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11. 发明授权

US5837565A Semiconductor device 失效
公开(公告)号：US5837565A
公开(公告)日：1998-11-17
申请号：US450621
申请日：1995-05-25
申请人： Takao Kuroda , Yasuhiro Shiraki
发明人： Takao Kuroda , Yasuhiro Shiraki
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/201 , H01L29/205 , H01L29/778 , H01L29/80
CPC分类号： H01L29/205 , H01L29/7783 , Y10S438/938
摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

12. 发明授权

US5491709A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5491709A
公开(公告)日：1996-02-13
申请号：US106700
申请日：1993-08-16
申请人： Yasuji Seko , Hiromi Otoma , Nobuaki Ueki , Hideki Fukunaga , Hideo Nakayama , Kiichi Ueyanagi , Yasuhiro Shiraki
发明人： Yasuji Seko , Hiromi Otoma , Nobuaki Ueki , Hideki Fukunaga , Hideo Nakayama , Kiichi Ueyanagi , Yasuhiro Shiraki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/32325 , H01S5/34326 , H01S5/2009 , H01S5/3211 , H01S5/3406 , H01S5/3407
摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.
摘要翻译：在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有比有源层低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格与底物匹配。为此，可以选择第二包层的材料而不考虑其带隙的尺寸。这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。

13. 发明授权

US5425041A Multiquantum barrier laser having high electron and hole reflectivity of layers 失效
标题翻译：具有高层电子和空穴反射率的多电极势垒激光器
公开(公告)号：US5425041A
公开(公告)日：1995-06-13
申请号：US214235
申请日：1994-03-17
申请人： Yasuji Seko , Kiichi Ueyanagi , Yasuhiro Shiraki
发明人： Yasuji Seko , Kiichi Ueyanagi , Yasuhiro Shiraki
IPC分类号： H01S5/00 , H01S5/20 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/2013 , H01S5/34326
摘要： It is an object of the present invention to provide a highly efficient semiconductor laser unit having excellent temperature characteristics, in which electrons or holes are suppressed from overflowing from the active layer to the cladding layers while the threshold of current density is maintained low. The present invention is to provide a semiconductor laser unit fundamentally composed of an active layer and cladding layers in which the active layer is interposed between the cladding layers the semiconductor laser unit comprising: a multiquantum barrier layer including well layers and barrier layers disposed between the active layer and the cladding layers or disposed in the cladding layers close to the active layer, wherein the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to .GAMMA.-point in the reciprocal lattice space, and also the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points.
摘要翻译：本发明的目的是提供一种具有优异的温度特性的高效半导体激光器单元，其中电子或空穴被抑制从有源层溢出到包覆层，同时电流密度的阈值保持较低。本发明提供一种半导体激光器单元，其主要由有源层和包层组成，其中有源层介于包层之间，半导体激光单元包括：多量级阻挡层，包括阱层和位于活性层之间的势垒层层和包层，或者设置在靠近有源层的包覆层中，其中阱和势垒层相对于在互易格子空间中靠近GAMMA-point的位置处的电子和空穴具有高反射率，并且还阱和阻挡层相对于接近至少一个主要对称点的位置处的电子和空穴具有高反射率。

14. 发明申请

US20050173150A1 Multi-layer printed board 失效
标题翻译：多层印刷板
公开(公告)号：US20050173150A1
公开(公告)日：2005-08-11
申请号：US10663723
申请日：2003-09-17
申请人： Yasuhiro Shiraki
发明人： Yasuhiro Shiraki
IPC分类号： H05K3/46 , H05K1/02 , H05K1/03 , H05K1/11 , H05K3/42 , H05K7/06
CPC分类号： H05K1/0219 , H05K1/0237 , H05K1/116 , H05K3/429 , H05K2201/09381 , H05K2201/09618
摘要： A multi-layer printed board including signal layers, each signal layer including a signal line, a through-hole, and a ground through-hole. The signal layer includes a land connecting the through-hole and the signal line. An external periphery of the land has a first portion farthest from a center of the land, and a second portion extending a shorter distance from the center of the land than the first portion. A portion of the external periphery of the land opposite to the ground through-hole closest to the center of the land, is the second portion. Consequently, impedance matching can be improved even if a signal frequency is high.
摘要翻译：包括信号层的多层印刷电路板，每个信号层包括信号线，通孔和地面通孔。信号层包括连接通孔和信号线的平台。所述焊盘的外围具有距离所述焊盘的中心最远的第一部分和从所述焊盘的中心延伸的距离小于所述第一部分的第二部分。第二部分是与地面中心最接近的地面通孔相对的地面的外围部分。因此，即使信号频率高，也可以提高阻抗匹配。

