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11. 发明申请

US20050156150A1 Phase change memory and phase change recording medium 失效
标题翻译：相变存储器和相变记录介质
公开(公告)号：US20050156150A1
公开(公告)日：2005-07-21
申请号：US10975522
申请日：2004-10-29
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
IPC分类号： B41M5/26 , G11B7/24 , G11B7/241 , G11B7/243 , G11B7/252 , G11B7/254 , G11B7/257 , H01L27/24 , H01L29/02 , H01L45/00
CPC分类号： G11B7/2403 , G11B7/00454 , G11B7/243 , G11B7/252 , G11B7/257 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.
摘要翻译：相变存储器包括：基板; 形成在所述基板的主表面上的绝缘膜; 沉积在绝缘膜上的第一电极; 沉积在第一电极上的相变记录膜; 以及沉积在相变记录膜上的第二电极。相变记录膜包含Ge，Sb和Te中的至少两个作为其主要构成元素。第一电极包括Ti，Si和N组的材料，或Ta，Si和N组作为其主要构成材料。

12. 发明申请

US20050024811A1 Semiconductor device with adhesion-improvement capacitor and process for producing the device 失效
标题翻译：具有粘附改善电容器的半导体器件及其制造方法
公开(公告)号：US20050024811A1
公开(公告)日：2005-02-03
申请号：US10923002
申请日：2004-08-23
申请人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
发明人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
IPC分类号： H01L27/10 , H01L21/02 , H01L21/8242 , H01L27/108 , H01G4/008
CPC分类号： H01L28/60 , H01L27/10814 , H01L28/55
摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.
摘要翻译：一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

13. 发明授权

US06489648B2 Semiconductor device 有权
公开(公告)号：US06489648B2
公开(公告)日：2002-12-03
申请号：US09944485
申请日：2001-08-30
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L27108
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31641 , H01L21/31645 , H01L27/10873 , H01L28/56 , H01L28/57 , H01L29/4975 , H01L29/513
摘要： A semiconductor device has a gate dielectric film formed of zirconium oxide or hafnium oxide as a chief material and a gate electrode film in contact with the gate dielectric film on one principal surface side of a silicon substrate. The gate dielectric film contains an addition element to prevent diffusion of oxygen.

14. 发明授权

US07241685B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07241685B2
公开(公告)日：2007-07-10
申请号：US10390413
申请日：2003-03-18
申请人： Hiroshi Moriya , Tomio Iwasaki , Hideo Miura , Shinji Nishihara , Masashi Sahara
发明人： Hiroshi Moriya , Tomio Iwasaki , Hideo Miura , Shinji Nishihara , Masashi Sahara
IPC分类号： H01L21/44
CPC分类号： H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.
摘要翻译：提供一种具有降低短路可能性的布线结构的半导体器件及其制造方法。此外，提供了具有高可靠性的半导体器件。此外，提供了一种具有高产率的半导体器件。在半导体衬底的一个主表面侧形成布线，并且具有相邻导体层和主布线层的叠层结构。主配线层包含一个添加的元素以防止迁移。相邻的导体层由用于防止主要构成元素和主配线层的添加元素扩散到相邻导体层下方的基板中的材料形成，并且添加元素在靠近界面处的位置的浓度与相邻的导体层间隔开的主配线层的添加元素的浓度相比，相邻的导体层和主布线层的电位低。

15. 发明授权

US07217971B2 Miniaturized semiconductor device with improved dielectric properties 有权
标题翻译：具有改善介电特性的小型半导体器件
公开(公告)号：US07217971B2
公开(公告)日：2007-05-15
申请号：US10848473
申请日：2004-05-17
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L31/119
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2–5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2–5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,9，以便成为MOS晶体管。氧化锆或氧化铪被用作栅介质膜6,7的主要成分。栅介质膜6,7例如通过CVD形成。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气扩散被控制。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

16. 发明授权

US06781172B2 Semiconductor device with adhesion-improvement capacitor and process for producing the device 失效
标题翻译：具有粘附改善电容器的半导体器件及其制造方法
公开(公告)号：US06781172B2
公开(公告)日：2004-08-24
申请号：US09800493
申请日：2001-03-08
申请人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
发明人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
IPC分类号： H01L2976
CPC分类号： H01L28/60 , H01L27/10814 , H01L28/55
摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.
摘要翻译：一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

17. 发明授权

US07507985B2 Phase change memory and phase change recording medium 有权
标题翻译：相变存储器和相变记录介质
公开(公告)号：US07507985B2
公开(公告)日：2009-03-24
申请号：US11514272
申请日：2006-09-01
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
IPC分类号： H01L47/00
CPC分类号： G11B7/2403 , G11B7/00454 , G11B7/243 , G11B7/252 , G11B7/257 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.
摘要翻译：相变存储器包括：基板; 形成在所述基板的主表面上的绝缘膜; 沉积在绝缘膜上的第一电极; 沉积在第一电极上的相变记录膜; 以及沉积在相变记录膜上的第二电极。相变记录膜包含Ge，Sb和Te中的至少两个作为其主要构成元素。第一电极包括Ti，Si和N组的材料，或Ta，Si和N组作为其主要构成材料。

18. 发明申请

US20060289850A1 Phase change memory and phase change recording medium 有权
公开(公告)号：US20060289850A1
公开(公告)日：2006-12-28
申请号：US11514272
申请日：2006-09-01
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
IPC分类号： H01L29/04
CPC分类号： G11B7/2403 , G11B7/00454 , G11B7/243 , G11B7/252 , G11B7/257 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.

19. 发明授权

US07135732B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07135732B2
公开(公告)日：2006-11-14
申请号：US10479703
申请日：2002-06-04
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L27/108
CPC分类号： H01L29/517 , H01L21/28185 , H01L21/28194 , H01L21/31604 , H01L27/10814 , H01L28/40 , H01L28/60 , H01L29/513
摘要： In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.
摘要翻译：为了提供具有高可靠性的半导体器件，使用第一电容器电极，形成为与第一电容器电极接触并主要由氧化钛构成的电容器绝缘膜，以及形成为与电容器接触的第二电容器电极并且使用主要由氧化钌或氧化铱构成的导电氧化物膜用于第一电容器电极和第二电容器电极。或者，使用具有抑制漏电流的钛硅酸盐膜和氧化钛的栅极绝缘膜。

20. 发明授权

US07126149B2 Phase change memory and phase change recording medium 失效
公开(公告)号：US07126149B2
公开(公告)日：2006-10-24
申请号：US10975522
申请日：2004-10-29
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideyuki Matsuoka , Norikatsu Takaura
IPC分类号： H01L47/00 , H01L29/04
CPC分类号： G11B7/2403 , G11B7/00454 , G11B7/243 , G11B7/252 , G11B7/257 , G11C13/0004 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144
摘要： A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.

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