换基团的氟化聚合物制成的第一膜和层压在其上的第二膜，由具有羧酸基的氟化聚合物作为其离子交换基团并含有以下重复单元（A），（ B）和（C），并且具有比第一膜更小的厚度和更大的比电阻; （C）其中X和X'各自为-F，-Cl或-CF 3，R f为具有1至10个碳原子的全氟烷基，M（C 1 -C 6）是氢或碱金属，Y选自-CF 2）x，-O-CF 2）x，其中x和y各自为0至10的整数，Z为-F或只要B / A + B + C（摩尔比）和C / A + B + C（摩尔比）分别为0.01至0.3和0.05至0.5，则定义如上。

19. 发明授权

US08637915B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08637915B2
公开(公告)日：2014-01-28
申请号：US13007258
申请日：2011-01-14
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

20. 发明授权

US08324679B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US08324679B2
公开(公告)日：2012-12-04
申请号：US13430153
申请日：2012-03-26
申请人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
发明人： Masayuki Ichige , Fumitaka Arai , Riichiro Shirota , Toshitake Yaegashi , Yoshio Ozawa , Akihito Yamamoto , Ichiro Mizushima , Yoshihiko Saito
IPC分类号： H01L29/788
CPC分类号： H01L29/42336 , H01L21/28273 , H01L27/0207 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42324 , H01L29/7881
摘要： A nonvolatile semiconductor memory includes first and second memory cells having a floating gate and a control gate. The floating gate of the first and second memory cells is comprised a first part, and a second part arranged on the first part, and a width of the second part in an extending direction of the control gate is narrower than that of the first part. A first space between the first parts of the first and second memory cells is filled with one kind of an insulator. The control gate is arranged at a second space between the second parts of the first and second memory cells.
摘要翻译：非易失性半导体存储器包括具有浮动栅极和控制栅极的第一和第二存储单元。第一和第二存储单元的浮动栅极包括第一部分和布置在第一部分上的第二部分，并且第二部分在控制栅极的延伸方向上的宽度比第一部分的宽度窄。第一和第二存储单元的第一部分之间的第一空间填充有一种绝缘体。控制栅极被布置在第一和第二存储单元的第二部分之间的第二空间处。

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