15. 发明申请

US20140240948A1 POWER CONVERSION DEVICE 有权
标题翻译：电源转换器件
公开(公告)号：US20140240948A1
公开(公告)日：2014-08-28
申请号：US14348345
申请日：2011-09-30
申请人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
发明人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
IPC分类号： H05K9/00 , H05K7/20 , H02P27/04
CPC分类号： H05K9/0064 , H02M1/12 , H02M7/003 , H02M7/44 , H02M7/48 , H02M7/537 , H02P27/04 , H05K7/20409
摘要： A power conversion device includes an inverter that drives a motor; a fin that cools down the inverter; a first core including a through hole that allows passage of a positive side conductor that connects a power supply system and the inverter and a negative side conductor that grounds the inverter; a ground conductor that grounds the fin; a ground conductor that grounds a motor yoke via a capacitor; and a ground conductor including one end that is connected to the negative side conductor or the ground conductor and the other end that is grounded.
摘要翻译：电力转换装置包括：驱动电动机的逆变器; 冷却变频器的翅片; 第一铁芯，包括允许通过连接电源系统和逆变器的正侧导体的通孔和使逆变器接地的负侧导体; 接地导体，接地导体，通过电容器接地电机磁轭; 以及接地导体，其包括连接到负侧导体或接地导体的一端和接地的另一端。

16. 发明申请

US20060104000A1 Electronic control unit 有权
标题翻译：电子控制单元
公开(公告)号：US20060104000A1
公开(公告)日：2006-05-18
申请号：US11201382
申请日：2005-08-11
申请人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
发明人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
IPC分类号： H02H3/08 , H02H9/02
CPC分类号： H02H9/005 , H02H9/046
摘要： This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C1) and parasitic inductance (L1) of the first bypass capacitor are set in a range of 7×106
摘要翻译：本发明提供一种电子控制单元，其能够抑制具有在便携式无线装置中使用的频带的电磁噪声，并且能够表现出抗电磁噪声的抗噪声特性。电子控制单元包括恒压电源电路部分，模拟信号输入电路部分和转换处理电路部分，模拟传感器和驱动电源连接到外部，并且该单元连接到模拟传感器通过电源线和信号线，其中模拟信号输入电路部分包括限流电路部分，积分电路部分，限流电阻器，信号噪声吸收电路和第一旁路电容器以及电容（ C 1）和第一旁路电容器的寄生电感（L 1）设定在7×10 6 <1 / [2pi✓（L 1xC 1）] <35×10 6的范围内， / SUP>。

17. 发明授权

US5831296A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US5831296A
公开(公告)日：1998-11-03
申请号：US235155
申请日：1994-04-28
申请人： Takao Kuroda , Yasuhiro Shiraki
发明人： Takao Kuroda , Yasuhiro Shiraki
IPC分类号： H01L29/812 , H01L21/20 , H01L21/338 , H01L29/201 , H01L29/205 , H01L29/778 , H01L29/80
CPC分类号： H01L29/205 , H01L29/7783 , Y10S438/938
摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.
摘要翻译：公开了一种半导体器件，其包括未掺杂的GaAs层，中间未掺杂层和未掺杂的Ga1-xAlxAs层，其连续地设置在由半绝缘GaAs晶体制成的衬底上; 中间未掺杂层是未掺杂的In y Ga 1-y As层，未掺杂的GaAs1-zSbz层，包含未掺杂的In y Ga 1-y As层的超晶格层和未掺杂的GaAs1-zSbz层，包含未掺杂的In y Ga 1-y As层的超晶格层和未掺杂的GaAs层或包含未掺杂的GaAs1-zSb层和未掺杂的GaAs层的超晶格层。当施加到高电子迁移率晶体管时，该半导体器件提供高电流和高速度，并且其阈值电压具有小的色散。

18. 发明授权

US5047111A Method of forming a metal silicide film 失效
标题翻译：形成金属硅化物膜的方法
公开(公告)号：US5047111A
公开(公告)日：1991-09-10
申请号：US110580
申请日：1987-10-16
申请人： Akitoshi Ishizaka , Yasuhiro Shiraki , Takashi Ohshima
发明人： Akitoshi Ishizaka , Yasuhiro Shiraki , Takashi Ohshima
IPC分类号： C30B1/02 , H01L21/285
CPC分类号： H01L21/28518 , C30B1/023 , C30B29/10
摘要： Films of desired metal, e.g., Ni or Co, and of Si are laminated alternatelyn a single crystal silicon substrate to form a multi-layered structure, and thereafter the substrate is heated to grow an epitaxial NiSi.sub.2 or CoSi.sub.2 film in solid phase with less diffusion of Ni or Co atoms into the silicon substrate. Each layer in the multi-layered structure has a thickness selected in the range of 30-300 A with the overall composition ratio Si/Ni (or Si/Co) in the range of 1.8-2.0. The lamination process is done at a substrate temperature which does not cause the laminated films to react with the substrate and does not cause the multi-layered structure to become polycrystalline, e.g. below 350.degree. C. for the formation of an NiSi.sub.2 film or below 450.degree. C. for the formation of a CoSi.sub.2 film. The solid phase epitaxy is achieved at a substrate heating temperature in a range of 350.degree.-750.degree. C. for the formation of an epitaxial NiSi.sub.2 film or 450.degree.-1000.degree. C. for the formation of a CoSi.sub.2 film.
摘要翻译：将期望的金属（例如Ni或Co）和Si的膜交替层叠在单晶硅衬底上以形成多层结构，然后将衬底加热以生长外延NiSi 2或CoSi 2膜，固相少 Ni或Co原子扩散到硅衬底中。多层结构中的每个层具有在30-300A范围内选择的厚度，Si / Ni（或Si / Co）的总组成比在1.8-2.0的范围内。层压方法是在不使层压膜与基板反应而不会使多层结构变得多晶的基板温度下进行的。低于350℃以形成NiSi2膜或低于450℃以形成CoSi 2膜。在350〜-750℃的衬底加热温度下实现固相外延，用于形成外延NiSi2膜或450-1000℃以形成CoSi 2膜。

19. 发明授权

US09271432B2 Power conversion device with reduced noise source current, reduced high frequency current and reduced resonance current 有权
标题翻译：具有降低噪声源电流的功率转换器件，降低高频电流和降低谐振电流
公开(公告)号：US09271432B2
公开(公告)日：2016-02-23
申请号：US14348345
申请日：2011-09-30
申请人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
发明人： Ryo Yokozutsumi , Akihiro Murahashi , Takushi Jimichi , Satoshi Azuma , Yasuhiro Shiraki
IPC分类号： H02M7/00 , H05K9/00 , H02M7/48 , H02M1/12 , H02P27/04 , H05K7/20 , H02M7/537 , H02M7/44
CPC分类号： H05K9/0064 , H02M1/12 , H02M7/003 , H02M7/44 , H02M7/48 , H02M7/537 , H02P27/04 , H05K7/20409
摘要： A power conversion device includes an inverter that drives a motor; a fin that cools down the inverter; a first core including a through hole that allows passage of a positive side conductor that connects a power supply system and the inverter and a negative side conductor that grounds the inverter; a ground conductor that grounds the fin; a ground conductor that grounds a motor yoke via a capacitor; and a ground conductor including one end that is connected to the negative side conductor or the ground conductor and the other end that is grounded.
摘要翻译：电力转换装置包括：驱动电动机的逆变器; 冷却变频器的翅片; 第一铁芯，包括允许通过连接电源系统和逆变器的正侧导体的通孔和使逆变器接地的负侧导体; 接地导体，接地导体，通过电容器接地电机磁轭; 以及接地导体，其包括连接到负侧导体或接地导体的一端和接地的另一端。

20. 发明授权

US07187225B2 Electronic control unit 有权
标题翻译：电子控制单元
公开(公告)号：US07187225B2
公开(公告)日：2007-03-06
申请号：US11201382
申请日：2005-08-11
申请人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
发明人： Masaharu Yuhara , Yasuhiro Shiraki , Kazuhito Okishio , Hiroshi Nakamura , Hisato Umemaru , Yoshimitsu Takahata , Yasuaki Gotoh
IPC分类号： H03K5/08
CPC分类号： H02H9/005 , H02H9/046
摘要： This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C1) and parasitic inductance (L1) of the first bypass capacitor are set in a range of 7×106
摘要翻译：本发明提供一种电子控制单元，其能够抑制具有在便携式无线装置中使用的频带的电磁噪声，并且能够表现出抗电磁噪声的抗噪声特性。电子控制单元包括恒压电源电路部分，模拟信号输入电路部分和转换处理电路部分，模拟传感器和驱动电源连接到外部，并且该单元连接到模拟传感器通过电源线和信号线，其中模拟信号输入电路部分包括限流电路部分，积分电路部分，限流电阻器，信号噪声吸收电路和第一旁路电容器以及电容（ C 1）和第一旁路电容器的寄生电感（L 1）设定在7×10 6 <1 / [2pi√（L 1x C 1）] <35×10 6的范围内， / SUP>。

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